87results about How to "Efficient etching" patented technology

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

A self-etching, priming dental adhesive composition comprises an olefinically unsaturated monomer having an -SO3 functionality; a copolymerizable multi-functional (meth)acrylate adhesive; and a curing system. The self-etching, priming dental adhesive may further comprise a copolymerizable adhesion promoter containing an acid functionality, the adhesion promoter being different from the olefinically unsaturated monomer having an -SO3 functionality and the copolymerizable multi-functional (meth)acrylate adhesive, and a solvent system in an amount effective to dissolve the adhesive and/or the adhesion promoter. The adhesive composition provides even further advantages over the art, as all etching, priming, and application of an adhesive can be performed in one step.

The present invention provides a method for manufacturing a bonded wafer prepared by bonding a base wafer and a bond wafer, comprising at least a step of etching an oxide film in a terrace region in an outer periphery of the bonded wafer wherein the oxide film in the terrace region is etched by spin-etching with holding and spinning the bonded wafer. Thereby, there is provided a method for manufacturing a bonded wafer in which an oxide film formed in a terrace region of a base wafer is efficiently etched without removing an oxide film on the back surface of the base wafer.

The invention provides an ultrasonic surface modification treatment method for aramid fibers. One or more amidic organic solvents in any proportion are selected as an ultrasonic treatment medium; under an ultrasonic action, fiber surfaces can be etched effectively by the amidic solvents; simultaneously, the sticking points among aramid fiber filaments can be reduced, and the state of the surfaces can be improved, so that the bonding strength between a resin and a fiber is increased; and meanwhile, the online treatment of the fibers is easy to realize by the ultrasonic treatment, and the time for modifying the fiber surfaces is shortened.

Disclosed is equipment for measuring a silicon concentration in a phosphoric acid solution under use as an etching solution during operation of a semiconductor substrate processing system. The equipment is provided with at least a reaction tank and a concentration-measuring tank. The reaction tank includes a reaction unit for adding hydrofluoric acid to a predetermined constant amount of the phosphoric acid solution drawn out of the semiconductor substrate processing system to form a silicon fluoride compound and then causing the silicon fluoride compound to evaporate. The concentration-measuring tank comprises a hydrolysis unit for bubbling the silicon fluoride compound, which has evaporated from the reaction tank, through deionized water to hydrolyze the silicon fluoride compound and a measurement unit for determining a change rate of silicon concentration in the deionized water subsequent to the bubbling. Also disclosed is a method for measuring a silicon concentration in a phosphoric acid solution under recirculation and use as an etching solution in a semiconductor substrate processing system in operation.

The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less.

This invention is concerning an etchant composition used to etch a silicon-containing film formed on a target substrate. The etchant composition includes at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid.

The invention relates to an organic light-emitting display apparatus and a preparation method thereof. The preparation method comprises the steps of providing a substrate; forming a positive electrodelayer on the substrate; forming an organic light-emitting layer on the positive electrode layer; forming a negative electrode layer on the organic light-emitting layer; removing a part of the negative electrode layer and a part of the organic light-emitting layer which are corresponding to an opening in the substrate through etching by adopting a plasma bombardment mode through the opening of a mask plate; providing a cover plate with an outer layer glass material and an inner layer glass material; enabling the substrate to be laminated with the cover plate, and performing sintering on the outer layer glass material and the inner layer glass material to form an outer layer packaging layer and an inner layer packaging layer, and enabling the substrate and the cover plate to be connected ina sealing manner; and performing hole punching on the substrate and the cover plate in the inner layer packaging layer to form the organic light-emitting display apparatus with holes. By virtue of the plasma bombardment mode, more efficient organic material etching can be realized, and higher production efficiency and higher etching precision are achieved; and in addition, scalding to a pixel region can be avoided, the etching cost can be lower and the production cost can be lowered effectively.

The invention discloses a plasma etching method of an insulating layer containing silicon, comprising an etching step and a side wall passivation step which are mutually independent, wherein the etching step and the wall passivation step are alternated and recycled in the etching process until the target depth is obtained by etching. The etching step comprises: etching gas is provided to etch an insulating material layer containing silicon under the action of plasma to a certain depth so as to expose one etching interface, wherein the etching interface comprises a side wall; and the side wall passivation step comprises: reaction gas containing carbon and hydrogen is provided, polymer containing carbon and hydrogen is formed on the side wall of the etching interface under the action of plasma and is deposited or attached to the side wall surface of the etching interface. The etching method of the invention quickly etches the insulating layer containing silicon and protects the side wall, obtains better appearance outline and solves the problems that the arc-shaped side wall and critical dimension when channels or through holes are etched in the prior art are offset.

The invention provides a nano enzyme with a nanometer cage core of a hollow gold-platinum alloy and a shell of a porous silicon dioxide, a preparation method and an application thereof, and belongs tothe field of nanometer materials. The preparation method comprises the following steps: etching a gold core platinum shell nanostructure through potassium hexachloroplatinate to obtain a nanocage ofhollow gold-platinum alloy; coating silicon dioxide on the surface of the nanocage through tetraethyl silicate; and obtaining the nano enzyme taking the nanometer cage, in a round rod shape, of the hollow gold-platinum alloy as a core, and a silicon dioxide shell as the periphery of the core. The length of the core is 80 to 100 nm, and the diameter is 20 to 25 nm. The shell is provided with a channel of 3 to 5 nm. The nano enzyme is negatively charged. The antigen can be bound by an attractive effect of positive and negative electric charges to form a nano enzyme label antigen complex, which is used for performing enzyme linked immunoassay. According to the nano enzyme with the nanometer cage core of the hollow gold-platinum alloy and the shell of the porous silicon dioxide, the preparation method and the application thereof, the cost of a reagent of the natural enzyme label antigen complex is reduced, the working environment of enzyme linked immunodetection is extended, the defects that the natural enzyme is easy to deactivate and denature, etc., are overcame, and the nano enzyme can be widely applied to various enzyme linked immunodetection.

The invention discloses a glass surface nanofabrication method based on friction-induced selective etching, which is mainly applied in the processing of the glass surface micro-nanostructure. The specific operation method comprises the following steps of: installing a probe of which the tip is spherical on an atomic force microscope, fixing the cleaned glass on a sample stage, starting the atomic force microscope, applying a constant load F or a variable load F' on the probe, using the probe to scan on the glass surface along a set scanning track according to the cycle number N and the scanning speed v; and after scanning, placing the glass in an HF solution of which mass concentration is 10-20%, and finally corroding for 5-10 seconds. The method does not require a template or mask, three-dimensional nano-patterns such as slopes, steps and arrays are processed on the glass surface through one-time corrosion; and the processing flow is extremely simple, the corrosion rate is extremely high, and the glass surface nanofabrication method is simple, accurate and efficient.