68results about "Selenium/tellurium compounds with other elements" patented technology

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a nickel-cobalt-selenium (Co1-xNixSe2) nano material for electrocatalytic oxidation of ethylene glycol as well as a preparation method and application of the nickel-cobalt-selenium (Co1-xNixSe2) nano material. The material is prepared by a hydrothermal method which comprises the following steps: (1) pouring 20mL of deionized water containing 475.9 mg of CoCl2. 6H2O into a 1mol / L NaOH solution containing 0.32 g of selenium powder to prepare a precursor solution; (2) placing in a stainless steel autoclave with a polytetrafluoroethylene lining, carrying out hydrothermal reaction at 180 DEG C for 18 hours, washing with absolute ethyl alcohol and deionized water, and carrying out vacuum drying at 60 DEG C to obtain a CoSe2 material; and (3) the molar feeding ratio of CoCl2. 6H2O to NiCl2. 6H2O is adjusted, so that the nickel / cobalt ratio x is 0.25, 0.50 or 0.75, and materials with different components, namely Co < 0.75 > Ni < 0.25 > Se < 2 >, Co < 0.50 > Ni < 0.50 > Se < 2 > and Co < 0.25 > Ni < 0.75 > Se < 2 >, are prepared. The series of materials are applied to ethylene glycol oxidation under the alkaline condition, the catalytic performance of Co < 0.50 > Ni < 0.50 > Se < 2 > is optimal, the current density reaches 111 mA cm <-2 > under the electric potential of 1.6 V vs.RHE, the total Faraday efficiency reaches up to 91.4%, and the application prospect in the field of PET plastic recovery is wide.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The application provides an inverse perovskite material, a preparation method thereof, a positive electrode material and a sodium ion battery, and belongs to the technical field of electrode materials. The inverse perovskite material has an inverse perovskite structure phase, and a chemical expression formula of the inverse perovskite material is Na x Li y TM z Ch m O n ; wherein 1.5 >= x >= 0.4, 1.6 >= y >= 0.5, 0.8 <= z <= 1.2, 0.8 <= m <= 1.2, and 0.8 <= n <= 1.2; TM is selected from transition metal elements, and Ch is selected from chalcogen elements. The application can improve the first circle discharge specific capacity and the cycle performance of a sodium ion battery prepared by using the inverse perovskite material as a positive electrode material by selecting Na elements, Li elements, transition metal elements, chalcogen elements and oxygen elements and regulating the ratio of the elements.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

A stabilized cathode composition is disclosed. The composition includes the formula: AxMChy, wherein x is 1 to 5; y is 2 to 5; A is selected from the group consisting of: Li, Na, K, Mg, and Ca; M is selected from the group consisting of Ni and Co free d−block transition metals or p−block metals or combination of two or more thereof, Ch is selected from the group consisting of S, Se or their combination with O and / or Te.

The solid electrolyte has: first crystallites formed on primary particles and having a first crystal structure; a second crystallite formed in the same primary particle as the first crystallite and having a second crystal structure different from the first crystal structure; and an amorphous phase, the first crystallites and the second crystallites each contain lithium, the first crystal structure is a hexagonal crystal, the second crystal structure is an orthorhombic crystal, and both the crystallite size of the first crystallites and the crystallite size of the second crystallites are 50 nm or less.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi2Se(3-x)Sx, MOS2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

The application provides a thermoelectric material, a preparation method thereof and a thermoelectric device, and the chemical formula of the thermoelectric material is Sn (1‑x‑y) Cu x La y Se, wherein 0<=x<=0.2 and 0 The thermoelectric material provided by the application is doped with lanthanum (La) and / or copper (Cu) to effectively control the polycrystalline tin selenide lattice arrangement and macroscopically, so that the thermoelectric material has high hole carrier concentration and dense crystal defects, thereby improving the ZT value of the thermoelectric material Sn (1‑x‑y) Cu x La y Se, and further improving the thermoelectric conversion efficiency of the thermoelectric material. Meanwhile, the thermoelectric material has a wide temperature range, can effectively utilize heat energy exceeding 200 DEG C, and has good application prospect.

Nanoparticles, methods and compositions for making the same, composites, and devices are provided. The nanoparticles include semiconductor nanocrystals comprising zinc, indium, and selenium. In the semiconductor nanocrystal, the molar ratio of indium to selenium (In: Se) is greater than or equal to about 0.1: 1 and less than or equal to about 0.5: 1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

This invention belongs to the field of hollow multi-component nanomaterial preparation technology, specifically disclosing a hollow Cu3NbSe4 nanomaterial, its preparation method, and its application. The microstructure of the nanomaterial is a nanoscale hollow cubic structure. The preparation method includes: (1) dissolving niobium source and selenium source separately in oleylamine solvent by heating for later use; (2) treating the soluble copper source and the niobium source dissolved in (1) in a high-boiling-point organic solvent for deoxygenation and dehydration, and then carrying out a solvothermal reaction; (3) when (2) is heated to a certain temperature, injecting the selenium source dissolved in (1) to carry out a solvothermal reaction, and separating the obtained solid product after the reaction is completed. The synthesis process of this invention is simple, the reaction conditions are mild, and the energy consumption and cost are low; more importantly, it realizes the preparation of hollow Cu3NbSe4 nanomaterial with uniform morphology and size, high crystallinity, and stronger light absorption capacity, and the prepared hollow Cu3NbSe4 shows excellent performance in photocatalytic hydrogen production.

The invention discloses a Cu3SbSe4 nanosheet as well as a preparation method and application thereof, and belongs to the technical field of functional nano material preparation. The preparation method comprises the following steps: dissolving SeO and beta-cyclodextrin in deionized water to form a solution A; ascorbic acid is dissolved in deionized water to form a solution B; under a stirring condition, dropwise adding the solution A into the solution B, and reacting at room temperature to obtain brick-red precipitate; carrying out centrifugal separation on the brick-red precipitate, washing, dispersing in absolute ethyl alcohol, standing to obtain Se NWs, and carrying out vacuum drying for later use; the preparation method comprises the following steps: adding CuCl, SbCl3, Se NWs and anhydrous ethylenediamine into a reaction container, reacting for 2-3 hours under the reflux condition of 120-160 DEG C, filtering and separating the generated black precipitate, washing, and drying in vacuum to obtain the Cu3SbSe4 nanosheet. The preparation process is simple, the reaction condition is mild, the obtained product is uniform in morphology and has a nanosheet structure, and the performance stability of the material applied to the fields of photoelectricity, thermoelectricity and the like can be improved.

The application provides an electrode material preparation method, a battery negative plate and a sodium ion battery. The method comprises the following steps: dissolving dimethyl imidazole and a cobalt salt in a solvent and stirring, and then performing centrifugation, washing and drying operations to obtain a ZIF-67 purple sample; dispersing the ZIF-67 purple sample in a mixed solution of ethanol and deionized water, adding a tris-hydroxymethyl aminomethane, adding a dopamine hydrochloride after the tris-hydroxymethyl aminomethane is completely dissolved, and then performing stirring, centrifugation, washing and drying operations to obtain a precursor; uniformly dispersing the precursor in an ethanol solution, adding a nickel salt solution and stirring, and then performing suction filtration and drying operations to obtain a hollow LDH structure; uniformly grinding the hollow LDH structure with selenium powder, placing the selenium powder in a reaction container, and performing selenization under a first preset condition to obtain an electrode material. The application can overcome the problems of stress and structure collapse caused by the volume change of sodium ions, accelerate the insertion and stripping of sodium ions, and guarantee stability and cycle performance.

A solid electrolyte material includes Li, T, X, and A, where T is at least one of Sb, P, As, Si, Ge, Al, and B; X is one or more halogens or N; and A is one or more of S or Se. In an X-ray diffraction measurement, the solid electrolyte material has peaks at 2θ = 14.5° ± 0.50°, 16.8° ± 0.50°, 23.9° ± 0.50°, 28.1° ± 0.50°, and 32.5° ± 0.50°, where 2θ is the Bragg angle, and can include glass-ceramics and / or mixed crystalline phases.

The invention discloses a novel thermoelectric material based on N-type BiSbSe3 polycrystal and a preparation method thereof, and belongs to the technical field of thermoelectric material preparation, the thermoelectric material is S solid solution and halogen doped N-type BiSbSe3 polycrystal, the chemical general formula of the thermoelectric material is BiSbSe3-x-y SxMy, M is one of Br, Cl and I, the molar ratio of Bi to Sb to Se to S to M is 1: 1: 3-x-y: x: y, x is greater than or equal to 0.12 and less than or equal to 0.48, and y is greater than or equal to 0 and less than or equal to 0.06. The preparation method comprises the following steps: (1) weighing required raw materials including a Bi elementary substance, a Sb elementary substance, a Se elementary substance, Bi2S3 and a halogen introducing substance, ensuring that the molar ratio of Bi to Sb to Se to S to M is 1: 1: (3-x-y): x: y, M is Br or Cl or I, x is more than or equal to 0.12 and less than or equal to 0.48, y is more than or equal to 0 and less than or equal to 0.06, and mixing the raw materials after weighing; and (2) carrying out high-temperature melting synthesis reaction on the mixed raw materials, and cooling along with a furnace after the reaction is finished, so as to finally obtain the N-type BiSbSe3 polycrystal. The problems that in the prior art, when BiSbSe3 is prepared, a quenching technology is needed for assistance, energy consumption is large, time is long, and part of media are low in safety and not environmentally friendly are solved.

The invention provides a CdZnSeS quantum dot as well as a preparation method and application thereof, and belongs to the technical field of synthesis of nano materials. By optimizing the synthesis process, the long-standing technical problem that'narrow half-peak width (high color purity) 'and'high quantum yield (high luminous efficiency)' are difficult to achieve at the same time in the synthesis of quaternary alloy quantum dots such as CdZnSeS and the like is successfully solved. Meanwhile, the high luminous efficiency (the quantum yield is larger than or equal to 90%) close to the theoretical limit and the extremely high color purity (the red half-peak width lt, 30 nm and green lt, 25 nm) are achieved, the long-standing performance balancing problem in the field is successfully solved, and the obtained quantum dot product is particularly suitable for high-end photoelectric devices with the extreme requirements for color and efficiency.

The present invention relates to solid materials obtained by melt-quenching mixtures of lithium sulfide, boron sulfide, boron oxide, and Se, Te, In, or combinations thereof, thereby forming glassy solids that are suitable for use in, for example, lithium ion and electrochemical cells as conductive coatings and that exhibit great thermal stability.

The invention provides a method of cascade flash (FWF) Joule heating and a system thereof. The FWF Joule heating process subjects an external feedstock in an external vessel to a flash Joule heating process, wherein the flash Joule heating process of the external feedstock causes conversion of an internal feedstock within an internal vessel (the internal vessel is within the external vessel) to a converted material.

This invention relates to semiconductor nanoparticles containing an AgAuTe compound composed of Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles of this invention contain 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticles of this invention improve the light absorption characteristics in the long wavelength region and are appropriately compatible with the near-infrared and short-wave infrared regions. Specifically, the absorption wavelength at the long wavelength side of the absorption spectrum of the semiconductor nanoparticles of this invention is 1200 nm or more. (In the formula, x, y, and z are the atomic numbers of Ag, Au, and Te, 0.25 ≤ z / (x+y) ≤ 1. Furthermore, y / (x+y+z) > 0.10.)

The invention relates to an intermediate band semiconductor material and a preparation method thereof.The chemical formula of the intermediate band semiconductor material is Sr4In2Sb2O5Q5, Q is S or Se, the intermediate band semiconductor material is prepared from reaction raw materials containing the Sr element, the In element, the Sb element, the Q element and the O element through a high-temperature solid-phase reaction method, and the intermediate band semiconductor material has the characteristics of multi-band absorption and large photo-generated current; and the material has relatively high photoelectric response characteristic and excellent photoelectric property.

The application provides a novel chalcogenide compound and a preparation method and application thereof, and the chemical general formula is M 3Bi4 Q 9, wherein M one or two selected from metals Pd and Pt, Q one or two or more combinations of chalcogen elements S, Se and Te. The series of materials belong to the trigonal system, R -3 space group, with a three-dimensional extended crystal structure, and are a novel thermoelectric material. In the structure, M 6 Q 12 ] 12‑ The "hard clusters" are dispersed in Bi- Q The "soft lattice" forms a unique crystal structure of "soft in hard", which has good thermoelectric performance on the basis of ensuring unobstructed electric transport characteristics. Through proper carrier doping, excellent thermoelectric performance can be achieved, and the material is expected to be used in waste heat recovery, thermoelectric refrigeration, thermoelectric power generation and other thermoelectric conversion related fields.

The application provides a two-dimensional bismuth selenide oxide film transfer method and a hetero-integration method thereof, and relates to the technical field of semiconductor materials.The two-dimensional bismuth selenide oxide film transfer method provided by the application realizes lossless and clean transfer of the bismuth selenide oxide film through a composite transfer medium of a TRT layer / a support layer / a stress layer / an oxide layer.In the transfer process, the oxide layer serves as a contact layer to ensure that the bismuth selenide oxide is not damaged in the transfer process, and excellent electrical properties of the bismuth selenide oxide are ensured.The stress layer provides tensile stress, and can realize dry lossless peeling of wafer-level bismuth selenide oxide.The support layer can avoid cracking of the film in the peeling process, realize lossless and clean transfer of the bismuth selenide oxide film, and the bismuth selenide oxide film after transfer is complete and continuous, the surface is flat, the surface roughness is less than 0.65 nm, and the film uniformity is good.

A nanoparticle, a method of manufacturing the nanoparticle, a composition including the nanoparticle, a composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device including the nanoparticle, and an electronic device including the nanoparticle. The nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

High-entropy materials according to the formula Cs2{M}Cl6 are provided. {M} is a combination of at least five metal cations each occupying the M-site of the high-entropy material as a random alloy, e.g., in near-equimolar ratios. The high-entropy materials provided herein includes five or six-element halide perovskite semiconductor single crystals of the Cs2{SnTeReOsIrPt}1Cl6 family and the Cs2{ZrSnTeHfRePt}1Cl6 family. Also provided are methods of generating a high-entropy material, e.g., metal halide perovskite high-entropy semiconductor single crystals, by contacting Cs+ molecules with at least five different [MCl6]2− molecules in a solvent, forming via a self-assembly process the high-entropy material according to the formula Cs2{M}Cl6. The method is conducted at milder temperature (e.g., at a temperature of 100° C. or lower) relative to traditional methods of high-entropy material synthesis which typically requires procedures of over 1,000° C.

The invention relates to an S-region metal two-dimensional material and a preparation method thereof, and belongs to the field of low-dimensional materials. The preparation method comprises the following steps: (1) mixing a metal precursor and S-zone metal salt according to a set proportion, uniformly grinding, then placing between two substrates in a central reaction zone of heating equipment, and controlling the reaction temperature to be 500-1100 DEG C; (2) putting a chalcogen precursor in an upstream area of heating equipment, keeping the distance between the chalcogen precursor and the central reaction area at 0-20cm, introducing inert gas into the heating equipment as carrier gas, and mixing reducing gas according to the type of the chalcogen; and (3) chalcogen steam generated in the upstream area is conveyed to a central reaction area through carrier gas, the chalcogen steam reacts with a mixture of a metal precursor and S-area metal salt at the high temperature of 500-1100 DEG C, and finally the S-area metal two-dimensional material is prepared. The S-region metal two-dimensional material prepared by the method has high crystal quality.

The invention relates to the technical field of new energy storage, in particular to a three-dimensional flower-ball-shaped sulfur molybdenum selenide energy storage material and a preparation method thereof, a mixed ion electrolyte and a magnesium / lithium mixed ion battery. According to the preparation method disclosed by the invention, the MoSSe positive electrode material with the three-dimensional spherical micro-flower structure is prepared through synchronous vulcanization and selenylation of a hydrothermal reaction; meanwhile, deionized water is introduced into an electrolyte with phenylmagnesium chloride as a magnesium source and lithium chloride as a lithium source to serve as an additive, and a water-organic two-phase hybrid electrolyte system is constructed. The electrolyte not only has excellent magnesium metal compatibility, but also can efficiently promote dissociation and diffusion of Mg, and the assembled battery shows rapid charge transfer, low polarization characteristics and highly reversible oxidation-reduction reaction kinetics, so that excellent rapid charge-discharge capability and long cycle life are realized. In addition, according to the technology, raw materials are easy to obtain, the cost is low, the synthesis process is simple, the requirement for equipment is low, and the large-scale production potential is remarkable.

The invention provides a method for preparing a MoS2 (1-x) Se2x nanosheet array and a preparation method of the MoS2 (1-x) Se2x nanosheet array. The preparation method comprises the following steps: placing a raw material and a substrate in a closed environment, wherein the substrate is located above the raw material; wherein the raw materials are elemental sulfur, elemental selenium and molybdenum trioxide; applying a magnetic field in the closed environment, and placing the raw materials in the magnetic field; after the reaction lasts for a preset time, stopping loading the magnetic field; after cooling, the MoS2 (1-x) Se2x nanosheet array growing in situ can be obtained, and the MoS2 (1-x) Se2x nanosheet array is located on the surface of the substrate. Compared with the prior art, the method has the advantages that the used equipment is simpler, the reaction time is obviously shortened, and the preparation efficiency is high.

The invention discloses a method for preparing an edge-rich Janus two-dimensional material through strain-induced self-driving and application of the edge-rich Janus two-dimensional material in electro-catalytic hydrogen evolution, a two-dimensional transition metal sulfide is used as a precursor, and intrinsic tensile strain is introduced into an asymmetric material base plane through a gas-phase atomic layer substitution reaction by utilizing radius difference between different substitution atoms; and when the strain is accumulated to a fracture threshold value, the material spontaneously forms uniform through type nano cracks, so that the asymmetric material with a rich-edge structure is obtained. The method is simple in process, self-driven and controllable construction of the catalyst edge structure is achieved, and complex treatment such as later etching is not needed. According to the prepared material, due to the synergistic effect of a built-in electric field generated by a unique crack structure and an asymmetric structure, a large number of high-activity edge sites are exposed, hydrogen adsorption free energy is optimized, and the material shows remarkably enhanced catalytic activity and stability in a water electrolysis hydrogen evolution reaction. The invention provides a new strategy for design and preparation of an efficient non-noble metal electrocatalyst.

The present invention relates to a semiconductor nanoparticle including a AgAuTe compound containing Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticle is represented by the following formula. The present inventive semiconductor nanoparticle includes 90% by atom or more of the AgAuTe compound. present inventive semiconductor nanoparticle is one, which is improved in light absorption characteristics in a long-wavelength region and which can be suitably correspondent in the near infrared region and the short-wave infrared region, and specifically the absorption edge wavelength on the long-wavelength side of the absorption spectrum The present inventive semiconductor nanoparticle is 1200 nm or more.         [Formula 1]     AgxAuyTez In the formula, x, y, and z are the respective numbers of Ag, Au, and Te atoms, and 0.25 ≤ z / (x + y) ≤ 1 and y / (x + y + z) > 0.10 are satisfied.

The invention relates to the field of thermoelectric materials and semiconductor refrigeration, and discloses a thermoelectric refrigeration material based on a P-type diamond-like carbon-based Cu3SbSe4 crystal and a preparation method of the thermoelectric refrigeration material, the material is an Ag solid solution P-type Cu3SbSe4 crystal material, and the molar ratio of Cu to Ag to Sb to Se is (3-x): x: 1: 4; wherein x is more than or equal to 0.03 and less than or equal to 0.24, and a Bridgman method is adopted. The compact Cu3SbSe4 crystal material is successfully prepared by a method of firstly adjusting a slow cooling temperature zone by optimizing a preparation process and then filling nitrogen to adjust pressure. And the crystal quality and mobility are improved through solid solution Ag, meanwhile, the carrier concentration of the material is maintained, and finally the electrical transport performance of the material is optimized. The P-type Cu3SbSe4 crystal provided by the invention has the advantages of rich source materials, low price, high mechanical strength and the like, a thermoelectric refrigeration device constructed by the P-type Cu3SbSe4 crystal realizes an effective refrigeration effect, and the diamond-like thermoelectric material Cu3SbSe4 has a great potential of becoming a thermoelectric refrigeration material.