SiGe/Si Chemical vapor deposition growth process

A chemical vapor deposition, silicon germanium technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of epitaxial material pollution, affecting the quality of epitaxial layers, low background vacuum, etc. Clear, reduce material interface unclear, improve the effect of crystal quality

Inactive Publication Date: 2003-05-14
XIDIAN UNIV
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Problems solved by technology

However, the disadvantage of conventional UV/CVD technology is that the background vacuum is low, which makes the epitaxial material susceptible to contamination by oxygen, carbon and other harmful impurities in the atmosphere, which affects the quality of the epitaxial layer
According to the report of J.Electronic Materials, 1990, №5, p1083, the growth of Si by optical CVD technology 1-x Ge x The

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  • SiGe/Si Chemical vapor deposition growth process
  • SiGe/Si Chemical vapor deposition growth process
  • SiGe/Si Chemical vapor deposition growth process

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[0030] In the following, the present invention will be further explained through a number of examples realized on the new type photochemical vapor deposition equipment shown in FIG. 2 (the equipment has applied for a Chinese patent and the application number is 02262163.6).

[0031] Example 1 is to grow a layer of intrinsic silicon germanium (Si 1-x Ge x )Material, its process is carried out according to the following steps:

[0032] Step 1: Fill the processing chamber of the photochemical vapor deposition equipment with high-purity nitrogen to an atmospheric pressure. Put the Si substrate after RCA treatment into the processing chamber 3 protected by high-purity nitrogen, and seal the processing chamber 3;

[0033] Step 2: In the processing chamber 3, put the Si substrate sheet into a 10% hydrofluoric acid (HF) solution through a sealed rubber glove, take it out after 30 seconds and place it in the substrate sheet tray; at the same time, charge the preparation chamber 4 Pure nitr...

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Abstract

The present invention discloses an epitaxial growth process of SiGe/Si material with optochemical vapor deposition equipment in low-temperature and high-background vacuum environment. The main feature of the present invention is organic combinatino of UHV/CVD technology and CVD technology. The SiGe/Si material is grown through reaction in background vacuum superior to 1E(-7) Pa, reaction temperature of 400-450 deg.c and reaction pressure of 1-10 Pa. The SiGe/Si material growth in the process of the present invention has less tress, complete crystal structure, good interface characteristic andhigh practicability.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition growth of crystal materials, in particular to a chemical vapor deposition epitaxial growth method of semiconductor thin film materials. technical background [0002] With the development of semiconductor technology, some new semiconductor materials have appeared in recent years, and silicon germanium (SiGe) alloy is one of them. Due to changing the germanium composition in the alloy, silicon germanium (Si 1-x Ge x ) bandgap width of the material, making silicon germanium / silicon (Si 1-x Ge x / Si) New materials have gained special physical and electrical properties and have attracted people's attention. As long as mature silicon (Si) process technology is adopted, Si can be easily utilized 1-x Ge x materials to produce new microelectronics and optoelectronic devices, among which Si 1-x Ge x / Si heterojunction system devices, with their advantages of ...

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Application Information

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IPC IPC(8): H01L21/205H01L21/365
Inventor 戴显英张鹤鸣胡辉勇孙建成王玉清
Owner XIDIAN UNIV
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