Method for manufacturing semiconductor device

A semiconductor and plasma technology, applied in semiconductor/solid-state device manufacturing, photoengraving process of pattern surface, optics, etc., can solve problems such as total productivity decline and overall process complexity
CN1992156AInactive Publication Date: 2007-07-04SK HYNIX INC
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Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
SK HYNIX INC
Publication Date
2007-07-04
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing anti-reflection film.
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Description

technical field

[0001] In general terms, the present invention relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to a method of forming a pattern that can overcome resolution limitations of photolithography for fabricating semiconductor devices. Background technique

[0002] Recently, a double exposure method has been performed to form fine patterns of semiconductor devices in order to overcome resolution limitations of exposure equipment. This general method is described below.

[0003] Referring to FIGS. 1 a and 1 b , a bottom layer 12 , a first hard mask layer 13 , a first anti-reflection film 14 , and a first photoresist film 15 are sequentially formed on a semiconductor substrate 11 . A first region of the entire surface is exposed using a first exposure mask 16, and the exposed photoresist film 15 is developed to form a first photoresist pattern 15'. The hard mask layer 13 is usually a double layer composed...

Claims

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