12results about How to "Improve interface properties" patented technology

The invention provides a high-k gate dielectric composite material, a preparation method thereof and a beta-Ga2O3 MOS (Metal Oxide Semiconductor) power device. The composite material comprises a beta-Ga2O3 substrate; the SiO2 interface buffer layer is formed on at least one surface of the beta-Ga2O3 substrate; the Al2O3 transition layer is formed on the surface of the SiO2 interface buffer layer; the AlON interface layer is formed on the surface of the Al2O3 transition layer; and the HfO2 high-k main dielectric layer is formed on the surface of the AlON interface layer. Experimental results show that the composite material provided by the invention has a dielectric constant of 15-30, a forbidden bandwidth of greater than 5eV, an interface state density of less than 1 * 10 < 12 > cm <-2 > eV <-1 > and a breakdown field strength of 7MV / cm-15MV / cm, can effectively improve the interface characteristics of a beta-Ga2O3 MOS power device when being used for the beta-Ga2O3 MOS power device, improves the reliability of a gate medium, and is suitable for being applied to high-voltage and high-temperature power devices.

The present application relates to a kind of vertical channel field effect transistor and its preparation method, belong to semiconductor device technical field.It includes: silicon oxide substrate, its one side is provided with high platform;Wherein, high platform each side is provided with multilayer film structure;First guide groove on the first side of multilayer film structure and first guide groove on the second side of adjacent multilayer film structure are communicated;First guide groove is perpendicular to silicon oxide substrate;Multiple first dielectric layer, is set to the surface of silicon oxide substrate;Wherein, first dielectric layer both sides are provided with second guide groove;Second guide groove is communicated with the nearest first guide groove;First guide groove and second guide groove are provided with nanowire;Source electrode, is set to the side of high platform away from silicon oxide substrate;Multiple gate electrode, each gate electrode is set to the third side of each multilayer film structure, and is connected with dielectric layer.The present application realizes single nanowire high-density multi-independent channel, improves structure utilization.

This invention relates to the field of lubricant technology, specifically to a lubricant for agricultural machinery and its preparation method. This agricultural machinery lubricant, by weight, comprises the following components: 85-93 parts of a first base oil, 2.0-3.0 parts of 1,3-bis(3-phenoxyphenoxy)benzene, 0.2-0.3 parts of zinc dialkyl dithiophosphate, 0.5-1.0 parts of a graphene-based anti-wear additive, 2.0-4.0 parts of polyisobutylene succinimide, 0.5-1.5 parts of a hindered phenolic antioxidant, 1.5-3.0 parts of hydrogenated styrene-isoprene copolymer, and 0.2-0.6 parts of polymethacrylate; wherein the first base oil comprises poly(α-olefin) PAO4 and paraffin oil in a weight ratio of 2-3:1. The agricultural machinery lubricant provided by this invention improves the anti-wear and friction-reducing properties of the graphene-based anti-wear additive, and enhances the stable dispersibility of functionalized graphene in the oil phase and its interfacial properties with the oil phase.

The invention relates to the technical field of semiconductors, and provides a light-emitting diode, a preparation method thereof and a communication system. The light emitting diode comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence. The active layer comprises at least one group of quantum well layers and quantum barrier layers which are periodically and alternately stacked; the quantum well layer comprises an In component; the active layer further comprises at least one covering layer; the covering layer is located between the quantum well layer and the quantum barrier layer; the material of the covering layer is selected from a III-V group nitride semiconductor material, and the bond energy of a chemical bond formed by a metal element contained in the III-V group nitride semiconductor material and a nitrogen element is higher than the bond energy of In-N formed by an indium element and the nitrogen element in the quantum well layer. Through the above arrangement, mutual diffusion of In atoms in the quantum well containing the In component is effectively inhibited, a clear interface of the quantum well layer is maintained, and high-speed LED communication is further realized.

The invention discloses a method for separating rare earth and fluoroaluminum in a high-fluoroaluminum and low-rare-earth-content material, and belongs to the field of rare earth hydrometallurgy. Aiming at the technical problems of poor selectivity and easiness in emulsification when the materials are treated by an existing single extraction system, a five-component synergistic extraction system is adopted, a mixed extraction agent is prepared according to the volume ratio of P204: P507: TBP: sec-octanol: diluent, and after hydrochloric acid pretreatment and ammonia water saponification, three-stage to six-stage counter-current extraction is carried out on the mixed extraction agent and the pretreated material liquid subjected to pH regulation. Rare earth is selectively extracted into an organic phase, fluorine and aluminum are enriched in raffinate, and efficient separation is achieved. And the rare earth-loaded organic phase is subjected to reverse extraction with high-concentration hydrochloric acid to obtain a concentrated rare earth solution, and trace rare earth in raffinate can be recovered through oxalic acid precipitation. Through the synergistic effect of specific components, the separation selectivity is remarkably improved, extraction emulsification is effectively avoided, stable operation of the process is guaranteed, and the method is particularly suitable for efficient treatment of complex high-fluorine-aluminum low-rare-earth materials.

This application relates to the field of in-memory computing memory technology, and more particularly to a three-dimensional ferroelectric memory with an IGZO channel and its fabrication method. The three-dimensional ferroelectric memory with an IGZO channel includes: a bottom global gate line; a center select gate extending vertically relative to the bottom global gate line; a semiconductor stack structure including a gate metal layer, a ferroelectric layer, a gate oxide layer, and an IGZO channel sequentially surrounding the center select gate; a drain and a source extending horizontally relative to the center select gate into the semiconductor stack structure and contacting the ferroelectric layer; and multiple pairs of drains and sources spaced apart along the extension direction of the center select gate to form multiple ferroelectric memory transistor cells. The three-dimensional ferroelectric memory with an IGZO channel of this application improves the durability and reliability of non-volatile memory devices.

The invention provides a semiconductor structure and a preparation method of the semiconductor structure. The semiconductor structure comprises a substrate, an epitaxial layer, a trench gate structure, a doping structure, a source electrode structure and a drain electrode structure, wherein the epitaxial layer is located at one side of the substrate; the trench gate structure is located in the epitaxial layer; the doping structure is located in the epitaxial layer, at least part of the doping structure is located between the groove gate structure and the substrate, and the doping concentration of the doping structure is firstly increased and then decreased in the direction that the substrate points to the epitaxial layer; the source structure is located at one side of the epitaxial layer away from the substrate; the drain structure is located on one side of the substrate away from the epitaxial layer. The performance of the semiconductor structure can be improved by arranging the doping structure with the variable doping concentration.

This invention proposes an all-solid-state lithium-ion battery and its application. The all-solid-state lithium-ion battery includes: a positive electrode; a modified lithium-based composite negative electrode, the modifying material including metal fluorides; and a solid electrolyte membrane disposed between the positive electrode and the modified lithium-based composite negative electrode, wherein the solid electrolyte membrane includes a sulfide electrolyte with the chemical formula Li. a P 1‑b M b S c O d X e , of which 5

The application discloses a silicon-carbon composite material and a preparation method and application thereof, and belongs to the field of electrochemical energy storage. The silicon-carbon composite material comprises a silicon-based active substance and a low-crystallization carbon matrix, the low-crystallization carbon matrix coats and / or disperses the silicon-based active substance; and the Raman spectrum ID / IG value of the low-crystallization carbon matrix is greater than 1.2. The low-crystallization carbon matrix has high disorder degree and toughness, can better adapt to the volume expansion and shrinkage of silicon in the charging and discharging process, maintains the integrity of the electrode structure, and thus significantly improves the cycle stability; the low-crystallization carbon surface contains more defects and functional groups, which is helpful to form a stable and dense SEI film, reduces the side reaction in the cycle process and the irreversible consumption of active lithium.

The application provides a battery cell, which comprises a positive electrode sheet, a separator and a negative electrode sheet; the positive electrode sheet comprises a positive electrode current collector and a positive electrode active material layer; the positive electrode active material layer comprises a positive electrode active material, the positive electrode active material comprises lithium cobaltate, the particle size of the lithium cobaltate is d1, the unit is mu m, and the value range of d1 is 0 mu m < d1 <= 2 mu m; the negative electrode sheet comprises a negative electrode current collector and a negative electrode active material layer coated on the surface of the negative electrode current collector; the thickness of the negative electrode current collector is 7 mu m-11 mu m; the negative electrode active material layer comprises a second binder, and the second binder comprises a CMC compound; by introducing lithium cobaltate particles with a particle size of 0-2 mu m into the positive electrode sheet, adopting a negative electrode current collector with a thickness of 7 mu m-11 mu m, and simultaneously adopting a CMC compound in the negative electrode active material layer, the direct current resistance of the battery can be small, the heat generation in the cycle process can be reduced, the by-products caused by temperature rise can be relatively reduced, and the long cycle performance of the battery cell can be ensured.

The application discloses a composite current collector and a vertical graphite directional deposition method and application of a copper foil surface of the composite current collector. The method comprises the following steps: preparing a (111) single crystal copper foil, evaporating an island-shaped nano copper transition layer, and adopting a two-stage PECVD process to form a planar buffer layer at low power and then to excite vertical growth at high power, and combining pulse gas supply and spectrum monitoring to realize accurate thickness control. The prepared composite current collector has a structure of "single crystal copper foil / planar graphene buffer layer / vertical graphene", the interface resistance is less than 60 Ω, and the contact angle is greater than 125°, and the composite current collector is suitable for fields of lithium ion battery current collectors, heat-conducting interface materials and field emission devices.

This invention relates to the field of interlayer technology in laminated glass, and particularly to a binary composite plasticized gradient structure PVB interlayer, its preparation method, and laminated glass. The interlayer has a three-layer gradient structure, consisting of a first surface layer, a middle sound-insulating layer, and a second surface layer from the outside in. Both the first and second surface layers contain a first PVB resin and a first composite plasticizer, which includes diethylene glycol dibenzoate and 3GO. The middle sound-insulating layer contains a second PVB resin and a second composite plasticizer, which includes a mixture of diethylene glycol dibenzoate and 3GH. This invention, through innovative material formulation and structural design, provides a PVB interlayer solution that balances high weather resistance, excellent sound insulation, strong adhesion, low plasticizer migration tendency, and additional heat insulation functions. It also includes a stable and efficient preparation method, effectively overcoming the limitations of existing technologies where performance cannot be synergistically improved.