Etching solution for photoelectrochemical etching of gallium nitride
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
- Publication Date
- 2021-05-11
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of semiconductor etching, and in particular relates to an etching solution for photoelectrochemical etching of gallium nitride. Background technique
[0002] Gallium Nitride (GaN), as a typical representative of the third-generation semiconductor materials, has excellent physical and chemical properties such as large band gap, high electron saturation shift velocity, good thermal conductivity, high hardness, and good thermal stability. It is one of the most concerned wide-bandgap and direct-bandgap semiconductor materials for making blue-green light and ultraviolet light optoelectronic devices.
[0003] Current GaN etching methods are divided into dry etching and wet etching. Due to the high thermal and chemical stability of GaN materials, dry etching was mainly used in the early days. Dry etching uses expensive, bulky equipment, complicated operations, and most methods use toxic and harmful gases. In ord...