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170results about How to "Improve lateral pressure resistance" patented technology

Skeleton type photoelectric composite cable and manufacturing method thereof

The invention relates to a skeleton type photoelectric composite cable and a manufacturing method thereof. The skeleton type photoelectric composite cable comprises a skeleton and an outer sheath wrapping the skeleton. The skeleton type photoelectric composite cable is characterized in that two sides of the skeleton are respectively provided with a skeleton groove whose radial section is a circle or a large semicircle, optical communication units are arranged in the skeleton grooves in a laying manner, and power supply conducting wires are arranged at the upper side and the lower side of the skeleton. According to the cable, optical units and electric units are integrated so that wiring space resources are greatly saved, the construction cost is reduced, the structural setting is reasonable, the size is small, the optical cable is flexible and light, the optical communication units in the optical cable are easily separated and continued, the mechanical performance, the weather resistance, and the flexibility performance are excellent, and the optical cable can be applied to indoor and outdoor applications. The manufacturing method is simple and reasonable, the quality and the process are easily controlled, the production efficiency is high, and the manufacturing cost is low.
Owner:YANGTZE OPTICAL FIBRE & CABLE CO LTD

Intelligent photoelectric hybrid detecting optical cable and production method thereof

The invention discloses an intelligent photoelectric hybrid detecting optical cable and a production method thereof, which relate to a novel intelligent detecting optical cable used in the fields of oil fields, coal mines, aviation, fire fighting and the like and a production method thereof. The intelligent photoelectric hybrid detecting optical cable comprises a miniature tightly-enveloped optical fiber unit, a net-like copper conductor conducting unit, a high temperature-resisting fluoroplastic insulating layer and a high-strength stainless steel wire armoring unit, wherein the net-like copper conductor unit is enveloped outside the miniature tightly-enveloped optical fiber unit; the high temperature-resisting fluoroplastic insulating layer is arranged outside the net-like copper conductor conducting unit to serve as a protective sleeve; the high-strength stainless steel wire armoring unit is arranged outside the high temperature-resisting fluoroplastic insulating layer; the miniature tightly-enveloped optical fiber unit consists of a high temperature optical fiber, a miniature stainless steel pipe and high temperature fiber paste; the optical fiber unit has a tightly-enveloped structure; the high temperature optical fiber is sleeved in the miniature stainless steel pipe; the high temperature fiber paste is filled around the high temperature optical fiber in the miniature stainless steel pipe; and the net-like copper conductor unit is formed by weaving a plurality of copper wires.
Owner:ZHONGTIAN ELECTRIC POWER OPTICAL CABLES CO LTD

Buoyancy controllable optoelectrical composite cable

InactiveCN101866720AReasonable and flexible control of buoyancyGuaranteed tensile strength requirementsCommunication cablesFloating cablesCoaxial cableUnderwater
The invention relates to a buoyancy controllable optoelectrical composite cable comprising a cable core and a sheath, wherein the sheath is sleeved outside the cable core, the cable core comprises a reinforcing core, more than one optic bundle tube and a power lead, wherein the optic bundle tubes are twisted around the reinforcing core and comprise a loose tube, optical fibers arranged in the loose tube and filling fiber paste. The buoyancy controllable optoelectrical composite cable is characterized in that more than one buoyancy control unit twisting layer is additionally arranged in the sheath, a buoyancy control unit is a physical foamed plastic filling rope or a hollow plastic tube, the reinforcing core is formed by covering a plastic cushion layer by aramid fiber, the sheath mainly comprises a first water-blocking taping layer, two buoyancy control unit twisting layers, a second water-blocking taping layer, an aramid fiber reinforcing layer and an outer polyurethane sheath which are coated on the cable core sequentially, and a copper core signal wire and/or a coaxial cable signal wire are/is arranged in the cable core. The invention has the advantages of reasonably and flexibly controlling the buoyancy of an optoelectrical composite cable, satisfying special application requirements of operation positioned on a water surface or underwater and obviously improving the tension intensity.
Owner:天津立孚光电科技股份有限公司

Semiconductor device with super junction structure

InactiveCN103779399AManufacturing process will not increaseImprove reliabilitySemiconductor devicesGate oxideDielectric layer
The invention provides a semiconductor device with a super junction structure. The semiconductor device comprises an N-type doped semiconductor substrate and an N-type doped epitaxial layer, wherein the N-type doped semiconductor substrate and the N-type doped epitaxial layer are sequentially arranged from bottom to top, and a first P-type filling well region, a second P-type filling well region and a third P-type filling well region are arranged inside the N-type doped epitaxial layer. A first P-type doping region is arranged on the upper side of the first P-type filling well region and provided with an N-type doping region, and a second P-type doping region is arranged on the upper side of the second P-type filling well region. A terminal pressure-withstanding structure T is arranged on the periphery of a primitive cell source electrode region C, wherein the terminal pressure-withstanding structure T comprises the second P-type filling well region, the second P-type doping region, the third P-type filling well region and the corresponding part of the N-type doped epitaxial layer, and the primitive cell source electrode region C comprises the first P-type filling well region, the first P-type doping region, the N-type doping region and the corresponding part of the N-type doped epitaxial layer. The parts, corresponding to polycrystalline silicon arranged in a part of dielectric layer above a gate oxide layer, of the terminal pressure-withstanding structure T and the primitive cell source electrode region C form a gate electrode structure and a polycrystalline silicon field plate structure respectively.
Owner:XIAN SEMIPOWER ELECTRONICS TECH

Array digital analogy integrated signal cable for offshore oil platform underwater pre-warning system

The invention provides an array digital analogy integrated signal cable for an offshore oil platform underwater pre-warning system, and relates to the technical field of offshore oil platforms or underwater security and protection facility array signal cables. The array digital analogy integrated signal cable is an integrated cable with strong current analog and digital signals and weak current analog and digital signals in a mixed mode. The array digital analogy integrated signal cable comprises a center reinforcing unit, a seven-core cable unit, a five-core cable unit, a main woven shielding layer, a coaxial-cable unit, an inner protection layer, an armor layer and an outer protection layer. The center reinforcing unit or the coaxial-cable unit is internally provided with optical fibers for transmitting optical signals. The seven-core cable unit is arranged outside the center reinforcing unit, the five-core cable unit and the coaxial-cable unit are arranged outside the seven-core cable unit, the main woven shielding layer is arranged outside the five-core cable unit and the coaxial-cable unit, the inner protection layer is arranged outside the main woven shielding layer, the armor layer is arranged outside the inner protection layer, and the outer protection layer is arranged outside the armor layer.
Owner:ZHONGTIAN TECH SUBMARINE CABLE CO LTD

Groove MOSFET with terminal voltage-withstanding structure and manufacturing method of groove MOSFET

The invention brings forward a groove MOSFET with a terminal voltage-withstanding structure and a manufacturing method of the groove MOSFET. Grooves are formed in a cellular area and a terminal area of the groove MOSFET respectively. The grooves of the terminal area are at least two enclosed annular grooves which surround the cellular area. At least one annular groove, which is close to the cellular area, is an isolation ring which is connected with a zero potential. At least one annular groove, which is close to a scribing channel, is a cutoff ring which is connected with the scribing channel. According to the groove MOSFET with the terminal voltage-withstanding structure, the isolation ring is connected with the zero potential so that electric leakage can be effectively inhibited; and the cutoff ring is connected with the scribing channel so that carriers are not accumulated along the cutoff ring, and thus isolation effect and voltage-withstanding effect of the terminal voltage-withstanding structure are enhanced. According to the manufacturing method, voltage-withstanding and electric leakage problems of the groove MOSFET prepared by the three-layer photo-etching technology are solved, transverse electric leakage of the groove MOSFET is reduced, voltage withstanding of devices is enhanced, technology process is simplified and manufacturing cost is lowered without increasing technology complexity.
Owner:BYD SEMICON CO LTD

Longitudinal super junction metal oxide field effect transistor

ActiveCN103700697ATo achieve uniform distributionLarge PN junction contact area ratioSemiconductor devicesTerminal voltageField-effect transistor
The invention discloses a longitudinal super junction metal oxide field effect transistor, which comprises an N type doped semiconductor substrate and an N type doped epitaxial layer formed in sequence from bottom to top, wherein a first P type filling trap area and second P type filling trap areas with the same structures are formed inside the N type doped epitaxial layer from inside to outside; the upper side of the first P type filling trap area is provided with a first P type doped area; a second P type doped area and a P type doped unipotential ring are arranged on the upper side of each second P type filling trap area from inside to outside, and a terminal voltage-resistant structural area T is formed by the three parts; the second P type doped areas are arranged corresponding to the second P type filling trap areas; the P type doped unipotential rings are larger than the second P type filling trap areas in widths, and are correspondingly arranged in parallel over the second P type filling trap areas respectively along the length direction of the transistor; an N type doped area is arranged in each P type doped area, and constructs a primitive cell source electrode area C with the first P type filling trap area. By adopting the transistor, the surface potential distribution is optimized.
Owner:XIAN SEMIPOWER ELECTRONICS TECH

Pressure-sensitive optical cable with armor layer

The invention discloses a pressure-sensitive optical cable with armor layer, which takes a signal optical fiber and fiber yarns spirally wound on the signal optical fiber and which is peripherally provided with an armor layer and an outer protective layer in sequence. As pressure is applied to the pressure-sensitive optical cable, the fiber yarns spirally wound on the signal optical fiber lead the signal optical fiber to bending deformation in order to change the bending loss of the signal optical fiber. As a result, pressure signals are converted into optical signals which are then transmitted via the signal optical fiber to achieve the purpose of remote measurement. The armor layer made of fine fiber material has the characteristics of excellent bending flexibility, facilitating manufacture, storage, transportation and use of the pressure-sensitive optical cable, similarity to common optical cables, being capable of remarkably reducing manufacturing and use costs, and having no impact on pressure detection. The pressure-sensitive optical cable has simple structure, reasonable design, convenient processing and manufacturing, diversified using ways, high sensitivity and good using effect, and distributive pressure measurement can be realized by means of optical time domain reflectometer or other measurement instruments.
Owner:XIAN JINHE OPTICAL TECH

Composite jumper cable for offshore oil platform

The invention discloses a composite jumper cable for an offshore oil platform, and relates to the technical field of cable connection between offshore oil platforms, between an offshore oil platform and an oil tanker, between oil tankers, and between an offshore fixed facility and a movable facility, and transmission of power energy resources, control signals, communication signals, oil, gas, water and the like. The composite jumper cable comprises three power transmission split-phase protecting bush insulating cable core units, an optical fiber communication unit, pipeline units, a control cable unit, a filling unit, a buffering and isolating protection unit, high-tensile steel wire reinforcing units and an outer protection layer unit. The three same power transmission split-phase protecting bush insulating cable core units are twisted, the pipeline units are embedded into three large gaps respectively, the optical fiber communication unit and the control cable unit are embedded into parts among the pipeline units respectively, the solid filling unit is arranged in an integral cabling unit, the buffering and isolating protection unit wraps the cabling unit, two layers of the high-tensile steel wire reinforcing units wrap the buffering and isolating protection unit, and the outer protection layer unit wraps the high-tensile steel wire reinforcing units in a squeezing mode.
Owner:ZHONGTIAN TECH SUBMARINE CABLE CO LTD

Silicon on insulator (SOI) pressure resistant structure with interface lateral variation doping

The invention discloses a silicon on insulator (SOI) pressure resistant structure with interface lateral variation doping, and relates to a semiconductor power device comprising a substrate layer, a medium buried layer, an active semiconductor layer and an interface lateral variation doping layer, wherein, the medium buried layer is arranged between the substrate layer and the active semiconductor layer; and the interface lateral variation doping layer is arranged between the medium buried layer and the active semiconductor layer, in the invention, by adopting the condition that the interface lateral variation doping layer is arranged in the active semiconductor layer on the interface of the medium buried layer, when the structure is used in the semiconductor device, and the dosage concentration of the silicon at the top of the lateral variation doping layer terminal interface is higher, thus effectively improving the longitudinal pressure resistance and the lateral pressure resistance of the device, thus the structure can effectively improve the pressure resistance of the whole device, and remit the problem that a 'hot spot' area is generated because the dosage concentration of a source end of a lateral variation doping structure of the whole active semiconductor layer is too low, which can be realized in a thick active semiconductor layer.
Owner:CHONGQING UNIV

Production technology of air-blowing optical fiber cable double-layer co-extrusion casing pipe

The invention discloses a production technology of an air-blowing optical fiber cable double-layer co-extrusion casing pipe. The technology comprises the following steps that (1), PBT is dried at a temperature ranging from 80 DEG C to 90 DEG C, and PC is dried at a temperature ranging from 90 DEG C to 100 DEG C; (2), the dried PC and the dried PBT in the step (1) are put into a first extruder and a second extruder respectively to be molten and plastified, the first extruder extrudes the PC, the temperature of the PC ranges from 268 DEG C to 280 DEG C, the second extruder extrudes PBT, and the temperature of the PBT ranges from 250 DEG C to 265 DEG C; (3), the molten and plastified PC and PBT in the step (2) are jointed in a machine head bush die and then are compositely molded, and meanwhile, an optical fiber which penetrates into a machine head and is filled with ointment is wrapped; (4), the casing pipe with the optical fiber which is molded in the step (3) and wrapped and filled with the ointment is cooled in circulating water at a temperature ranging from 20 DEG C to 40 DEG C, and 4N force is used for carrying out traction while cooling is carried out; and (5), the casing pipe in the step (4) is reeled with the speed ranging from 150 to 220m / min.
Owner:JIANGSU HENGTONG PHOTOELECTRIC

Profile steel truss double-skin wall structure and construction method thereof

The invention discloses a profile steel truss double-skin wall structure and a construction method thereof. The profile steel truss double-skin wall structure comprises a main body structure, a double-skin wall structure unit and a cast-in-place concrete layer, the double-skin wall structure unit is transversely connected in a spliced manner; the cast-in-place concrete layer is cast in the double-skin wall structure unit; the double-skin wall structure unit comprises a first precast concrete slab and a second precast concrete slab; a group of profile steel trusses are transversely arranged between the first precast concrete slab and the second precast concrete slab at an interval in parallel; each profile steel truss is arranged vertically in the length direction, a chord member on one side of each profile steel truss is cast in the first precast concrete slab, the chord member on the other side of each profile steel truss is cast in the second precast concrete slab. Scaffold and formwork support procedures in traditional cast-in-situ technology are simplified, labor force is saved, potential safety risks caused by high-formwork support are avoided, and the technical problems thatexisting steel bar truss double-skin walls have small thickness and height not exceeding 4 m and existing double-skin wall structures have low overall rigidity and concrete lateral pressure resistanceare solved.
Owner:CHINA CONSTR FIRST DIV GROUP CONSTR & DEV
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