39results about How to "Guaranteed etching effect" patented technology

The invention relates to a mixed additive for removing internal stress of an electrolytic copper foil and a method for producing a low-stress copper foil and belongs to the technical field of production of a high-precision electrolytic copper foil. The mixed additive for removing internal stress of the electrolytic copper foil comprises gelatin, hydroxyethyl cellulose and liquid additive. The method for producing the low-stress copper foil by using the mixed additive comprises the steps of preparing high-purity cathode copper and sulfuric acid into mixed solution of sulfuric acid and copper sulfate at 60-95 DEG C under the condition of stirring in the presence of air, wherein Cu<2+> is 85-100g/L and H2SO4 is 100-120g/L; adjusting the temperature of electrolyte to 45-60 DEG C and the flow to 50-70m<3>/h; adding 20-50mg/L of Cl<->, adding the mixed additive, with a drum titanium tube which continuously rotates as a cathode and arc titanium as an anode, carrying out copper electrolytic deposition and lastingly stripping to obtain 12-70 microns copper foil under the condition of the direct current of which the current density is 55-70A/dm<2>. The thickness of the copper foil is controlled by adjusting the rotation speed of the cathode; and the obtained copper foil has excellent performances.

The invention relates to a preparation method of a silicon thin film surface antireflection structure, and the method comprises the following steps of: 1, preparation of a silicon thin film: firstly sequentially packaging a silicon target with the purity of 99.9999%, a silver target with the purity of 99.999% and a cheap silicon wafer base into a vacuum chamber, then vacuumizing the vacuum chamber, then introducing argon into the vacuum chamber, and finally depositing a polycrystalline silicon thin film with the thickness of 0.3-5Mum on the base; 2, deposition of silver nano particles: continuously depositing silver nano particles on the polycrystalline silicon thin film obtained in the step one, wherein the thickness of the deposited silver nano particle layer is 2-20nm; 3, catalytic etching of precious metal silver nano particles; and 4, removal of the silver nano particles: soaking a black silicon thin film obtained in the step three with a salpeter solution with the mass fraction of 20-40% for 10-30 minutes at room temperature, so as to remove the silver nano particles reserved on the black silicon thin film, then washing with distilled water and ethyl alcohol successively, and drying with cold air. The silicon thin film surface antireflection structure disclosed by the invention is of a porous structure and has the characteristics of low cost, good antireflection effect and high stability.

The invention relates to a touch screen cutting method for an electronic product, and mainly relates to an OGS (one glass solution) capacitive touch screen cover glass processing method. The OGS capacitive touch screen cover glass processing method comprises the following steps: step 1: manufacturing a protective layer with the thickness of 20-30 mm on a large OGS toughened glass plate, and sequentially drying the protective layer by roasting, exposing and developing the protective layer and toughening a membrane of the protective layer; and step 2: immersing the large OGS toughened glass plate processed in the step 1 into an etching solution with the temperature of 21-25 DEG C for etching the large OGS toughened glass plate into small OGS toughened glass plates. By the OGS capacitive touch screen cover glass processing method, the large OGS toughened glass plate can be etched into the single small OGSs, without a repairing process after the etching process; and the etched single small OGSs are high in size precision and high in qualified rate.

The invention provides a passivation layer etching method, a manufacture method of a pad and a manufacture method of a semiconductor device. A first etching gas of relatively high fluorocarbon content is used to etch a passivation layer structure, an etching polymer can be prevented from accumulating in an etching cavity or in the sidewall of the passivation layer effectively, and the etching effect of the passivation layer is ensured; and a second etching gas of relatively low fluorocarbon content is used to etch an etching barrier layer under the passivation layer structure, over etching time of the etching barrier layer can be shortened greatly, top-layer metal below is prevented from excessive etching, and etched top-layer metal is prevented from accumulation in the etching cavity. Thus, the problem that the etching speed is decreased is solved effectively, and performances of the pad and the semiconductor device are ensured.

The invention provides an etching device for manufacturing an integrated optoelectronic device, which comprises a main body, a driving mechanism is arranged in the main body, a driving shaft is arranged on the driving mechanism, an etching device is arranged on the driving shaft, a fixing component is arranged on the inner wall of the main body, and the fixing component is arranged on the inner wall of the main body. An offset sensing assembly, a linkage assembly and a correction assembly are arranged on the fixing part; the deviation induction assembly comprises an induction air cushion, a movable part, an induction main rod and a guide part. According to the etching device for manufacturing the integrated optoelectronic device, by arranging the correction assembly, once the etching device shakes, the etching device inevitably drives the driving shaft to synchronously shake, and the correction main rod is utilized to drive the correction piece to be in contact with the driving shaft, so that the driving shaft which deviates due to shaking is corrected; therefore, the problem of jittering of the etching device is fundamentally solved, the etching effect of the etching device on the integrated optoelectronic device is improved, and meanwhile, the reliability of the equipment is effectively improved.

The invention provides a transistor forming method. The method includes providing a substrate; forming a false grid structure comprising a false grid on the surface of the substrate; forming a source region and a leak region on the substrate exposed in the false grid structure; forming an interlayer medium layer aligned with the false grid structure on the substrate; removing majority of the false grid of the false grid structure by dry etching; performing first dry washing on the surface of the remained false grid; performing wet washing on the surface of the remained false grid; performing second dry washing on the surface of the remained false grid; removing the remained false grid by wet etching, and forming an opening corresponding to the false grid in the shape; forming a grid medium layer and a metal grid electrode in the opening. By means of the first dry washing, the wet washing and the second dry washing, the contaminant remained on the surface of the false grid is removed after the false grid is formed by dry etching, and the performance of a transistor is optimized.

The invention discloses a preparation method of anti-dazzle glass. The preparation method of the anti-dazzle glass comprises the following steps: (1) preparation of etchant, (2) glass pretreatment, and (3) etching treatment. By the treatment method, the quality of the glass is improved effectively, the smoothness of particles on the surface of the glass is improved, the transmittance and the anti-dazzle effect are improved, the treatment efficiency and the yield are high, and thus, the anti-dazzle glass has quite high promotion and use value.

The invention relates to the technical field of electronics, in particular to copper foil removing equipment for UWB positioning base station substrate production. The technical problem is that a copper foil on a substrate has impurity particles during pressing, after the copper foil is etched and removed, the impurity particles fall into blind holes of the substrate, and additional processing steps need to be added for processing, so that the production cost is increased. According to the technical scheme, the copper foil removing equipment for UWB positioning base station substrate production comprises a bottom frame, a collecting box and the like; a collecting box is connected to the left portion of the bottom frame. When the device is used, residual glue residues in the blind holes of the substrate are cleaned through the air jet, the damage to the substrate is avoided, meanwhile, the adverse effect of the glue residues on etching is avoided, only the lower surface of the substrate is etched through overturning each time, the upper surface is sealed and protected, and the production efficiency is improved. Impurity particles are prevented from falling into the blind holes of the substrate after the copper foil is etched and removed when the copper foil is pressed, and additional processing steps are avoided.

The invention discloses a regenerated sub-solution reuse method comprising the following steps: obtaining a regenerated sub-solution and a hydrochloric acid solution; detecting the specific gravity ofa working solution above an etching line, and adding the regenerated sub-solution to the working solution according to the specific gravity of the working solution; and detecting the acidity of the working solution, and adding the hydrochloric acid solution to the working solution according to the acidity of the working solution. That is, the technical scheme of the invention avoids precipitationof ammonium chloride in the regenerated sub-solution and ensures the etching effect of the added regenerated sub-solution.

The invention provides an etching device. The etching device comprises a base, a containing part, a rotating disc, a translation part and a jet part; a fixing base is arranged on the base and provided with a containing cavity and a top cover, and a through hole is formed in the top cover; the rotating disc is arranged in the containing cavity and connected with a rotating driving assembly; the translation part is slidably arranged on the containing part and provided with a reaction cavity and an air inlet hole; and the jet part is arranged on the translation part and provided with a liquid inlet channel. During use, etching liquid is input into the reaction cavity through the liquid inlet channel, the internal pressure of the reaction cavity is reduced, external gas enters the reaction cavity through the gas inlet hole and reacts with the etching liquid, and a product with etching capability is formed. The translation part is moved until the reaction cavity is communicated with the through hole, so that the product flows into the containing cavity; and meanwhile, the rotating driving assembly is started, and the rotating disc drives a to-be-etched object to rotate. According to the etching device provided by the embodiment of the invention, a product can be prevented from reacting with the external environment, the etching efficiency can be improved by the structure of the etching device, and the etching effect is also ensured.

The invention discloses an efficient etching machine for a new energy photovoltaic wafer in the technical field of etching machines. The efficient etching machine comprises a protective shell, the inner side of the protective shell is provided with a placement mechanism for clamping and placing the photovoltaic wafer, and the left and right sides of the placement mechanism are connected with a conversion mechanism for driving the placement mechanism to rotate and convert the photovoltaic wafer; the photovoltaic wafer is stably supported by the placement mechanism when double-sided etching is carried out on the photovoltaic wafer every time, and after one side of the photovoltaic wafer is etched, the placement mechanism is rotated by matching with the conversion mechanism, and the placement mechanism is closed firstly to make the photovoltaic wafer clamped stably, so that the photovoltaic wafer is prevented from sliding out in the rotating process; and after conversion, the conversion mechanism opens the middle part of the placement mechanism, so that the placement mechanism is prevented from interfering with etching liquid to etch the photovoltaic wafer, the etching effect of the etching liquid on the photovoltaic wafer is ensured, and the two surfaces of the photovoltaic wafer are quickly etched.

The invention provides a method for producing a semiconductor device. The method comprises the following steps of: providing a substrate; forming a polycrystalline silicon layer on the surface of the substrate; forming a mask layer on the surface of the polycrystalline silicon layer; patterning the mask layer and the polycrystalline silicon layer to form a polycrystalline silicon grid and a barrier layer which is located on the surface of the polycrystalline silicon grid; and producing side walls at two sides of the polycrystalline silicon grid; doping at two sides of the polycrystalline silicon grid to form a source electrode and a drain electrode; forming self aligned polycide layers on the surface of the substrate and the surface of the barrier layer; forming interlayer dielectric layers on the surfaces of the polycide layers and the surfaces of the side walls; removing the interlayer dielectric layers to the polycrystalline silicon grid by a chemical and mechanical grinding method; removing the polycrystalline silicon grid to form a groove for obtaining a metal grid; and doping in the groove to form the metal grid. According to the method provided by the invention, etching speeds of different polycrystalline silicon grids are basically the same and the etching effect is guaranteed, so that the quality of the subsequently formed metal grid is ensured.