33 results about "Directed self assembly" patented technology

The invention belongs to the technical field of environmental catalytic materials and pollutant control, and particularly relates to a Ni-coated NiS < 2 >-coated MoS < x > / NF composite catalyst and a preparation method and application thereof. According to the preparation method of the Ni-coated NiS2-coated MoSx / NF composite catalyst provided by the invention, the Ni-coated NiS2-coated MoSx / NF composite catalyst with a self-supported metal / crystalline / amorphous heterojunction is constructed by virtue of a collaborative strategy of directional self-assembly and internal Ni source and water dispersion, and meanwhile, the activation efficiency of peroxymonosulfate (PMS) can be remarkably improved by combining an Ni-Mo bimetal active center, so that the activation efficiency of the Ni-coated NiS2-coated MoSx / NF composite catalyst is improved. The problems that an existing catalyst is limited in active site and poor in structural stability are solved, the excellent capacity of activating PMS to remove antibiotics is shown, therefore, efficient degradation of antibiotic pollutants is achieved, and the catalyst has wide application prospects in antibiotic wastewater treatment.

The invention discloses a self-assembly-based DNA molecular weight standard preparation method, which comprises: S1, chemically synthesizing two single-stranded DNAs having the same length but not completely complementary, and each of the two single-stranded DNAs is composed of two parts of sequences: one part is a complementary sequence, and the other part is a self-assembly complementary sequence; s2, mixing in a reaction buffer solution for directional self-assembly, and adding ligase; s3, reacting at room temperature for 0.5-10 minutes, regulating and controlling the number of self-assembly times by controlling the reaction time, and increasing the base number equal to the base number of the single-stranded DNA in each connection to form a plurality of DNA molecular weight standards with sequence lengths gradually increased in an equal difference manner; s4, carrying out thermal inactivation treatment; and S5, adding an electrophoresis loading buffer solution to prepare a DNA molecular weight standard, and storing at low temperature. The DNA molecular weight standard is rapidly prepared through the one-pot method, and the method has the advantages of being simple in process, low in manufacturing cost, high in expansibility and the like and has good application prospects.

Spacer self-aligned via structures for gate contact or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate. A plurality of conductive trench contact structures is alternating with the plurality of gate structures. The integrated circuit structure also includes a plurality of dielectric spacers, a corresponding one of the plurality of dielectric spacers between adjacent ones of the plurality of gate structures and the plurality of conductive trench contact structures, wherein the plurality of dielectric spacers protrudes above the plurality of gate structures and above the plurality of conductive trench contact structures. Individual ones of the plurality of dielectric spacers have an upper spacer portion on a lower spacer portion, with an interface between the upper spacer portion and the lower spacer portion.

Disclosed are two different groups of block copolymers having the general structure (I) or (III), compositions thereof, and methods of using these compositions in DSA; wherein the B fragment and the B1 fragment are polar block copolymer fragments comprising a 2-methylene alkanoic acid alkyl ester-derived repeat unit, a lactone-derived repeat unit, an ethylene oxide-derived repeat unit, an oxetane or cyclic carbonate-derived repeat unit; l and L1 are a direct valence bond or a linking moiety derived from 1, 1-diarylethene; fragments A and A1 are non-polar block copolymer fragments comprising styrenic repeat units, E ', E' ', E3 and E4 are different types of end groups, A2 is a block fragment derived from an olefinic hydrocarbon or diene having a Tg of from about-5 DEG C to about-50 DEG C, and in structure (I), is multi-linked by an oligomeric flexible tether group at different positions as summarized: E'-A-L-B-E ''(I) E3-A1-A2-L1-B1-E4 (III).

The invention relates to the technical field of composite functions, in particular to a NiCo2O4 nanosheet array modified expanded graphite heat storage-wave absorption integrated material and a preparation method thereof. According to the invention, an EG surface functional group is innovatively used as a nucleation site, and a precursor is guided to carry out anisotropic growth and oriented self-assembly in a limited space through a hydrothermal reaction, so that a precursor with a specific morphology (rod cluster shape) is formed; and through topological conversion, the NiCo2O4 nanosheets are firmly and uniformly converted into the honeycomb NiCo2O4 nanosheet array on the EG skeleton. The in-situ growth strategy ensures that strong chemical combination and tight physical contact are formed between the functional nano material and the conductive skeleton, and skeleton-absorbent function integration is realized. And the subsequent vacuum impregnation process further realizes directional transportation and spatial confinement solidification of the phase change material in the graded pore channel through interface energy gradient and capillary acting force, and finally, precise compounding and efficient cooperation of the'heat storage-wave absorption 'dual functions on the micro-scale are completed.

A method includes forming a device layer over a substrate, the device layer comprising an upper transistor that is vertically stacked with a lower transistor; planarizing the substrate to expose a gate electrode of the lower transistor and a source / drain region of the lower transistor; and performing a directed self assembly (DSA) process to define a block of a first constituent polymer and a block of a second constituent polymer. The block of the first constituent polymer overlaps the gate electrode, and the block of the second constituent polymer overlaps the source / drain region. The method further includes replacing the block of the first constituent polymer with a dielectric material; and replacing the block of the second constituent polymer with a backside contact that is electrically connected to the source / drain region.

The present invention relates to a composition comprising components a), b) and c). The component a) is a block copolymer or a blend of block copolymers. The component b) is a low Tg additive selected from the group consisting of an oligo random oligo random copolymer b-1), an oligo diblock copolymer b-2), an oligo diblock copolymer b-3) and a mixture of at least two of these. The component c) is a is a spin casting organic solvent. The invention also pertains to the use of said compositions in directed self-assembly. The invention further pertains to the novel oligo diblock copolymer b-2) which is an oligo diblock copolymer of block A-b) and block B-b), wherein block A-b) is a random copolymer of repeat units having structures (III), and (IV and block B-b) is a random copolymer of repeat units having structures (V), and (VI).

The present disclosure provides a method of forming a patterned structure. The method includes the following operations. A photoresist layer on a target layer is patterned to form a first opening in a patterned photoresist layer. A directed self-assembly layer is formed on the patterned photoresist layer and in the first opening, in which a directed self-assembly material in the directed self-assembly layer separates into a first phase on the patterned photoresist layer and a second phase in the first opening by the first phase being attracted by a polarity of the patterned photoresist layer. The second phase is removed to form a second opening through the directed self-assembly layer. The target layer is etched through the second opening.

The invention provides a method of forming a patterned structure. The method includes the following operations. The photoresist layer on the target layer is patterned to form a first opening in the patterned photoresist layer. A directed self-assembly layer is formed on the patterned photoresist layer and in the first opening, wherein directed self-assembly material in the directed self-assembly layer is separated into a first phase on the patterned photoresist layer and a second phase in the first opening by attraction by polarity of the patterned photoresist layer. The second phase is removed to form a second opening through the directed self-assembled layer. The target layer is etched through the second opening. According to the invention, when the photoresist material is patterned, the photoresist material can be very thin to prevent standing waves of light from staying in the photoresist material to influence the formed pattern, so that the pattern of the photoresist material can be formed as expected and transferred into the directed self-assembly material; and when the patterned photoresist material and the directed self-assembly material are used for etching the target layer, the pattern formed by the target layer can meet the expectation.

The present invention relates to a composition comprising components a), b) and c). Component a) is a block copolymer or a blend of block copolymers. Component b) is a low T copolymer selected from the group consisting of an oligomeric random copolymer b-1), an oligomeric diblock copolymer b-2), an oligomeric diblock copolymer b-3) and a mixture of at least two of these. g The invention further relates to a novel oligomeric diblock copolymer b-2), which is an oligomeric diblock copolymer of block A-b) and block B-b), wherein block A-b) is a random copolymer of repeating units of structures (III) and (IV), and block B-b) is a random copolymer of repeating units of structures (V) and (VI).

Described herein are random polymers having structure (A), the invention relates to a styrene copolymer which comprises a styrene repeating unit of a structure (I), a 4-vinyl benzocyclobutene-derived repeating unit of a structure (II), an alkyl acrylate or 2-methylene alkyl acrylate-derived repeating unit of a structure (III), a hydroxyl-substituted acrylate or 2-methylene alkyl acrylate-derived repeating unit of a structure (IV) and two terminal groups shown in a structure (A), wherein one is H and the other is a methyl moiety substituted by Rr, Rr1 and Rr2. Also described are compositions comprising the random copolymer of structure (A) and an organic spin casting solvent, as well as methods of using the compositions in directed self-assembly processes. # imgabs0 #

The invention relates to the technical field of high polymer material processing, and discloses a high-modulus low-thermal-expansion LCP (Liquid Crystal Polymer) coating film-forming process which comprises the following steps: dissolving LCP resin in an organic solvent, and adding a thermally reversible cross-linking agent and a liquid crystal additive to prepare an LCP composite solution; an automatic spin coater is adopted, the clean base material is evenly coated with the LCP composite solution, and an LCP wet film with the uniform thickness is formed; applying an external physical field during formation of an LCP wet film to guide highly-oriented self-assembly of LCP molecules and liquid crystal auxiliaries; after external field treatment, an LCP film is formed through in-situ chemical crosslinking; and coating or dropwise adding an LCP composite solution containing fluorinated acrylate in a layered manner to obtain an LCP film in gradient distribution. An external physical field is applied in the liquid crystal polymer LCP wet film forming process, LCP molecules and liquid crystal auxiliaries are effectively guided to be subjected to height directional self-assembly in the specific direction, and a stable three-dimensional network structure is constructed in the LCP film.

A method of forming a microelectronic device includes forming first trenches in a semiconductor structure having semiconductor pillars interposed therebetween, and forming first insulative structures having a second insulative structure therein in the first trenches. The method also includes forming first conductive structures adjacent first ends of the semiconductor pillars and portions of the first insulative structures, and forming masks adjacent the first conductive structures and exposed portions of the first insulative structures, an uppermost mask being a neutral layer mask used to form a polymeric mask via directed self-assembly. The method further includes forming second trenches utilizing the polymeric mask, and removing portions of the first conductive structures exposed by third trenches to form first conductive members having openings therebetween. The method also includes forming second conductive structures adjacent sidewalls of the semiconductor pillars, and forming third conductive structures adjacent second ends of the semiconductor pillars.

Provided herein are block copolymer (BCP) materials for nanoscale patterning and related methods. In some embodiments, the BCPs are based on polypeptoids, achieving protein-like functionality in synthetic materials for manufacturing at the nanoscale. Zero dispersity BCPs and related methods of designing and high-volume synthesis are provided.

The invention relates to a method of forming a microelectronic device using directed self-assembly and a related microelectronic device. A method of forming a microelectronic device includes forming a first trench in a semiconductor structure with semiconductor pillars interposed therebetween and forming a first insulating structure in the first trench having a second insulating structure. The method also includes forming a first conductive structure adjacent the first end of the semiconductor pillar and the first insulating structure portion and forming a mask adjacent the first conductive structure and the first insulating structure exposed portion, the uppermost mask being a neutral layer mask for forming a polymeric mask via directed self-assembly. The method further includes forming a second trench using the polymeric mask and removing portions of the first conductive structure exposed by the third trench to form a first conductive member having an opening therebetween. The method also includes forming a second conductive structure adjacent a sidewall of the semiconductor pillar and forming a third conductive structure adjacent a second end of the semiconductor pillar.

A method for forming a device includes blending, in a mixer within a fabrication facility, a first liquid including a first block copolymer with a second liquid including a second block copolymer to form a first mixture. The first block copolymer includes a first homopolymer and a second homopolymer, where the first homopolymer has a first mole fraction in the first liquid. The second block copolymer includes the first homopolymer and the second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction. The method includes placing a substrate over a substrate holder of a processing chamber within the fabrication facility; and coating the substrate with the first mixture within the processing chamber.

Embodiments described herein may be related to apparatuses, processes, systems, and / or techniques for creating flyover trench connectors within a transistor structure, where a first portion of the trench connector is electrically coupled with a first epitaxial structure and where a second portion of the trench connector extends above but is not electrically coupled with a second epitaxial structure. Other embodiments may be described and / or claimed.

A composition comprising components a), b) and c) wherein a) is a block copolymer component or a blend of at least two block copolymers, b) is at least one low Tg oligomer polystyrene additive, and c) is an organic spin casting organic solvent. Component b) (if more than one, alone) has a Tg in the range of about 68.0 DEG C to about 90.0 DEG C, a Mw in the range of about 2,500 g / mol to about 8,000 g / mol, a polydispersity in the range of about 1.20 to about 1.80, and is further selected from the group consisting of styrene homopolymers prepared by free radical polymerization, styrene random copolymers prepared by free radical polymerization, styrene random copolymers prepared by free radical polymerization, styrene random copolymers prepared by free radical polymerization, styrene random copolymers prepared by free radical polymerization, styrene random copolymers prepared by free radical polymerization, and styrene random copolymers prepared by free radical polymerization. The repeating units consist solely of styrene repeating units and wherein at least two styrene repeating units are present, and a mixture of the styrene homopolymer and at least one styrene random copolymer. A DSA treatment process using the composition is also described.

A method of manufacturing a semiconductor device includes: disposing a bit line over a substrate; a first insulating layer is arranged above and on the side of the bit line; disposing a directed self-assembly (DSA) material layer over and laterally of the first insulating layer; a second insulating layer is arranged above the bit line, the first insulating layer and the directed self-assembly material layer and on the side of the directed self-assembly material layer; performing a phase separation operation to layer the directed self-assembly material layer into a first polymer layer and a second polymer layer, wherein the first polymer layer contacts the first insulating layer and the second insulating layer and surrounds the second polymer layer; and removing the second polymer layer to form an air gap. The semiconductor device of the present disclosure can reduce parasitic capacitance between a plurality of bit lines.

Described herein are IC devices include tight-pitched patterned metal layers, such as metal gratings, and processes for forming such patterned metal layers. The processes include subtractive metal patterning, where portions of a metal layer are etched and replaced with an insulator to form the metal grating. Masks for etching portions of the metal layer are generated using directed self-assembly (DSA). In some examples, multiple etching steps are performed, e.g., to generate metal lines at a first pitch, and to add additional lines at half of the first pitch. In some examples, additive metal patterning is performed in addition to subtractive metal patterning.

The invention provides acrylate block polymer resin for directional self-assembly as well as a preparation method and application of the acrylate block polymer resin. The number average molecular weight of the acrylate block polymer resin is 5000 to 20000, and preferably, the number average molecular weight of the acrylate block polymer resin is 5000 to 13000; molecular weight distribution lt; 1.30, preferably from 1.0 to 1.2; the impurity content of any key metal ion in the acrylate block polymer resin is less than 5ppb; the line edge roughness of the film of the acrylate-based block polymer resin is lt; the phase region is smaller than 200 nm, preferably 10 nm, preferably 4-10 nm, and the period length of the phase region repetition structure is smaller than 200 nm, preferably 10-200 nm. The prepared acrylate block polymer resin with narrow molecular weight distribution and low metal impurity content can be used as film-forming resin in a photoresist, and the line edge roughness and phase region period length of the photoresist in a photoetching process are improved.

The embodiment of the invention relates to a composition for directed self-assembly and a patterning method, the composition for directed self-assembly comprises a block copolymer, a photoacid generator and a solvent, and the composition is formed by the block copolymer, the photoacid generator and the solvent. The first homopolymer and the second homopolymer which form the block copolymer are bonded through the acetal which can be cracked by acid, so that the block copolymer obtained by the reaction of the first homopolymer and the second homopolymer can realize high-efficiency decomposition under the exposure condition through the action of the photoacid generator.

Transistor structures between and coupled to front- and back-side interconnect layers may have precisely aligned arrays of contacts and dielectric structures over and under the transistor structures. Transistor structures may have a gate electrode thickness under a channel region one-and-a-half or two times greater than a thickness between adjacent nanoribbons in the channel region. Front- and back-side spacer layers with a same composition may have a discernible interface. Contacts and dielectric structures on a back side may be formed using directed self-assembly of sacrificial materials aligned to gate electrodes revealed on a substrate back side.

Disclosed are two different block copolymer families having general structures (I) or (III), composition thereof, and the process of using these compositions for DSA; wherein B segment and B1 segment are polar block copolymer segments comprising either alkyl 2-methylenealkanoate derived repeating units, lactone derived repeat units, oxirane derived repeat units, oxetane or cyclic carbonate derived repeat units; L and L1 are either a direct valence bond or a linking moiety derived from a 1,1-diarylethene; A segment and A1 are non-polar block copolymer segment comprising styrenic repeat unit, E′, E″ E3 and E4 are different types of end groups, A2 is a block segment derived from an olefin or a diene having a Tg of about −5° C. to about −50° C., and in structure (I) is multi-tethered with oligo flexible tethered groups at various positions as outlined. E′-A-L-B-E″ (I) E3-A1-A2-L1-B1-E4 (III)

Described is a block copolymer of structure (I) comprising a first copolymer block segment A prepared by anionic polymerization, a second polymer block segments B, prepared by metal catalyzed ring opening polymerization, a linking moiety Z between said first copolymer block segment A, and said second polymer block segment B, and a first and second end groups E1 and E2. Also described is a composition comprised the copolymer of structure (I) and using said composition in lithographic processes which employ self-assembly or directed self-assembly (DSA) in the manufacture of IC devices. (I)

The present invention relates to a composition comprising components a), b) and c). The component a) is a block copolymer or a blend of block copolymers. The component b) is a low Tg additive selected from the group consisting of an oligo random oligo random copolymer b-1), an oligo diblock copolymer b-2), an oligo diblock copolymer b-3) and a mixture of at least two of these. The component c) is a is a spin casting organic solvent. The invention also pertains to the use of said compositions in directed self-assembly. The invention further pertains to the novel oligo diblock copolymer b-2) which is an oligo diblock copolymer of block A-b) and block B-b), whereinblock A-b) is a random copolymer of repeat units having structures (III), and (IV andblock B-b) is a random copolymer of repeat units having structures (V), and (VI).

The application discloses a photoresist patterning method, and belongs to the field of photoetching technology. The photoresist patterning method comprises the following steps: forming an inducing structure with a plurality of grooves on a substrate, depositing a block copolymer on the inducing structure to form a block copolymer layer; inducing the block copolymer layer to directionally self-assemble to generate a first polymer region and a second polymer region; forming a second photoresist layer on the first polymer region and the second polymer region; and exposing the second photoresist layer through a mask to form a patterned photoresist layer, wherein the patterned photoresist layer is formed on the top of the second polymer region, and a bonding layer is formed between the patterned photoresist layer and the second polymer region through reaction. By introducing a BCP material with a special structure, the adaptability to a photoetching pattern is good, the adhesion between the photoresist and the substrate can be improved, and the phenomenon of photoresist inversion in a high-aspect-ratio film layer can be effectively improved.

A composition for forming a silicon-containing underlayer film, which is used for forming a self-assembled pattern, and which contains [A] a polysiloxane, [B] 0 parts by mass or more but less than 2 parts by mass of a strongly acidic additive per 100 parts by mass of the polysiloxane, and [C] a solvent, the polysiloxane contains a structural unit derived from a hydrolyzable silane (A) represented by formula (A-1). (In formula (A-1), a represents an integer of 1-3. And b represents an integer of 0-2. And a + b represents an integer of 1-3. R1 represents an organic group having a ring structure other than an aromatic hydrocarbon ring. And R2 represents a specific group. ).

Embodiments described herein may be related to apparatuses, processes, systems, and / or techniques for creating flyover trench connectors within a transistor structure, where a first portion of the trench connector is electrically coupled with a first epitaxial structure and where a second portion of the trench connector extends above but is not electrically coupled with a second epitaxial structure. Other embodiments may be described and / or claimed.