Etching process for semiconductors

Abstract

A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano / micro-structures etched into the semiconductor material can be fabricated.

Description

technical field [0001] The present disclosure broadly relates to a process for etching semiconductors. Background technique [0002] The rapid development of optoelectronics has created a need for methods of fabricating nanoscale patterns on semiconductor surfaces. Typically, these patterns are etched into the semiconductor substrate by a variety of techniques. For example, wet chemical etching has been used to etch various semiconductors. However, wet chemical etching can be isotropic, limiting the aspect ratio of features that can be fabricated, and the process has low uniformity. The production industry in the optoelectronics industry requires a more controlled etching process than can be achieved using wet etching. [0003] Due to the disadvantages of wet chemical etching, dry etching processes have been developed for semiconductors. For example, reactive ion etching has been used to produce well-controlled etch profiles in silicon substrates. Reactive ion etching i...

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Problems solved by technology

However, these processes suffer from several disadvantages, including extensive polymer deposition, which leads to etch-stop mechanisms, rough surfaces, and low etch rates (less than 50nm / min)

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