16 results about "Directed self assembly" patented technology

Spacer self-aligned via structures for gate contact or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate. A plurality of conductive trench contact structures is alternating with the plurality of gate structures. The integrated circuit structure also includes a plurality of dielectric spacers, a corresponding one of the plurality of dielectric spacers between adjacent ones of the plurality of gate structures and the plurality of conductive trench contact structures, wherein the plurality of dielectric spacers protrudes above the plurality of gate structures and above the plurality of conductive trench contact structures. Individual ones of the plurality of dielectric spacers have an upper spacer portion on a lower spacer portion, with an interface between the upper spacer portion and the lower spacer portion.

The invention relates to the technical field of composite functions, in particular to a NiCo2O4 nanosheet array modified expanded graphite heat storage-wave absorption integrated material and a preparation method thereof. According to the invention, an EG surface functional group is innovatively used as a nucleation site, and a precursor is guided to carry out anisotropic growth and oriented self-assembly in a limited space through a hydrothermal reaction, so that a precursor with a specific morphology (rod cluster shape) is formed; and through topological conversion, the NiCo2O4 nanosheets are firmly and uniformly converted into the honeycomb NiCo2O4 nanosheet array on the EG skeleton. The in-situ growth strategy ensures that strong chemical combination and tight physical contact are formed between the functional nano material and the conductive skeleton, and skeleton-absorbent function integration is realized. And the subsequent vacuum impregnation process further realizes directional transportation and spatial confinement solidification of the phase change material in the graded pore channel through interface energy gradient and capillary acting force, and finally, precise compounding and efficient cooperation of the'heat storage-wave absorption 'dual functions on the micro-scale are completed.

A method includes forming a device layer over a substrate, the device layer comprising an upper transistor that is vertically stacked with a lower transistor; planarizing the substrate to expose a gate electrode of the lower transistor and a source / drain region of the lower transistor; and performing a directed self assembly (DSA) process to define a block of a first constituent polymer and a block of a second constituent polymer. The block of the first constituent polymer overlaps the gate electrode, and the block of the second constituent polymer overlaps the source / drain region. The method further includes replacing the block of the first constituent polymer with a dielectric material; and replacing the block of the second constituent polymer with a backside contact that is electrically connected to the source / drain region.

The present disclosure provides a method of forming a patterned structure. The method includes the following operations. A photoresist layer on a target layer is patterned to form a first opening in a patterned photoresist layer. A directed self-assembly layer is formed on the patterned photoresist layer and in the first opening, in which a directed self-assembly material in the directed self-assembly layer separates into a first phase on the patterned photoresist layer and a second phase in the first opening by the first phase being attracted by a polarity of the patterned photoresist layer. The second phase is removed to form a second opening through the directed self-assembly layer. The target layer is etched through the second opening.

The invention provides a method of forming a patterned structure. The method includes the following operations. The photoresist layer on the target layer is patterned to form a first opening in the patterned photoresist layer. A directed self-assembly layer is formed on the patterned photoresist layer and in the first opening, wherein directed self-assembly material in the directed self-assembly layer is separated into a first phase on the patterned photoresist layer and a second phase in the first opening by attraction by polarity of the patterned photoresist layer. The second phase is removed to form a second opening through the directed self-assembled layer. The target layer is etched through the second opening. According to the invention, when the photoresist material is patterned, the photoresist material can be very thin to prevent standing waves of light from staying in the photoresist material to influence the formed pattern, so that the pattern of the photoresist material can be formed as expected and transferred into the directed self-assembly material; and when the patterned photoresist material and the directed self-assembly material are used for etching the target layer, the pattern formed by the target layer can meet the expectation.

Provided herein are block copolymer (BCP) materials for nanoscale patterning and related methods. In some embodiments, the BCPs are based on polypeptoids, achieving protein-like functionality in synthetic materials for manufacturing at the nanoscale. Zero dispersity BCPs and related methods of designing and high-volume synthesis are provided.

A method of manufacturing a semiconductor device includes: disposing a bit line over a substrate; a first insulating layer is arranged above and on the side of the bit line; disposing a directed self-assembly (DSA) material layer over and laterally of the first insulating layer; a second insulating layer is arranged above the bit line, the first insulating layer and the directed self-assembly material layer and on the side of the directed self-assembly material layer; performing a phase separation operation to layer the directed self-assembly material layer into a first polymer layer and a second polymer layer, wherein the first polymer layer contacts the first insulating layer and the second insulating layer and surrounds the second polymer layer; and removing the second polymer layer to form an air gap. The semiconductor device of the present disclosure can reduce parasitic capacitance between a plurality of bit lines.

The embodiment of the invention relates to a composition for directed self-assembly and a patterning method, the composition for directed self-assembly comprises a block copolymer, a photoacid generator and a solvent, and the composition is formed by the block copolymer, the photoacid generator and the solvent. The first homopolymer and the second homopolymer which form the block copolymer are bonded through the acetal which can be cracked by acid, so that the block copolymer obtained by the reaction of the first homopolymer and the second homopolymer can realize high-efficiency decomposition under the exposure condition through the action of the photoacid generator.

Disclosed are two different block copolymer families having general structures (I) or (III), composition thereof, and the process of using these compositions for DSA; wherein B segment and B1 segment are polar block copolymer segments comprising either alkyl 2-methylenealkanoate derived repeating units, lactone derived repeat units, oxirane derived repeat units, oxetane or cyclic carbonate derived repeat units; L and L1 are either a direct valence bond or a linking moiety derived from a 1,1-diarylethene; A segment and A1 are non-polar block copolymer segment comprising styrenic repeat unit, E′, E″ E3 and E4 are different types of end groups, A2 is a block segment derived from an olefin or a diene having a Tg of about −5° C. to about −50° C., and in structure (I) is multi-tethered with oligo flexible tethered groups at various positions as outlined. E′-A-L-B-E″ (I) E3-A1-A2-L1-B1-E4 (III)

Described is a block copolymer of structure (I) comprising a first copolymer block segment A prepared by anionic polymerization, a second polymer block segments B, prepared by metal catalyzed ring opening polymerization, a linking moiety Z between said first copolymer block segment A, and said second polymer block segment B, and a first and second end groups E1 and E2. Also described is a composition comprised the copolymer of structure (I) and using said composition in lithographic processes which employ self-assembly or directed self-assembly (DSA) in the manufacture of IC devices. (I)

The application discloses a photoresist patterning method, and belongs to the field of photoetching technology. The photoresist patterning method comprises the following steps: forming an inducing structure with a plurality of grooves on a substrate, depositing a block copolymer on the inducing structure to form a block copolymer layer; inducing the block copolymer layer to directionally self-assemble to generate a first polymer region and a second polymer region; forming a second photoresist layer on the first polymer region and the second polymer region; and exposing the second photoresist layer through a mask to form a patterned photoresist layer, wherein the patterned photoresist layer is formed on the top of the second polymer region, and a bonding layer is formed between the patterned photoresist layer and the second polymer region through reaction. By introducing a BCP material with a special structure, the adaptability to a photoetching pattern is good, the adhesion between the photoresist and the substrate can be improved, and the phenomenon of photoresist inversion in a high-aspect-ratio film layer can be effectively improved.

A composition for forming a silicon-containing underlayer film, which is used for forming a self-assembled pattern, and which contains [A] a polysiloxane, [B] 0 parts by mass or more but less than 2 parts by mass of a strongly acidic additive per 100 parts by mass of the polysiloxane, and [C] a solvent, the polysiloxane contains a structural unit derived from a hydrolyzable silane (A) represented by formula (A-1). (In formula (A-1), a represents an integer of 1-3. And b represents an integer of 0-2. And a + b represents an integer of 1-3. R1 represents an organic group having a ring structure other than an aromatic hydrocarbon ring. And R2 represents a specific group. ).

The application discloses a preparation method of DNA molecular weight standards based on self-assembly, comprising the following steps: S1, two single-stranded DNAs with equal length but not complete complementarity are chemically synthesized, and each single-stranded DNA is composed of two sequences, one of which is a complementary sequence, and the other is a self-assembly complementary sequence; S2, directional self-assembly is carried out in a reaction buffer solution, and a ligase is added; S3, reaction is carried out at room temperature for 0.5-10 min, the number of self-assembly is controlled by controlling the reaction time, the number of bases added by each connection is equal to the number of bases of the single-stranded DNA, and a plurality of DNA molecular weight standards with arithmetic progression of sequence length are formed; S4, heat inactivation treatment is carried out; S5, an electrophoresis loading buffer solution is added, and the DNA molecular weight standards are prepared, and the DNA molecular weight standards are stored at low temperature. The application has the advantages of simple process, low manufacturing cost, strong expandability and the like, and has a good application prospect.

The disclosed subject matter relates to a block polymer comprising structure (1): (A)-(C)-(B), wherein (A) is a first polymer block segment comprising a block segment selected from structure (1a), structure (1b), and a mixture of structures (1a) an (1b), (C) is a spacer moiety comprising structure (1c); and wherein B) is a second polymer block segment comprising repeat units derived from either an alkyl 2-methylenealkanoate, a lactone; a cyclic carbonate, an oxirane, or an oxetane. The disclose matter also pertains to a composition of said block polymer in a spin casting solvent and using this solution in a process of directed self-assembly.

A method includes forming a device layer over a substrate, the device layer including an upper transistor vertically stacked with a lower transistor; planarizing the substrate to expose a gate electrode of the lower transistor and a source / drain region of the lower transistor; and performing a directed self-assembly (DSA) process to define a block of the first component polymer and a block of the second component polymer. The block of the first component polymer overlaps the gate electrode, and the block of the second component polymer overlaps the source / drain region. The method further includes replacing the block of the first component polymer with a dielectric material; and replacing the block of the second component polymer with a backside contact electrically connected to the source / drain region. The embodiment of the invention also relates to a semiconductor device and a forming method thereof.