AlInGaN-based green and yellow light-emitting diode epitaxial structure

A technology of light-emitting diodes and epitaxial structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of V-pit 4 to enhance hole injection, etc., and achieve the effect of enhancing hole injection function and improving luminous efficiency
CN107068818AActive Publication Date: 2017-08-18NANCHANG UNIV +1
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
NANCHANG UNIV
Publication Date
2017-08-18

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Abstract

The invention discloses an AlInGaN-based green and yellow light-emitting diode (LED) epitaxial structure, which comprise a substrate for material growth and an AlInGaN-based semiconductor lamination layer stacked up on the semiconductor, wherein the AlInGaN-based semiconductor lamination layer at least comprises an N-type layer, a P-type layer and AlInGaN multiple quantum wells arranged between the N-type layer and the P-type layer. The structure is characterized in that the multiple quantum wells are embedded by V-shaped pits in periodic arrangement in a growth plane, and such V-shaped pits are same in size; and the plane quantum wells have similar-quantum-dot structures, which become main light-emitting sources of the LED. The epitaxial structure has the following advantages: 1) the similar-quantum-dot structures in the multiple quantum wells reduces impact of dislocation; 2) the multiple quantum wells are embedded by the process V-shaped pits in periodic arrangement in the growth plane, thereby further enhancing the hole injection function of the V-shaped pits; and 3) optimization of enhancement of the hole injection function of the V-shaped pits can be realized, and luminous efficiency of the LED can be improved.
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Description

technical field

[0001] The invention relates to semiconductor materials, in particular to an epitaxial structure of AlInGaN-based green and yellow light emitting diodes. Background technique

[0002] Aluminum indium gallium nitride (AlInGaN)-based light-emitting diodes (LEDs) have a wide range of uses and can be used in markets such as instrument work instructions, traffic lights, large-screen displays, and general lighting. At present, AlInGaN-based LEDs have achieved great success in the blue light band, but their luminous efficiency in longer wave bands such as green and yellow light is still low. The reason is that the In composition of InGaN / GaN multiple quantum wells in green and yellow LEDs is high. A high In composition will introduce two unfavorable factors: 1) The lattice mismatch between the well barriers increases, the compressive stress increases, the piezoelectric polarization effect increases, and the dislocations increase; 2) The In composition is not easily...

Claims

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