127results about "Selenium/tellurium compounds with other elements" patented technology

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention discloses a preparation method of a W and Se co-doped sodium ion sulfide solid electrolyte, which comprises the following steps: weighing raw materials Na2S, Sb2S3, S and WS2 according to a stoichiometric ratio of Na3-xSb1-xWxS4-ySey, grinding and mixing uniformly, 0 < x < = 0.12, and 0 < y < = 0.15; carrying out ball milling to prepare electrolyte precursor powder, and adding a Se raw material according to a stoichiometric ratio in the ball milling process; pressing the electrolyte precursor powder into a sheet; sintering after vacuum sealing; and grinding the sintered product, and then carrying out ball milling again to obtain the product. The invention also discloses the W and Se co-doped sodium ion sulfide solid electrolyte prepared by the method and application. W and Se elements are introduced into Na3SbS4, W < 2 + > is oxidized into W < 6 + > by utilizing the oxidability of S, and the ionic conductivity is improved from 10 <-4 > order of magnitude to 10 <-2 > order of magnitude; therefore, the sodium ion sulfide solid electrolyte has ultrahigh ionic conductivity.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a nickel-cobalt-selenium (Co1-xNixSe2) nano material for electrocatalytic oxidation of ethylene glycol as well as a preparation method and application of the nickel-cobalt-selenium (Co1-xNixSe2) nano material. The material is prepared by a hydrothermal method which comprises the following steps: (1) pouring 20mL of deionized water containing 475.9 mg of CoCl2. 6H2O into a 1mol / L NaOH solution containing 0.32 g of selenium powder to prepare a precursor solution; (2) placing in a stainless steel autoclave with a polytetrafluoroethylene lining, carrying out hydrothermal reaction at 180 DEG C for 18 hours, washing with absolute ethyl alcohol and deionized water, and carrying out vacuum drying at 60 DEG C to obtain a CoSe2 material; and (3) the molar feeding ratio of CoCl2. 6H2O to NiCl2. 6H2O is adjusted, so that the nickel / cobalt ratio x is 0.25, 0.50 or 0.75, and materials with different components, namely Co < 0.75 > Ni < 0.25 > Se < 2 >, Co < 0.50 > Ni < 0.50 > Se < 2 > and Co < 0.25 > Ni < 0.75 > Se < 2 >, are prepared. The series of materials are applied to ethylene glycol oxidation under the alkaline condition, the catalytic performance of Co < 0.50 > Ni < 0.50 > Se < 2 > is optimal, the current density reaches 111 mA cm <-2 > under the electric potential of 1.6 V vs.RHE, the total Faraday efficiency reaches up to 91.4%, and the application prospect in the field of PET plastic recovery is wide.

This invention discloses a core-shell structured lithium-rich manganese-based cathode material with the general formula Li. 1+a Mn x Co y Ni z O 2‑b‑d (XO c ) b X d It has a core-shell structure, with the core being a disordered polyanion-doped lithium-rich manganese-based material, Li. 1+a Mn x Co y Ni z O 2‑b (XO c ) b The outer shell is made of lithium-rich manganese-based material Li, which is doped with gradient non-metallic ions. 1+ a Mn x Co y Ni z O 2‑d X d This application also provides a method for preparing a core-shell structured lithium-rich manganese-based cathode material. The method employs a combination of rapid Joule heating and surface plasma cleaning to prepare the aforementioned core-shell structured lithium-rich manganese-based cathode material, achieving a bulk disordered structure design with polyanion doping and a core-shell structure with surface gradient non-metallic ion doping. Specifically, the bulk polyanions can immobilize transition metal elements to suppress their migration to the lithium layer, reducing harmful consumption of active sites and stabilizing the crystal structure. Furthermore, the strong bond energy between the surface non-metallic elements and the transition metal elements can suppress transition metal dissolution during cycling, reducing irreversible oxygen oxidation and inhibiting harmful phase transitions.

This invention relates to a compound, magnesium gallium selenide (MgHgGa4Se8), and a magnesium gallium selenide (MgHgGa4Se8) infrared nonlinear optical crystal, along with their preparation methods and applications. The compound has the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol. The crystal, also with the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol, lacks a center of symmetry, belongs to the tetragonal crystal system, and has a space group of MgHgGa4Se8. Its cell parameters are α = β = γ = 90°, Z = 1, and its volume is determined by the high-temperature melt method, chemical vapor transport method, or crucible lowering method. This crystal exhibits advantages such as significant nonlinear optical effects, good crystal growth habit, good mechanical properties, high hardness, resistance to breakage and deliquescence, and ease of processing and storage. It can be used to fabricate infrared nonlinear optical devices, which have important applications in optoelectronic warfare, laser communication, and medical fields.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The application provides an inverse perovskite material, a preparation method thereof, a positive electrode material and a sodium ion battery, and belongs to the technical field of electrode materials. The inverse perovskite material has an inverse perovskite structure phase, and a chemical expression formula of the inverse perovskite material is Na x Li y TM z Ch m O n ; wherein 1.5 >= x >= 0.4, 1.6 >= y >= 0.5, 0.8 <= z <= 1.2, 0.8 <= m <= 1.2, and 0.8 <= n <= 1.2; TM is selected from transition metal elements, and Ch is selected from chalcogen elements. The application can improve the first circle discharge specific capacity and the cycle performance of a sodium ion battery prepared by using the inverse perovskite material as a positive electrode material by selecting Na elements, Li elements, transition metal elements, chalcogen elements and oxygen elements and regulating the ratio of the elements.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The application belongs to the field of materials, and discloses a preparation method of high-performance GeTe thermoelectric material, Ge powder, Zr powder, Pb powder, Te powder and Cu2Te powder are respectively taken according to the molar ratio of 0.965-x:0.02:x:0.985:0.015, wherein the value of x is respectively 0, 0.06 and 0.08, then the powders are loaded into a quartz tube for vacuum sealing, and are sequentially subjected to sintering in a box furnace, cold water quenching, annealing in a box furnace, cold water quenching and sintering in a rapid hot-pressing furnace, so as to obtain Zr, Cu2Te and Pb co-doped high-performance GeTe thermoelectric material. The method has simple preparation process, high operability and high repeatability, and the prepared GeTe doped with Zr, Cu2Te and Pb compound has the characteristics of high crystallinity and high density. The method can greatly improve the thermoelectric figure of merit of GeTe thermoelectric material, and the thermoelectric figure of merit is at a high level in the thermoelectric report, so the method has good application prospect.

A stabilized cathode composition is disclosed. The composition includes the formula: AxMChy, wherein x is 1 to 5; y is 2 to 5; A is selected from the group consisting of: Li, Na, K, Mg, and Ca; M is selected from the group consisting of Ni and Co free d−block transition metals or p−block metals or combination of two or more thereof, Ch is selected from the group consisting of S, Se or their combination with O and / or Te.

A method for producing a quantum dot that includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

The solid electrolyte has: first crystallites formed on primary particles and having a first crystal structure; a second crystallite formed in the same primary particle as the first crystallite and having a second crystal structure different from the first crystal structure; and an amorphous phase, the first crystallites and the second crystallites each contain lithium, the first crystal structure is a hexagonal crystal, the second crystal structure is an orthorhombic crystal, and both the crystallite size of the first crystallites and the crystallite size of the second crystallites are 50 nm or less.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi2Se(3-x)Sx, MOS2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

This invention provides a nitrogen-doped carbon composite cobalt-nickel diselenide nanocubic material, its preparation method, and its application in batteries. The invention involves dispersing cobalt salt, nickel salt, and hexadecyltrimethylammonium bromide in a solvent and mixing to obtain solution A; dispersing an organic ligand in the solvent and mixing to obtain solution B; pouring solution A into solution B and aging at room temperature to obtain a nanocubic precursor; then mixing with selenium powder and calcining under a protective atmosphere to obtain the CoNiSe2 / NC composite material. Compared with existing technologies, the synergistic effect of Co and Ni in this invention provides more active sites for the reaction and improves conductivity, resulting in a significant improvement in sodium-ion battery performance. Furthermore, the synthesis in this invention is performed at room temperature, simplifying the process; the porous structure design greatly improves the battery's cycle stability, extends its lifespan, and increases and stabilizes its capacity.

A positive electrode material is disclosed, represented by the formula LiaNixCoyMn1-x-yMbO2-cQc, where 0.2≤a≤1.2, x≥0.6, y>0, b>0, and c>0. M comprises a high-valence cation and Q comprises an anion. The doping of a high-valence cation and an anion in a nickel-rich ternary material stabilizes the bulk structure during lithium deintercalation, reduces side reactions, lattice oxygen release, and transition metal dissolution, and improves cycling stability, high-temperature storage, and rate capability. The outer surface of the positive electrode material may further include a selenium-containing coating layer that reacts with residual lithium compounds and binds released lattice oxygen to suppress electrolyte oxidation. A conductive coating layer may be formed on the selenium-containing layer to prevent direct contact with the electrolyte and inhibit side reactions.

The application provides a thermoelectric material, a preparation method thereof and a thermoelectric device, and the chemical formula of the thermoelectric material is Sn (1‑x‑y) Cu x La y Se, wherein 0<=x<=0.2 and 0 The thermoelectric material provided by the application is doped with lanthanum (La) and / or copper (Cu) to effectively control the polycrystalline tin selenide lattice arrangement and macroscopically, so that the thermoelectric material has high hole carrier concentration and dense crystal defects, thereby improving the ZT value of the thermoelectric material Sn (1‑x‑y) Cu x La y Se, and further improving the thermoelectric conversion efficiency of the thermoelectric material. Meanwhile, the thermoelectric material has a wide temperature range, can effectively utilize heat energy exceeding 200 DEG C, and has good application prospect.

In the present invention, a flexible thermoelectric material for use in a semiconductor device includes silver sulfide nanoparticles and poly(3,4-ethylenedioxythiophene) coated around the silver sulfide nanoparticles, the chemical formula of the silver sulfide nanoparticles being Ag x A flexible thermoelectric material and a manufacturing method thereof are disclosed, which is TeS (wherein x=3.9-4.1) and is used in semiconductor devices in the technical field of thermoelectric materials. In the present invention, poly(3,4-ethylenedioxythiophene) has delocalized π bonds, and therefore has a certain conductive ability and can be used as an organic polymer semiconductor. The manufactured silver sulfide nanoparticles have good thermoelectric performance, and the synergistic effect of electrical conductivity and thermal conductivity is achieved, thereby realizing the effect of improving thermoelectric conversion efficiency. By putting silver sulfide nanoparticles into the organic skeleton of poly(3,4-ethylenedioxythiophene), the structure becomes compact, and the electron transfer rate is improved. The flexible thermoelectric material of the present invention has high electrical conductivity and Seebeck coefficient, and therefore the power coefficient of the material is improved.

Nanoparticles, methods and compositions for making the same, composites, and devices are provided. The nanoparticles include semiconductor nanocrystals comprising zinc, indium, and selenium. In the semiconductor nanocrystal, the molar ratio of indium to selenium (In: Se) is greater than or equal to about 0.1: 1 and less than or equal to about 0.5: 1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

This invention belongs to the field of hollow multi-component nanomaterial preparation technology, specifically disclosing a hollow Cu3NbSe4 nanomaterial, its preparation method, and its application. The microstructure of the nanomaterial is a nanoscale hollow cubic structure. The preparation method includes: (1) dissolving niobium source and selenium source separately in oleylamine solvent by heating for later use; (2) treating the soluble copper source and the niobium source dissolved in (1) in a high-boiling-point organic solvent for deoxygenation and dehydration, and then carrying out a solvothermal reaction; (3) when (2) is heated to a certain temperature, injecting the selenium source dissolved in (1) to carry out a solvothermal reaction, and separating the obtained solid product after the reaction is completed. The synthesis process of this invention is simple, the reaction conditions are mild, and the energy consumption and cost are low; more importantly, it realizes the preparation of hollow Cu3NbSe4 nanomaterial with uniform morphology and size, high crystallinity, and stronger light absorption capacity, and the prepared hollow Cu3NbSe4 shows excellent performance in photocatalytic hydrogen production.

The invention discloses a Cu3SbSe4 nanosheet as well as a preparation method and application thereof, and belongs to the technical field of functional nano material preparation. The preparation method comprises the following steps: dissolving SeO and beta-cyclodextrin in deionized water to form a solution A; ascorbic acid is dissolved in deionized water to form a solution B; under a stirring condition, dropwise adding the solution A into the solution B, and reacting at room temperature to obtain brick-red precipitate; carrying out centrifugal separation on the brick-red precipitate, washing, dispersing in absolute ethyl alcohol, standing to obtain Se NWs, and carrying out vacuum drying for later use; the preparation method comprises the following steps: adding CuCl, SbCl3, Se NWs and anhydrous ethylenediamine into a reaction container, reacting for 2-3 hours under the reflux condition of 120-160 DEG C, filtering and separating the generated black precipitate, washing, and drying in vacuum to obtain the Cu3SbSe4 nanosheet. The preparation process is simple, the reaction condition is mild, the obtained product is uniform in morphology and has a nanosheet structure, and the performance stability of the material applied to the fields of photoelectricity, thermoelectricity and the like can be improved.

The application provides an electrode material preparation method, a battery negative plate and a sodium ion battery. The method comprises the following steps: dissolving dimethyl imidazole and a cobalt salt in a solvent and stirring, and then performing centrifugation, washing and drying operations to obtain a ZIF-67 purple sample; dispersing the ZIF-67 purple sample in a mixed solution of ethanol and deionized water, adding a tris-hydroxymethyl aminomethane, adding a dopamine hydrochloride after the tris-hydroxymethyl aminomethane is completely dissolved, and then performing stirring, centrifugation, washing and drying operations to obtain a precursor; uniformly dispersing the precursor in an ethanol solution, adding a nickel salt solution and stirring, and then performing suction filtration and drying operations to obtain a hollow LDH structure; uniformly grinding the hollow LDH structure with selenium powder, placing the selenium powder in a reaction container, and performing selenization under a first preset condition to obtain an electrode material. The application can overcome the problems of stress and structure collapse caused by the volume change of sodium ions, accelerate the insertion and stripping of sodium ions, and guarantee stability and cycle performance.

A solid electrolyte material includes Li, T, X, and A, where T is at least one of Sb, P, As, Si, Ge, Al, and B; X is one or more halogens or N; and A is one or more of S or Se. In an X-ray diffraction measurement, the solid electrolyte material has peaks at 2θ = 14.5° ± 0.50°, 16.8° ± 0.50°, 23.9° ± 0.50°, 28.1° ± 0.50°, and 32.5° ± 0.50°, where 2θ is the Bragg angle, and can include glass-ceramics and / or mixed crystalline phases.

The invention discloses a novel thermoelectric material based on N-type BiSbSe3 polycrystal and a preparation method thereof, and belongs to the technical field of thermoelectric material preparation, the thermoelectric material is S solid solution and halogen doped N-type BiSbSe3 polycrystal, the chemical general formula of the thermoelectric material is BiSbSe3-x-y SxMy, M is one of Br, Cl and I, the molar ratio of Bi to Sb to Se to S to M is 1: 1: 3-x-y: x: y, x is greater than or equal to 0.12 and less than or equal to 0.48, and y is greater than or equal to 0 and less than or equal to 0.06. The preparation method comprises the following steps: (1) weighing required raw materials including a Bi elementary substance, a Sb elementary substance, a Se elementary substance, Bi2S3 and a halogen introducing substance, ensuring that the molar ratio of Bi to Sb to Se to S to M is 1: 1: (3-x-y): x: y, M is Br or Cl or I, x is more than or equal to 0.12 and less than or equal to 0.48, y is more than or equal to 0 and less than or equal to 0.06, and mixing the raw materials after weighing; and (2) carrying out high-temperature melting synthesis reaction on the mixed raw materials, and cooling along with a furnace after the reaction is finished, so as to finally obtain the N-type BiSbSe3 polycrystal. The problems that in the prior art, when BiSbSe3 is prepared, a quenching technology is needed for assistance, energy consumption is large, time is long, and part of media are low in safety and not environmentally friendly are solved.

The application discloses rhombic nanosheet-shaped copper-doped nickel-cobalt transition metal selenide and a preparation method and application thereof. The preparation method of the material is as follows: after a coordination agent, a surfactant, a nickel salt, a cobalt salt and a copper salt are mixed with a solvent, the mixture is placed in a microwave COD digester to perform a microwave-assisted solvothermal reaction, a copper-doped nickel-cobalt MOFs precursor is obtained; the copper-doped nickel-cobalt MOFs precursor and a selenite are respectively placed in the downstream and the upstream of a tube furnace, and a selenization reaction is performed under a protective atmosphere, and the rhombic nanosheet-shaped copper-doped nickel-cobalt transition metal selenide is obtained. The material has an ultrathin rhombic nanosheet-shaped structure, the surface of the material is rough, the particle size distribution of the material is uniform, and the material has excellent electrochemical performance; when the material is used as an electrode material of a supercapacitor, the capacitance performance can be greatly improved. The preparation process is simple, the conditions are mild, the time consumption is short, and the cost is low, and the preparation process meets the industrial production standards.

The invention provides a CdZnSeS quantum dot as well as a preparation method and application thereof, and belongs to the technical field of synthesis of nano materials. By optimizing the synthesis process, the long-standing technical problem that'narrow half-peak width (high color purity) 'and'high quantum yield (high luminous efficiency)' are difficult to achieve at the same time in the synthesis of quaternary alloy quantum dots such as CdZnSeS and the like is successfully solved. Meanwhile, the high luminous efficiency (the quantum yield is larger than or equal to 90%) close to the theoretical limit and the extremely high color purity (the red half-peak width lt, 30 nm and green lt, 25 nm) are achieved, the long-standing performance balancing problem in the field is successfully solved, and the obtained quantum dot product is particularly suitable for high-end photoelectric devices with the extreme requirements for color and efficiency.

The application discloses a ternary transition metal chalcogenide and application thereof in a terahertz detector, and realizes high-speed, high-sensitivity and room-temperature wide-spectrum terahertz detection under the driving of a strong topological surface state of the ternary transition metal chalcogenide.

This invention belongs to the field of energy catalysis technology, specifically relating to nickel-cobalt-selenium / methylamine-lead-iodine photocatalysts, their preparation and application, and a photocatalytic hydrogen production coupled with photoelectrocatalytic biomass value-added system. Methylamine-lead-iodine and nickel-cobalt-selenium nanosheets are added to a saturated solution of methylamine-lead-iodine, heated to react, cooled, and the precipitate is collected to obtain the nickel-cobalt-selenium / methylamine-lead-iodine photocatalyst. Using nickel-cobalt-selenium as a co-catalyst can significantly improve the photocatalytic HI cracking hydrogen production performance of methylamine-lead-iodine, and a system utilizing I... ‑ / I3 ‑ The redox couple tandem photocatalytic hydrogen production coupled with photoelectrocatalytic biomass value-added system replaces the electrocatalytic oxygen evolution reaction with the photoelectrocatalytic biomass value-added reaction, further improving the efficiency of the reaction system.

The present invention relates to solid materials obtained by melt-quenching mixtures of lithium sulfide, boron sulfide, boron oxide, and Se, Te, In, or combinations thereof, thereby forming glassy solids that are suitable for use in, for example, lithium ion and electrochemical cells as conductive coatings and that exhibit great thermal stability.

The present invention discloses a low thermal conductivity tin telluride-based thermoelectric material and a preparation method thereof. The chemical formula of the tin telluride thermoelectric material is Sn 0.79 Sb 0.06 Ge 0.15 Te - x%CdS, where 0 < x ≤ 6. The prepared Sn 0.79 Sb 0.06 Ge 0.15 Te - 4%CdS material has a thermal conductivity of 2.8 W m ‑1 K ‑1 , and a thermal conductivity of 1.5 W m ‑1 K ‑1 at 874 K. The low thermal conductivity can effectively maintain the temperature difference between the cold end and the hot end of the thermoelectric arm, ensuring the continuous operation of the thermoelectric generator device. Meanwhile, the preparation method of the thermoelectric material described in the present invention also has the advantages of simple process, easy scale-up production and strong practicability.