164results about How to "Enhanced electric field" patented technology

The present invention discloses one kind of powder material capable of generating negative ion and its preparation process. The powder material consists of tourmaline material 20-70 wt%, mixed RE material or mixed RE oxide material 20-60 wt%, semiconductor catalyst material 5-20 wt%, and auxiliary exciting material 4-15 wt%. Its preparation process includes the following steps: 1. crushing and roasting tourmaline material; 2. grinding tourmaline material in a grinding set into superfine powder; 3. adding surface treating agent for surface treatment; 4. grinding the other materials to size smaller than 1 micron; and 5. dispersing all the materials inside one high speed dispersing machine, sieving and drying. The powder material has a negative ion releasing rate up to 6000-10000 / cu cm.

The present invention belongs to the field of low temperature plasma applying technology and is especially a high-grade discharging and low temperature plasma oxidizing water processing method. One in-situ bipolar pulse discharge low temperature plasma water voltage power supply, covering of the discharge electrodes with medium, filling of the gap between the electrodes by air-liquid mixture of fine bubbles and processed water. The present invention has strengthened electric field between the electrodes, protected high-voltage electrodes and long service life, and may be used in sterilizing water, decoloring waste water and catalytically degrading matters hard to degrade biologically and lasting organic pollutant.

The invention discloses an aluminum gallium nitrogen-based solar blind ultraviolet detector and a production method thereof. The aluminum gallium nitrogen-based solar blind ultraviolet detector comprises a sapphire substrate, an A1N nucleating layer, an A1<x1>Ga<1-x1>N buffer layer, an n-type A1<x2>Ga<1-x2>N layer, an undoped i-type A1<x3>Ga<1-x3>N absorbing layer, an n-type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, an undoped i-type A1<x6>Ga<1-x6>N multiplication layer, a p-type A1<x7>Ga<1-x7>N layer and a p-type GaN layer which are sequentially arranged from the bottom up. An n-type ohmic electrode leads from the n type A1<x2>Ga<1-x2>N layer, and a p type ohmic electrode leads from the p type GaN layer. According to the arrangement, the absorbing layer and the multiplication layer are separated by the multi-cycle n type A1<X4>In<y1>Ga<1-x4-y1>N / A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, the electric field of the multiplication layer is increased, thus allowing uniform avalanche multiplication to occur under the high electric field, and avalanche multiplication factors of the solar blind ultraviolet detector are increased.

An AFM based technique has been demonstrated for performing highly localized IR spectroscopy on a sample surface by using the AFM probe to detect wavelength dependent IR radiation interaction, typically absorption with the sample in the region of the tip. The tip may be configured to produce electric field enhancement when illuminated by a radiation source. This enhancement allows for significantly reduced illumination power levels resulting in improved spatial resolution by confining the sample-radiation interaction to the region of field enhancement which is highly localized to the tip.

A sensor chip includes a sensor-portion having at least a metal-layer deposited on a surface of a dielectric-plate. A fluorescent-label binding-substance in an amount corresponding to the amount of a detection target substance in a sample binds to the sensor-portion when the sample is placed in contact with the sensor-portion. The sensor-portion is irradiated with excitation-light to generate an enhanced electric-field on the sensor-portion. The amount of the detection target substance is detected based on the amount of light generated by excitation of a fluorescent-label in the fluorescent-label binding-substance in the enhanced electric-field. A magnetic-particle is added to the fluorescent-label binding-substance, and the amount of the detection target substance is detected while the fluorescent-label binding-substance modified with the magnetic-particle is attracted to the vicinity of the sensor-portion by a magnetic-field application means arranged on an opposite-surface side of the dielectric-plate, opposite to the metal-layer-deposited surface thereof.

The embodiment of the invention provides a pixel electrode and a liquid crystal display panel. The pixel electrode provided by the embodiment of the invention comprises a strip horizontal trunk and a strip vertical trunk which are perpendicularly intersected, wherein the intersection point of the horizontal trunk and the vertical trunk is the coincidence of the central point of the horizontal trunk and the central point of the vertical trunk; the horizontal trunk and the vertical trunk are perpendicularly intersected to be divided into four pixel regions, and each pixel region is provided with multiple strip branches which are horizontally laid; the multiple strip branches in each pixel region are expanded outwards at the same included angle corresponding to the horizontal trunk; an interval is formed between each two of the multiple strip branches; and the width of the far-end part of the strip branches is larger than the width of the main part of the strip branches. In the invention, the width of the far-end part of the strip branches of the pixel electrode provided by the embodiment of the invention is set to be the width of the strip branches, thereby reducing the area of the edge blind region of the pixel electrode and enabling the area of the non-aperture region to be decreased; the aperture ratio of the liquid crystal display panel provided by the embodiment of the invention can be improved; and the pixel electrode has the effect of inhibiting the occurrence ratio of discontinuous lines.

In the present invention, a specimen is made to flow on a metal film on a prism, and excitation light (α) is emitted in a predetermined direction. By changing the position of a reflective member that reflects the excitation light (α), and adjusting the orientation of a reflective surface of the reflective member, the incident angle (θ) is changed while maintaining a state in which the excitation light (α) that enters the prism is reflected at a specific position on the metal film. The intensity of light to be generated on the metal film is measured, and the reflective member is positioned to match the position of the reflective member and the orientation of the reflective surface when a maximum amount of light is measured.

A detection apparatus includes: a first light source group having a plurality of light sources; a switch that switches the plurality of light sources to activate at least one of the light sources, a first optical system that introduces light from the activated light source into an electrical conductor of an optical device; and a detector that detects Raman scattering light from the light scattered or reflected by the electrical conductor. Each of the plurality of light sources of the first light source group is capable of radiating light having different polarization directions.

In a flash memory device, which can maintain an enhanced electric field between a control gate and a storage node (floating gate) and has a reduced cell size, and a method of manufacturing the flash memory device, the flash memory device includes a semiconductor substrate having a pair of drain regions and a source region formed between the pair of drain regions, a pair of spacer-shaped control gates each formed on the semiconductor substrate between the source region and each of the drain regions, and a storage node formed in a region between the control gate and the semiconductor substrate. A bottom surface of each of the control gates includes a first region that overlaps with the semiconductor substrate and a second region that overlaps with the storage node. The pair of spacer-shaped control gates are substantially symmetrical with each other about the source region.

The invention discloses an integrated polarization converter based on a silicon-based L-shaped waveguide structure. The integrated polarization converter comprises an input waveguide used for inputting optical signals, an output waveguide used for outputting optical signals, a silicon-based L-shaped waveguide used for polarization rotation and a wrapping layer. The input waveguide and the output waveguide are respectively in direct end face coupling with the silicon-based L-shaped waveguide, a transverse slot is formed in a longitudinal arm of the silicon-based L-shaped waveguide, a longitudinal slot is formed in a transverse arm of the silicon-based L-shaped waveguide, and the wrapping layer wasps the outer side of the input waveguide, the outer side of the output waveguide and the outer side of the silicon-based L-shaped waveguide. The integrated polarization converter has the advantages of being easy to implement, high in converting efficiency, compact in structure, little in loss, large in fabrication tolerance and the like.

The present invention relates to polysilicon emitter solar cells, and more particularly to polysilicon emitter solar cells with hyperabrupt junctions, and methods for making such solar cells. According to one aspect, a polysilicon emitter solar cell according to the invention includes a nitrided tunnel insulator. The nitridation prevents boron diffusion, enabling a hyperabrupt junction for a p-poly on n-Si device. According to another aspect, a nitrided oxide (DPN) is used in a tunnel oxide layer of a MIS solar cell structure. The DPN layer minimizes plasma damage, resulting in improved interface properties. An overlying polysilicon emitter can then provide a low sheet resistance emitter without heavy doping effects in the substrate, excess recombination, or absorption, and is a significant improvement over a conventional diffused emitter or TCO. According to another aspect, the invention includes a method for making a solar cell structure that is functionally equivalent to a selective emitter, but without the requirement for multiple diffusions, long diffusions, aligned lithography, or fine contact holes.

The invention discloses an array substrate, a drive method thereof, a liquid crystal display panel and a display device. The array substrate comprises a substrate, pixel electrodes, compensation capacitors, control lines and a control circuit. The pixel electrodes are in a floating state after being charged, and the control circuit applies voltage with polarity identical to that of voltage on the pixel electrodes to the compensation capacitors. According to the capacitance and charge conservation principle, the voltage difference at two ends of each compensation capacitor is to keep the state when the pixel electrodes are charged, so that the voltage at the other end of the compensation capacitor changes identically when the control circuit applies voltage to one end of the compensation capacitor, and the voltage amplitude of the pixel electrodes is increased. When the array substrate is applied to the liquid crystal display panel, the voltage amplitude of the pixel electrodes is increased, the electric field controlling liquid crystal molecules to turn over is enhanced, and accordingly, response time of the liquid crystal molecules is shortened. The array substrate provided by the embodiment solves the problem of reduced liquid crystal response speed at a low temperature in the prior art, and the liquid crystal display quality is improved.

The invention discloses a novel gallium-oxide(Ga2O3)-based-PIN structure-included ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is composed of a substrate (101), a buffer layer (102), an n type Ga2O3 layer (103), and an non-doped i type NiO / TiO2 superlattice absorber layer (104), a p type Ga2O3 layer (105), an n type ohmic electrode (107) led out at the n type Ga2O3 layer (103), and a p type ohmic electrode (106) led out at the p type Ga2O3 layer (105) that are arranged successively from bottom to top. According to the invention, with the multi-period non-doped i type NiO / TiO2 superlattice as the absorption layer, a problem that the ultraviolet detector is insensitive because of the similar ionization coefficients of the electron and hole in the ultraviolet photoelectric detector is solved; and the responsivity and stability of the detector to the UV signal are improved. The ultraviolet photoelectric detector having advantages of novel structure and high sensitivity is suitable for deep ultraviolet detection.

The invention provides a device for hydrophobicity detection and aging evaluation of a composite insulator based on ultraviolet optical characteristics of liquid drop discharge. On the premise of guaranteeing safe operation of electric transmission and transformation equipment, the ultraviolet optical characteristics of discharge of liquid drops on the surface of the composite insulator are obtained effectively and used for reflecting the existing state and distribution of the liquid drops on the surface of the composite insulator and the aging conditions of the composite insulator, and corresponding aging evaluation criteria are provided. By means of the device, hydrophobicity reducing factors causing external insulation flashover accidents can be subjected to early detection and diagnosis, the resolution and accuracy of surface hydrophobicity detection of the composite insulator are improved, and continuity and reliability of power supply and distribution of an electric power system are effectively guaranteed.

A silicon on insulator (SOI) transverse high voltage power device with ultralow specific on resistance belongs to the technical field of power semiconductor devices and comprises a vertical super junction cellular structure and a terminal structure. The terminal structure is located on the outside or the periphery of an integral cellular structure. The device is manufactured on an SOI layer of an SOI material. The vertical super junction cellular structure improves breakdown voltage, reduces specific on resistance simultaneously and reduces domain area. The device is integrated by a single cellular or a plurality of cellulars, the plurality of cellulars connected in parallel can share one terminal, and a drain leading out structure is utilized to lead out a drain transversely to enable the drain, a grid and a source to be located on the surface. The device can be easily integrated with a common circuit, greatly reduces domain area and further reduces process cost. In addition, the device is capable of increasing a device vertical electric field by adopting a thin oxygen burying layer and simultaneously can effectively relieve self-heating effect.

The invention discloses a III-group nitride semiconductor avalanche photoelectric detector with an absorption layer and multiplication layer separated structure. The detector includes a substrate andepitaxial layers grown on the substrate, wherein the epitaxial layers include a AlN buffer layer, an unintentionally doped AlwGa1-wN transition layer, an unintentionally doped AlkGa1-kN composition graded layer, a heavily doped n type AlxGa1-xN ohmic contact layer, an unintentionally doped AlyGa1-yN absorption layer, a charge layer, an unintentionally doped AlyGa1-yN multiplication layer and a p type doped AlyGa1-yN layer which are grown sequentially from bottom to top, wherein the charge layer comprises at least three n type AlzGa1-zN layers, and the doping concentration of the charge layer is in high-low-high saddle type doping distribution. The III-group nitride semiconductor avalanche photoelectric detector has the advantages of improved performance, low noise, low working voltage, high gain and high quantum efficiency.

The invention belongs to the technical field of SPR sensors, and particularly relates to a SPR sensor made with a graphene / gold / D-type plastic optical fiber and a preparation method. The method comprises the following steps of: (1) forming a groove shaped sensing area in the fiber, and preparing a D-type fiber; (2) growing the graphene on a copper foil by using a chemical vapor deposition method,and directly evaporating a gold film onto the graphene through a thermal evaporation method, to obtain a gold / graphene / copper foil composite layer; (3) corroding the copper foil in the gold / graphene / copper foil composite layer, and moving the obtained graphene / gold film to a D-type optical fiber, to obtain the sensor. According to the preparation method, the gold is directly evaporated onto the graphene through the thermal evaporation method, so that the graphene and the gold film are perfectly laminated; and then the graphene / gold etched off the copper foil is moved to the D-type plastic optical fiber, so that the structure of the gold plus graphene is realized on the plastic optical fiber. The prepared SPR sensor made with the graphene / gold / D-type plastic optical fiber has the characteristic of a high recognition sensitivity of complementary and non-complementary DNA strands.

The invention discloses a CdS / ZnO composite piezoelectric photocatalyst and a preparation method and application thereof. The method comprises the steps that firstly, a ZnO nanorod is synthesized through a solvothermal method, and then a chemical bath is carried out to synthesize the CdS / ZnO composite piezoelectric photocatalyst by taking the ZnO nanorod as a precursor through the action of electrostatic adsorption. The catalyst is a piezoelectric photocatalyst formed by compounding CdS and ZnO which have piezoelectric properties, the catalyst utilizes a piezoelectric electric field to promotethe separation of photo-generated carriers for enhancing the photocatalytic activity, the interior and space separation of the photo-generated carriers is also achieved, thereby reducing the recombination of the photo-generated carriers and increasing the utilization rate of the solar energy, and the piezoelectric photocatalytic rate reaches 5.477 min<-1>, which is four times of the photocatalytic efficiency of CdS alone. The CdS / ZnO composite piezoelectric photocatalyst and the preparation method and application thereof have the advantages that the raw materials are easy to obtain, the preparation method is simple, the operation is convenient, the stability of the composite material is better, and a feasible strategy is provided for improving the photocatalytic performance.

Improved optical interferometric modulators have a small waveguide spacing so that the waveguide pair are close to the central electrode, to enhance electro-optic interaction. Asymmetric waveguides with differential indices are used to effectively de-couple the waveguide pair. Multiple sections of asymmetric waveguide pairs with alternating differential indices are used to achieve chirp-free operation. Another version of the device utilizes transmission-line electrode that weave closer to one of the waveguide pair alternately between sections. Another version of the device utilizes waveguide structure that one of the waveguide is closer to the central electrode in alternate section. To improve efficiency further, a DC bias is provided on the outer electrodes configured as an RF-ground but DC-float electrodes. Another improvement is to have a slot is cut underneath the waveguide region to effectively reduce to thickness of the substrate. These improvements lead to higher modulator efficiency.

The invention provides plasma processing equipment, and the equipment comprises a reaction cavity, a substrate for carrying a machined workpiece, and a radio frequency antenna device. The radio frequency antenna device comprises an inductive coil, an electrode plate group, and a radio frequency source. The inductive coil and the electrode plate group are in parallel connection, and are electrically connected with the radio frequency source. Moreover, the inductive coil and the electrode plate group are disposed at the top of the reaction cavity, and are respectively corresponding to different positions of the substrate. The equipment employs the electrode plate group to generate plasma at the same time on the basis of employing the inductive coil to generate plasma, and can achieve the adjustment of the distribution density of plasma at different positions, so as to enable the etching results of various types of machined workpieces on the substrate to be uniform, thereby improving the etching uniformity.

The invention discloses a packaging cover plate of a sensitivity-strengthened electric field sensor and a packaging method and relates to the technical field of electric field detection. The packaging cover plate comprises an inner core, a cover plate edge and an isolation ring, wherein the inner core is located in the middle of the cover plate and above the sensitive face of the packaged electric field sensor, and the sensitivity of the electric field sensor is effectively strengthened. The cover plate edge is used for connecting a packaging pipe housing. The isolation ring is located between the cover plate edge and the inner core to play supporting and isolation effects. In addition, the packaging convenience is further increased by adopting the structure. Correspondingly, the structure is successively prepared by adopting the packaging method of the corresponding electric field sensor.

A substrate for mass spectrometry includes a first reflective member that is semi-transmissive / semi-reflective, a transparent member, and a second reflective member that is reflective, sequentially provided to form an optical resonator. The optical resonator includes, on a surface of the first reflective member, a sample separation portion at which surface interaction occurs with a plurality of analytes contained in a sample liquid. The analytes are separated on the sample separation portion to perform mass spectrometry on each of the analytes. A sample in contact with the surface of the first reflective member is irradiated with laser beam L to generate resonance in the optical resonator, and an electric field on the surface of the first reflective member is enhanced by the resonance. The enhanced electric field is utilized to ionize analytes S in the sample and to desorb the analytes S from the surface.

The invention discloses a method for improving the efficiency of erasing a floating gate, which comprises the following steps: sequentially forming a floating gate (FG) oxide layer, a FG polycrystalline silicon layer, an oxide layer-nitride layer-oxide layer (ONO) dielectric layer, a control gate (CG) polycrystalline silicon layer, a CG silicon nitride layer, a CG silicon oxide layer and a CG silicon nitride hard mask layer on a semiconductor substrate; coating photoresist on the CG silicon nitride hard mask layer, and patterning the photoresist; taking the patterned photoresist as a mask, and sequentially etching the CG silicon nitride hard mask layer, the CG silicon oxide layer, the CG silicon nitride layer, the CG polycrystalline silicon layer and the ONO dielectric layer to form two CGs; forming a CG side wall layer at two sides of each CG; forming a sacrificial layer at the outside of each CG side wall layer; taking the CG side wall layers, the sacrificial layer and the CG as masks, and etching the FG polycrystalline silicon layer to form FG; removing the sacrificial layer; and sequentially forming the oxide layer and depositing the polycrystalline silicon film outside the CG side wall layer and the FG, and finally forming the erasing gate EG by the polycrystalline silicon film. The method can effectively improve the efficiency of erasing the floating gate.

The invention relates to a multi-jet-flow electrostatic spinning sprayer with uniformly distributed electric fields. The multi-jet-flow electrostatic spinning sprayer with the uniformly distributed electric fields comprises a solution injection tube, a spinneret plate and an electrode. The spinneret plate is a step-shaped spinneret plate formed by overlaying small circular truncated cones on multiple stages of hollow circular truncated cones, and the upper bottom surface of each stage of circular truncated cone is provided with spinneret orifices. The electrode is consistent with a hollow cavity of the spinneret plate in shape, and a gap is reserved between the electrode and the hollow cavity of the spinneret plate to form a solution cavity. The spinneret plate is made of hydrophobic insulation materials. According to the multi-jet-flow electrostatic spinning sprayer with the uniformly distributed electric fields, holes are formed in the hydrophobic insulation materials so that traditional metal needles can be replaced, electric field rejection between the needles is avoided, the rejection effect of jet flow sprayed out from the spinneret plate is weakened, and therefore nanofibers can be collected conveniently; in addition, the electric fields at the position of a center hole are effectively increased by the utilization of the step-shaped electrode and the spinneret plate matched with the step-shaped electrode, therefore, stable jet flow can be formed at the position of the center hole, and the nanofibers with even fineness can be obtained.

The invention discloses a method for measuring the transmission rate of a liquid adherent boundary layer under the effect of an external electric field. The method comprises the steps that an adherent boundary layer area of liquid is determined according to intensity of the electric field and the liquid thickness in the direction of incident rays, and the incident position of the incident rays on a sample groove is determined according to the adherent boundary layer area; incident light intensity of the incident rays and first transmission light intensity after the incident rays penetrate through the empty sample groove are obtained, and light absorbing intensity of the empty sample groove is determined according to the incident light intensity and the first transmission light intensity; incident light intensity of the incident rays and second transmission light intensity after the incident rays penetrate through the sample groove containing liquid to be measured are obtained; based on the incident light intensity, the light absorbing intensity of the empty sample groove and the second transmission light intensity, the transmission rate of the liquid to be measured is determined. The method can achieve the effect of measuring the transmission rate in the electrorheological fluid / ionic liquid boundary layer under the effect of the external electric field.

The present invention discloses a method for ultrasensitive detection of miRNA based on a dual amplification SERS signal system. The surface of 4-MBA-labeled gold nanoparticles is coated with a layerof polydopamine to form a SERS mark with a gold-PDA-silver satellite structure, the raman signal of the SERS mark is amplified greatly by unique localized surface plasmon resonance of gaps between gold and silver nanoparticles; at the same time, an enzymatic digestion circular reaction is combined with a magnetic capture mechanism to further amplify a SERS signal to achieve rapid and highly-sensitive quantitative detection of the miRNA. The method has the advantages of simple operation, good detection stability and high detection sensitivity; an incubation solution after the enzyme digestion circular reaction is sequentially added to functionalized magnetic nanoparticles for reaction, and then reacted with the SERS mark, and magnetic separation is performed just after the reaction is completed to achieve rapid and quantitative detection of the miRNA. The method can be applied to clinical diagnostic screening for early cancer.

The invention discloses kitchen equipment integrating functions of oil fume absorption, oil fume purification and a cooking range. The kitchen equipment comprises a main equipment body and the cooking range. The back plate of the main equipment body extends towards the inclined top of the cooking range to form an oil fume collector; the oil fume collector is communicated with a flow channel in the back plate; the other end of the flow channel extends downwards and is communicated to a bottom cavity arranged at the bottom of the main equipment body; a purification cavity is arranged above the bottom cavity; an electric purification device is placed in the purification cavity and comprises an insulating box body; a positive electrode barrel is arranged on the bottom of the insulating box body, and a negative electrode rod penetrates through the positive electrode barrel; a positive electrode plate and a negative electrode plate are further arranged in the insulating box body, located above the positive electrode barrel and arranged at an interval; and an air fan cavity communicated with the purification cavity is arranged in the main equipment body, an air fan is arranged in the air fan cavity, and the air fan is aligned to an air outlet arranged on the bottom side of the back plate. The kitchen equipment disclosed by the invention has the characteristics of being good in oil fume purification effect, small in power, low in power consumption and cost, and convenient to mount, debug and maintain.