Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Etching liquid system and etching method of aluminum nitride substrate

A technology of etching solution and system, which is applied in chemical instruments and methods, surface etching compositions, semiconductor/solid-state device manufacturing, etc., can solve the problems of low practicability and few etching methods, and achieve strong etching ability and high High-precision etching and high-quality etching effects

Active Publication Date: 2020-09-04
江苏富乐华半导体科技股份有限公司
View PDF10 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But at present, there are few etching solution systems and etching methods for the solder bonding layer and the practicability is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching liquid system and etching method of aluminum nitride substrate
  • Etching liquid system and etching method of aluminum nitride substrate
  • Etching liquid system and etching method of aluminum nitride substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The preparation of embodiment 1 etching solution system

[0037] The formula of the first etching solution is as follows in Table 1.

[0038] Table 1 The mass percent of each component of the first etching solution

[0039]

[0040] The configuration raw material of the first etching solution:

[0041] The ammoniacal liquor selects the ammoniacal solution of 5%-15% mass fraction for use;

[0042] The strong oxidant is selected from 20%-40% mass fraction of hydrogen peroxide solution or potassium permanganate solution / potassium permanganate configuration to achieve the same effect;

[0043] The complexing agent is an amino hydroxy acid salt compound, including one or more of sodium nitrilotriacetate, ethylenediaminetetraacetic acid salt, and diethylenetriaminepentacarboxylate, and the complexing agent with a mass fraction >95% is selected. agent.

[0044] The first etching solution configuration steps are as follows:

[0045] Add pure water into the glass contain...

Embodiment 2

[0056] Embodiment 2 The etching method of aluminum nitride ceramic substrate

[0057] The structure of the etched aluminum nitride ceramic substrate is as follows: figure 1 As shown, the aluminum nitride substrate 1 is followed by a solder joint layer 2 and a copper foil 3 , and the solder joint layer 2 and copper foil 3 have a solder joint layer etched area 20 and a copper foil etched area 30 that need to be removed by etching. Such as figure 2 As shown, the solder bonding layer 2 includes a copper-silver eutectic layer 21 , a nitrogen-titanium reaction layer 22 and an aluminum-titanium intermetallic compound 23 , and the corresponding etching regions are 201 , 202 and 203 respectively.

[0058] The etching process of aluminum nitride ceramic substrate is as follows: image 3 shown, including the following steps:

[0059] (a) metal copper layer etching

[0060] After the aluminum nitride ceramic substrate is pasted, exposed, and developed, the exposed metal copper layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an etching liquid system and an etching method of an aluminum nitride substrate. The etching liquid system comprises first etching liquid and second etching liquid, wherein thefirst etching liquid comprises the following components according to mass percent: 1% to 5% of ammonium hydroxide, 3% to 8% of strong oxidant, 0.5% to 5% of complexing agents and the balance of water, and the second etching liquid comprises the following components according to mass percent: 1% to 5% of alkali, 2% to 8% of hydrogen peroxide and the balance of water. According to the etching method of the aluminum nitride substrate, a solder bonding layer is etched in two steps of etching a copper-silver eutectic layer and a nitrogen-titanium reaction layer by using the first etching liquid and etching aluminum-titanium intermetallic compounds by using the second etching liquid. The etching liquid system has the advantages of high selectivity and high etching power; the etching method hasthe advantages of high etching efficiency and good etching quality; and the efficient high-precision etching of the aluminum nitride ceramic substrate with high thermal conductivity is realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing, and relates to an etching liquid system and an etching method for an aluminum nitride substrate, in particular to an etching liquid system and an etching method for an active alloy brazing material bonding layer. Background technique [0002] The power module is a combination of power semiconductor devices according to certain functions and then potted into a module. With the integration of power modules getting higher and higher, the power is getting bigger and bigger, the current density and ambient temperature of semiconductor chips are getting higher and higher, and the effective heat dissipation of devices has become an important issue for high-power LEDs, automotive headlights and high-power components. An important basis for normal operation. Because of its good thermal conductivity and thermomechanical properties, ceramic substrates are widely used as liners for power mo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/34C23F1/36C23F1/32C09K13/00H01L21/48
CPCC23F1/34C23F1/36C23F1/32C09K13/00H01L21/4846
Inventor 王斌贺贤汉欧阳鹏孙泉葛荘戴洪兴
Owner 江苏富乐华半导体科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com