Plasma etching method of insulating layer containing silicon
A technology of insulating layer and plasma, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reduced etching rate, difficult to adjust the configuration of etching parameters, etc., and achieve the effect of optimal etching accuracy
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[0019] The present invention provides a plasma etching method for a silicon-containing insulating layer, which includes an etching step and a sidewall passivation step (sidewall protection step) that are performed independently of each other, and the etching step and the sidewall passivation step are alternately cycled during the etching process. The sidewall passivation step until the etching reaches the target depth. Wherein, in the etching step, an etching gas is provided to etch the silicon-containing insulating material layer under the action of plasma and etch to a certain depth to expose an etching interface, the etching interface including sidewalls; The sidewall passivation step provides a reactive gas containing hydrocarbon components, and under the action of plasma, a hydrocarbon-containing polymer is formed on the sidewalls of the etching interface, which deposits or adheres to the etching interface The sidewall surface.
[0020] Using the plasma etching method of th...
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