107 results about "Quantum devices" patented technology

The invention aims to serve the national strategic emerging industry, and discloses a deterministic material synthesis method and a deterministic material synthesis system for pre-nucleation chiral intervention (PNChI for short), which are suitable for one-dimensional or quasi-one-dimensional material systems (such as carbon nanotubes, biomacromolecules and the like) with formalized chiral tags. According to the method, before irreversible closed nucleation of a precursor is completed, deterministic authorization of a target chiral index (n, m) is realized in a controllable time window through at least one engineering intervention mechanism (such as physical field regulation, catalytic interface design, information coding guidance and the like) based on distinguishable physical properties, and consistency is kept in subsequent growth. The system comprises a programmable intervention unit and an intelligent sequence control module, and does not depend on a separation or screening step after nucleation. The single chiral index abundance in the obtained material is greater than or equal to 95%, preferably greater than or equal to 98%. The statistical limitation of traditional chiral control is broken through, a general synthesis normal form from'instruction input 'to'structure output' is constructed, and the method is suitable for high-consistency application scenes such as semiconductors, quantum devices, catalysts and biological recognition.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥90% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

The invention discloses a microscopic imaging system for measuring a second harmonic phase based on polarization interference. In order to overcome the problems of insufficient precision and limited application scene of the traditional interference type second harmonic technology, a material (such as a two-dimensional material single crystal meeting D3h symmetry) with a specific second harmonic polarization response characteristic is creatively adopted as a reference sample, and the reference sample and a sample to be tested construct a coaxial interference light path. The system changes the polarization direction of the reference second harmonic by regulating and controlling the orientation angle of the reference sample, so that a controllable polarization angle difference is formed between the reference second harmonic and a signal to be detected, and implicit phase information is converted into an imaging contrast ratio capable of being quantitatively analyzed. According to the system, in-situ dynamic measurement of the phase can be realized with submicron resolution and high imaging contrast. The method has important application value in the field of characterization of novel semiconductor photoelectric materials and quantum devices, and a standardized technical scheme is provided for defect detection, intrinsic symmetry analysis and domain structure dynamics research of crystals.

Disclosed herein is a computer-implemented quantum error correction method for decoding errors in a quantum computer system. The quantum computer system comprises a decoder apparatus and a register of quantum devices. The method comprises receiving, at the decoder apparatus, syndrome data in an initial state, the syndrome data being representative of an error state of the quantum devices in the register of quantum devices, and graph data representative of a graph comprising a plurality of error nodes and a plurality of check nodes. The error nodes represent error mechanisms that can occur on the register of quantum devices. Each check node is associated with one or more measurements which can be performed on the register of quantum devices. The initial state of the syndrome data indicates a check value of marked or unmarked for each check node based on an outcome of its associated one or more measurements. The method further comprises determining, based on a statistical model of error rates associated with the error mechanisms, an error probability associated with each of the one or more error nodes; and generating modified graph data by iteratively performing linear operations on the graph data and syndrome data based on a current state of the syndrome data to determine an independent error node associated with each marked check node. The method also comprises determining, by the decoder apparatus, a correction for the error state based on the modified graph data and, optionally, based on the error probabilities associated with the one or more error nodes.

A quantum computation system (1) has a quantum device (21), and a control unit (10) that controls the quantum device. The quantum device has a first qubit (100), a second qubit (200), a magnetic flux qubit (300) for coupling that can couple with the first qubit and the second qubit, and a first magnetic flux application unit (340) that applies a magnetic flux to the magnetic flux qubit for coupling. The control unit causes the first magnetic flux application unit to apply a first magnetic flux, which is provided with a first time modulation, during a first period, and apply a second magnetic flux, which is provided with a second time modulation differing from the first time modulation, during a second time period differing from the first time period. This quantum computation system can be used, for example, in quantum computing.

A method for node cluster assignment in a graph includes initializing a plurality of wavefunctions, each one of the plurality of wavefunctions corresponding to nodes of the graph, constructing a plurality of quantum circuits, each corresponding to a graph Laplacian of the graph, evolving the plurality of wavefunctions at the plurality of quantum circuits, each one of the plurality of wavefunctions being evolved to a different time than other ones of the plurality of wavefunctions, measuring evolved states of the plurality of wavefunctions to generate a time-evolved wavefunction vector, and identifying a cluster assignment of a node of the graph based on the time-evolved wavefunction vector.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

Example embodiments provide methods, systems, apparatuses, products and / or the like for reflecting, collecting, entangling, and / or detecting photons generated by quantum objects. In various embodiments a quantum entanglement apparatus is provided. The quantum entanglement apparatus comprising a first reflecting component on a first surface of a first quantum object confinement component, the first reflecting component configured to reflect a first emitted photon emitted by a first quantum object, a first photonic integrated circuit on a first side of the first quantum object confinement component, a first collection component optically coupled to the first photonic integrated circuit, wherein the first collection component is configured to collect the first emitted photon reflected by the first reflecting component, a first detector configured to detect photons traversing a first optical path of the first photonic integrated circuit, and a first filter along the first optical path.

A laser system (1) comprises an in-phase quadrature-phase optical modulator (4) to generate a two-tone, single-sideband, suppressed-carrier optical signal by modulation of an input laser beam, and a fibre Bragg grating (6) to receive and filter the two-tone, single-sideband, suppressed-carrier optical signal output by the in-phase quadrature phase optical modulator (4). The passband of the fibre Bragg grating (6) excludes harmonics of the frequencies of the two tones in the two-tone, single-sideband, suppressed-carrier optical signal output by the in-phase quadrature-phase optical modulator (4). Thus, the system (1) is frequency-agile and produces highly-phase-coherent light beams.

The invention discloses a quantum device, a quantum chip and a quantum computer, and belongs to the technical field of quantum chip manufacturing. The quantum device comprises a substrate of which the surface is provided with quantum bits; the resonant cavity and the quantum bit are arranged on the substrate in a coplanar mode, and the resonant cavity is coupled with the quantum bit and used for reading the quantum state of the quantum bit; wherein the resonant cavity takes the quantum bit as a starting point and spirally extends in a direction far away from the starting point. Through the mode, the quantum device provided by the invention comprises the spiral resonant cavity, and the resonant cavity in the form is smaller in size, namely, the area occupied by the surface of the substrate is smaller, so that more quantum devices such as quantum bits can be integrated on the surface of the substrate with the same size.

In quantum devices with Josephson junctions, the generation of TLS defects and the variation in their characteristics are suppressed. [Solution] A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film, each having a cubic crystal structure, are sequentially formed by epitaxial growth on the (100) or (111) plane of a substrate having a cubic crystal structure. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stack as a mask. After patterning the first superconductor film, the side surfaces of the stack are wet-etched. A second insulator film is formed to cover the wet-etched side surfaces of the stack. After forming the second insulator film, a fourth superconductor film is formed in contact with the third superconductor film. The stack forms a Josephson junction, and the first superconductor film has a lattice constant between that of the substrate and that of the second superconductor film.

This invention provides a method for manufacturing quantum devices that can form optical waveguide sections with a desired shape. [Solution] A method for manufacturing a quantum device comprises the steps of: bonding a diamond substrate including a color center to a layer provided on a support substrate; etching the diamond substrate after the bonding step to form a first portion including the color center and a second portion having an inclined surface inclined with respect to the side wall of the first portion; forming a metal film on the inclined surface; and irradiating the side wall of the first portion with laser light reflected by the metal film to cut the first portion at a first position further away from the layer than the color center to form a first optical waveguide portion.

A computer-implemented quantum error correction method uses a decoder apparatus for decoding errors in a register of quantum devices. The decoder apparatus comprises processing elements (PEs) in a pro

A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

A quantum computing system and associated methods are disclosed. The quantum computing system comprises a quantum processing unit comprising a register of quantum devices with a plurality of connections coupling quantum devices in the register of quantum devices. The quantum computing system further comprises a quantum error correction system configured to identify a Floquet code for the quantum processing unit, identify an inactive edge in the Floquet code, modify the Floquet code to generate a modified Floquet code, receive syndrome data representative of an error state of the register of quantum devices, and determine a correction for the error state by decoding the syndrome data with the modified Floquet code.

Systems and methods of the disclosed technology relate to hybrid integrated superconducting systems, superconducting components such as quantum wave shutters, quantum multiplexers, quantum wave memories and / or other disclosed aspects. In one example embodiment, a superconductor Metal-Oxide-Semiconductor (SMOS) chip is disclosed containing one or more superconducting components on a single die, wherein the one or more superconducting components may include a classical computing system or devices, a quantum computing system and / or devices that manipulate and control quantum waves, and a signal conversion subsystem that transforms signals between classical subsystems and quantum subsystems in order to establish a connection between classical and quantum information. Additional aspects relate to quantum devices and their structure(s) such as quantum wave shutters, quantum multiplexers and / or quantum wave memories, among other innovative systems, devices, features and functionality disclosed herein.

The quantum computer system comprises a decoder and a register of quantum devices. Syndrome data and graph data are received at the decoder, the syndrome data being representative of an error state of

The application discloses a preparation method, a preparation system, a product and application of a selenium-tellurium vanadium material, and belongs to the technical field of material preparation. The application provides a method for preparing a large-area single-layer selenium-tellurium vanadium ternary topological composite material, which comprises the following steps: S1, depositing vanadium oxide on a substrate to obtain a vanadium oxide film; S2, reacting the vanadium oxide film obtained in the step S1 with a selenium source and a tellurium source in an environment containing inert gas and hydrogen, and naturally cooling to obtain a selenium-tellurium vanadium material. The selenium-tellurium vanadium material prepared by the method has the advantages of lower resistivity and higher conductivity, and exhibits unique advantages in the next generation of electronic, energy and quantum devices, so that large-area device manufacturing with high performance and low power consumption can be realized.

The present disclosure provides an execution method of a quantum circuit based on a persistent entanglement distribution protocol, the method comprising: obtaining quantum circuit and quantum cluster information, wherein the quantum cluster information comprises a quantum cluster composed of a plurality of quantum devices, the number of qubits of different quantum devices, the number of communication links between different quantum devices, persistent entanglement distribution protocol information and quantum cluster parameters; performing line segmentation processing on the quantum circuit to obtain a sub-circuit topology graph; processing the quantum cluster information to obtain cluster topology information; generating a line heat map and a cluster topology heat map according to the sub-circuit topology graph and the cluster topology information; performing mapping processing on the line heat map and the cluster topology heat map to obtain target line device mapping information; based on the persistent entanglement distribution protocol information, determining whether there is a remote operation according to the target line device mapping information and from a plurality of quantum sub-lines in the quantum circuit, and performing the remote operation.

Disclosed herein is a computer-implemented quantum error correction method for decoding errors in a quantum computer system. The quantum computer system comprises a decoder apparatus and a register of quantum devices, the decoder apparatus comprising a plurality of processing elements (PEs). The method comprises receiving, at the decoder apparatus, syndrome data representative of an error state of the quantum devices in the register of quantum devices, the syndrome data comprising a plurality of defects, wherein the syndrome data is representable as a decoding hypergraph comprising a plurality of nodes connected by hyperedges representing error mechanisms associated with the plurality of quantum devices. The method further comprises performing, by the plurality of PEs, a clustering algorithm, the clustering algorithm comprising a plurality of steps, and wherein the clustering algorithm grows and merges clusters of nodes based on the number of defects in each cluster until a final cluster state is reached. The method further comprises determining, by the decoder apparatus, a correction for the error state based on the final cluster state; wherein each of the plurality of PEs is associated with a respective batch of nodes of the decoding hypergraph, each batch containing a plurality of nodes. Each PE of the plurality of PEs performs one or more first steps of the plurality of steps of the clustering algorithm. Performing the one or more first steps by each PE comprises determining which nodes of the PE's associated batch of nodes are in a cluster, and performing, in respect of each of the nodes determined to be in a cluster, the one or more first steps of the clustering algorithm.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

The objective is to suppress the indentation of the cover portion that seals the cavity inside the through-electrode in a superconducting wiring substrate. [Solution] The superconducting wiring substrate comprises a substrate in which through holes are formed, through electrodes of superconducting material formed on the inner wall surface of the through holes so as to form a cavity inside the through holes, a lid portion that closes the cavity opening to the surface of the substrate, and legs that support the lid portion from inside the through holes, wherein the thickness of the legs increases radially inward from the inside of the through holes toward the surface of the substrate.

The present invention relate to a plurality of molecular clusters of which a substantial proportion are singly-doped, methods of producing such pluralities of molecular dusters, pluralities of colloidal quantum dots of which a substantial proportion are singly-doped, methods of producing such pluralities of colloidal quantum dots, and quantum devices comprising such pluralities of colloidal quantum dots.

The invention discloses an in-situ packaging mechanism for vacuum chamber sealing and a using method thereof, and relates to the technical field of ultrahigh vacuum packaging. Comprising a sealed cavity, a pipeline on one side of the sealed cavity is communicated with an air exhaust chamber, an H-shaped sealing knife edge flange is installed in the air exhaust chamber and located on a pipeline port, and a stud for guiding the H-shaped light window flange is arranged on the H-shaped sealing knife edge flange; and a driving mechanism is arranged on one side of the air exhaust chamber. Vacuum is pumped to the target vacuum degree through the air pumping chamber, then the hydraulic mechanism is used for pushing the grabbing clamp to press the optical window flange to achieve primary sealing, then vacuum breaking is conducted, an air pumping channel is disassembled, and finally permanent sealing is completed through mechanical fastening. Wherein the design that a conical surface is matched with a spherical surface of a damping universal joint of the hydraulic rod is adopted for the grabbing clamp, self-adaptive aligning can be achieved, and it is ensured that a sealing flange is evenly pressed; the sealing device is convenient to operate, high in sealing reliability and capable of meeting the vacuum packaging requirements of precise quantum devices such as superconducting quantum bits and the like.

Described herein is a fabrication process for creating quantum devices including superconducting qubits, specifically Josephson tunnel junctions and crossovers. The process includes depositing and patterning a first metal layer on a qubit substrate to form the base structure of the circuit. A scaffolding layer is then applied, subsequently patterned and etched to create windows revealing the metal layer below. A thin insulating barrier is introduced within the window followed by the deposition of a second metal layer. This layered structure within the window forms a Josephson junction for the quantum bit. A second larger window serves to connect the Josephson junction to other devices within the circuit. The scaffolding layer is finally removed, creating an air gap in the circuit to isolate the first and second metal layers.

The disclosed subject matter relates to systems and methods for trapping single atoms and molecules using metasurface-generated optical tweezer arrays. A metasurface, comprising a plurality of subwavelength-spaced pixels fabricated from dielectric materials, is configured to generate an optical tweezer array from an incident laser beam in which particles are trapped. The metasurface enables the creation of highly uniform and scalable tweezer arrays with arbitrary geometries, dimensionalities, and trap spacings, supporting array sizes exceeding 10,000 traps. The compact, robust design and high power-handling capabilities of the metasurface facilitate direct trapping of ultracold particles, such as strontium atoms, with a vacuum chamber, and allow for field-deployable quantum devices. The disclosed approach achieves high uniformity in trap intensity and position, enabling advanced quantum applications.

According to the magnetic single crystal thin film, the preparation method and the application thereof, a chemical vapor deposition method is adopted, high-melting-point chromium powder is used as a gas-phase slow-release regulating agent to construct a composite precursor with low-melting-point bismuth oxychloride powder, and key growth parameters such as the raw material proportion, the reaction temperature, the deposition time and the carrier gas flow are regulated and controlled through a system, so that the magnetic single crystal thin film is obtained. Under the condition that the temperature is lower than the traditional process temperature (300-450 DEG C), the Bi2-xCrxTe3 magnetic single crystal film with high crystal quality and consistent crystal orientation height is prepared, the Cr doping concentration of the Bi2-xCrxTe3 magnetic single crystal film is 0.1-2.0 at%, and the minimum thickness of the Bi2-xCrxTe3 magnetic single crystal film can reach 1.1 nm. The low-temperature preparation process provided by the invention has good semiconductor manufacturing compatibility, and a feasible material platform is provided for research of the magnetic topological insulator and application of the magnetic topological insulator in the fields of topological quantum devices, quantum spintronics and the like.

A method for determining operation parameters for one or more quantum dot forming regions of a semiconductor quantum device, the method comprising, identifying a plurality of quantum dot related regions of the semiconductor quantum device, applying voltage to each identified quantum dot related region and measuring resulting current, classifying one or more quantum dot related regions of the semiconductor quantum device as one or more quantum dot forming regions by inputting the measured current at each identified quantum dot related region into a model trained to classify quantum dot related regions of semiconductor quantum devices based on measured current, and determining one or more operation parameters for the one or more quantum dot forming regions based on the current measured at the quantum dot related regions that are classified as quantum dot forming regions.