Plasma processing equipment

Abstract

The invention provides plasma processing equipment, and the equipment comprises a reaction cavity, a substrate for carrying a machined workpiece, and a radio frequency antenna device. The radio frequency antenna device comprises an inductive coil, an electrode plate group, and a radio frequency source. The inductive coil and the electrode plate group are in parallel connection, and are electrically connected with the radio frequency source. Moreover, the inductive coil and the electrode plate group are disposed at the top of the reaction cavity, and are respectively corresponding to different positions of the substrate. The equipment employs the electrode plate group to generate plasma at the same time on the basis of employing the inductive coil to generate plasma, and can achieve the adjustment of the distribution density of plasma at different positions, so as to enable the etching results of various types of machined workpieces on the substrate to be uniform, thereby improving the etching uniformity.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a plasma processing equipment. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Currently, in processes such as conventional semiconductor manufacturing, various types of plasma processing equipment have been used, for example, capacitively coupled plasma (CCP) type, inductively coupled plasma (ICP) type, and surface wave or electron cyclotron resonance plasma (ECR) type and so on. Among them, the equipment that uses capacitive coupling to generate plasma has a simple structure and is easy to generate large-area uniformly distributed plasma, which is suitable for etching dielectric and other types of f...

AI Technical Summary

Problems solved by technology

Wherein, the etching height of the outer ring wafer is 1.58um, and the etching height of the central wafer is 1.69um. It can be seen that the closer to the center of the tray 5, the higher the height of the etching profile of the wafer, thereby the etching uniformity is higher. Difference

Moreover, the etched profile of the central wafer often leaves corners or arc structures, making it difficult to form an ideal triangular shape

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