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31results about How to "Improve high voltage performance" patented technology

Process for generating multi-step trench transistor using polymer isolation layer

The invention discloses a process for generating a multi-step trench transistor by using a polymer isolation layer. The process comprises the steps of S1 etching a first trench on a silicon wafer substrate; S2 performing oxidation operation on a primarily processed transistor, and generating a silicon oxide protection layer on the inner side wall of the first trench; S3 depositing and forming an organic silicon film layer on the silicon oxide protection layer of the first trench by a spin coating method; S4 carrying out plasma treatment by using fluorine-containing gas; S5 continuously etchingthe Si layer of the silicon wafer substrate downwards at the bottom of the first trench; S6 removing the organic silicon thin film layer at the bottom of the first trench by adopting a wet etching process; and S7 taking the second trench as a substrate, and continuing to repeat the steps S2 to S6, so that the plurality of trenches are in a multi-step shape in sequence. The design structure of theplurality of trenches obtains a larger transistor area in the same packaging volume, so that the quiescent current passing capacity and the high voltage bearing capacity are improved, and the maximized effective transistor area can be improved by more than three times.
Owner:绍兴同芯成集成电路有限公司

Aluminum oxide protection silver nanowire transparent electrode, production method and application thereof

The invention discloses an aluminum oxide protection silver nanowire transparent electrode, a production method and an application thereof. The method comprises the following steps: by taking an annealed silver nanowire transparent conductive film as a cathode, a platinum electrode as an anode, a silver / silver chloride electrode as a reference electrode and a solution containing aluminum nitrate nonahydrate as an electrolyte, electrically depositing an aluminum oxide protective layer on the silver nanowire transparent conductive film in a constant-voltage mode of a three-electrode system, rinsing, and annealing to obtain the aluminum oxide protection silver nanowire transparent electrode. According to the invention, an electro-deposition process is improved by controlling a reaction rate, aluminum oxide is accurately deposited on the surfaces of the silver nanowires without influencing a light-transmitting area, contact between the silver nanowires is promoted through the deposition process, light absorption of a coating layer is avoided through the high-flatness surface, the stability and a photoelectric property are improved, the silver nanowire protection process is greatly simplified, the production cost of the flexible transparent electrode is greatly reduced, and the development of flexible electronics is promoted.
Owner:SOUTH CHINA UNIV OF TECH

Process for generating multi-step trench transistor by using silicon nitride isolation layer

The invention discloses a process for generating a multi-step trench transistor by using a silicon nitride isolation layer. The process comprises the following steps: S1, etching a first trench on a silicon wafer substrate; S2, placing a primarily processed transistor in an oxidation furnace tube, carrying out oxidation operation, and generating a silicon oxide protective layer on the inner side wall of the first trench; S3, forming a silicon nitride film layer on the silicon oxide protective layer of the first trench through deposition by using a chemical vapor deposition process; S4, carrying out plasma treatment by using fluorine-containing gas to form a side wall; S5, continuously etching the Si layer of the silicon wafer substrate downwards at the bottom of the first trench to form asecond trench; and S6, removing the silicon nitride film layer at the bottom of the first trench by an O2 plasma process to form a double-trench structure. According to the invention, the multi-trenchdesign structure obtains a large transistor area in the same packaging volume, so that the quiescent current passing and high voltage bearing capacities of multiple trenches are increased, and the maximized effective transistor area can be increased by three times.
Owner:绍兴同芯成集成电路有限公司

A kind of electrolyte solution containing double boron imide lithium lithium salt against high voltage

The invention provides high voltage resistant electrolyte solution with double boron imide lithium. The electrolyte solution comprises four compositions: organic solvent comprising double boron imide lithium, other lithium, carbonate ester and / or ether, other functional additive and high-voltage additive. The molar concentration of the lithium with double boron imide lithium and the high-voltage additive in the electrolyte solution is 0.001-2mol / L, the molar concentration of the other lithium in the electrolyte solution is 0-2mol / L, and the molar concentration of other functional additive in the electrolyte solution is 0-0.5mol / L. The lithium with double boron imide lithium is an ionic compound, and the positive ions are lithium ions. The electrolyte solution provided by the invention has double boron imide lithium and greatly improves the cryogenic property and the high voltage performance of the electrolyte solution. After the electrolyte solution is applied to a lithium battery at a high temperature of higher than 50 DEG C or a low temperature of lower than minus 20 DEG C, the percentage of the volume of the battery is improved, and the circulating life and the storing life of the lithium battery are prolonged.
Owner:SHANDONG HIRONG POWER SUPPLY MATERIAL

A kind of preparation method of lithium iron phosphate/graphene oxide/platinum composite electrode material

The invention discloses a preparation method of a lithium iron phosphate/graphene oxide/platinum composite electrode material and belongs to the field of electrode materials. Graphene oxide is firstly dispersed in the mixed acid of concentrated sulfuric acids for treatment, the treated graphene oxide is dispersed in platinum chloride and is irradiated by using an ultraviolet lamp, filter residues obtained through separation is dispersed in deionized water, is irradiated by using the ultraviolet lamp and then is dried to obtain graphene oxide supported platinum particles, a hydrothermal method is utilized to prepare lithium iron phosphate particles, then the lithium iron phosphate particles are dispersed in water, the graphene oxide supported platinum particles are added to dispersion liquid, stirring, mixing and drying are performed, the dried product is subjected to high-temperature treatment, and then the composite material is obtained. The reaction conditions are mild, the operating process and a process are simple, a generated conductive composite layer can obviously improve the rate capability, the prepared composite material can obviously improve the rate capability of batteries, the high voltage performance is good, the product purity is high, and the cost is lower.
Owner:董忠贵
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