Method for forming semiconductor structure

A semiconductor and plasma technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of thinning mask layer, stronger physical bombardment of high-energy ions, and slow gas exchange, etc. The effect of eclipse selection ratio
CN102737983AActive Publication Date: 2012-10-17ADVANCED MICRO FAB EQUIP INC CHINA
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
ADVANCED MICRO FAB EQUIP INC CHINA
Publication Date
2012-10-17

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Abstract

The invention discloses a method for forming a semiconductor structure, which comprises the following steps: providing a substrate and forming a dielectric layer on the substrate; forming a mask layer provided with an opening for exposing the surface of the dielectric layer on the dielectric layer; carrying out a plasma etching on the dielectric layer by taking the mask layer as a mask, wherein a bias power source outputs a bias power in pulse mode, when the bias power resource is switched on, etching part of the dielectric layer to form an etch-hole, when the bias power resource is switched off, forming a polymer on the surface of the mask layer, repeating the process of switching on the bias power resource and switching off the bias power resource till a through hole is formed. When forming the through hole, the etching step and the polymer forming step are repeated so that the polymer can keep a certain thickness, therefore, in the entire etching process, the mask layer is protected from damaging or the damage rate is reduced, and the etching ratio of the dielectric layer relative to the mask layer is increased.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique

[0002] With the development of integrated circuits to sub-micron dimensions, the density of devices and the complexity of processes are increasing, and strict control of the process becomes more important. Among them, the through hole is used as the interconnection between the multilayer metal layers and the connection channel between the active area of ​​the device and the external circuit. Due to its important role in the composition of the device structure, the formation process of the through hole has always been a technical skill in the art. personnel's attention.

[0003] Figure 1~Figure 3 It is a structural schematic diagram of the existing through-hole forming process.

[0004] refer to figure 1 , providing a semiconductor substrate 100, forming a dielectric layer 101 on the semiconducto...

Claims

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