34results about How to "Etching is effective" patented technology

An etching method capable of increasing the selectivity of a polysilicon film to a silicon oxide film and suppressing recess formation on a silicon base layer. That part of the polysilicon film of a wafer transferred into a processing vessel which is exposed through an opening is etched so as to slightly remain on a gate oxide film. The pressure in a processing space is set to 66.7 Pa, HBr gas and He gas are supplied to the processing space, and a microwave of 2.45 GHz is supplied to a radial line slot antenna. The polysilicon film is etched by plasma generated from the HBr gas so as to be completely removed, the exposed gate oxide film is etched, and a resist film and an anti-reflection film are etched.

The invention discloses a method for reducing plasma etching machine cavity pollution in GaAs back hole process. The method comprises the following steps: uniformly coating an electron beam photoresist on the front face of a substrate, pasting the front face of the substrate onto a quartz tray using a liquid wax, pasting the quartz tray, to which the substrate is pasted, to a thinning glass sheet, performing thinning process, taking the quartz tray together with the substrate down from the thinning glass sheet, uniformly coating the photoresist and then baking the sheet, forming a back hole pattern, forming a back hole, and removing the photoresist and the liquid wax to enable the substrate sheet to be separated from the quartz tray; and the liquid wax is composed of a certain amount of a Crystalbond 509 strong adhesive and an amount of acetone capable of dissolving the Crystalbond 509 strong adhesive. The liquid wax is adopted to replace a traditional high-temperature wax, a mutual dissolution problem cannot be generated, the liquid wax also has excellent adhesivity, and the problems of the sputtered high-temperature wax due to plasma bombardment and metal pollution of a plasma etching machine cavity inner wall are solved.

The invention discloses a method for preparing mass uniform non-spherical Janus particles. The method is capable of, based on a gas-liquid interface, using uniform monodispersion colloid particles asa raw material, using a volatile solvent as an etching agent, and preparing the non-spherical particles in regular and various morphologies along with the time extension, wherein a size of the particles is adjusted according to a size of template particles, and a productive rate is up to 95% or more. The non-spherical particles belong to one type of Janus asymmetrical particles, can be used for the self-assembly simulation of the colloid particles, and are beneficial to know a self-assembly phenomenon of the microcosmic colloid particles by people.

The present invention aims at the present existing cemented carbide surface deposition CVD diamond film pretreatment process, the speed of removing Co on the edges and sharp corners is faster than the speed of removing Co on the surface, resulting in a decrease in the strength of the edges and sharp corners, which affects The performance of the product may even cause problems such as edge and sharp corner corrosion. A gradient method pretreatment process for depositing CVD diamond film on the surface of cemented carbide is invented. Its main process flow is: polishing (1)→cleaning (2)→etching WC(3)→cleaning(4)→first etching Co(5)→cleaning(6)→drying(7)→glue coating(8)→second etching Co(9) )→Cleaning (10)→Sol (11)→Planting (12), especially the gluing process ensures that the surface pretreatment of the cemented carbide meets the deposition requirements of the CVD diamond film, and at the same time makes the edge of the cemented carbide product The amount of Co removal at the sharp corners is basically the same as that on the surface, which ensures the strength of the edges and sharp corners and improves the performance of the CVD diamond film.