34results about How to "Etching is effective" patented technology

The invention provides a pretreatment process for a CVD diamond film deposited on a hard alloy surface by adopting a gradient method in view of the problems of low intensity of the seamed edges and sharp corners, affecting the product performance and even the corrosion of seamed edges and sharp corners and so on caused by the faster removal of Co on the seamed edges and the sharp corners than Co on a face in the pretreatment process of the existing CVD diamond films deposited on a hard alloy surface; the main process procedures are provided in sequence as follows: polishing (1) arrow cleaning(2) arrow etching of WC (3) arrow cleaning(4) arrow first etching of Co(5) arrow cleaning(6) arrow drying (7) arrow glue spreading (8) arrow second etching of Co(9) arrow cleaning(10) arrow sol(11) and seeding with diamond powder (12), particularly, the gluing technique of the procedures ensures that the hard alloy surface meets the deposit demands of the CVD diamond films after being pretreated and at the same time, the Co content of the seamed edges and the sharp corners of the hard alloy product and the removal Co content on the face are caused to be basically consistent, which ensures the intensity of the seamed edges and the sharp corners and improves the performance of the CVD diamond films.

The present invention relates to an etching liquor for silver alloy, it includes 1-60 weight portions of ammonium compound, 1-60 weight portions of hydrogen peroxide and 0-96 weight portions of water, According to the requirements said etching liquor also can include 1-10 weight portions of sulfuric acid or organic acid so as to can obtain optimum control of etching rate.

A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.

The invention discloses a preparation method of an integrated semiconductor device and the integrated semiconductor device. The method comprises the steps of providing a first substrate, and forming a first nonmetal bonding material layer on the surface of the first substrate, providing a second substrate, and forming a device material layer on the surface of the second substrate, forming a second non-metal bonding material layer on the surface of the device material layer, bonding the second non-metal bonding material layer and the first non-metal bonding material layer to form a non-metal bonding layer, removing the second substrate, and performing graphical etching on the device material layer to obtain a device layer containing at least one semiconductor device. Through the non-metal bonding mode, the problem of electric leakage caused by overflowing of graphical etching metal and cleaning of metal particle residues after metal bonding is avoided, through the non-metal bonding mode, an effective etching high selection ratio is formed, a process window is increased, and feasibility is improved.

An etching liquid for silver alloy contains proportionally hydrogen peroxide, ammonium compound or one of sulfuric acid, nitric acid and organic acid, and water. The etched silver alloy is also disclosed.

The invention discloses a method for etching c-plane sapphire. The method comprises the following steps: firstly immersing c-plane sapphire in a mixed solution consisting of hydrofluoric acid and water at 25 DEG C for 20 minutes, then taking out the c-plane sapphire, sequentially performing alcohol washing, supersonic washing and drying to obtain c-plane sapphire treated by hydrofluoric acid; then immersing the c-plane sapphire treated by the hydrofluoric acid in a mixed acid consisting of concentrated sulfuric acid and concentrated phosphoric acid for 20 minutes, naturally cooling, taking out the c-plane sapphire and sequentially performing alcohol washing, supersonic washing and drying to obtain c-plane sapphire treated by the mixed acid; and finally putting the c-plane sapphire treated by the mixed acid in a melting solution of flaky NaOH at the temperature of 325-340 DEG C for 10 minutes, taking out the c-plane sapphire and sequentially performing alcohol washing, supersonic washing and drying to finish the etching of the c-plane sapphire. The method for etching the c-plane sapphire disclosed by the invention has the advantages of good etching effect, good uniformity, good quality, high yield and the like.

The invention discloses a high-selectivity etching solution for aluminum nitride and silicon. The etching solution comprises the following main components in percentage by mass: 5-40% of alkali, 0.2-0.5% of fluoride, 0.1-0.5% of organochlorosilane, 1-5% of silicate and the balance of water. The etching solution can be used for quickly cleaning the aluminum nitride layer, no crystal lattice remains, and the selection ratio of the etching solution to the Si substrate can reach more than 1000.

The invention discloses a TiN thin film etching method, comprising the following steps: step 1, carrying out NH3 treatment on a silicon wafer covered with the TiN thin film; 2, coating the NH3-treatedsilicon wafer with glue and carrying out development treatment on the silicon wafer; 3, etch and molding that silicon wafer. The invention can effectively etch the TiN film without affecting the characteristics of the lower film.

The present invention provides a front conductive paste for crystalline silicon solar cells. In parts by weight, the front conductive paste for crystalline silicon solar cells includes the following raw material components: 80.0-93.0 parts of metal powder; 6.0-15.0 parts of organic carrier; 1.0-5.0 parts of material etchant; wherein, the oxide etchant contains at least PbO, B ₂ o ₃ , MgO and WO ₃ , and the MgO and WO ₃ The weight ratio is 0.1:15~6:1; B ₂ o ₃ and WO ₃ The weight ratio of 0.1:15~6:1; WO ₃ The weight ratio with PbO is 1:50-15:25. During the sintering process, the front conductive paste can make metal powder and silicon form good ohmic contact, greatly reduce resistance, and finally obtain a front electrode with low contact resistance, good conductivity and strong adhesion.

The invention provides a laminated metal and metal oxide etching solution composition and a use method thereof. The laminated metal and metal oxide etching solution composition comprises the following raw materials by mass of: 5% to 20% of hydrogen peroxide, 1% to 10% of inorganic acid, 0.01% to 1% of a fluorine ion source, 1% to 10% of a complexing agent, 1% to 10% of an alkali compound, 0.01% to 1% of a metal corrosion inhibitor, and the balance of a solvent. According to the laminated metal and metal oxide etching liquid composition and the use method thereof provided by the invention, not only the laminated metal and metal oxide can be effectively etched, but also the etching morphology is good, the etching precision is high, and the requirements of customers can be effectively met.

The invention relates to the technical field of lithography, and specifically relates to a diffraction grating etcher. The diffraction grating etcher includes a first fixed housing, a transmission mechanism, a second fixed housing, an etching mechanism, a feeding mechanism, a sealing mechanism, an adjusting mechanism and a lithography mechanism, wherein the lithography mechanism is arranged in thefirst fixed housing, and can effectively project on a silica gel plate to form a model; the etching mechanism is arranged in the second fixed housing, and can effectively use the projected silica gelplate to perform etching to manufacture a real product; the transmission mechanism is arranged between the first fixed housing and the second fixed housing, and can transmit the projected silica gelplate in the first fixed housing into the second fixed housing for etching while maintaining the sealing properties of the first fixed housing and the second fixed housing, so as to realize continuousproduction; and in the first fixed housing, the feeding mechanism is used to perform feeding, and at the same time the sealing mechanism is used to maintain the sealing state, and when the sealing mechanism is opened, the sealing mechanism can guarantee that no external light enters and can guarantee the sealing properties during the feeding process.

The invention belongs to the technical field of two-dimensional nano materials, and particularly relates to an etching method of an MXene material. The invention relates to an etching method of an MXene material, which comprises the following steps: mixing a precursor MAX phase material, chalcogenide or nitrogen elementary substance element powder or related alloy phase thereof and inorganic salt, and reacting at high temperature. The method disclosed by the invention is simple, efficient and environment-friendly, multiple defects caused by using a hydrofluoric acid (HF) solution with high toxicity and high risk as an etching agent to prepare MXene are avoided, chemical modification of the surface of the MXene material is realized, physical and chemical properties of the MXene material can be effectively regulated and controlled through end group modification, and functional application and large-scale preparation of MXene are expected to be further promoted.

The present invention provides a front conductive paste for crystalline silicon solar cells. In parts by weight, the front conductive paste for crystalline silicon solar cells includes the following raw material components: 80.0-93.0 parts of metal powder; 6.0-15.0 parts of organic carrier; 1.0-5.0 parts of material etchant; wherein, the oxide etchant contains at least Pb ₃ o ₄ , CuO and Li ₂ O, and the CuO and Pb ₃ o ₄ The weight ratio of CuO and Li is 0.02 to 2.5, and the CuO and Li ₂ The weight ratio of O is 0.025-3. During the sintering process, the front conductive paste can make metal powder and silicon form good ohmic contact, greatly reduce resistance, and finally obtain a front electrode with low contact resistance, good conductivity and strong adhesion.

The invention discloses an etching solution for photoelectrochemical etching of gallium nitride. The etching solution is formed by dissolving amino acid or derivatives thereof in a solvent. According to the invention, the amino acid or the derivative of the amino acid is used as an etching agent for photoelectrochemical etching of the gallium nitride, the gallium nitride can be effectively etched, and the etching process is low in equipment requirement, convenient to operate, simple in process, green, environmentally friendly and small in damage to the surface of a material.