25 results about "Quantum devices" patented technology

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

This invention provides a method for manufacturing quantum devices that can form optical waveguide sections with a desired shape. [Solution] A method for manufacturing a quantum device comprises the steps of: bonding a diamond substrate including a color center to a layer provided on a support substrate; etching the diamond substrate after the bonding step to form a first portion including the color center and a second portion having an inclined surface inclined with respect to the side wall of the first portion; forming a metal film on the inclined surface; and irradiating the side wall of the first portion with laser light reflected by the metal film to cut the first portion at a first position further away from the layer than the color center to form a first optical waveguide portion.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

Systems and methods of the disclosed technology relate to hybrid integrated superconducting systems, superconducting components such as quantum wave shutters, quantum multiplexers, quantum wave memories and / or other disclosed aspects. In one example embodiment, a superconductor Metal-Oxide-Semiconductor (SMOS) chip is disclosed containing one or more superconducting components on a single die, wherein the one or more superconducting components may include a classical computing system or devices, a quantum computing system and / or devices that manipulate and control quantum waves, and a signal conversion subsystem that transforms signals between classical subsystems and quantum subsystems in order to establish a connection between classical and quantum information. Additional aspects relate to quantum devices and their structure(s) such as quantum wave shutters, quantum multiplexers and / or quantum wave memories, among other innovative systems, devices, features and functionality disclosed herein.

The objective is to suppress the indentation of the cover portion that seals the cavity inside the through-electrode in a superconducting wiring substrate. [Solution] The superconducting wiring substrate comprises a substrate in which through holes are formed, through electrodes of superconducting material formed on the inner wall surface of the through holes so as to form a cavity inside the through holes, a lid portion that closes the cavity opening to the surface of the substrate, and legs that support the lid portion from inside the through holes, wherein the thickness of the legs increases radially inward from the inside of the through holes toward the surface of the substrate.

The present disclosure further relates to nanostructures, in particular hybrid nanostructures with patterned growth of various layers for use in nanoscale electronic devices, such as hybrid semiconductor nanostructures with patterned growth and / or deposition of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of nanoscale electronic devices that have not been contaminated by ex-situ processes. One embodiment relates to a method for manufacturing a substrate for growth of crystalline nanostructures, the method comprising the steps of: depositing one or more layers of a crystal growth compatible dielectric material, such as silicon oxide, in a predefined pattern on the surface of a crystal growth compatible substrate to create a predefined etch pattern of said crystal growth compatible material, and selectively etching the substrate surface around said etch pattern to provide at least one under-etched platform which is vertically raised from the etched substrate surface.

The application relates to a two-dimensional van der Waals heterojunction one-step synchronous manufacturing method and device based on controllable micro-explosion, and belongs to the technical field of two-dimensional heterojunction devices and atomic-level precision manufacturing. The application adopts layered nanometer limited microcavities and multi-channel layered liquid injection technology, prepares corresponding material-energy integrated precursors for each layer of the heterojunction, synchronously triggers controllable micro-explosion through nanosecond laser, and realizes in-situ formation of the two-dimensional van der Waals heterojunction with no defects and clean interfaces between layers in one step, and the complex process of traditional layer-by-layer growth + transfer is completely abandoned. The application compresses the heterojunction preparation cycle from tens of hours to within 10 minutes, the interface flatness is Ra<0.3nm, 100% compatible with existing semiconductor production lines, and is suitable for large-scale manufacturing in the fields of advanced logic chips, quantum devices, radio frequency devices and the like.

Disclosed in the present application are a germanium-silicon quantum well material, and a preparation method therefor and the use thereof. The germanium-silicon quantum well material sequentially comprises, from bottom to top: a germanium-silicon substrate layer, a germanium-silicon buffer layer, a first barrier layer, a potential well layer and a second barrier layer, wherein the component contents of germanium and silicon in at least one of the first barrier layer, the potential well layer and the second barrier layer are respectively in a gradual change state, with the gradual change state comprising gradually increasing from bottom to top, gradually decreasing from bottom to top, and / or fluctuating changes. The germanium-silicon quantum well material of the present application can be used in precise quantum devices, and can effectively solve the problem of surface charge accumulation during the grid control process of a germanium-silicon quantum device, thereby optimizing the performance of various germanium-silicon grid control quantum devices.

This invention provides a quantum device that suppresses poor contact between a spring pin and a conductive pad due to temperature changes. [Solution] The quantum device has a qubit and a conductive pad coupled to the qubit, and comprises a qubit substrate having a first thermal expansion coefficient, a first support having a second thermal expansion coefficient, a plurality of second supports provided between the qubit substrate and the first support and having a third thermal expansion coefficient, a plurality of connecting members each connecting the first support and the second support, and a spring pin supported by the second support and in contact with the conductive pad, wherein a control signal for controlling the state of the qubit is supplied to the conductive pad through the spring pin, and the absolute value of the difference between the first thermal expansion coefficient and the second thermal expansion coefficient is smaller than the absolute value of the difference between the first thermal expansion coefficient and the third thermal expansion coefficient. The quantum device can be used, for example, in quantum computing.

This invention belongs to the field of quantum functional materials and nanoelectronic devices, specifically relating to a tantalum diselenide single crystal, its growth method, and its applications. The chemical formula of the tantalum diselenide single crystal is 2H-TaSe2. Its growth method involves mixing Ta and Se raw materials at a molar ratio of 1:2.1~2.5 and sintering to obtain a polycrystalline material. This polycrystalline material is then sealed in a quartz tube with an iodine transport agent and subjected to a gas-phase transport reaction at dual temperatures of 940℃~960℃ and 840℃~860℃. After cooling, a millimeter-sized, smooth-surfaced, and easily peelable tantalum diselenide single crystal is obtained. The superconducting transition temperature of this single crystal is... T c With a charge density wave transition temperature of approximately 90 K and a K ≥ 2.0 K, two-dimensional sheet materials can be prepared by cleaving along the (001) plane, and the resulting sheets retain the properties of the material. T c With superconductivity and charge density wave characteristics of ≥1.8 K, this invention has important application value in the fabrication of low-dimensional quantum devices such as ultrafast optically controlled switches and single-photon detectors.

The application discloses a two-dimensional Ta-S intrinsic topological superconducting material and an electronic structure regulation method thereof. The material is a two-dimensional monolayer crystal of TaS, Ta3S2 and Ta2S, a Dirac point and a Van Hove singularity exist simultaneously near a Fermi level, has intrinsic superconductivity, and has a superconducting transition temperature of 3.731 K-5.799 K; under the action of spin-orbit coupling, the material presents a Z2=1 nontrivial topological state and has a gapless topological edge state. The electronic structure is precisely regulated through components, stress, spin-orbit coupling and electroacoustic coupling. The material is single in composition, stable in structure and can be prepared experimentally, and is suitable for the fields of topological superconductivity and quantum devices.

One or more systems, devices and / or methods of use herein relate to modular quantum devices. According to an embodiment, a device can comprise a first module comprising a first qubit coupled to a first transmission line resonator, and a second module comprising a second qubit coupled to a second transmission line resonator, wherein the first module is embodied on a first chip and wherein the second module is embodied on a second chip.

The application discloses a quantum resource scheduling method and related device, and belongs to the technical field of quantum computing. The method comprises the following steps: dividing quantum devices in a quantum computing platform into a first quantum device set and a second quantum device set based on target capability values of each quantum device in the quantum computing platform; scheduling a target quantum task to the first quantum device; when receiving first information fed back by the first quantum device, scheduling the target quantum task to the second quantum device, so that the second quantum device fine tunes based on parameters obtained by the first quantum device during parameter exploration. By applying the embodiment of the application, the resource cost consumed by quantum tasks that need to be iteratively adjusted is reduced.

Devices, methods, and / or computer-implemented methods are provided to facilitate the formation of self-assembled monolayers on quantum devices. According to embodiments, the device may include qubits formed on a substrate. The device may further include a self-assembled monolayer formed on the qubits.

This application proposes a quantum parametric amplifier pumping device and system, relating to the field of quantum computing. The proposed quantum parametric amplifier pumping device includes a DC module configured to generate a DC signal; a radio frequency (RF) module configured to generate an RF signal; a control module electrically connected to the DC and RF modules, configured to receive instructions from a host computer and control the DC and RF modules; and a synthesis module electrically connected to the DC and RF modules, configured to synthesize the DC and RF signals. This application also proposes a quantum parametric amplifier pumping system including the aforementioned multiple pumping devices, wherein the clock signal for each pumping device in the pumping system is the same signal; and the trigger signal for each pumping device is the same signal. This application solves the problem that the instrument used to output the pump signal is large in size, which is not conducive to working with other quantum devices.

A computer-implemented method for determining a control sequence for performing a sequence of qubit interactions on a plurality of qubits on a quantum device to simulate a quantum many-body Hamiltonian. The method includes determining a sequence of two-qubit interactions based on decomposing a multi-qubit interaction term (120) into a sequence of three interaction terms, where a first interaction term (111) includes a primal operator O, a second interaction term (112) includes an ancillary operator H, and a third interaction term (113) includes a negative of the primal operator, where H and O are each a tensor product of at least two Pauli matrices, and where the first interaction term, the second interaction term, and the third interaction term produced by the decomposition include fewer qubits than the original multi-qubit interaction term. The method further includes iterative decomposition of the interaction terms in terms of the primal and ancillary operators until the multi-qubit interaction term (110) is decomposed into a sequence of two-qubit interaction terms (120). The present invention further relates to computer programs, quantum circuits, quantum devices, and methods for solving problems involving many-body interactions.

This disclosure relates to a shielding element for shielding magnetically sensitive devices, particularly quantum devices, from electromagnetic noise. The shielding element includes a wall segment extending through a through-hole in a first direction, wherein the wall segment has at least 10... 5 The relative electromagnetic conductivity in Henry per meter (H / m), wherein the average width of the opening in a plane perpendicular to the first direction is greater than the average length of the wall segment extending in the first direction.

This invention relates to the field of manufacturing qubits and superconducting devices for quantum computers, and more specifically, to systems based on thin-film Josephson junctions, which can be used after manufacturing to fine-tune the resonant frequency of superconducting qubits containing thin-film Josephson junctions, such as tunable or fixed-frequency qubits, and low-temperature Josephson parametric amplifiers. The essence of this invention is a method for manufacturing superconducting qubits using focused ion beam annealing, comprising manufacturing a thin-film aluminum / alumina / aluminum Josephson junction (2) connected to two plates of a capacitor (3) on a substrate (8); and treating the superconducting qubit (1) by annealing the thin-film aluminum / alumina / aluminum Josephson junction (2). The superconducting qubit (1) is annealed with a Gaussian focused ion beam (13) by localizing the properties of the thin-film aluminum / alumina / aluminum Josephson junction (3). The technical achievement of this invention is to improve the repeatability of resonant frequency tuning for any type of superconducting qubit and to reduce the labor intensity and cost of manufacturing superconducting qubits and superconducting devices for quantum computers.

The present disclosure provides a method and device for measuring parasitic modes in a quantum chip layout, and a storage medium, relating to the field of computer, and particularly to the fields of quantum computing and quantum simulation. The specific implementation scheme is as follows: simulating a quantum chip layout to obtain target eigenmode information of a quantum device in the quantum chip layout and target parasitic mode information of the quantum chip layout; wherein the quantum device is one of a plurality of quantum devices included in the quantum chip layout; obtaining target coupling strength between a target parasitic mode corresponding to the target parasitic mode information of the quantum device and the target parasitic mode information based on the target eigenmode information of the quantum device and the target parasitic mode information of the quantum chip layout; wherein the target coupling strength is used to measure the degree of influence of the target parasitic mode information on a characteristic parameter of the quantum device.

The present invention relates to the field of quantum devices, in particular to a method for reducing impact of quasi-particle defects on bits and the use thereof. In the present invention, for an Xmon bit, on one hand, adaptation optimization is performed on the structure thereof, such that a bit capacitor is designed as a radiation-insensitive structure, which effectively inhibits the generation of quasi-particles at the Josephson junction of the Xmon bit; and on the other hand, infrared shielding technology is used to place a wave-absorbing material in the terahertz frequency band above a quantum chip in a package, which can effectively improve the electromagnetic environment of the quantum chip and achieve good compatibility with various quantum chips. The method can significantly reduce the negative impact of quasi-particle defects on quantum bits.

Aspects of the subject technology relate to systems, methods, and computer-readable media for outfitting wells to include quantum devices and to use quantum devices that are deployed in a wellbore. Apparatus of the present disclosure may be deployed in existing wellbores or may be built into new wellbores. This may help reduce complexity, risk, and cost of installation while increasing reliability as compared to other sensing solutions. As such new forms of quantum sensing technologies may provide a more adaptable and cost-effective solution for deploying sensors in a wellbore or for communicating with equipment located inside of a well.

This invention discloses an MPCVD growth method for peelable polycrystalline diamond with a weakly bonded interface structure, belonging to the field of diamond material preparation technology. By constructing a slow-release interface layer, low-temperature high-methane concentration nucleation, and high-temperature low-methane gradient growth, a diamond film thickness of 100-1000 µm can be achieved. By controlling the cooling stress through a mechanical model and supplementing it with laser cutting or thermal pulse induction, the diamond film can be automatically peeled from the silicon substrate with a peel surface roughness ≤1 nm, requiring no polishing. This process eliminates the need for chemical etching of the silicon wafer, is simple, environmentally friendly, and produces a self-supporting thick diamond film with high thermal conductivity and high surface quality, suitable for applications such as chip heat dissipation, optical windows, and quantum devices.

The application discloses a two-dimensional black carbon nitride quantum material with room-temperature ferromagnetism and a preparation method and application thereof. The carbon nitride quantum material is an amorphous nanosheet with a two-dimensional layered structure and has a graphite-like phase structure with nitrogen vacancies in a carbon-nitrogen skeleton. The single-layer thickness of the carbon nitride quantum material is 4-15 nm, and the length or width is 1-10 microns. The method comprises the following steps: using urea as a raw material, calcining in air, then performing one-time annealing and edge four-time heat treatment, and then performing centrifugal washing with anhydrous ethanol and low-temperature drying to obtain the black carbon nitride quantum material. The preparation method has the characteristics of simple process, easy repetition and low cost. The black carbon nitride prepared by the preparation method has the characteristics of high purity, high magnetization intensity, high Curie temperature and strong room-temperature ferromagnetism, and can be applied to the fields of spin electronic devices, topological quantum devices and magnetic storage.