The invention discloses a method for controllably removing residual optical photoresist in a graphene-metal contact region. The method includes the steps that an organic layer is self-assembled on the surface of graphene, an inorganic layer is deposited, and the organic layer and the inorganic layer serve as double protective layers of graphene; the double protective layers of graphene are spin-coated with a layer of photoresist, the photoresist is exposed, reversely rotated, flooded and developed, and patterns needed for manufacturing a metal electrode are formed; residual photoresist on the surface of the inorganic layer is removed through O2 plasma, the portion, in the graphene-metal contact region, of the inorganic layer is etched away through a wet method, the portion, in the graphene-metal contact region, of an organic thin film is controllably removed through organic corrosive liquid, and it is guaranteed that no residual photoresist exists on the surface of the graphene-metal contact region. The problem that the photoresist is prone to be left on the surface of graphene is solved, graphene is not damaged, the doping degree of graphene is reduced, and an established graphene field effect transistor can keep the high carrier mobility of graphene materials and the performance of a device.