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Method for manufacturing semiconductor device

A semiconductor and plasma technology, applied in semiconductor/solid-state device manufacturing, photoengraving process of pattern surface, optics, etc., can solve problems such as total productivity decline and overall process complexity

Inactive Publication Date: 2007-07-04
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in the conventional method described above, the photoresist film, anti-reflection film, and hard mask layer must be coated and etched twice, respectively, in order to form a fine pattern
Therefore, the overall process becomes complicated, resulting in a decrease in overall productivity

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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Embodiment Construction

[0047] Disclosed herein is a method of manufacturing a semiconductor device, which includes sequentially forming an underlayer, a hard mask layer, a first antireflection film containing Si, and a first photoresist film on a semiconductor substrate. The method also includes exposing and developing the first photoresist film using a first exposure mask to form a first photoresist pattern, and etching the first photoresist film using the first photoresist pattern as a mask. An anti-reflection film, thereby forming a first anti-reflection pattern. The method also includes performing O on the first anti-reflective pattern 2 plasma treatment, followed by O 2 sequentially forming a second anti-reflection film and a second photoresist film on the plasma-treated first anti-reflection pattern, and exposing and developing alternate regions with respect to the first anti-reflection pattern using a second exposure mask , to form a second photoresist pattern. The method also includes etc...

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Abstract

Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing anti-reflection film.

Description

technical field [0001] In general terms, the present invention relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to a method of forming a pattern that can overcome resolution limitations of photolithography for fabricating semiconductor devices. Background technique [0002] Recently, a double exposure method has been performed to form fine patterns of semiconductor devices in order to overcome resolution limitations of exposure equipment. This general method is described below. [0003] Referring to FIGS. 1 a and 1 b , a bottom layer 12 , a first hard mask layer 13 , a first anti-reflection film 14 , and a first photoresist film 15 are sequentially formed on a semiconductor substrate 11 . A first region of the entire surface is exposed using a first exposure mask 16, and the exposed photoresist film 15 is developed to form a first photoresist pattern 15'. The hard mask layer 13 is usually a double layer composed...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/027G03F7/00G03F7/40
CPCG03F7/091G03F7/36G03F7/70466H01L21/0276H01L21/0338H01L21/3065H01L21/3088
Inventor 李晟求郑载昌
Owner SK HYNIX INC
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