High-voltage LDMOS (laterally-diffused metal oxide semiconductor) device

A high-voltage, device technology, applied in the field of high-voltage LDMOS devices, can solve the problems of not being able to simultaneously meet the forward requirements of high withstand voltage and low on-resistance, and the long time of pushing well in the N-type drift region.

Active Publication Date: 2015-04-15
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] Since the existing technology cannot meet the forward requirements of high withstand voltage and low on-resistance at the same time, and because the N-type drift region takes a long tim

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  • High-voltage LDMOS (laterally-diffused metal oxide semiconductor) device

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[0018] The present invention will be described in detail below in conjunction with the implementations shown in the drawings, but it should be noted that these implementations are not limitations of the present invention, and those of ordinary skill in the art based on the functions, methods, or structural changes made by these implementations Equivalent transformations or substitutions all fall within the protection scope of the present invention.

[0019] figure 1 is a schematic diagram of a high-voltage LDMOS device 100 in the first embodiment of the present invention, which includes a P-type substrate 10, a withstand voltage layer 20 located above the P-type substrate, a P-type channel region 30 located above the withstand voltage layer 20, and a N type drift region 40 and a P-type drop field layer 50 above the N-type drift region.

[0020] The P-type substrate 10 is used as the base of the high-voltage LDMOS device 100, and the P-type substrate is arranged below the volt...

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Abstract

A high-voltage lateral double-diffused metal oxide semiconductor (LDMOS) device comprises a P-type channel region, an N-type drift region, a voltage-resistance layer, and a P-type substrate located at the bottom, the voltage-resistance layer being provided between the P-type substrate and the N-type drift region. For the high-voltage LDMOS device, the trapping time in the process is shortened by adding a voltage-resistance layer, thereby increasing a sectional area of a current channel, improving the on resistance, and further enhancing lateral voltage resistance by enhancing longitudinal voltage resistance.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a high-voltage LDMOS device. Background technique [0002] Due to the advantages of high voltage, low power consumption and high integration of BCD (bipolar-CMOS-DMOS) technology, there are more and more integrated circuits such as HVIC (high voltage integrated circuit) and SPIC (smart power integrated circuit) made of BCD technology. It is widely used in IPM (Intelligent Power Module) frequency conversion modules for motor drives, high-power LED lighting and white goods. The core device of BCD technology, UHV-NLDMOS (ultra-high voltage-N-type lateral double-diffused metal oxide semiconductor), has the highest development difficulty due to its high withstand voltage and low on-resistance, and major companies are competing to launch their own unique device structures. In order to obtain low on-resistance, a deep junction and high-concentration N-type (electronic type) drift reg...

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Application Information

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IPC IPC(8): H01L29/78H01L29/10
CPCH01L29/7816H01L29/0623H01L29/063H01L29/0878H01L29/1095H01L29/42368
Inventor 祁树坤
Owner CSMC TECH FAB2 CO LTD
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