14 results about "O2 plasma" patented technology

The application discloses a sintered neodymium-iron-boron composite coating with high bonding force and high hydrogen resistance and a preparation method thereof. The method comprises the following steps: (a) substrate pretreatment, wherein surface oxides are removed by energy gradient plasma sputtering cleaning; (b) sputtering an Al layer under an Ar atmosphere and oxidizing under O2 plasma assistance, thereby generating an intermetallic compound anchoring layer of FeAl3 / NdAl2 with a thickness of 1.0-1.5 nm in situ; (c) sequentially depositing 6 layers of Al2O3 layers to form an alternating stack with a total thickness of 20-30 nm, wherein the first, third and fifth layers are prepared by directly sputtering an Al2O3 ceramic target, and the second, fourth and sixth layers are prepared by first sputtering an Al layer and then completely converting by O2 oxidation; (d) low-temperature annealing to fully form Al-O-Fe bonds at the interface; and (e) cooling to room temperature. The application adopts a multi-dimensional in-situ closed-loop monitoring system to realize accurate process control, and is suitable for surface protection of sintered neodymium-iron-boron permanent magnets in hydrogen energy equipment.

A bridge leg photolithography process includes the following steps: S1, providing a product wafer of the bridge leg before photolithography, the product wafer having a SIN film layer grown on its surface; S2, using O2 plasma to perform plasma surface etching on the surface of the SIN film layer for SIN film layer surface pretreatment; S3, coating a resist onto the pretreated SIN film layer surface to obtain a coated wafer; S4, exposing the coated wafer to obtain an exposed wafer; S5, developing the exposed wafer to obtain a developed film; S6, observing the morphology of the bridge leg lines in the developed film. Through the SIN film layer surface pretreatment in step S2, the angle between the sidewall and the bottom surface of the bridge leg in the developed film can be close to perpendicular, thereby obtaining an excellent bridge leg morphology, which is more conducive to ensuring the subsequent etching of the SIN film layer below the bottom surface of the bridge leg.

This invention relates to the field of gallium arsenide-based high-frequency device manufacturing technology, specifically a method and structure for fabricating a Y-shaped gate to reduce gate resistance. The method involves forming a first layer of negative photoresist with an inverted trapezoidal cross-section on a GaAs wafer, depositing a 30nm~80nm sacrificial passivation layer, coating a second layer of negative photoresist, and photolithographically etching out a window. A suspended region is formed through dry etching and O2 plasma etching, followed by metal evaporation and non-destructive lift-off to obtain the Y-shaped gate. This invention fundamentally eliminates the lift-off failure problem caused by the "top-heavy" effect, overcomes the process bottleneck of gate metal thickness, and achieves a significant increase in gold layer thickness, effectively reducing gate resistance. Furthermore, this invention provides a Y-shaped gate structure fabricated by this method, which has high bottom support strength and exhibits no process stress damage in its Schottky contact with the GaAs substrate, significantly improving the high-frequency performance and reliability of the device.

A plasma processing device comprises: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber and containing alumina; a gas supply unit; a plasma generation unit; and a control unit. The control unit is configured to execute control including: (a) control of bringing, in the plasma processing chamber, a trimethylaluminum-containing gas supplied by using the gas supply unit into contact with the electrostatic chuck to deposit a trimethylaluminum-containing film on the electrostatic chuck; and (b), after the (a), control of bringing, in the plasma processing chamber, an O2 plasma generated by using the gas supply unit and the plasma generation unit into contact with the trimethylaluminum-containing film to form an alumina-containing film on the electrostatic chuck.

The application provides a plasma-assisted tin dioxide preparation method, which comprises the following steps: pretreating a substrate and then blowing Ar gas; introducing an organic tin precursor; blowing Ar gas to remove the excess precursor; introducing H2O vapor with a flow rate of 1-2 sccm and continuously reacting for 30-60 S to form Sn-OH bonds and hydrolyze residual organic ligands; blowing Ar gas; introducing H2 plasma short pulses with a pulse width of 0.5-2 S and a frequency of 1-5 Hz to react with residual organic carbon on the surface, generate CH4 and remove the CH4, and form Sn-H saturated surface dangling bonds; blowing Ar gas to remove H2 and reaction byproducts; introducing O2 plasma to oxidize Sn-H into SnO2 lattice structure; blowing Ar gas; judging whether the film thickness reaches a target value; if not, returning to step 2; and if yes, cooling and taking out, so that the amount of organic ligand impurities is reduced, and the quality of the tin dioxide film is improved.

The present application relates to the field of semiconductor, especially to a kind of aluminum post-corrosion product precision removal method and equipment based on wet pretreatment and atomic layer etching, including detecting wafer after aluminum etching;60%~90% of large-area loose corrosion product is removed by wet pretreatment, wet pretreatment is 2.38%TMAH solution room temperature immersion 30~60s, rinsed with deionized water, IPA vapor drying;According to wafer pattern complexity, select P-ALE or hot ALE scheme, carry out 3~6 times etching cycle;O2 plasma is introduced to form passivation film, the present application is seamlessly integrated with existing semiconductor dry etching equipment, realizes digital precision control;Neutralize acidic residue in wet pretreatment, dry thoroughly, form dense passivation film after ALE, break the self-circulation corrosion chain from the source, avoid secondary corrosion and pattern collapse problem.

The present disclosure provides a method of manufacturing an SOI substrate. A stop layer, a semiconductor layer, an insulating buried layer, and a first bonding insulating layer are formed in sequence on a sacrificial wafer. A second bonding insulating layer is formed on a reference wafer. The first bonding insulating layer and the second bonding insulating layer comprise silicon carbon nitride (SiCN) material. Si-OH bonds are formed in the first bonding insulating layer and the second bonding insulating layer by an O2 plasma treatment. The sacrificial wafer is bonded to the reference wafer such that the first bonding insulating layer contacts the second bonding insulating layer.

A wearable wound management system integrating a flexible microfluidic assembly and real-time electrochemical sensing to autonomously sample, transport, and analyze wound exudate. A Janus membrane, formed by selective deposition of perfluoroalkyl-functionalized silica nanoparticles and O2 plasma etching on a PET film, may collect fluid via its superhydrophobic wound-facing side and deliver it to a curved, wedge-shaped microfluidic channel that enhances capillary flow. Downstream, a graded PDMS micropillar array refreshes a sensing region by unidirectional fluid movement. A drop-on-demand inkjet-printed, CO2 laser-patterned flexible sensor patch may measure nitric oxide, oxygen, hydrogen peroxide, pH, temperature, and other relevant metrics. An encapsulated wireless electronic module may transmit health data for wireless monitoring. This system, combined with machine-learning analytics, may enable continuous, in situ monitoring and predictive wound classification, supporting proactive and personalized chronic wound care.

The invention discloses a method for improving CDU through substrate treatment, which comprises the following steps of: 1, depositing a titanium nitride layer as a hard mask layer on a semiconductor substrate to be subjected to a photoetching process, and depositing a silicon oxide layer on the surface of the titanium nitride layer; 2, carrying out a one-step substrate treatment process, and carrying out O2 plasma surface treatment on the wafer in a process cavity; and 3, coating photoresist on the surface of the silicon oxide layer, and performing an exposure process. According to the invention, a one-step substrate treatment process is added, O2 plasma surface treatment is added, a nitrogen-containing layer on the surface is oxidized through O2 plasma, stable nitrogen oxide is formed, and precipitation and release of N are reduced; the plasma treatment can generate a compact inorganic layer on the surface of the substrate to prevent the internal nitrogen component from diffusing to the surface, so that the occurrence of photoresist poisoning is reduced.

The invention discloses a manufacturing method of a metal electrode of an MEMS gyroscope. The manufacturing method comprises the following steps: carrying out first O2 plasma and ICP etching pretreatment on the surface of a wafer; manufacturing a photoresist mask layer with an inverted trapezoidal shape on the first surface of the pre-processed wafer by using negative photoresist photoetching; carrying out O2 plasma treatment on the surface on which the photoresist mask layer is prepared for the second time; manufacturing a metal film layer on the surface subjected to the second O2 plasma treatment by using an evaporation process; and removing the photoresist mask layer and the metal thin film layer by using a stripping process to prepare the MEMS gyroscope metal electrode.

The present application relates to the technical field of solar cells, in particular to a flexible gallium arsenide solar cell for space and a preparation method thereof, which comprises the following steps: bonding of a gallium arsenide epitaxial layer and a PI substrate; thinning and peeling of a GaAs substrate; preparation of a GZO transparent current collection layer; preparation of a metal electrode; deposition of an anti-reflection film layer; etching of a lower electrode and temporary bonding and peeling; the preparation of the GZO transparent current collection layer comprises magnetron sputtering of a GZO transparent film, LED low-temperature light-assisted annealing treatment and in-situ Ar / O2 mixed plasma cleaning. The present application solves key problems such as flexible substrate compatibility, interface performance optimization and space environment adaptation by the synergistic effect of the design of the GZO transparent current collection layer, LED low-temperature light-assisted annealing and in-situ Ar / O2 plasma cleaning, and is suitable for the fields of aerospace and aviation.

The present application relates to the technical field of solar cells, in particular to a flexible gallium arsenide solar cell for space and a preparation method thereof, which comprises the following steps: bonding of a gallium arsenide epitaxial layer and a PI substrate; thinning and peeling of a GaAs substrate; preparation of a GZO transparent current collection layer; preparation of a metal electrode; deposition of an anti-reflection film layer; etching of a lower electrode and temporary bonding and peeling; the preparation of the GZO transparent current collection layer comprises magnetron sputtering of a GZO transparent film, LED low-temperature light-assisted annealing treatment and in-situ Ar / O2 mixed plasma cleaning. The present application solves key problems such as flexible substrate compatibility, interface performance optimization and space environment adaptation by the synergistic effect of the design of the GZO transparent current collection layer, LED low-temperature light-assisted annealing and in-situ Ar / O2 plasma cleaning, and is suitable for the fields of aerospace and aviation.

A highly efficient carbon fiber surface treatment method and its composite material belong to the field of composite material technology. Step 1: Wash the carbon fiber with acetone to completely remove sizing agent and impurities, then dry it. Step 2: Wind the carbon fiber onto a glass frame and perform plasma treatment under an O2-Ar mixed gas atmosphere. Step 3: Dissolve polyimide resin in N,N-dimethylacetamide to prepare a resin solution. Step 4: Prepare a prepreg by combining the carbon fiber and resin solution. Step 5: Stack multiple prepreg sheets, set a stepped heating program, and prepare the composite material by high-temperature hot pressing. In this invention, Ar plasma etches the carbon fiber surface, increasing the surface area and surface roughness, while O2 plasma introduces oxygen-containing functional groups into the carbon fiber surface. The synergistic effect of these two processes improves the mechanical interlocking and chemical bonding between the carbon fiber and the resin matrix, significantly enhancing the interlaminar shear strength at both room temperature and high temperature.

The invention discloses a high-linearity enhanced GaN-based HEMT (High Electron Mobility Transistor) device and a preparation method thereof, and the preparation method comprises the steps: carrying out the etching of a P-GaN cap layer outside a gate region, and obtaining a P-GaN gate; preparing a source electrode and a drain electrode on the barrier layer; preparing a SiNx hard mask layer on the source electrode, the drain electrode, the barrier layer and the P-GaN grid electrode; selectively etching the SiNx mask layer on the P-GaN grid in a partitioned manner, and sequentially carrying out O2 plasma treatment and annealing to form a plurality of plasma treatment regions; removing the residual SiNx mask layer on the P-GaN grid electrode, and preparing grid electrode metal on the P-GaN grid electrode and the plasma processing region; and removing the SiNx mask layer in the region where the source electrode and the drain electrode are located to form a contact hole. The grid bias voltage corresponding to the threshold voltage and the transconductance peak value of the device formed in the area, subjected to O2 plasma processing, of the grid is improved, the transconductance peak of the grid is coupled with the transconductance peak of the device formed in the unprocessed area, the transconductance of the device is increased, the stable input voltage swing is kept, and the nonlinear distortion of signals is reduced.