34results about How to "Etching is effective" patented technology

An etching method capable of increasing the selectivity of a polysilicon film to a silicon oxide film and suppressing recess formation on a silicon base layer. That part of the polysilicon film of a wafer transferred into a processing vessel which is exposed through an opening is etched so as to slightly remain on a gate oxide film. The pressure in a processing space is set to 66.7 Pa, HBr gas and He gas are supplied to the processing space, and a microwave of 2.45 GHz is supplied to a radial line slot antenna. The polysilicon film is etched by plasma generated from the HBr gas so as to be completely removed, the exposed gate oxide film is etched, and a resist film and an anti-reflection film are etched.

The invention discloses a method for reducing plasma etching machine cavity pollution in GaAs back hole process. The method comprises the following steps: uniformly coating an electron beam photoresist on the front face of a substrate, pasting the front face of the substrate onto a quartz tray using a liquid wax, pasting the quartz tray, to which the substrate is pasted, to a thinning glass sheet, performing thinning process, taking the quartz tray together with the substrate down from the thinning glass sheet, uniformly coating the photoresist and then baking the sheet, forming a back hole pattern, forming a back hole, and removing the photoresist and the liquid wax to enable the substrate sheet to be separated from the quartz tray; and the liquid wax is composed of a certain amount of a Crystalbond 509 strong adhesive and an amount of acetone capable of dissolving the Crystalbond 509 strong adhesive. The liquid wax is adopted to replace a traditional high-temperature wax, a mutual dissolution problem cannot be generated, the liquid wax also has excellent adhesivity, and the problems of the sputtered high-temperature wax due to plasma bombardment and metal pollution of a plasma etching machine cavity inner wall are solved.

The invention provides an evaluation method of an acid fracturing effect of carbonate rock. The method comprises the following steps of performing appearance scanning on a rock core sample to obtain the initial surface roughness degree, performing acid etching treatment on the rock core sample by using acid liquid to be tested; performing appearance scanning again to obtain the surface roughness degree after acid etching after the acid etching treatment is completed, working out the surface roughness degree difference value of the surface roughness degree of the rock core sample after the acid etching and the initial surface roughness degree, and comparing the obtained surface roughness difference value with a threshold value so as to evaluate the acid fracturing effect of the acid liquid to be tested. The acid fracturing effect is evaluated through the appearance features of the surface of the rock core sample before and after the acid etching, so that the data reference and theoretical basis can be provided for the subsequent acid liquid screening, acidification fracturing design and optimization and carbonate rock acidification yield increase record recognition.

The invention discloses a method for reducing plasma etcher cavity pollution in a back hole process. The method comprises the steps of sputtering or evaporating a metal mask layer on the back of a SiC substrate; enabling the metal mask layer to be coated with photoresist, and drying the photoresist; performing photoetching on the photoresist to form a photoresist pattern; utilizing the formed photoresist pattern to corrode the metal mask layer, and forming a metal mask graph; performing plasma bombardment on the back of the SiC substrate of the formed metal mask graph in a plasma etcher, sputtering the photoresist on the metal mask layer to an inner wall of a cavity of the plasma etcher, and forming a photoetching layer on the inner wall of the cavity of the plasma etcher; utilizing the formed metal mask graph to etch the SiC back in the plasma etcher, and forming a back hole until the back hole is communicated with SiC front source metal. By utilizing the method, the pollution to the inner wall of the plasma etcher cavity caused by a metal mask in the back hole process is reduced, and using efficiency of the plasma etcher is improved.

The invention discloses an etchant for photoelectrochemically etching gallium nitride. The etchant is composed of amino acid or its derivatives dissolved in a solvent. The invention uses amino acid or its derivatives as an etchant to photoelectrochemically etch gallium nitride, which can effectively etch gallium nitride, and the etching process has low equipment requirements, convenient operation, simple process and environmental protection, which is beneficial to The damage to the surface of the material is small.

The invention discloses a method for preparing mass uniform non-spherical Janus particles. The method is capable of, based on a gas-liquid interface, using uniform monodispersion colloid particles asa raw material, using a volatile solvent as an etching agent, and preparing the non-spherical particles in regular and various morphologies along with the time extension, wherein a size of the particles is adjusted according to a size of template particles, and a productive rate is up to 95% or more. The non-spherical particles belong to one type of Janus asymmetrical particles, can be used for the self-assembly simulation of the colloid particles, and are beneficial to know a self-assembly phenomenon of the microcosmic colloid particles by people.

The invention discloses a method for etching c-plane sapphire. The method comprises the following steps: firstly immersing c-plane sapphire in a mixed solution consisting of hydrofluoric acid and water at 25 DEG C for 20 minutes, then taking out the c-plane sapphire, sequentially performing alcohol washing, supersonic washing and drying to obtain c-plane sapphire treated by hydrofluoric acid; then immersing the c-plane sapphire treated by the hydrofluoric acid in a mixed acid consisting of concentrated sulfuric acid and concentrated phosphoric acid for 20 minutes, naturally cooling, taking out the c-plane sapphire and sequentially performing alcohol washing, supersonic washing and drying to obtain c-plane sapphire treated by the mixed acid; and finally putting the c-plane sapphire treated by the mixed acid in a melting solution of flaky NaOH at the temperature of 325-340 DEG C for 10 minutes, taking out the c-plane sapphire and sequentially performing alcohol washing, supersonic washing and drying to finish the etching of the c-plane sapphire. The method for etching the c-plane sapphire disclosed by the invention has the advantages of good etching effect, good uniformity, good quality, high yield and the like.

The present invention aims at the present existing cemented carbide surface deposition CVD diamond film pretreatment process, the speed of removing Co on the edges and sharp corners is faster than the speed of removing Co on the surface, resulting in a decrease in the strength of the edges and sharp corners, which affects The performance of the product may even cause problems such as edge and sharp corner corrosion. A gradient method pretreatment process for depositing CVD diamond film on the surface of cemented carbide is invented. Its main process flow is: polishing (1)→cleaning (2)→etching WC(3)→cleaning(4)→first etching Co(5)→cleaning(6)→drying(7)→glue coating(8)→second etching Co(9) )→Cleaning (10)→Sol (11)→Planting (12), especially the gluing process ensures that the surface pretreatment of the cemented carbide meets the deposition requirements of the CVD diamond film, and at the same time makes the edge of the cemented carbide product The amount of Co removal at the sharp corners is basically the same as that on the surface, which ensures the strength of the edges and sharp corners and improves the performance of the CVD diamond film.