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SiGe/Si Chemical vapor deposition growth process

A chemical vapor deposition, silicon germanium technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of epitaxial material pollution, affecting the quality of epitaxial layers, low background vacuum, etc. Clear, reduce material interface unclear, improve the effect of crystal quality

Inactive Publication Date: 2003-05-14
XIDIAN UNIV
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Problems solved by technology

However, the disadvantage of conventional UV / CVD technology is that the background vacuum is low, which makes the epitaxial material susceptible to contamination by oxygen, carbon and other harmful impurities in the atmosphere, which affects the quality of the epitaxial layer
According to the report of J.Electronic Materials, 1990, №5, p1083, the growth of Si by optical CVD technology 1-x Ge x The lining temperature of i material is 250~300℃, but Si 1-x Ge x The crystal quality of the material is poor
[0006] It can be seen that the above-mentioned UHV / CVD and UV / CVD technologies have their own advantages, but for epitaxial growth, device-grade Si with low stress, clear interface characteristics, and complete crystal structure 1-x Ge x / Si materials have their own defects and deficiencies

Method used

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  • SiGe/Si Chemical vapor deposition growth process
  • SiGe/Si Chemical vapor deposition growth process
  • SiGe/Si Chemical vapor deposition growth process

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Embodiment Construction

[0030] The present invention will be further described below through multiple examples realized on the novel photochemical vapor deposition equipment shown in FIG. 2 (this equipment has applied for a Chinese patent with application number 02262163.6).

[0031] Example 1 grows a layer of intrinsic silicon germanium (SiGe) on the Si substrate 1-x Ge x ) material, its technical process is carried out according to the following steps:

[0032] Step 1: filling the processing chamber of the photochemical vapor deposition equipment with high-purity nitrogen to an atmospheric pressure. After the RCA treatment, the Si substrate is quickly placed in the high-purity nitrogen-protected processing chamber 3, and the processing chamber 3 is sealed;

[0033] Step 2: In the processing chamber 3, put the Si substrate into a 10% hydrofluoric acid (HF) solution through a sealed rubber glove, take it out after 30 seconds and put it into the substrate tray; at the same time, fill up the preparat...

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Abstract

The present invention discloses an epitaxial growth process of SiGe / Si material with optochemical vapor deposition equipment in low-temperature and high-background vacuum environment. The main feature of the present invention is organic combinatino of UHV / CVD technology and CVD technology. The SiGe / Si material is grown through reaction in background vacuum superior to 1E(-7) Pa, reaction temperature of 400-450 deg.c and reaction pressure of 1-10 Pa. The SiGe / Si material growth in the process of the present invention has less tress, complete crystal structure, good interface characteristic andhigh practicability.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition growth of crystal materials, in particular to a chemical vapor deposition epitaxial growth method of semiconductor thin film materials. technical background [0002] With the development of semiconductor technology, some new semiconductor materials have appeared in recent years, and silicon germanium (SiGe) alloy is one of them. Due to changing the germanium composition in the alloy, silicon germanium (Si 1-x Ge x ) bandgap width of the material, making silicon germanium / silicon (Si 1-x Ge x / Si) New materials have gained special physical and electrical properties and have attracted people's attention. As long as mature silicon (Si) process technology is adopted, Si can be easily utilized 1-x Ge x materials to produce new microelectronics and optoelectronic devices, among which Si 1-x Ge x / Si heterojunction system devices, with their advantages of ...

Claims

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Application Information

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IPC IPC(8): H01L21/205H01L21/365
Inventor 戴显英张鹤鸣胡辉勇孙建成王玉清
Owner XIDIAN UNIV
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