Seasoning method and etching method

A warm-up and chamber technology, which is used in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve the problem of process gas photoresist accompanying film and excessive power, reduce the efficiency of plasma processing equipment, and increase production costs. and other problems to achieve the effect of reducing costs, improving efficiency and shortening time

Inactive Publication Date: 2014-01-15
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF8 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the efficiency of the current warm-up process is low, which not only reduces the use efficiency of plasma processing equipment, but also consumes more process gas, photoresist foil and electric energy when implementing the warm-up process, which increases production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Seasoning method and etching method
  • Seasoning method and etching method
  • Seasoning method and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make those skilled in the art better understand the technical solution of the present invention, the warm-up method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0030] In this embodiment, an inductively coupled plasma etching process is used to etch a photoetched substrate, and the substrate may be a silicon wafer or other materials such as sapphire. Before etching the substrate, a warm-up process is performed to make the environment inside the chamber reach the working state required for etching the substrate. Moreover, since the substrate is covered by photoresist, forming a polymer close to the composition of the photoresist on the inner wall of the chamber is conducive to improving the selectivity of etching, that is, covering the surface of the inner lining of the chamber with a polymer can make The environment inside the chamber reaches the working state required for etching the subs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a seasoning method and an etching method. The seasoning method, which is used for forming a polymer on the inner wall of a chamber in a seasoning process so as to enable the chamber to reach a working state required by the process, comprises the following steps: filling gases containing carbon and hydrogen into the chamber; motivating the gases containing carbon and hydrogen into a plasma body; and depositing a polymer layer on the inner wall of the chamber by utilizing the plasma body containing carbon and hydrogen. With the seasoning method, the time of the seasoning process can be reduced, the efficiency of the seasoning process is improved; besides, the cost of the seasoning process can be reduced, and the production cost of the whole etching process can be reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor processing equipment, and relates to a warm-up method and an etching method for an etching process. Background technique [0002] In the Inductively Coupled Plasma (ICP) etching process, the warm-up (Season) step is an important process step, the purpose of which is to maintain the stability of the etching chamber and the uniformity of the process . For new chambers (Chamber) that have never been used, chambers after periodic maintenance (PM), and chambers that have been idle (Idle) for a long time, warm-up processing is required to improve the stability and stability of the machine. Uniformity between slices. [0003] For the LED-ICP etching process, the warm-up process is particularly important. Experiments show that, compared with chambers treated by warm-up process, the chamber without warm-up process has a 50% lower selection ratio and about 30% lower etching rate. This is due to the fact tha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/00
Inventor 谢秋实
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap