22 results about "O2 plasma" patented technology

The invention discloses a high-throughput electrochemical detection platform based on an ultra-infiltration micro-droplet array, a preparation method of the high-throughput electrochemical detection platform and application of the high-throughput electrochemical detection platform in AD marker detection, and belongs to the technical field of intersection of analytical chemistry, biosensing and material science. The method comprises the following steps: cleaning and drying a substrate, and immersing the surface of the substrate in a fluorosilane solution to form a super-hydrophobic layer by adopting a dip-coating method; after covering with a mask plate, etching with O2 plasma so as to form a hydrophilic microdot matrix; respectively printing an Ag / AgCl reference electrode, a gold working electrode and a carbon counter electrode on the hydrophilic microdots; electrode wires are printed layer by layer, a reference electrode wire, a working electrode wire and a counter electrode wire are sequentially printed in the area outside the hydrophilic microdot matrix from bottom to top in a spin-coating PDMS layer separation mode after each layer of electrode wire is printed, and PDMS is spin-coated above the counter electrode wire for packaging after printing is completed; and on each gold working electrode, respectively modifying capture antibodies of A beta 42, A beta 40, P-tau181 and P-tau217 proteins through a sample application instrument, so as to obtain the detection kit.

The application discloses a sintered neodymium-iron-boron composite coating with high bonding force and high hydrogen resistance and a preparation method thereof. The method comprises the following steps: (a) substrate pretreatment, wherein surface oxides are removed by energy gradient plasma sputtering cleaning; (b) sputtering an Al layer under an Ar atmosphere and oxidizing under O2 plasma assistance, thereby generating an intermetallic compound anchoring layer of FeAl3 / NdAl2 with a thickness of 1.0-1.5 nm in situ; (c) sequentially depositing 6 layers of Al2O3 layers to form an alternating stack with a total thickness of 20-30 nm, wherein the first, third and fifth layers are prepared by directly sputtering an Al2O3 ceramic target, and the second, fourth and sixth layers are prepared by first sputtering an Al layer and then completely converting by O2 oxidation; (d) low-temperature annealing to fully form Al-O-Fe bonds at the interface; and (e) cooling to room temperature. The application adopts a multi-dimensional in-situ closed-loop monitoring system to realize accurate process control, and is suitable for surface protection of sintered neodymium-iron-boron permanent magnets in hydrogen energy equipment.

A bridge leg photolithography process includes the following steps: S1, providing a product wafer of the bridge leg before photolithography, the product wafer having a SIN film layer grown on its surface; S2, using O2 plasma to perform plasma surface etching on the surface of the SIN film layer for SIN film layer surface pretreatment; S3, coating a resist onto the pretreated SIN film layer surface to obtain a coated wafer; S4, exposing the coated wafer to obtain an exposed wafer; S5, developing the exposed wafer to obtain a developed film; S6, observing the morphology of the bridge leg lines in the developed film. Through the SIN film layer surface pretreatment in step S2, the angle between the sidewall and the bottom surface of the bridge leg in the developed film can be close to perpendicular, thereby obtaining an excellent bridge leg morphology, which is more conducive to ensuring the subsequent etching of the SIN film layer below the bottom surface of the bridge leg.

The embodiment of the application discloses a double-layer patterned sapphire substrate, a preparation method and an LED epitaxial wafer. The preparation method comprises the following steps: providing a first sapphire substrate and a second sapphire substrate; forming a convex microstructure on a first surface of the first sapphire substrate and a concave microstructure on a first surface of the second sapphire substrate; performing O2 plasma surface activation treatment on second surfaces of the first sapphire substrate and the second sapphire substrate; cleaning the second surfaces of the first sapphire substrate and the second sapphire substrate by using ammonia water to form Al-OH chemical bonds; and mutually adhering the second surfaces of the first sapphire substrate and the second sapphire substrate and performing vacuum heat treatment, so that the second surfaces of the first sapphire substrate and the second sapphire substrate are mutually bonded. By bonding the sapphire substrates with different patterns, the reflectivity of light is effectively improved, the light extraction efficiency is maximized, and the heat dissipation problem caused by the substrate thickness is reduced.

The invention discloses a PI modified PVDF composite electrolyte-based solid-state battery interface optimization method and a battery structure, and the method comprises the following steps: (1) preparing a PI modified PVDF electrolyte membrane, and carrying out Ar / O2 plasma treatment to reduce the surface contact angle from 85 degrees to 35 degrees; (2) coating a transition layer containing 5wt% of PI nanoflowers and 0.5 wt% of LATP nanowires on a positive electrode current collector subjected to anodic oxidation and carbon nanotube modification, and inducing 78 + / -3% of nanowires to be oriented along the normal direction through a 10V / mm direct-current electric field; and (3) constructing the molecular interpenetrating network at 100 DEG C by adopting 5-8-12 MPa step hot pressing. According to the technology, the interface impedance is reduced to 4.2 omega, the ionic conductivity reaches 1.38 * 10 <-3 > S / cm, and gt is still kept at-40 DEG C; 10 <-4 > S / cm, and the capacity retention ratio gt after 600 times of 5C circulation; 95%. Through a plasma activation-electric field orientation-hot pressing triple cooperation mechanism, the technical problems of high interface impedance and poor cycling stability of the solid-state battery are solved, the assembly time of a single battery is less than or equal to 5 minutes, and the solid-state battery has an industrial application prospect.

The present application relates to a kind of wide temperature range long-life ablation glass-ceramic multilayer composite coating and preparation method. By high temperature in-situ reaction, plasma spraying is alternately deposited and hot coating composite process, a kind of YAS-[HfC / ZrC]3-SiC multilayer composite ablation-resistant coating is prepared on the surface of carbon / carbon composite material, SiC ceramic inner layer is used to relieve the thermal mismatch between coating and matrix, (Hf,Zr) O2 binary solid solution formed by in-situ oxidation of [HfC / ZrC]3 ceramic intermediate layer improves the high-temperature oxygen resistance of coating, YAS outer layer cooperates with the crack healing, pore filling effect of glass to synergistically improve the medium-low temperature oxygen resistance and strong scouring resistance of coating, the multilayer coating structure can realize the long-time effective ablation protection of carbon / carbon composite material under the coupling of " wide temperature range oxidation-strong scouring ". The YAS-[HfC / ZrC]3-SiC multilayer composite coating prepared by the present application has an ablation resistance time of more than 1000s in Ar-O2 plasma ablation environment, more than 300s in oxyacetylene ablation environment and more than 60s in laser ablation environment.

This invention relates to the field of gallium arsenide-based high-frequency device manufacturing technology, specifically a method and structure for fabricating a Y-shaped gate to reduce gate resistance. The method involves forming a first layer of negative photoresist with an inverted trapezoidal cross-section on a GaAs wafer, depositing a 30nm~80nm sacrificial passivation layer, coating a second layer of negative photoresist, and photolithographically etching out a window. A suspended region is formed through dry etching and O2 plasma etching, followed by metal evaporation and non-destructive lift-off to obtain the Y-shaped gate. This invention fundamentally eliminates the lift-off failure problem caused by the "top-heavy" effect, overcomes the process bottleneck of gate metal thickness, and achieves a significant increase in gold layer thickness, effectively reducing gate resistance. Furthermore, this invention provides a Y-shaped gate structure fabricated by this method, which has high bottom support strength and exhibits no process stress damage in its Schottky contact with the GaAs substrate, significantly improving the high-frequency performance and reliability of the device.

A plasma processing device comprises: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber and containing alumina; a gas supply unit; a plasma generation unit; and a control unit. The control unit is configured to execute control including: (a) control of bringing, in the plasma processing chamber, a trimethylaluminum-containing gas supplied by using the gas supply unit into contact with the electrostatic chuck to deposit a trimethylaluminum-containing film on the electrostatic chuck; and (b), after the (a), control of bringing, in the plasma processing chamber, an O2 plasma generated by using the gas supply unit and the plasma generation unit into contact with the trimethylaluminum-containing film to form an alumina-containing film on the electrostatic chuck.

The invention discloses a preparation method of an adsorption-photocatalysis porous PLA / TiO2 / g-C3N4 composite fiber. The preparation method is specifically implemented according to the following steps: step 1, preparing a flower-like TiO2 / g-C3N4 heterojunction photocatalyst; step 2, preparing a PLA / TiO2 / g-C3N4 spinning solution; step 3, preparing a porous PLA / TiO2 / g-C3N4 composite fiber; and step 4, preparing the adsorption-photocatalysis porous PLA / TiO2 / g-C3N4 composite fiber. The invention also discloses the composite fiber prepared by the preparation method of the adsorption-photocatalysis porous PLA / TiO2 / g-C3N4 composite fiber. The porous PLA / TiO2 / g-C3N4 composite fiber is prepared by adopting an electrostatic spinning method and based on a phase separation principle and an O2 plasma etching principle, the adsorption-photocatalysis performance is improved, the problem that a powder photocatalyst is difficult to recycle is solved, and the problem that petroleum-based photocatalytic fiber is difficult to retreat after being used is solved by utilizing the biodegradability of PLA.

The invention relates to a graphene oxide film as well as a preparation method and application thereof. For the pGO membrane, in a Fourier transform infrared spectrogram of the surface of the pGO membrane, a vibration peak exists in a wave band of 1840-1860 cm <-1 >; the ratio of the number of carbon atoms on the surface to the number of oxygen atoms on the surface is (1-1.5): 1; the preparation method comprises the following steps: treating the mGO membrane by using O2 plasma. The surface of the fGO membrane comprises the following groups: a semi-ionic C-F bond or a covalent C-F bond, the ratio of the number of fluorine atoms on the surface to the number of oxygen atoms on the surface is (0.19-0.30): 1, and the preparation method of the fGO membrane comprises the following steps: carrying out fluorination treatment on the mGO membrane by using XeF2. The graphene oxide membrane can selectively permeate water or an organic solvent in a water-organic solvent steam system, and the separation flux of the water or the organic solvent can be improved.

The application provides a plasma-assisted tin dioxide preparation method, which comprises the following steps: pretreating a substrate and then blowing Ar gas; introducing an organic tin precursor; blowing Ar gas to remove the excess precursor; introducing H2O vapor with a flow rate of 1-2 sccm and continuously reacting for 30-60 S to form Sn-OH bonds and hydrolyze residual organic ligands; blowing Ar gas; introducing H2 plasma short pulses with a pulse width of 0.5-2 S and a frequency of 1-5 Hz to react with residual organic carbon on the surface, generate CH4 and remove the CH4, and form Sn-H saturated surface dangling bonds; blowing Ar gas to remove H2 and reaction byproducts; introducing O2 plasma to oxidize Sn-H into SnO2 lattice structure; blowing Ar gas; judging whether the film thickness reaches a target value; if not, returning to step 2; and if yes, cooling and taking out, so that the amount of organic ligand impurities is reduced, and the quality of the tin dioxide film is improved.

The present application relates to the field of semiconductor, especially to a kind of aluminum post-corrosion product precision removal method and equipment based on wet pretreatment and atomic layer etching, including detecting wafer after aluminum etching;60%~90% of large-area loose corrosion product is removed by wet pretreatment, wet pretreatment is 2.38%TMAH solution room temperature immersion 30~60s, rinsed with deionized water, IPA vapor drying;According to wafer pattern complexity, select P-ALE or hot ALE scheme, carry out 3~6 times etching cycle;O2 plasma is introduced to form passivation film, the present application is seamlessly integrated with existing semiconductor dry etching equipment, realizes digital precision control;Neutralize acidic residue in wet pretreatment, dry thoroughly, form dense passivation film after ALE, break the self-circulation corrosion chain from the source, avoid secondary corrosion and pattern collapse problem.

The present disclosure provides a method of manufacturing an SOI substrate. A stop layer, a semiconductor layer, an insulating buried layer, and a first bonding insulating layer are formed in sequence on a sacrificial wafer. A second bonding insulating layer is formed on a reference wafer. The first bonding insulating layer and the second bonding insulating layer comprise silicon carbon nitride (SiCN) material. Si-OH bonds are formed in the first bonding insulating layer and the second bonding insulating layer by an O2 plasma treatment. The sacrificial wafer is bonded to the reference wafer such that the first bonding insulating layer contacts the second bonding insulating layer.

A wearable wound management system integrating a flexible microfluidic assembly and real-time electrochemical sensing to autonomously sample, transport, and analyze wound exudate. A Janus membrane, formed by selective deposition of perfluoroalkyl-functionalized silica nanoparticles and O2 plasma etching on a PET film, may collect fluid via its superhydrophobic wound-facing side and deliver it to a curved, wedge-shaped microfluidic channel that enhances capillary flow. Downstream, a graded PDMS micropillar array refreshes a sensing region by unidirectional fluid movement. A drop-on-demand inkjet-printed, CO2 laser-patterned flexible sensor patch may measure nitric oxide, oxygen, hydrogen peroxide, pH, temperature, and other relevant metrics. An encapsulated wireless electronic module may transmit health data for wireless monitoring. This system, combined with machine-learning analytics, may enable continuous, in situ monitoring and predictive wound classification, supporting proactive and personalized chronic wound care.

The application discloses a kind of UHMWPE fiber reinforced epoxy composite battery protection plate and preparation method and application, belong to high polymer composite material and battery safety protection technical field.The application is through "plasma surface activation-GA / PEI and its derivative synergistic co-deposition-metal ion secondary coordination crosslinking-epoxy resin impregnation pre-curing-composite layer / metal layer laminating molding" multistage interface enhancement route, solve the problem that UHMWPE fiber surface inertness is big, and weak with epoxy matrix bonding, and easy interlayer peeling under impact.Experimental results show that:O2 plasma treatment 320 s can significantly improve fiber interface reactivity;After continuous modification by GA / PEI and its derivatives and metal ions, the peel strength and bending strength of the composite material are significantly improved;Under the working condition of 300 J drop hammer, the protection plate can remain without penetration failure and improve the energy absorption capacity.The application has clear process window, raw materials are easy to obtain, and has good repeatability, and is suitable for the manufacture of lightweight high-safety protection structure of new energy vehicles and energy storage systems.

The invention discloses a method for improving CDU through substrate treatment, which comprises the following steps of: 1, depositing a titanium nitride layer as a hard mask layer on a semiconductor substrate to be subjected to a photoetching process, and depositing a silicon oxide layer on the surface of the titanium nitride layer; 2, carrying out a one-step substrate treatment process, and carrying out O2 plasma surface treatment on the wafer in a process cavity; and 3, coating photoresist on the surface of the silicon oxide layer, and performing an exposure process. According to the invention, a one-step substrate treatment process is added, O2 plasma surface treatment is added, a nitrogen-containing layer on the surface is oxidized through O2 plasma, stable nitrogen oxide is formed, and precipitation and release of N are reduced; the plasma treatment can generate a compact inorganic layer on the surface of the substrate to prevent the internal nitrogen component from diffusing to the surface, so that the occurrence of photoresist poisoning is reduced.

The invention relates to the field of fuel cells, in particular to a batch preparation method and a production line of an enhanced perfluorosulfonic acid proton exchange membrane. The proton exchange membrane prepared by the invention comprises a perfluorosulfonic acid-based membrane, a double-sided grafting layer and a double-sided functional layer, the double-sided grafting layer comprises a perfluoroalkyl silane coupling agent containing nano silicon dioxide, and the double-sided functional layer comprises sulfonated COFs and an ionic liquid-containing functionalized siloxane dynamic cross-linking agent solution. After the base film is activated by Ar and O2 plasmas, the base film is coated with a perfluoroalkyl silane coupling agent containing hydroxylated nano SiO2, a covalent bond bridging layer is formed through hydrolytic condensation, the interlayer binding force is remarkably improved, crack propagation is inhibited, then UV and IR are subjected to synergistic cross-linking, a dual-function network of rapid curing and dynamic optimization is achieved, and the composite film is prepared. And in the roll-to-roll process, through double-sided asynchronous coating, thermal field induced crystallization and five-stage gradient annealing, the production line speed is matched, and the high flatness and swelling resistance of the membrane material are ensured.

The invention discloses a manufacturing method of a metal electrode of an MEMS gyroscope. The manufacturing method comprises the following steps: carrying out first O2 plasma and ICP etching pretreatment on the surface of a wafer; manufacturing a photoresist mask layer with an inverted trapezoidal shape on the first surface of the pre-processed wafer by using negative photoresist photoetching; carrying out O2 plasma treatment on the surface on which the photoresist mask layer is prepared for the second time; manufacturing a metal film layer on the surface subjected to the second O2 plasma treatment by using an evaporation process; and removing the photoresist mask layer and the metal thin film layer by using a stripping process to prepare the MEMS gyroscope metal electrode.

The present application relates to the technical field of solar cells, in particular to a flexible gallium arsenide solar cell for space and a preparation method thereof, which comprises the following steps: bonding of a gallium arsenide epitaxial layer and a PI substrate; thinning and peeling of a GaAs substrate; preparation of a GZO transparent current collection layer; preparation of a metal electrode; deposition of an anti-reflection film layer; etching of a lower electrode and temporary bonding and peeling; the preparation of the GZO transparent current collection layer comprises magnetron sputtering of a GZO transparent film, LED low-temperature light-assisted annealing treatment and in-situ Ar / O2 mixed plasma cleaning. The present application solves key problems such as flexible substrate compatibility, interface performance optimization and space environment adaptation by the synergistic effect of the design of the GZO transparent current collection layer, LED low-temperature light-assisted annealing and in-situ Ar / O2 plasma cleaning, and is suitable for the fields of aerospace and aviation.

The present application relates to the technical field of solar cells, in particular to a flexible gallium arsenide solar cell for space and a preparation method thereof, which comprises the following steps: bonding of a gallium arsenide epitaxial layer and a PI substrate; thinning and peeling of a GaAs substrate; preparation of a GZO transparent current collection layer; preparation of a metal electrode; deposition of an anti-reflection film layer; etching of a lower electrode and temporary bonding and peeling; the preparation of the GZO transparent current collection layer comprises magnetron sputtering of a GZO transparent film, LED low-temperature light-assisted annealing treatment and in-situ Ar / O2 mixed plasma cleaning. The present application solves key problems such as flexible substrate compatibility, interface performance optimization and space environment adaptation by the synergistic effect of the design of the GZO transparent current collection layer, LED low-temperature light-assisted annealing and in-situ Ar / O2 plasma cleaning, and is suitable for the fields of aerospace and aviation.

A highly efficient carbon fiber surface treatment method and its composite material belong to the field of composite material technology. Step 1: Wash the carbon fiber with acetone to completely remove sizing agent and impurities, then dry it. Step 2: Wind the carbon fiber onto a glass frame and perform plasma treatment under an O2-Ar mixed gas atmosphere. Step 3: Dissolve polyimide resin in N,N-dimethylacetamide to prepare a resin solution. Step 4: Prepare a prepreg by combining the carbon fiber and resin solution. Step 5: Stack multiple prepreg sheets, set a stepped heating program, and prepare the composite material by high-temperature hot pressing. In this invention, Ar plasma etches the carbon fiber surface, increasing the surface area and surface roughness, while O2 plasma introduces oxygen-containing functional groups into the carbon fiber surface. The synergistic effect of these two processes improves the mechanical interlocking and chemical bonding between the carbon fiber and the resin matrix, significantly enhancing the interlaminar shear strength at both room temperature and high temperature.

The invention discloses a high-linearity enhanced GaN-based HEMT (High Electron Mobility Transistor) device and a preparation method thereof, and the preparation method comprises the steps: carrying out the etching of a P-GaN cap layer outside a gate region, and obtaining a P-GaN gate; preparing a source electrode and a drain electrode on the barrier layer; preparing a SiNx hard mask layer on the source electrode, the drain electrode, the barrier layer and the P-GaN grid electrode; selectively etching the SiNx mask layer on the P-GaN grid in a partitioned manner, and sequentially carrying out O2 plasma treatment and annealing to form a plurality of plasma treatment regions; removing the residual SiNx mask layer on the P-GaN grid electrode, and preparing grid electrode metal on the P-GaN grid electrode and the plasma processing region; and removing the SiNx mask layer in the region where the source electrode and the drain electrode are located to form a contact hole. The grid bias voltage corresponding to the threshold voltage and the transconductance peak value of the device formed in the area, subjected to O2 plasma processing, of the grid is improved, the transconductance peak of the grid is coupled with the transconductance peak of the device formed in the unprocessed area, the transconductance of the device is increased, the stable input voltage swing is kept, and the nonlinear distortion of signals is reduced.