15results about How to "Improve etching efficiency" patented technology

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

The application provides a tungsten via hole manufacturing method, which comprises the following steps: providing an equipment comprising a first cavity and a second cavity connected by a vacuum transmission channel, and a cooling device is arranged in the vacuum transmission channel; placing a substrate with a via hole on the surface into the first cavity; introducing a first gas into the first cavity to deposit a tungsten film layer, so as to obtain an intermediate structure comprising the substrate and the tungsten film layer, and the tungsten film layer covers the surface of the substrate and fills into the via hole; pumping the first cavity, the vacuum transmission channel and the second cavity to the same preset vacuum degree; transmitting the intermediate structure into the second cavity through the vacuum transmission channel; introducing a second gas into the second cavity to etch and remove the tungsten film layer outside the via hole, so as to form a tungsten via hole; breaking the vacuum and taking out the substrate with the tungsten via hole from the equipment. The tungsten via hole manufacturing method can effectively improve the etching efficiency of tungsten, reduce the risk of defects and improve the yield of chips.

This utility model relates to a liquid level fluctuation prevention structure in a chain cleaning device used in solar cell production. The chain cleaning device includes an acid washing tank II and an alkaline washing tank II. Multiple rollers are arranged at the liquid surface of the acid washing tank / alkaline washing tank, with the lower part of the rollers immersed in the liquid. Multiple partition chambers are spaced apart within the acid washing tank II / alkaline washing tank II, with the upper end of each partition chamber higher than the liquid surface. The upper end of each partition chamber is open, and the upper cavity of each partition chamber is further divided into multiple smaller cavities, which are connected to the acid washing tank II / alkaline washing tank II via the lower part of the partition chamber. Liquid level fluctuations caused by roller rotation are partially offset by the partition chambers. Small liquid droplets splashed during roller rotation fall into the smaller cavities and eventually flow back into the acid washing tank II / alkaline washing tank II. The beneficial effect achieved by this utility model is that it improves the uniformity of etching each solar panel while ensuring efficiency.

A method for manufacturing a package substrate includes providing a substrate structure including a board body, a metal layer formed on the board body, a first wiring layer formed on the metal layer, and a conductive pillar formed on the first wiring layer. Then, a molten glass is formed on the metal layer to cover the first wiring layer and the conductive pillar, and the molten glass is solidified to form a core board. After that, the board body is removed, and a groove is formed on the core board to form a second wiring layer in the groove. Finally, the metal layer is soaked in an etching solution to remove the metal layer. Thus, the metal layer is removed by using the soaking etching method with the glass-made core board, and the side etching phenomenon can be avoided.

The invention discloses a laser marking system, a marking method and a gallium nitride wafer structure, the marking system comprises a laser module, a focusing module and a control module, and the laser module is used for outputting light towards the back surface of the wafer structure; the focusing module is arranged between the wafer structure and the laser module and is used for focusing the light output by the laser module to obtain a focused light spot; the control module is used for controlling one or more of the wafer structure, the laser module and the focusing module to move according to a preset pattern so as to control and adjust the relative position of the wafer structure and the focusing light spot, so that the focusing light spot moves in the wafer structure according to the preset pattern and is etched, and an identification pattern is formed in the semiconductor wafer substrate; wherein the target distance between the end face, close to the back face, of the identification pattern and the back face is larger than the thinning thickness of the semiconductor wafer substrate from the back face. According to the invention, the formed identification pattern is not damaged and influenced by thinning treatment from the back surface.

This application relates to the field of etching apparatus technology, and more particularly to a carrier plate etching method and apparatus. The technical solution includes a conveying device and a spray system mounted above it. The spray system comprises multiple sets of local spray modules arranged sequentially along the carrier plate's movement direction. Each module includes a mounting box, a sealing mechanism located on both sides of the mounting box and forming a seal on the carrier plate surface, multiple etching nozzles, a flow guiding nozzle, and a recovery mechanism. The sealing mechanism defines a sealed etching area between the mounting box and the carrier plate. The flow guiding nozzle blows airflow towards the other side of this area, causing the etching solution to flow in a directional direction. The recovery mechanism then recovers the etching solution flowing to that side. This apparatus decomposes large-area spraying into multiple independent and controllable local etching segments, preventing uneven etching caused by irregular lateral diffusion and concentration decay of the etching solution. It also improves the etching solution exchange rate and etching efficiency, and enables timely recovery of waste liquid, reducing pollution and consumption.

The invention discloses a method for preparing MXene through fluoride-free etching of an ultrasonic-assisted supercritical carbon dioxide flash explosion technology, and relates to the field of MXene preparation, MXene is prepared through a one-pot method by utilizing the synergistic effect of a high-frequency power ultrasonic technology, a flash explosion technology and a supercritical carbon dioxide fluid medium, and the MXene is prepared through a high-frequency power ultrasonic technology, a flash explosion technology and a supercritical carbon dioxide fluid medium. Putting the fluoride-free etching agent and the MAX phase into a supercritical reaction kettle; introducing carbon dioxide to enable the carbon dioxide to reach a supercritical state, and applying continuous or discontinuous high-frequency power ultrasonic treatment to carry out supercritical state etching reaction; after the reaction is finished, carrying out instantaneous supercritical flash explosion treatment; releasing the pressure of the flash explosion area and the buffer area, collecting the product, centrifuging, washing and drying to obtain an MXene product; according to the method, the production of fluorine-containing waste liquid is avoided, the etching efficiency and the product yield are remarkably improved by virtue of high permeability and mass transfer characteristics of supercritical carbon dioxide, and a new way is provided for large-scale preparation of various MXene materials.

This invention provides a highly selective Ag-Al composite etching solution composition, relating to the field of metal film etching technology. The highly selective Ag-Al composite etching solution composition comprises phosphoric acid, sulfuric acid, potassium hydrogen sulfate, ammonium sulfate, 1-hydroxybenzotriazole, 3-amino-1,2,4-triazole, dimethyl dithiophosphate, and an organic alcohol. This invention overcomes the shortcomings of existing technologies, effectively etching Al while causing almost no erosion of Ag, effectively preventing the problem of over-etching Ag in traditional processes.

This invention relates to a method, equipment, apparatus, system, and production line for processing blind vias in multilayer glass substrates. The method includes: controlling a first laser focusing spot to enter and focus inside the glass layer from a predetermined position on the upper surface of the glass layer, thereby modifying or micro-exploding the glass layer to form loose blind vias; chemically etching the multilayer glass substrate with the loose blind vias to form second blind vias; and controlling a second laser cleaning spot to laser-process the insulating layer at the bottom of the second blind vias to form third blind vias. This invention uses a first laser focusing spot to process loose blind vias on the glass layer, making the glass in this area porous, increasing the contact area with the chemical etching solution, and thus accelerating the etching speed. Simultaneously, the first laser focusing spot modifies or micro-explodes the glass layer, and the glass within the loose blind vias is annealed by heat, further improving the etching efficiency.

The utility model discloses a medium window heating mechanism of etching equipment and etching equipment, including casing and the medium window arranged in the casing, the casing is provided with at least one heating assembly, the heating assembly comprises an airflow amplifier connected with a compressed air source, the suction end of the airflow amplifier is communicated with the inner cavity of the casing, and the suction end of the airflow amplifier is communicated with the inner cavity of the casing. The exhaust end of the airflow amplifier is connected with the air inlet end of the heating pipe through a pipeline, and the air outlet end of the heating pipe is communicated with the inner cavity of the machine shell. According to the utility model, the temperature rise of the medium window can be assisted, the invalid standby time caused by temperature rise can be reduced, the running time loss of a machine can be reduced, and the etching efficiency can be improved.

The utility model discloses an etching device for processing a semiconductor lead frame, and relates to the technical field of semiconductor manufacturing, a plurality of positioning plates are respectively and fixedly arranged on a belt of a belt conveyor, and four sides of the plurality of positioning plates are respectively provided with grooves; the abutting rods are fixedly arranged at the four corners of the positioning plate respectively. The multiple movable plates are arranged on the four sides of the positioning plate through connecting assemblies respectively, the movable plates are movably clamped in the grooves, and the two sides of each movable plate abut against the corresponding abutting rods in a matched mode; the fixing frames are fixedly arranged on a support of the belt conveyor, vertical rods on the front side and the rear side of each fixing frame are located on the front side and the rear side of the belt conveyor, and spray heads are arranged on transverse rods of the fixing frames and connected with an external water source. The etching liquid can be conveniently stored on the positioning plate through the abutting rod and the movable plate, so that the lead frame is soaked in the etching liquid, the lead frame is uniformly etched, and the etching efficiency is improved.

A method for removing a low-dielectric-constant material layer includes: providing a wafer to be cleaned, the surface of which has a low-dielectric-constant material layer; dry etching the wafer using oxygen plasma to reduce the methyl content in the low-dielectric-constant material layer; performing a first isotropic etching on the wafer for a first duration using an etching solution of a first concentration; and performing a second isotropic etching on the wafer for a second duration using the etching solution of a second concentration; wherein the second concentration is less than the first concentration, and the second duration is less than the first duration. This method can quickly and effectively remove the low-dielectric-constant material layer from the wafer surface and significantly reduce the number of particles on the cleaned wafer surface, making the wafer suitable for reuse, thereby improving efficiency and reducing costs.

The invention discloses a method for forming a SiN deep hole structure, which comprises the following steps: a substrate is placed in a vacuum reaction cavity, and the substrate comprises a substrate and a SiN dielectric layer arranged on the substrate; etching gas is introduced into the vacuum reaction cavity, wherein the etching gas at least comprises CxHyFz gas and oxygen-containing gas; wherein x is larger than or equal to 0 and smaller than 5, y is larger than or equal to 0, z is larger than or equal to 0, y and z are not 0 at the same time, and at least one etching gas with y larger than 0 is included; applying source radio frequency power, and dissociating the etching gas to form etching gas plasma; and applying bias radio frequency power: alternately applying first bias radio frequency power and second bias radio frequency power, and etching the SiN dielectric layer of the substrate to form a SiN deep hole structure, the first bias radio frequency power is greater than the second bias radio frequency power. According to the method, bias radio frequency power and specific etching gas are applied in a high-low power switching mode to etch the SiN dielectric layer, and the deep hole structure with the vertical side wall contour can be rapidly obtained.

The invention relates to a preparation method of a semiconductor structure and the semiconductor structure. The method comprises the following steps: providing a substrate, and forming a metal layer on the substrate; sequentially forming an insulating layer and a photoresist layer on the metal layer; removing a part of the photoresist layer to expose a part of the top surface of the insulating layer; processing the insulating layer by adopting a preset modification process based on a preset modification element so as to form a modified layer in the insulating layer; the photoresist layer is removed and a dielectric layer is formed on the insulating layer. According to the preparation method of the semiconductor structure, the photoresist layer is formed on the insulating layer, part of the photoresist layer is removed, part of the top surface of the insulating layer is exposed, the insulating layer is treated by adopting the preset modification process based on the preset modification elements, so that the modified layer is formed in the insulating layer, and modification treatment on the insulating layer is realized. The etching efficiency of the modified layer in the insulating layer can be remarkably improved, so that the local over-etching phenomenon of the insulating layer is effectively avoided, the subsequent metal layer is ensured to be in good contact, and the product yield is improved.