234results about "Selenium/tellurium compounds with other elements" patented technology

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The invention discloses a lithium-rich manganese-based positive electrode material with a core-shell structure, the general formula of the lithium-rich manganese-based positive electrode material is Li < 1 + a > Mn < x > Co < y > Ni < z > O < 2-b-d > (XOc) X < d >, the lithium-rich manganese-based positive electrode material has the core-shell structure, the core is a lithium-rich manganese-based material Li < 1 + a > Mn < x > Co < y > Ni < z > O < 2-b > (XOc) doped with disordered polyanions, and the shell is a lithium-rich manganese-based material Li < 1 + a > Mn < x > Co < y > Ni < z > O < 2-d > X < d > doped with gradient non-metal ions. The invention also provides a preparation method of the lithium-rich manganese-based positive electrode material with the core-shell structure, and the lithium-rich manganese-based positive electrode material with the core-shell structure is prepared by adopting a combined means of rapid Joule heat treatment and surface plasma cleaning treatment. The polyanion-doped bulk phase disordered structure design and the surface gradient non-metal ion-doped core-shell structure are realized. Wherein the bulk phase polyanions can fix transition metal elements to inhibit migration of the transition metal elements to a lithium layer, harmful consumption of active sites is reduced, and a lattice structure is stabilized. In addition, strong bond energy between surface nonmetal and transition metal elements can inhibit dissolution of transition metal in the circulation process, irreversible oxidation of oxygen is reduced, and generation of harmful phase change is inhibited.

The invention discloses a preparation method of a W and Se co-doped sodium ion sulfide solid electrolyte, which comprises the following steps: weighing raw materials Na2S, Sb2S3, S and WS2 according to a stoichiometric ratio of Na3-xSb1-xWxS4-ySey, grinding and mixing uniformly, 0 < x < = 0.12, and 0 < y < = 0.15; carrying out ball milling to prepare electrolyte precursor powder, and adding a Se raw material according to a stoichiometric ratio in the ball milling process; pressing the electrolyte precursor powder into a sheet; sintering after vacuum sealing; and grinding the sintered product, and then carrying out ball milling again to obtain the product. The invention also discloses the W and Se co-doped sodium ion sulfide solid electrolyte prepared by the method and application. W and Se elements are introduced into Na3SbS4, W < 2 + > is oxidized into W < 6 + > by utilizing the oxidability of S, and the ionic conductivity is improved from 10 <-4 > order of magnitude to 10 <-2 > order of magnitude; therefore, the sodium ion sulfide solid electrolyte has ultrahigh ionic conductivity.

The invention belongs to the technical field of bismuth oxygen selenium nanosheets, and particularly relates to a preparation method of a Bi3O2.5 Se2 nanosheet. According to the preparation method, a chemical vapor deposition method is adopted, Bi2Se3 and KI containing crystal water are respectively used as a precursor and an oxygen supply source to form a mixture, a substrate is placed above the mixture, the mixture is heated under the condition that a carrier gas is introduced for reaction, and the Bi3O2.5 Se2 nanosheet grows on the surface of the substrate to obtain the Bi3O2.5 Se2 nanosheet. According to the preparation method provided by the invention, the uniformity and the crystallization quality of the Bi3O2.5 Se2 nanosheet are remarkably improved, the roughness of a crystal domain combination interface is effectively reduced, and the quality of the crystal domain combination interface is improved; meanwhile, the growth temperature is low, energy consumption and equipment loss are reduced, and the method is more suitable for industrial application.

The invention discloses a wide-spectrum electromagnetic wave modulation method based on silver-based chalcogenide, and belongs to the technical field of electromagnetic wave modulation. According to the invention, the abrupt-change modulation of 1GHz-300THz wide-spectrum electromagnetic waves is realized based on the electronic phase change characteristic of the metal insulator under the triggering of the silver-based chalcogenide under the characteristic external field, and the resonant structure design is combined, so that the functions and applications of electromagnetic wave switching, electromagnetic wave intelligent shielding, dynamic information communication encryption, multi-spectrum camouflage and passive electromagnetic wave protection are realized. The main conception is that a silver-based chalcogenide material with an electronic phase change characteristic is introduced as a sensitive medium, and mutation of electromagnetic wave optical characteristics covering microwave, terahertz and infrared frequency bands caused by electronic phase change of the silver-based chalcogenide is triggered by utilizing characteristic temperature, characteristic pressure and characteristic current. According to the invention, the technical barrier of wide spectrum response and multi-mode dynamic modulation is broken through, and the modulation effect can be cooperatively regulated and controlled by the components of the silver-based chalcogenide material and the structure of the resonant array.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The present invention relates to a semiconductor nanoparticle containing an AgAuTe compound comprising Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticle is represented by the following formula. The semiconductor nanoparticle according to the present invention contains 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticle according to the present invention has an improved light absorption characteristic in the long wavelength range and can suitably support applications in the near-infrared range and the short-wave infrared range. Specifically, the semiconductor nanoparticle according to the present invention has an absorption edge wavelength on the long wavelength side of the absorption spectrum of 1200 nm or greater. AgxAuyTez (In the formula, x, y, and z represent the number of atoms of Ag, Au, and Te, respectively, and 0.25 ≤ z / (x + y) ≤ 1 holds true. In addition, y / (x + y + z) > 0.10 also holds true.)

The invention discloses a nickel-cobalt-selenium (Co1-xNixSe2) nano material for electrocatalytic oxidation of ethylene glycol as well as a preparation method and application of the nickel-cobalt-selenium (Co1-xNixSe2) nano material. The material is prepared by a hydrothermal method which comprises the following steps: (1) pouring 20mL of deionized water containing 475.9 mg of CoCl2. 6H2O into a 1mol / L NaOH solution containing 0.32 g of selenium powder to prepare a precursor solution; (2) placing in a stainless steel autoclave with a polytetrafluoroethylene lining, carrying out hydrothermal reaction at 180 DEG C for 18 hours, washing with absolute ethyl alcohol and deionized water, and carrying out vacuum drying at 60 DEG C to obtain a CoSe2 material; and (3) the molar feeding ratio of CoCl2. 6H2O to NiCl2. 6H2O is adjusted, so that the nickel / cobalt ratio x is 0.25, 0.50 or 0.75, and materials with different components, namely Co < 0.75 > Ni < 0.25 > Se < 2 >, Co < 0.50 > Ni < 0.50 > Se < 2 > and Co < 0.25 > Ni < 0.75 > Se < 2 >, are prepared. The series of materials are applied to ethylene glycol oxidation under the alkaline condition, the catalytic performance of Co < 0.50 > Ni < 0.50 > Se < 2 > is optimal, the current density reaches 111 mA cm <-2 > under the electric potential of 1.6 V vs.RHE, the total Faraday efficiency reaches up to 91.4%, and the application prospect in the field of PET plastic recovery is wide.

The present invention belongs to the field of functional materials. Provided is a method for preparing a zinc-doped cobalt selenide catalyst. The method for preparing a zinc-doped cobalt selenide catalyst comprises: adding a selenium powder to a potassium hydroxide solution, stirring same until the selenium powder is dissolved, then adding deionized water, cobalt nitrate, zinc nitrate and ethylenediaminetetraacetic acid disodium salt to the resulting solution, continuing stirring, putting the finally obtained solution into a polytetrafluoroethylene reaction kettle for a hydrothermal reaction, and after the reaction is finished, cooling the resulting reaction product to room temperature and then washing, drying and grinding same, so as to obtain a zinc-doped cobalt selenide catalyst. In the method for preparing a zinc-doped cobalt selenide catalyst provided by the present invention, during the preparation process, the raw materials are readily available, the reaction conditions are mild, and a zinc-doped cobalt selenide catalyst can be obtained at a relatively low temperature, all of which are beneficial for reducing the production cost. The zinc-doped cobalt selenide catalyst prepared in the present invention has a unique rod-like structure and good electro-catalytic performance, and the obtained electrocatalyst is non-toxic and harmless, and has wide application prospects.

This solid electrolyte has: a first crystallite which is formed into a primary particle and has a first crystal structure; a second crystallite which is formed into the same primary particle as the first crystallite and has a second crystal structure that is different from the first crystal structure; and an amorphous phase. The first crystallite and the second crystallite each contain lithium, the first crystal structure is a hexagonal crystal structure, the second crystal structure is an orthorhombic crystal structure, and the crystallite size of the first crystallite and the crystallite size of the second crystallite are both 50 nm or less.

Methods of flash-within-flash (FWF) Joule heating and the systems thereof. The FWF Joule heating process subjects outer feedstock in an outer vessel to a flash Joule heating process, whereby the flash Joule heating process upon the outer feedstock results in the conversion of inner feedstock within an inner vessel (which inner vessel is within the outer vessel) to a converted material.

This invention discloses a core-shell structured lithium-rich manganese-based cathode material with the general formula Li. 1+a Mn x Co y Ni z O 2‑b‑d (XO c ) b X d It has a core-shell structure, with the core being a disordered polyanion-doped lithium-rich manganese-based material, Li. 1+a Mn x Co y Ni z O 2‑b (XO c ) b The outer shell is made of lithium-rich manganese-based material Li, which is doped with gradient non-metallic ions. 1+ a Mn x Co y Ni z O 2‑d X d This application also provides a method for preparing a core-shell structured lithium-rich manganese-based cathode material. The method employs a combination of rapid Joule heating and surface plasma cleaning to prepare the aforementioned core-shell structured lithium-rich manganese-based cathode material, achieving a bulk disordered structure design with polyanion doping and a core-shell structure with surface gradient non-metallic ion doping. Specifically, the bulk polyanions can immobilize transition metal elements to suppress their migration to the lithium layer, reducing harmful consumption of active sites and stabilizing the crystal structure. Furthermore, the strong bond energy between the surface non-metallic elements and the transition metal elements can suppress transition metal dissolution during cycling, reducing irreversible oxygen oxidation and inhibiting harmful phase transitions.

The present invention provides a general salt-assisted chemical vapor deposition (SA-CVD) synthetic method for the high-yield preparation of 1D hexagonal-phase MxV6S8(M=K, Rb, Cs) and KxV6SySe8-y nanowires. The resulting nanowires exhibit typical metallic properties, which can be used as a good van der Waals contact for achieving high-performance fermi level pinning free transistors. The present synthesis method allows a more systematic investigation of the intrinsic properties of hexagonal-phase V6S8 structures.

The present application relates to a positive electrode active material and a preparation method thereof, a positive electrode sheet and a secondary battery. The positive electrode active material has a composition chemical formula of LixNa1-xAyB1-yO2-nDn, where A is selected from a combination of Ni and Mn, B is selected from at least one non-alkali metal positive-valent element other than Ni, Mn, Co, and S, D is selected from F and / or S, 0.8≤x≤0.92, 0.90≤y<1.0, 0<n≤0.2, and a peak position difference between the Ni—O bond and the Mn—O bond of the positive electrode active material in a Raman spectrum is greater than 80 cm−1 and less than 110 cm−1. The positive electrode active material has high specific capacity and high cycle stability at a high voltage window, and low cost, causing the prepared secondary battery to have high cost performance.

This invention relates to a compound, magnesium gallium selenide (MgHgGa4Se8), and a magnesium gallium selenide (MgHgGa4Se8) infrared nonlinear optical crystal, along with their preparation methods and applications. The compound has the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol. The crystal, also with the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol, lacks a center of symmetry, belongs to the tetragonal crystal system, and has a space group of MgHgGa4Se8. Its cell parameters are α = β = γ = 90°, Z = 1, and its volume is determined by the high-temperature melt method, chemical vapor transport method, or crucible lowering method. This crystal exhibits advantages such as significant nonlinear optical effects, good crystal growth habit, good mechanical properties, high hardness, resistance to breakage and deliquescence, and ease of processing and storage. It can be used to fabricate infrared nonlinear optical devices, which have important applications in optoelectronic warfare, laser communication, and medical fields.

Disclosed in the present disclosure are a P-type bismuth telluride-based material and a method for preparing the P-type bismuth telluride-based material. The P-type bismuth telluride-based material is doped with a rare earth element, and prepared from a rare earth material, a Sb source, a Te source and a Bi source by melting, ball milling and sintering. An outer layer atomic orbital of the rare earth element can greatly improve the energy band structure of a matrix phase. At the same time, a large atomic difference between a rare earth atom and a Sb atom is utilized to provide a mass potential field, enhancing the phonon scattering probability, and reducing lattice thermal conductivity, and the double action of the rare earth element synergistically enhances the thermoelectric performance of the P-type bismuth telluride-based material.

The invention discloses a phase change material, a phase change storage chip, storage equipment and electronic equipment, and belongs to the technical field of semiconductor storage. The phase change material comprises a Ge-Sb-Te phase change base material, and a first doping element and a second doping element which are doped in the Ge-Sb-Te phase change base material. The first doping element comprises an Hf element, and the atomic percent of the first doping element is 1.5%-6.5%; the second doping element comprises at least one of an N element, a C element, an In element and a Ga element, and the atomic percent of the second doping element is 1.0%-5%. The phase-change material has high adhesive force, and enables a phase-change device to have the properties of large read window, long service life and the like.

The invention discloses a preparation method of an ultrathin two-dimensional nanosheet, the ultrathin two-dimensional nanosheet and application of the ultrathin two-dimensional nanosheet, and the preparation method comprises the following steps: (1) mixing a raw material containing a layered solid-phase material I with an intercalator, and carrying out intercalation reaction to obtain an intercalated layered solid-phase material II; and (2) mixing the intercalated layered solid-phase material II obtained in the step (1) with a solvent, and carrying out ultrasonic treatment to obtain the ultrathin two-dimensional nanosheet, the chemical formula of the layered solid-phase material I is MQ2. The material has potential application value in catalysis, energy storage and quantum devices.

The application provides an infrared absorption material based on doping regulation, a preparation method and an infrared detector. By introducing selenium atoms to replace tellurium atoms in a sodium gallium telluride material, the material is doped according to a doping ratio of 1:4 to 1:2 of atomic weight, the energy band structure and optical properties of the material are regulated, a new infrared absorption material is obtained, and the light absorption performance of the material in the infrared wave band is significantly improved. According to the component characteristics of the infrared absorption material, a specific preparation scheme is provided, the preparation is completed by grinding, secondary melting and annealing treatment of the set principle mass of sodium single substance, gallium single substance, tellurium single substance and selenium single substance, and the band gap and absorption intensity are accurately adjusted, and the symmetry and crystal stability of the material are also considered.

The application provides an inverse perovskite material, a preparation method thereof, a positive electrode material and a sodium ion battery, and belongs to the technical field of electrode materials. The inverse perovskite material has an inverse perovskite structure phase, and a chemical expression formula of the inverse perovskite material is Na x Li y TM z Ch m O n ; wherein 1.5 >= x >= 0.4, 1.6 >= y >= 0.5, 0.8 <= z <= 1.2, 0.8 <= m <= 1.2, and 0.8 <= n <= 1.2; TM is selected from transition metal elements, and Ch is selected from chalcogen elements. The application can improve the first circle discharge specific capacity and the cycle performance of a sodium ion battery prepared by using the inverse perovskite material as a positive electrode material by selecting Na elements, Li elements, transition metal elements, chalcogen elements and oxygen elements and regulating the ratio of the elements.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The application belongs to the field of materials, and discloses a preparation method of high-performance GeTe thermoelectric material, Ge powder, Zr powder, Pb powder, Te powder and Cu2Te powder are respectively taken according to the molar ratio of 0.965-x:0.02:x:0.985:0.015, wherein the value of x is respectively 0, 0.06 and 0.08, then the powders are loaded into a quartz tube for vacuum sealing, and are sequentially subjected to sintering in a box furnace, cold water quenching, annealing in a box furnace, cold water quenching and sintering in a rapid hot-pressing furnace, so as to obtain Zr, Cu2Te and Pb co-doped high-performance GeTe thermoelectric material. The method has simple preparation process, high operability and high repeatability, and the prepared GeTe doped with Zr, Cu2Te and Pb compound has the characteristics of high crystallinity and high density. The method can greatly improve the thermoelectric figure of merit of GeTe thermoelectric material, and the thermoelectric figure of merit is at a high level in the thermoelectric report, so the method has good application prospect.

A stabilized cathode composition is disclosed. The composition includes the formula: AxMChy, wherein x is 1 to 5; y is 2 to 5; A is selected from the group consisting of: Li, Na, K, Mg, and Ca; M is selected from the group consisting of Ni and Co free d−block transition metals or p−block metals or combination of two or more thereof, Ch is selected from the group consisting of S, Se or their combination with O and / or Te.

A method for producing a quantum dot that includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

The solid electrolyte has: first crystallites formed on primary particles and having a first crystal structure; a second crystallite formed in the same primary particle as the first crystallite and having a second crystal structure different from the first crystal structure; and an amorphous phase, the first crystallites and the second crystallites each contain lithium, the first crystal structure is a hexagonal crystal, the second crystal structure is an orthorhombic crystal, and both the crystallite size of the first crystallites and the crystallite size of the second crystallites are 50 nm or less.

The invention discloses a composite material and a preparation method thereof, a photoelectric device and a display device, and relates to the technical field of display. The composite material comprises inorganic nanoparticles and a complex, wherein the complex comprises phytic acid and metal ions. According to the composite material provided by the invention, the complex can avoid agglomeration of the inorganic nanoparticles and improve the stability of the inorganic nanoparticles, so that the stability of the device is improved.

The invention relates to the technical field of semiconductor materials, in particular to a tellurium-doped selenide semiconductor material and a preparation method thereof. The chemical formula of the tellurium-doped selenide semiconductor material is FeIn2Se4-xTex, x is more than 0 and less than or equal to 1.5, and the crystal structure is a rhombohedral phase (R-3m). Compared with FeIn2Se4, the tellurium-doped selenide semiconductor material provided by the invention has the advantages that the band gap is changed, the conductivity in the temperature range of 600-750 K is obviously reduced, different semiconductor properties can be provided, and the variety of FeIn2Se4-based materials is enriched.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi2Se(3-x)Sx, MOS2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.