A power device with a surface charge region structure

Abstract

The invention provides a power device with a surface charge region structure, comprising a P substrate I (1), a floating equipotential layer (4), a P substrate II (2) and a drift region (5) arranged in sequence from bottom to top ); the drift region (5) is provided with an N+ drain region, a drain electrode (10), a gate electrode (12), a source electrode (11), an N+ contact region, a P well (7) and a P+ source region; the A series of N+ charge regions (6) distributed laterally and equidistantly on the top of the drift region (5) and located in the drift region form a surface charge region. The present invention sets a series of equidistant N on the surface of the drift region + The surface charge region structure of the charge region, the surface charge region generates interface charges, which enhances the electric field in the charge region and improves the lateral withstand voltage of the device; the interface charge simultaneously enhances the vertical electric field and vertical withstand voltage of the buried layer, reduces the electric field near the drain, and prevents the device from The surface breaks down prematurely; due to the use of the surface charge region structure with equal spacing N+, the process is simple and feasible, the process tolerance is good, and it is compatible with the conventional CMOS process.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a power device with a surface charge region structure. Background technique [0002] Power semiconductor devices are semiconductor devices that perform power processing and are the main object of power electronics research. Power electronics was born under the impetus of the development of power semiconductor devices, and has gradually matured after decades of development. Power semiconductor devices have a wide range of applications such as weaponry, power electronics, aerospace, flat panel display drivers and other high-tech industries. However, lateral power devices have lateral channels, and the drain, source, and gate are all on the chip surface, and are easy to integrate with low-voltage signals through internal connections, and are widely used in power integrated circuits. Therefore, experts and scholars at home and abroad have invested great attentio...

AI Technical Summary

Problems solved by technology

The traditional means of improving the withstand voltage are often complicated in process and high in cost and price. The surface charge region structure is adopted, the process is simple and feasible, the process tolerance is good, and it is compatible with the conventional CMOS process

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