39results about How to "Guaranteed etching effect" patented technology

The present application provides a method for preparing a three-dimensional memory, the method comprising: alternately stacking sacrificial layers and dielectric layers on one side of a substrate to form a stacked structure; a gate line gap; removing the sacrificial layer to form a gate gap; forming a deposition layer on an inner wall of the gate line gap and an inner wall of the gate gap; and alternately performing a dry etching process and a wet etching process to remove the deposition layer At least a portion of the gate gap to form a groove having a target depth at the gate gap.

The present invention provides a method for forming a transistor, comprising: providing a substrate; forming a dummy gate structure including a dummy gate on the surface of the substrate; forming a source region and a drain region in the substrate exposed by the dummy gate structure; An interlayer dielectric layer flush with the dummy gate structure is formed on the substrate; most of the dummy gates in the dummy gate structure are removed by dry etching; first dry cleaning is performed on the remaining dummy gate surface ; Wet cleaning the surface of the remaining dummy gate; Carrying out a second dry cleaning on the surface of the remaining dummy gate; Wet etching removes the remaining dummy gate to form an opening corresponding to the shape of the dummy gate; forming a gate in the opening Dielectric layer and metal gate. Through the steps of first dry cleaning, wet cleaning and second dry cleaning, the residual pollutants on the surface of the dummy gate after dry etching the dummy gate are removed, so as to optimize the performance of the transistor.

The invention discloses an etchant for photoelectrochemically etching gallium nitride. The etchant is composed of amino acid or its derivatives dissolved in a solvent. The invention uses amino acid or its derivatives as an etchant to photoelectrochemically etch gallium nitride, which can effectively etch gallium nitride, and the etching process has low equipment requirements, convenient operation, simple process and environmental protection, which is beneficial to The damage to the surface of the material is small.

The invention relates to a touch screen cutting method for an electronic product, and mainly relates to an OGS (one glass solution) capacitive touch screen cover glass processing method. The OGS capacitive touch screen cover glass processing method comprises the following steps: step 1: manufacturing a protective layer with the thickness of 20-30 mm on a large OGS toughened glass plate, and sequentially drying the protective layer by roasting, exposing and developing the protective layer and toughening a membrane of the protective layer; and step 2: immersing the large OGS toughened glass plate processed in the step 1 into an etching solution with the temperature of 21-25 DEG C for etching the large OGS toughened glass plate into small OGS toughened glass plates. By the OGS capacitive touch screen cover glass processing method, the large OGS toughened glass plate can be etched into the single small OGSs, without a repairing process after the etching process; and the etched single small OGSs are high in size precision and high in qualified rate.

The invention relates to a preparation method of a silicon thin film surface antireflection structure, and the method comprises the following steps of: 1, preparation of a silicon thin film: firstly sequentially packaging a silicon target with the purity of 99.9999%, a silver target with the purity of 99.999% and a cheap silicon wafer base into a vacuum chamber, then vacuumizing the vacuum chamber, then introducing argon into the vacuum chamber, and finally depositing a polycrystalline silicon thin film with the thickness of 0.3-5Mum on the base; 2, deposition of silver nano particles: continuously depositing silver nano particles on the polycrystalline silicon thin film obtained in the step one, wherein the thickness of the deposited silver nano particle layer is 2-20nm; 3, catalytic etching of precious metal silver nano particles; and 4, removal of the silver nano particles: soaking a black silicon thin film obtained in the step three with a salpeter solution with the mass fraction of 20-40% for 10-30 minutes at room temperature, so as to remove the silver nano particles reserved on the black silicon thin film, then washing with distilled water and ethyl alcohol successively, and drying with cold air. The silicon thin film surface antireflection structure disclosed by the invention is of a porous structure and has the characteristics of low cost, good antireflection effect and high stability.

The invention relates to a mixed additive for removing internal stress of an electrolytic copper foil and a method for producing a low-stress copper foil and belongs to the technical field of production of a high-precision electrolytic copper foil. The mixed additive for removing internal stress of the electrolytic copper foil comprises gelatin, hydroxyethyl cellulose and liquid additive. The method for producing the low-stress copper foil by using the mixed additive comprises the steps of preparing high-purity cathode copper and sulfuric acid into mixed solution of sulfuric acid and copper sulfate at 60-95 DEG C under the condition of stirring in the presence of air, wherein Cu<2+> is 85-100g / L and H2SO4 is 100-120g / L; adjusting the temperature of electrolyte to 45-60 DEG C and the flow to 50-70m<3> / h; adding 20-50mg / L of Cl<->, adding the mixed additive, with a drum titanium tube which continuously rotates as a cathode and arc titanium as an anode, carrying out copper electrolytic deposition and lastingly stripping to obtain 12-70 microns copper foil under the condition of the direct current of which the current density is 55-70A / dm<2>. The thickness of the copper foil is controlled by adjusting the rotation speed of the cathode; and the obtained copper foil has excellent performances.