2 results about "Directed self assembly" patented technology

The application discloses a photoresist patterning method, and belongs to the field of photoetching technology. The photoresist patterning method comprises the following steps: forming an inducing structure with a plurality of grooves on a substrate, depositing a block copolymer on the inducing structure to form a block copolymer layer; inducing the block copolymer layer to directionally self-assemble to generate a first polymer region and a second polymer region; forming a second photoresist layer on the first polymer region and the second polymer region; and exposing the second photoresist layer through a mask to form a patterned photoresist layer, wherein the patterned photoresist layer is formed on the top of the second polymer region, and a bonding layer is formed between the patterned photoresist layer and the second polymer region through reaction. By introducing a BCP material with a special structure, the adaptability to a photoetching pattern is good, the adhesion between the photoresist and the substrate can be improved, and the phenomenon of photoresist inversion in a high-aspect-ratio film layer can be effectively improved.