373results about How to "Improve interface properties" patented technology

The invention belongs to the technical field of lithium-ion batteries, and discloses a lithium-ion battery electrolyte and a lithium ion battery with the same. The lithium-ion battery electrolyte is prepared from an organic solvent, conductive lithium salt and an additive; the additive is prepared from a common additive and a phosphoric acid ester additive, and the phosphoric acid ester additive has the structural formula shown in the formula (I) (please see the specification). According to the lithium-ion battery electrolyte, the phosphoric acid ester additive is added, the interface characteristics of the electrode/electrolyte of the lithium-ion battery can be improved, the stability is improved, interface impedance is reduced, the cycling stability, the high-temperature performance and the high-voltage performance of the lithium ion battery are improved accordingly, gas generation caused by organic solvent decomposition is inhibited, and expansion of the battery is reduced.

A ferroelectric stacked-layer structure is fabricated by forming a first polycrystalline ferroelectric film on a polycrystalline or amorphous substrate, and after planarizing a surface of the first ferroelectric film, laminating on the first ferroelectric film a second thin ferroelectric film having the same crystalline structure as the first ferroelectric film. A field effect transistor or a ferroelectric capacitor includes the ferroelectric stacked-layer structure as a gate insulating film or a capacitor film.

The invention discloses a high-multiplying power lithium ion battery and a preparation method thereof. The lithium ion battery comprises a cathode plate, an anode plate, a composite diaphragm and an electrolyte solution, and the surfaces of the diaphragm are coated with composite conductive layers; each composite conductive layer is composed of a bonding agent, a conductive agent and micropores; the cathode plate and the anode plate are each of a full-tab structure. The preparation method comprises the steps that the diaphragm coated with the composite conductive layers, the cathode plate and the anode plate are subjected to a winding process to prepare a wound core, and the wound core is subjected to the processes of packaging, baking, liquid injecting, hot-cold pressing, forming and capacity grading to prepare the high-multiplying power lithium ion battery. According to the high-multiplying power lithium ion battery and the preparation method thereof, by improving the characteristics of the interfaces between the diaphragm and cathode and anode membranes and optimizing the structural design of the battery, the bonding performance of the contact interfaces between the diaphragm and the cathode and anode plates is improved, the lithium ion transfer resistance between the different interfaces is decreased, the electronic conductivity of the cathode and anode plates is enhanced, the porosity and the air permeability of the composite diaphragm are improved, wetting of the electrolyte solution to the diaphragm is improved, the retaining capacity of the electrolyte solution in the battery is improved, the high-multiplying power performance of the lithium ion battery is greatly improved, the high-multiplying power discharge capacity retention rate is increased by 10% or above compared with the prior art, and the high-multiplying power lithium ion battery is suitable for industrialized production.

The invention discloses an IGZO (indium gallium zinc oxide) thin film transistor and a preparing method thereof, wherein the IGZO thin film transistor comprises a substrate, a grid combined on the substrate surface and a silicide grid insulation layer covering the outer surfaces of the substrate and the grid, wherein the surface of the silicide grid insulation layer is subjected to O2/N2O plasma bombardment processing; the surface of the silicide grid insulation layer subjected to the O2/N2O plasma bombardment processing is also combined with a self-assembly single-molecule film layer in a laminating mode, so the film defect state of the silicide grid insulation layer can be reduced after the O2/N2O plasma bombardment, the charge trap action is inhibited, the roughness of the surface of the insulation layer is reduced by the self-assembly single-molecule film layer, the interface property between the insulation layer and an active layer is well improved, charges are prevented from being captured by an interface defect, the carrier mobility of a device is reduced, the threshold voltage is reduced, leak current is reduced and the performance of the device is more stable.

The invention provides a light high-strength buoyancy material and a preparation method thereof. The material comprises the following components in part by weight: 100 parts of low-viscosity epoxy resin, 5 to 10 parts of thermoplastic resin, 16 to 48 parts of hollow microspheres and 10 to 20 parts of curing agent. The preparation method comprises the following steps of: (1) putting 100 weight parts of epoxy resin and 5 to 10 weight parts of engineering plastic into a reaction kettle, and performing prepolymerization reaction on the epoxy resin to obtain epoxy resin prepolymer; and (2) adding 16 to 48 weight parts of hollow microspheres treated by a silane coupling agent and 10 to 20 weight parts of curing agent into 48 to 90 weight parts of epoxy resin prepolymer, uniformly mixing, putting into a vacuum drying oven, vacuumizing, kneading the mixed material by using a grinder, defoaming in vacuum, curing for forming, putting the formed material into a drying box, heating to the curing temperature of an epoxy resin system, and thus obtaining a finished light high-strength buoyancy material product. The material meets the requirements of a deep ocean material on density and strength and the requirements of ocean development and submarine exploration.

The invention discloses a VDMOS transistor and a preparation method thereof and belongs to the field of semiconductors. The VDMOS transistor comprises a first conduction type substrate, a first conduction type epitaxial layer, a second conduction type injection region, a first conduction type highly doped source region and a grid structure, the second conduction type injection region and the first conduction type highly doped source region are arranged in the epitaxial layer, and the grid structure comprises a grid insulating layer, a semi-insulating polycrystalline silicon layer, a silicon oxynitride layer and a polycrystalline silicon layer. The grid insulating layer is arranged above a drift region of the epitaxial layer, the semi-insulating polycrystalline silicon layer is arranged above the grid insulating layer, the silicon oxynitride layer is arranged above a channel region, and the polycrystalline silicon layer is covered on the semi-insulating polycrystalline silicon layer and the silicon oxynitride layer. A heat nitriding silicon oxynitride layer is introduced into the preparation method, a traditional silica layer which is used as a gate medium layer on a channel is replaced, and the semi-insulating polycrystalline silicon layer is added on an oxide layer which is arranged above the drift region of the epitaxial layer. The VDMOS transistor and the preparation method thereof can obviously reduce grid-drain capacitance and achieve overcoming the defects that insulating performance of the grid insulating layer is poor, current leaking of a grid electrode is increased, and degeneration of the VDMOS performance is unreliable.

The invention discloses high-voltage lithium ion battery electrolyte, a preparation method and application of electrolyte. The high-voltage lithium ion battery electrolyte comprises an organic solvent, conductive lithium salt and a functional additive, wherein the organic solvent is prepared from a cyclic carbonate solvent, a fluoro solvent and a linear carbonic ester solvent, the content of the fluoro solvent in the high-voltage lithium ion battery electrolyte is 0.1-40wt.%, the content of the functional additive is 0.01-5wt.%, and the concentration of the conductive lithium salt in the organic solvent is 0.8-1.5mol/L. According to the high-voltage lithium ion battery electrolyte, the interfacial property of the anode and the cathode of the battery and the electrolyte can be improved, and the stability of the electrolyte can be improved, so that the cycle life of the high-voltage lithium ion battery is prolonged, the high-temperature property of the high-voltage lithium ion battery is improved and the working voltage of the high-voltage lithium ion battery is increased to be above 4.5V.

The invention relates to an epsilon-polylysine bionic antibacterial membrane and a preparation method and application thereof. The method for preparing the epsilon-polylysine bionic antibacterial membrane is characterized by comprising the following steps: preparing a gelatinous aqueous solution containing epsilon-polylysine, chitosan, hyaluronic acid, gelatin, polyvinyl alcohol and glycerol, thenadding a cross-linking agent to perform a cross-linking reaction in a patterned template to obtain a gel, and then neutralizing, washing, and drying. The epsilon-polylysine bionic antibacterial membrane has good antibacterial and moisturizing properties, and the composition approximates an extracellular matrix and has a patterned surface that can promote epithelial cell adhesion, growth and migration. Therefore, the epsilon-polylysine bionic antibacterial membrane can be used as a skin wound dressing to improve the wound healing effect.

The invention discloses a silicon carbide-based composite foamed ceramic of a multilayer hole rib structure and a preparation method thereof. The preparation method comprises the following steps: uniformly mixing silicon carbide, micro alumina powder, silicon powder, ammonium lignosulfonate, polycarboxylate and water so as to prepare slurry I; uniformly mixing micro alumina powder, a silicon source polycarboxylate and water so as to prepare slurry II; then dipping polyurethane sponge in the slurry I, and successively carrying out extruding or slurry centrifugation, drying and heat preservation at 600 to 850 DEG C for 0.5 to 3 h so as to obtain a presintered body of silicon carbide foamed ceramic; subjecting the presintered body of silicon carbide foamed ceramic to vacuum dipping in the slurry II and successively carrying out slurry centrifugation and drying so as to obtain a green body of silicon carbide-based composite foamed ceramic; and carrying out heat preservation at 1300 to 1500 DEG C in an air atmosphere for 2 to 4 h so as to prepare the silicon carbide-based composite foamed ceramic of the multilayer hole rib structure. The preparation method has the characteristics of simple process and low cost; and the prepared silicon carbide-based composite foamed ceramic of the multilayer hole rib structure has high mechanical strength, good thermal shock resistance and excellent high-temperature anti-oxidation performance.

The present invention discloses an epitaxial growth process of SiGe/Si material with optochemical vapor deposition equipment in low-temperature and high-background vacuum environment. The main feature of the present invention is organic combinatino of UHV/CVD technology and CVD technology. The SiGe/Si material is grown through reaction in background vacuum superior to 1E(-7) Pa, reaction temperature of 400-450 deg.c and reaction pressure of 1-10 Pa. The SiGe/Si material growth in the process of the present invention has less tress, complete crystal structure, good interface characteristic andhigh practicability.

The invention relates to a high-frequency and low-noise gallium nitride transistor structure with high electronic mobility. The structure comprises a substrate, an aluminium nitride nucleating layer arranged on the substrate and a gallium nitride cushioning layer arranged on the aluminium nitride nucleating layer; the substrate, the aluminium nitride nucleating layer and the gallium nitride cushioning layer are sequentially overlapped from bottom to top; the high-frequency and low-noise gallium nitride transistor structure with the high electronic mobility is characterized in that an InGaN inserting layer for improving roughness of a component interface, an aluminium nitride inserting layer for improving a potential barrier, an AlGaN isolating layer, an AlGaN electronic providing layer, an AlGaN potential barrier layer as well as a source electrode, a grid electrode and a drain electrode which are respectively in ohm connection with the AlGaN potential barrier layer are sequentially overlapped on the gallium nitride cushioning layer. The high-frequency and low-noise gallium nitride transistor structure has the beneficial effects that two-dimensional electronic gas is better bound in a potential well, therefore, scattering of the two-dimensional electronic gas caused by impurities in a channel layer is reduced, and a saturated rate and a mobility ratio of the two-dimensional electronic gas are increased, and a noise performance of a device is improved, particularly a high-frequency noise performance.

The invention relates to a cement-based composite material for pavement of a steel box girder bridge deck, as well as a preparation method and a pavement method thereof. The invention aims at providing a lightweight and high-toughness cement-based composite material which is suitable for pavement of larger-span steel box girder bridge decks, and the cement-based composite material comprises the following components in parts by weight: 849-881 parts of cement, 339-425 parts of quartz sand, 215-273 parts of pottery sand, 100-226 parts of fly ash, 30-56 parts of silica fume, 275-295 parts of water, 10-13 parts of water reducing agent, 40-80 parts of steel fiber, 6.5-13 parts of organic fiber and 20-30 parts of epoxy resin. Through material optimization, the durability of a bridge deck paving layer is improved, the overall dead weight is reduced, the cost of a project is simultaneously saved, and the cement-based composite material is suitable for pavement of the larger-span steel box girder bridge decks.

The present invention relates to polysilicon emitter solar cells, and more particularly to polysilicon emitter solar cells with hyperabrupt junctions, and methods for making such solar cells. According to one aspect, a polysilicon emitter solar cell according to the invention includes a nitrided tunnel insulator. The nitridation prevents boron diffusion, enabling a hyperabrupt junction for a p-poly on n-Si device. According to another aspect, a nitrided oxide (DPN) is used in a tunnel oxide layer of a MIS solar cell structure. The DPN layer minimizes plasma damage, resulting in improved interface properties. An overlying polysilicon emitter can then provide a low sheet resistance emitter without heavy doping effects in the substrate, excess recombination, or absorption, and is a significant improvement over a conventional diffused emitter or TCO. According to another aspect, the invention includes a method for making a solar cell structure that is functionally equivalent to a selective emitter, but without the requirement for multiple diffusions, long diffusions, aligned lithography, or fine contact holes.

The invention discloses a fabrication method for a transistor with a composite gate dielectric GaN-based insulating gate and high electron mobility, mainly aims to solve the problem of low reliability a similar device. The fabrication method comprises the steps of manufacturing a source electrode, a drain electrode and an electric isolating region of an active region on an epitaxial wafer, and enabling an SiN passivation layer to be grown; photoetching and etching a gate slot region in the SiN passivation layer; enabling an AlN dielectric layer to be grown on the gate slot and the SiN passivation layer, and oxidizing the AlN dielectric layer into an AlON composite gate dielectric layer through thermal oxidization or plasma auxiliary oxidization process; manufacturing a gate electrode on the gate dielectric layer; enabling an SiN protection layer to be grown on the gate electrode and the gate dielectric layer out of the gate electrode region; photoetching and etching a metal interlinked open pore region in the SiN protection layer; and manufacturing a metal interlinking layer on the interlinked open pore region and the unopened and non-etched SiN protection layer to complete the manufacturing of the device. By adoption of the fabrication method, the interface characteristic of the device is improved, the reliability of the device is improved, and the device can be used as an efficient microwave power device.

A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by depositing an aluminum oxide layer and a mixed layer of TiON and TiO2 as dielectric layers on a semiconductor substrate having a predetermined lower substructure by an atomic layer deposition (ALD) method and thus forming a double layer structure, and simultaneously providing a high capacitance by using a high dielectric property of a mixed layer of TiON and TiO2.

The invention belongs to the technical field of a lithium ion battery, and particularly relates to a manufacturing method of a lithium ion battery containing gel electrolyte. The manufacturing method comprises the steps of preparation of a micro-pore isolating diaphragm plate, preparation of a cell, pouring of the electrolyte, after-treatment and the like. Compared with the prior art, the manufacturing method provided by the invention adopts a two-step method to polymerize gel; a good cathode pole sheet/electrolyte interface and a good anode pole sheet/electrolyte interface are formed on the cell by a pre-gelling step; in a formation process, a cathode activity material and an anode activity material can be sufficiently activated; the lithium ion battery is pressurized in a heating process after the formation is completed, so that air bubbles generated in the formation process of the battery and existing between the cathode pole sheet/electrolyte interface and the anode pole sheet/electrolyte interface can be removed; and an interface gap can be smaller, thereby being beneficial to the generation of the cathode pole sheet/electrolyte interface and the anode pole sheet/electrolyte interface. Therefore, the battery has better electrochemical performance.

The invention refers to a manufacturing method for a kind of compound polypropylene lithium membrane. The materials are base membrane, polymer and nano SiO2 fillers; the step is: the materials are solved in the solvent, the sol compound can be acquired, and then they are transferred to the culture dish, the membrane is immersed in them; the membrane is taken out and transferred to the template, the solvent is absorbed by the molecular sift, then they are transferred into the vacuum drying box to be dried. The invention emphasizes the humidity to membrane by the polymer and the improvement to the interface performance, the organic group component of the SiO2 surface is important to the performance of the compound membrane. The compound membrane upgrades the room temperature conductivity, and improves the interface performance of the positive material/membrane, lithium/membrane. The assembled battery has an excellent circular performance.