Etching solution for photoelectrochemical etching of gallium nitride

Abstract

The invention discloses an etchant for photoelectrochemically etching gallium nitride. The etchant is composed of amino acid or its derivatives dissolved in a solvent. The invention uses amino acid or its derivatives as an etchant to photoelectrochemically etch gallium nitride, which can effectively etch gallium nitride, and the etching process has low equipment requirements, convenient operation, simple process and environmental protection, which is beneficial to The damage to the surface of the material is small.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor etching, and in particular relates to an etching solution for photoelectrochemical etching of gallium nitride. Background technique

[0002] Gallium Nitride (GaN), as a typical representative of the third-generation semiconductor materials, has excellent physical and chemical properties such as large band gap, high electron saturation shift velocity, good thermal conductivity, high hardness, and good thermal stability. It is one of the most concerned wide-bandgap and direct-bandgap semiconductor materials for making blue-green light and ultraviolet light optoelectronic devices.

[0003] Current GaN etching methods are divided into dry etching and wet etching. Due to the high thermal and chemical stability of GaN materials, dry etching was mainly used in the early days. Dry etching uses expensive, bulky equipment, complicated operations, and most methods use toxic and harmful gases. In ord...

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