48results about How to "Improve etching efficiency" patented technology

The invention belongs to the technical field of photovoltaic wet etching, and particularly relates to a low-concentration hydrofluoric acid composite etching solution and a preparation method and an etching process thereof, and the low-concentration hydrofluoric acid composite etching solution comprises the following components in percentage by mass: 5%-10% of hydrofluoric acid, 2%-5% of an etching additive and the balance of water; wherein the etching additive comprises the following components in percentage by mass: 8%-25% of a strong oxidant, 2%-5% of an etching accelerant, 0.5%-2% of an interface modification and mass transfer accelerant, 0.1%-3% of a product control and stabilizer, 0.1%-2% of an equipment compatible corrosion inhibitor and the balance of water; the strong oxidant is used for oxidizing silicon nitride to form a silicon oxynitride transition layer, the etching accelerant is used for providing HF molecules and HF2-ions, and the product control and stabilizing agent is used for complexing SiF62-ions generated by etching.

The invention provides laser etching equipment for a pole piece, which comprises an unwinding part and an etching part, and the etching part is positioned at the downstream of the unwinding part and is used for etching a pole piece material belt from the unwinding part; the etching part comprises at least two etching units corresponding to the two side surfaces of the pole piece material belt, the etching part further comprises a deviation rectifying assembly, the etching units used for processing the first side surface of the pole piece material belt are defined as a first etching group, and the etching units used for processing the second side surface of the pole piece material belt are defined as a second etching group; the upstream of the first etching group and the upstream of the second etching group are respectively provided with a deviation rectifying assembly. The two side faces of the pole piece material belt can be subjected to laser etching machining at the same time, meanwhile, before the pole piece material belt enters the first etching set and the second etching set, deviation correction is conducted on the pole piece material belt through the deviation correction assembly, the conveying speed of the pole piece material belt can be increased, and the etching efficiency of the pole piece material belt is improved on the whole.

The invention discloses full-automatic polishing and etching equipment, and relates to the technical field of automatic glass etching equipment. Comprising a feeding station, a first cleaning station, an alkali polishing station, a second cleaning station and a discharging station which are sequentially distributed in the first direction. Each of the first cleaning station, the alkali polishing station and the second cleaning station comprises a plurality of functional tanks; the plurality of functional tanks are all provided with bubbling assemblies and liquid circulation assemblies, and a throwing mechanism is arranged in the functional tank of the alkali polishing station; the glass basket is used for loading glass; the transferring assembly is used for driving the glass to move along a first direction and a vertical direction; the glass basket comprises two side plates, limiting rods and a first connecting rod, the limiting rods and the first connecting rod are arranged between the two side plates, the two sides of the glass are limited between the limiting rods, the bottom of the glass abuts against the first connecting rod, and a plurality of limiting grooves are distributed in the limiting rods in the second direction; according to the technical scheme provided by the invention, the etching efficiency and the etching quality of the glass can be effectively improved.

The invention belongs to the technical field of dry etching, and particularly relates to dry etching equipment for silicon wafers and a method thereof.The dry etching equipment comprises a support and placement assemblies used for bearing the silicon wafers and further comprises a bearing plate, and the placement assemblies are arranged at the two ends of the top of the bearing plate; the rotating assembly is used for driving the bearing plate to rotate, and the rotating assembly is arranged at the bottom end of the support; and the annular grooves are formed in the two ends of the bearing plate correspondingly, and the placing assemblies are located on the inner sides of the annular grooves. The placing assemblies are arranged at the two ends of the top of the bearing plate, and the vacuum assembly used for extracting air in the sealing cover and the etching assembly used for etching the silicon wafers are arranged, so that when one group of silicon wafers is etched, the other group of silicon wafers can be subjected to feeding, discharging and vacuumizing operation, and the efficiency is improved. And the silicon wafer can be continuously etched to a certain extent, so that the etching efficiency of the silicon wafer can be improved.

This invention relates to the field of vapor phase etching (VPE) apparatus technology, specifically a double-sided VPE apparatus for semiconductor silicon wafers. The apparatus includes a VPE apparatus body, a silicon wafer transfer mechanism at the upper end of the apparatus body, an etching chamber fixedly mounted on the outer side of the apparatus body, and a mounting base fixedly mounted on the upper end of the etching chamber. By combining the VPE mechanism with a central air-guiding mechanism, stable adsorption of the semiconductor silicon wafer is ensured during the etching process, avoiding vibration and improving etching efficiency and precision. A Bernoulli-style chuck structure is formed by the cooperation of the air-guiding support stage and the central stage, stably "fixing" the silicon wafer above the air-guiding support stage, minimizing contact with the semiconductor silicon wafer, avoiding physical damage and contamination, and simultaneously enabling multi-directional airflow distribution to meet auxiliary heat dissipation needs for the semiconductor silicon wafer, further improving the accuracy and etching efficiency of the VPE process.

The application provides a tungsten via hole manufacturing method, which comprises the following steps: providing an equipment comprising a first cavity and a second cavity connected by a vacuum transmission channel, and a cooling device is arranged in the vacuum transmission channel; placing a substrate with a via hole on the surface into the first cavity; introducing a first gas into the first cavity to deposit a tungsten film layer, so as to obtain an intermediate structure comprising the substrate and the tungsten film layer, and the tungsten film layer covers the surface of the substrate and fills into the via hole; pumping the first cavity, the vacuum transmission channel and the second cavity to the same preset vacuum degree; transmitting the intermediate structure into the second cavity through the vacuum transmission channel; introducing a second gas into the second cavity to etch and remove the tungsten film layer outside the via hole, so as to form a tungsten via hole; breaking the vacuum and taking out the substrate with the tungsten via hole from the equipment. The tungsten via hole manufacturing method can effectively improve the etching efficiency of tungsten, reduce the risk of defects and improve the yield of chips.

The invention relates to the technical field of printed circuit board fine circuit preparation, in particular to a method for preparing a PCB fine circuit through efficient pulse electrolytic chemical synergy etching, according to the method for preparing the PCB fine circuit through etching, high pulse peak current density is generated through one-way pulse current, use of reverse pulse current is avoided, and the circuit quality is improved. And meanwhile, the current control is simplified. Moreover, through the synergistic effect of the high pulse peak current density and the limited duty ratio, under the high pulse peak current density, the electrolytic etching speed can be increased, the electrolytic etching time can be greatly shortened, the corrosion effect of chemical etching on the circuit is relatively weakened, and the side corrosion of the circuit is small. Due to the fact that the electrolytic etching speed is high, the electrolytic etching time is short, electrolytic etching is used as a leading part, and chemical etching is used as a supplement part, a corrosion inhibitor does not need to be used in the electrolytic etching solution, and the method has the advantages of being simple in process, low in preparation cost, high in etching speed, good in etching uniformity, high in production efficiency and good in circuit quality and reliability.

This utility model relates to a liquid level fluctuation prevention structure in a chain cleaning device used in solar cell production. The chain cleaning device includes an acid washing tank II and an alkaline washing tank II. Multiple rollers are arranged at the liquid surface of the acid washing tank / alkaline washing tank, with the lower part of the rollers immersed in the liquid. Multiple partition chambers are spaced apart within the acid washing tank II / alkaline washing tank II, with the upper end of each partition chamber higher than the liquid surface. The upper end of each partition chamber is open, and the upper cavity of each partition chamber is further divided into multiple smaller cavities, which are connected to the acid washing tank II / alkaline washing tank II via the lower part of the partition chamber. Liquid level fluctuations caused by roller rotation are partially offset by the partition chambers. Small liquid droplets splashed during roller rotation fall into the smaller cavities and eventually flow back into the acid washing tank II / alkaline washing tank II. The beneficial effect achieved by this utility model is that it improves the uniformity of etching each solar panel while ensuring efficiency.

The invention discloses an etching device and method applied to semiconductor chip production, and relates to the related technical field of chip production. The etching device comprises a base, an etching box is arranged at the top of the base, a photoresist assembly is arranged on the left side of the etching box, a plurality of obliquely-distributed injection holes are formed in the right side of the photoresist assembly, a plurality of limiting rods are symmetrically arranged on the outer wall of the etching box, sealing plates are arranged on the outer walls of the limiting rods, and telescopic rods are arranged at the corners of the bottom of the inner wall of the etching box. According to the invention, after the photoresist and the etching liquid are mixed, the photoetching resolution in the chip etching process is improved, so that the etching definition of the semiconductor chip is improved, the etching quality is improved, meanwhile, in the continuous movement process of the U-shaped pipe assembly, the upper and lower pressure difference of the etching liquid on the right side in the etching box is effectively changed, the time required for comprehensive etching of the chip is shortened, and the etching efficiency is improved. And the etching efficiency is improved.

The invention relates to the technical field of etching liquid treatment, in particular to a PCB acid etching waste liquid cyclic regeneration process and equipment, the PCB acid etching waste liquid cyclic regeneration process comprises the working procedures of etching, electrolysis, filtration, mixing, chlorine gas absorption, air floatation and regeneration, and a filter membrane in the filtration working procedure comprises a PES membrane, a PS membrane or an SPS membrane. Chlorine absorbed in the chlorine absorption process is conveyed on an electrolysis line in a jet mode, and gas blown in the air flotation process is air, oxygen or nitrogen; through the procedures, a light agent and impurities are effectively filtered out, chlorine gas micro bubbles are completely discharged while chlorine gas fully reacts, the problems of poor etching efficiency and poor etching quality caused by a diaphragm electrolysis process in the prior art are solved, and meanwhile, the risk of chlorine gas leakage and energy consumption are reduced; the relevance between an etching line and an electrolytic line is further reduced; and the recycling efficiency of chlorine and regenerated liquid reaches 70-90%.

The invention relates to a method for roughening the surface of a glass substrate in the field of glass substrates, which comprises the following steps: soaking a washed glass substrate in a first KOH solution soaking tank for pre-roughening treatment, so that the surface roughness of the glass substrate can be preliminarily adjusted, and the glass substrate is easier to accept subsequent secondary roughening treatment; putting the glass substrate subjected to primary soaking roughening into a second KOH solution soaking tank for secondary roughening treatment, performing uniform diffusion treatment on a KOH solution in the second KOH solution soaking tank by adopting an ultrasonic generator, and meanwhile, stirring the KOH solution by virtue of a stirring device, the KOH solution in the second KOH solution soaking tank can uniformly etch the glass substrate, the glass substrate roughening etching efficiency and quality are improved, the ultrasonic generator is adjusted by monitoring the size distribution of cavitation bubbles in the KOH solution in the second KOH solution soaking tank and the concentration of silicon ions in real time, the treatment process is optimized, and the glass substrate roughening quality is improved. And the roughening efficiency and quality are enhanced.

The utility model discloses double-sided etching equipment for a high-precision metal mask plate, and belongs to the field of mask plate etching. A high-precision metal mask plate double-face etching device comprises a box body with the upper portion and the lower portion opened, the lower end of the box body is communicated with a storage box, a mounting frame is arranged in the box body, a fixing plate is fixed to the mounting frame, a sliding plate capable of being adjusted in a sliding mode is further arranged, and the two ends of a mask plate are fixed to the fixing plate and the sliding plate in an adhesive mode respectively; rotating shafts which are coaxial with each other are arranged at the two ends of the mounting frame respectively, and the rotating shafts are rotatably mounted on the box body; the spraying pipes are arranged on the two opposite sides of the box body respectively, the spraying pipes on the two sides can spray etching liquid to the two sides of the mask plate, double-face etching is achieved, and compared with single-face etching in the prior art, the etching efficiency is improved.

A method for manufacturing a package substrate includes providing a substrate structure including a board body, a metal layer formed on the board body, a first wiring layer formed on the metal layer, and a conductive pillar formed on the first wiring layer. Then, a molten glass is formed on the metal layer to cover the first wiring layer and the conductive pillar, and the molten glass is solidified to form a core board. After that, the board body is removed, and a groove is formed on the core board to form a second wiring layer in the groove. Finally, the metal layer is soaked in an etching solution to remove the metal layer. Thus, the metal layer is removed by using the soaking etching method with the glass-made core board, and the side etching phenomenon can be avoided.

The utility model discloses computer mainboard etching equipment, which is applied to the field of computer mainboard etching, and is characterized in that a rod body I, a rod body II, a rod body III and a rod body IV which penetrate to the top of a shell are respectively and rotatably connected to the inside of the shell through bearings, so that when a computer mainboard is etched, the rod body I, the rod body II, the rod body III and the rod body IV are not damaged; mainboards are manually hung on the hooks through the feeding port, in the operation process of the rotating motor, the main boards on the hooks are conveyed through the belt, then the spraying head is aligned with the main boards hung on the hooks to conduct spraying, the sprayed main boards are conveyed to the discharging port through the belt, and at the moment, the main boards exposed out of the discharging port are manually discharged; by means of the link, the hooks can be circularly fed and used, the hooks discharged through the discharging port are conveyed to the feeding port again through the rotating motor and the belt so as to be fed in the next cycle, and by means of the equipment for circularly feeding and discharging, the etching efficiency of the computer mainboard is improved, and the production efficiency of enterprises is improved.

The invention discloses a laser marking system, a marking method and a gallium nitride wafer structure, the marking system comprises a laser module, a focusing module and a control module, and the laser module is used for outputting light towards the back surface of the wafer structure; the focusing module is arranged between the wafer structure and the laser module and is used for focusing the light output by the laser module to obtain a focused light spot; the control module is used for controlling one or more of the wafer structure, the laser module and the focusing module to move according to a preset pattern so as to control and adjust the relative position of the wafer structure and the focusing light spot, so that the focusing light spot moves in the wafer structure according to the preset pattern and is etched, and an identification pattern is formed in the semiconductor wafer substrate; wherein the target distance between the end face, close to the back face, of the identification pattern and the back face is larger than the thinning thickness of the semiconductor wafer substrate from the back face. According to the invention, the formed identification pattern is not damaged and influenced by thinning treatment from the back surface.

An energy-saving and environment-friendly vacuum etching device comprises a machining table, an upper frame, a bearing assembly, a vacuum assembly and a spraying etching assembly, a machining groove with an opening in the upper end is formed in the machining table, the upper frame stands on the machining table and is located above the machining groove, the bearing assembly is arranged in the machining groove, and the spraying etching assembly is arranged in the machining groove. The vacuum assembly is arranged on the upper frame and located above the bearing assembly. The spraying and etching assembly is arranged at the lower end of the vacuum assembly. The bearing assembly comprises a motor, a rotating shaft and a bearing plate. According to the utility model, the circuit board in etching processing is driven to rotate by designing the bearing assembly capable of moving and rotating, the water pit effect in the etching process is weakened and even eliminated by centrifugal force generated by the rotation of the circuit board, and compared with the traditional vacuum suction operation, more work is saved, so that the purposes of energy conservation and environmental protection of the etching device are achieved; the utility model has the advantages of strong practicability and strong popularization significance.

This application relates to the field of etching apparatus technology, and more particularly to a carrier plate etching method and apparatus. The technical solution includes a conveying device and a spray system mounted above it. The spray system comprises multiple sets of local spray modules arranged sequentially along the carrier plate's movement direction. Each module includes a mounting box, a sealing mechanism located on both sides of the mounting box and forming a seal on the carrier plate surface, multiple etching nozzles, a flow guiding nozzle, and a recovery mechanism. The sealing mechanism defines a sealed etching area between the mounting box and the carrier plate. The flow guiding nozzle blows airflow towards the other side of this area, causing the etching solution to flow in a directional direction. The recovery mechanism then recovers the etching solution flowing to that side. This apparatus decomposes large-area spraying into multiple independent and controllable local etching segments, preventing uneven etching caused by irregular lateral diffusion and concentration decay of the etching solution. It also improves the etching solution exchange rate and etching efficiency, and enables timely recovery of waste liquid, reducing pollution and consumption.

The application discloses an etching method and a plasma etching device. The etching method comprises the following steps: providing a reaction cavity, and placing a substrate in the reaction cavity; etching the substrate at 0 DEG C or below; and raising the temperature of the substrate to 60 DEG C or above, so that by-products deposited on the substrate are discharged in a gaseous form. The etching step and the temperature raising step are alternately performed. After the etching is performed for a period of time, the temperature of the substrate is raised to 60 DEG C or above, so that the by-products originally adhered to the substrate are discharged from the substrate, thereby improving the etching efficiency. The etching step and the temperature raising step are alternately and cyclically performed, so that the etching speed of each etching step can be maintained faster, and the advantages of low-temperature etching can be fully exerted.

A method for improving etching paste process efficiency specifically comprises the following steps: S1, preparation work in advance: cutting and forming a glass substrate to ensure that the size is accurate, the edge is not scorched or yellowed, the cutting depth of ITO glass is proper, and no flash or burr exists; s2, coating etching paste: uniformly coating the strippable etching paste on a screen printing plate at a certain angle (such as 75 degrees) through a scraper; s3, carrying out screen printing on the etching paste: carrying out screen printing on the etching paste on the glass by adopting a screen printing method; s4, heating the substrate: heating the substrate with 40-50 DEG C and carrying out screen printing on etching paste; S5, detecting, adjusting and cleaning; and S6, quality detection. According to the method for improving the efficiency of the etching paste process, after the etching paste is printed on a product in a silk-screen mode, the substrate is heated at the temperature of 40-50 DEG C to be etched, so that the etching efficiency is improved, the substrate can be completely etched within 200 seconds, and the production efficiency and the takt are greatly improved.

The present invention discloses a cathode etching device and method for display screens, and belongs to the technical field of cathode etching for display screens. It includes a cathode etcher, a vacuum pump, a laser processing mechanism, a lifting unit and a translation driving component; the cathode etcher is provided with a feed port and a working window, and the interior thereof is a cathode etching chamber; a support is provided in the cathode etching chamber, and the support is used to support the display screen; the vacuum pump is connected to the cathode etcher, and is used to evacuate the cathode etching chamber; the laser processing mechanism is arranged corresponding to the working window, and is used to emit laser to etch the display screen; the lifting unit is arranged below the support and is connected thereto; the translation driving component is connected to the support by transmission, and the translation driving component is used to drive the support to drive the display screen to translate between the feed port and the working window. The present invention can safely transport and efficiently process the display screen, thereby effectively improving the light transmittance of the display screen and the image quality of the camera.

The present application discloses a multiple magnetic field etching device, comprising a working chamber, a carrier, a coil, a first magnetic group and at least two layers of a second magnetic group, wherein the first magnetic group and the second magnetic group both comprise a plurality of permanent magnets spaced apart in a circumferential direction; the coil is used as an excitation magnetic field, the first magnetic group is used as a confinement magnetic field, and the second magnetic group is used as an enhancement magnetic field; the excitation magnetic field promotes plasma generation, the confinement magnetic field confines electrons around the coil, making it easier for electrons to ionize gas atoms and preventing electrons from being drawn away by the chamber wall, and the enhancement magnetic field can increase the activity of plasma near a wafer and accelerate wafer etching; the etching device provided by the present application can conveniently and effectively improve the etching efficiency and ensure the etching effect through the coordination of the triple magnetic fields.

The embodiment of the utility model provides a silicon carbide etching device, and relates to the technical field of silicon carbide etching equipment. The silicon carbide etching device comprises an etching furnace and a transportation piece. A heating area is arranged in the etching furnace, the heating area is sequentially divided into a preheating area, an etching area and a cooling area, the temperature from the preheating area to the etching area is gradually increased, the temperature from the etching area to the cooling area is gradually reduced, the etching area is a constant-temperature area, and the transportation part is arranged in the etching furnace and sequentially passes through the preheating area, the etching area and the cooling area. In the etching process of the silicon carbide wafer, under the action of the transportation piece, the etching furnace can take out the etching box filled with the silicon carbide wafer after etching without cooling the whole etching furnace, and in the etching process of the silicon carbide wafer each time, the etching furnace does not need to be repeatedly heated and cooled, so that the etching efficiency is improved. And the silicon carbide wafer can pass through the hot area, the etching area and the cooling area in sequence under the action of the transportation piece, so that the etching efficiency of the silicon carbide wafer can be improved.

The present invention discloses a method for making an X-shaped through hole in a glass substrate, and belongs to the field of making through holes in semiconductor devices. A method for making an X-shaped through hole in a glass substrate comprises: S1, making an aluminum mask in the graphic area on the front and back sides of the glass substrate, and exposing the position where the hole needs to be opened on the glass substrate; S2, setting the RF electrode power, etching time, vacuum pressure, and total flow rate of the mixed gas of the plasma etching equipment, and setting the mixing ratio of C4F8, N2, and O2 in the mixed gas; S3, heating the glass substrate by using the plasma etching equipment; S4, etching the front and back sides of the glass substrate simultaneously by using the plasma etching equipment; S5, actively recovering and treating the generated waste gas by using the plasma etching equipment. Using the plasma etching equipment to etch the front and back sides of the glass substrate simultaneously is conducive to the stability of the hole type, simplifies the process flow, improves the etching efficiency, and reduces the cost.

The invention discloses a method for preparing MXene through fluoride-free etching of an ultrasonic-assisted supercritical carbon dioxide flash explosion technology, and relates to the field of MXene preparation, MXene is prepared through a one-pot method by utilizing the synergistic effect of a high-frequency power ultrasonic technology, a flash explosion technology and a supercritical carbon dioxide fluid medium, and the MXene is prepared through a high-frequency power ultrasonic technology, a flash explosion technology and a supercritical carbon dioxide fluid medium. Putting the fluoride-free etching agent and the MAX phase into a supercritical reaction kettle; introducing carbon dioxide to enable the carbon dioxide to reach a supercritical state, and applying continuous or discontinuous high-frequency power ultrasonic treatment to carry out supercritical state etching reaction; after the reaction is finished, carrying out instantaneous supercritical flash explosion treatment; releasing the pressure of the flash explosion area and the buffer area, collecting the product, centrifuging, washing and drying to obtain an MXene product; according to the method, the production of fluorine-containing waste liquid is avoided, the etching efficiency and the product yield are remarkably improved by virtue of high permeability and mass transfer characteristics of supercritical carbon dioxide, and a new way is provided for large-scale preparation of various MXene materials.

The embodiment of the utility model relates to an edge ring for etching equipment and the etching equipment. Wherein the etching equipment comprises an electrostatic chuck, an in-ring space of the edge ring is used for arranging the electrostatic chuck, the electrostatic chuck is used for adsorbing a wafer to a first surface of the electrostatic chuck, and a predetermined gap is formed between the inner side wall of the edge ring and the side wall of the electrostatic chuck; an annular groove is formed in the second surface of the edge ring around the in-ring space, the annular groove is used for collecting polymers generated in the wafer etching process, and the first surface and the second surface face the same direction. The edge ring provided by the embodiment of the utility model is provided with the annular groove, the annular groove can collect polymers generated in the etching process and falling polymer particles, the falling polymer particles are prevented from reaching the surface of the electrostatic chuck, BHE abnormity of the electrostatic chuck in the etching process is further avoided, and the wafer etching efficiency and etching quality are ensured.

This invention provides a highly selective Ag-Al composite etching solution composition, relating to the field of metal film etching technology. The highly selective Ag-Al composite etching solution composition comprises phosphoric acid, sulfuric acid, potassium hydrogen sulfate, ammonium sulfate, 1-hydroxybenzotriazole, 3-amino-1,2,4-triazole, dimethyl dithiophosphate, and an organic alcohol. This invention overcomes the shortcomings of existing technologies, effectively etching Al while causing almost no erosion of Ag, effectively preventing the problem of over-etching Ag in traditional processes.

The present invention discloses a growth method for improving the surface defect density of a silicon carbide epitaxial layer, the growth method comprising the following steps: S1, cleaning the silicon carbide substrate, using a solution of a specific mixing ratio to clean the substrate twice; S2, loading the substrate into a reaction chamber; S3, performing the first etching; S4, performing the second etching; S5, growing the first buffer layer; S6, growing the second buffer layer; S7, growing the main epitaxial layer; S8, epitaxial growth is completed, and the epitaxial wafer is taken out. The present invention uses a cleaning solution to clean the silicon carbide substrate twice, eliminates particles and metal ions on the surface of the substrate, improves the surface quality of the substrate, and thereby reduces the number of shallow triangle defects generated during the epitaxy process.

This invention relates to a method, equipment, apparatus, system, and production line for processing blind vias in multilayer glass substrates. The method includes: controlling a first laser focusing spot to enter and focus inside the glass layer from a predetermined position on the upper surface of the glass layer, thereby modifying or micro-exploding the glass layer to form loose blind vias; chemically etching the multilayer glass substrate with the loose blind vias to form second blind vias; and controlling a second laser cleaning spot to laser-process the insulating layer at the bottom of the second blind vias to form third blind vias. This invention uses a first laser focusing spot to process loose blind vias on the glass layer, making the glass in this area porous, increasing the contact area with the chemical etching solution, and thus accelerating the etching speed. Simultaneously, the first laser focusing spot modifies or micro-explodes the glass layer, and the glass within the loose blind vias is annealed by heat, further improving the etching efficiency.

The invention discloses a side wall etching method, a field effect transistor and semiconductor process equipment, and the method comprises the steps: providing a to-be-etched device which comprises a substrate, a grid electrode disposed on the substrate, and a to-be-etched film layer covering the grid electrode and the substrate, the to-be-etched film layer comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer which are sequentially arranged in a stacked mode in the direction away from the substrate, the third semiconductor layer is etched through first etching gas so that etching can be stopped on the surface of the second semiconductor layer, and the second semiconductor layer is etched through second etching gas so that etching can be stopped on the surface of the second semiconductor layer; according to the side wall etching method and the side wall etching device, the etching is stopped on the surface of the first semiconductor layer, so that the third semiconductor layer or the second semiconductor layer can be etched only through one etching step, the third semiconductor layer or the second semiconductor layer does not need to be etched through two etching steps any more, the side wall etching process can be simplified, and the side wall etching efficiency can be improved.

The present invention relates to the technical field of etching fine circuits of circuit boards, and discloses a fine circuit etching device for the surface of aluminum circuit boards, comprising a housing and an etching mechanism, wherein the etching mechanism comprises a driving component, a detection component, and a spray component, wherein the driving component is fixedly installed on the inner side of the housing, and the spray component is fixedly installed on the side of the driving component close to the transport mechanism, and evenly distributed detection components are fixedly connected on both sides of the driving component and on the outside of the spray component; the spray component comprises a suction pipe, a spray pipe, a nozzle, and a suction head, and the side of the driving component close to the transport mechanism is provided with a staggered suction pipe and a spray pipe. The present invention effectively reduces the occurrence of side etching through the cooperation between the transport mechanism, the adsorption mechanism, the etching mechanism, and the drainage mechanism, and solves the problems of difficulty in manufacturing high-precision fine circuits on the surface of existing aluminum circuit boards and high scrap rate in the manufacturing process.