69 results about "Quantum devices" patented technology

The invention aims to serve the national strategic emerging industry, and discloses a deterministic material synthesis method and a deterministic material synthesis system for pre-nucleation chiral intervention (PNChI for short), which are suitable for one-dimensional or quasi-one-dimensional material systems (such as carbon nanotubes, biomacromolecules and the like) with formalized chiral tags. According to the method, before irreversible closed nucleation of a precursor is completed, deterministic authorization of a target chiral index (n, m) is realized in a controllable time window through at least one engineering intervention mechanism (such as physical field regulation, catalytic interface design, information coding guidance and the like) based on distinguishable physical properties, and consistency is kept in subsequent growth. The system comprises a programmable intervention unit and an intelligent sequence control module, and does not depend on a separation or screening step after nucleation. The single chiral index abundance in the obtained material is greater than or equal to 95%, preferably greater than or equal to 98%. The statistical limitation of traditional chiral control is broken through, a general synthesis normal form from'instruction input 'to'structure output' is constructed, and the method is suitable for high-consistency application scenes such as semiconductors, quantum devices, catalysts and biological recognition.

A quantum computation system (1) has a quantum device (21), and a control unit (10) that controls the quantum device. The quantum device has a first qubit (100), a second qubit (200), a magnetic flux qubit (300) for coupling that can couple with the first qubit and the second qubit, and a first magnetic flux application unit (340) that applies a magnetic flux to the magnetic flux qubit for coupling. The control unit causes the first magnetic flux application unit to apply a first magnetic flux, which is provided with a first time modulation, during a first period, and apply a second magnetic flux, which is provided with a second time modulation differing from the first time modulation, during a second time period differing from the first time period. This quantum computation system can be used, for example, in quantum computing.

A method for node cluster assignment in a graph includes initializing a plurality of wavefunctions, each one of the plurality of wavefunctions corresponding to nodes of the graph, constructing a plurality of quantum circuits, each corresponding to a graph Laplacian of the graph, evolving the plurality of wavefunctions at the plurality of quantum circuits, each one of the plurality of wavefunctions being evolved to a different time than other ones of the plurality of wavefunctions, measuring evolved states of the plurality of wavefunctions to generate a time-evolved wavefunction vector, and identifying a cluster assignment of a node of the graph based on the time-evolved wavefunction vector.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

The invention discloses a quantum device, a quantum chip and a quantum computer, and belongs to the technical field of quantum chip manufacturing. The quantum device comprises a substrate of which the surface is provided with quantum bits; the resonant cavity and the quantum bit are arranged on the substrate in a coplanar mode, and the resonant cavity is coupled with the quantum bit and used for reading the quantum state of the quantum bit; wherein the resonant cavity takes the quantum bit as a starting point and spirally extends in a direction far away from the starting point. Through the mode, the quantum device provided by the invention comprises the spiral resonant cavity, and the resonant cavity in the form is smaller in size, namely, the area occupied by the surface of the substrate is smaller, so that more quantum devices such as quantum bits can be integrated on the surface of the substrate with the same size.

In quantum devices with Josephson junctions, the generation of TLS defects and the variation in their characteristics are suppressed. [Solution] A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film, each having a cubic crystal structure, are sequentially formed by epitaxial growth on the (100) or (111) plane of a substrate having a cubic crystal structure. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stack as a mask. After patterning the first superconductor film, the side surfaces of the stack are wet-etched. A second insulator film is formed to cover the wet-etched side surfaces of the stack. After forming the second insulator film, a fourth superconductor film is formed in contact with the third superconductor film. The stack forms a Josephson junction, and the first superconductor film has a lattice constant between that of the substrate and that of the second superconductor film.

This invention provides a method for manufacturing quantum devices that can form optical waveguide sections with a desired shape. [Solution] A method for manufacturing a quantum device comprises the steps of: bonding a diamond substrate including a color center to a layer provided on a support substrate; etching the diamond substrate after the bonding step to form a first portion including the color center and a second portion having an inclined surface inclined with respect to the side wall of the first portion; forming a metal film on the inclined surface; and irradiating the side wall of the first portion with laser light reflected by the metal film to cut the first portion at a first position further away from the layer than the color center to form a first optical waveguide portion.

A computer-implemented quantum error correction method uses a decoder apparatus for decoding errors in a register of quantum devices. The decoder apparatus comprises processing elements (PEs) in a pro

A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

Systems and methods of the disclosed technology relate to hybrid integrated superconducting systems, superconducting components such as quantum wave shutters, quantum multiplexers, quantum wave memories and / or other disclosed aspects. In one example embodiment, a superconductor Metal-Oxide-Semiconductor (SMOS) chip is disclosed containing one or more superconducting components on a single die, wherein the one or more superconducting components may include a classical computing system or devices, a quantum computing system and / or devices that manipulate and control quantum waves, and a signal conversion subsystem that transforms signals between classical subsystems and quantum subsystems in order to establish a connection between classical and quantum information. Additional aspects relate to quantum devices and their structure(s) such as quantum wave shutters, quantum multiplexers and / or quantum wave memories, among other innovative systems, devices, features and functionality disclosed herein.

The application discloses a preparation method, a preparation system, a product and application of a selenium-tellurium vanadium material, and belongs to the technical field of material preparation. The application provides a method for preparing a large-area single-layer selenium-tellurium vanadium ternary topological composite material, which comprises the following steps: S1, depositing vanadium oxide on a substrate to obtain a vanadium oxide film; S2, reacting the vanadium oxide film obtained in the step S1 with a selenium source and a tellurium source in an environment containing inert gas and hydrogen, and naturally cooling to obtain a selenium-tellurium vanadium material. The selenium-tellurium vanadium material prepared by the method has the advantages of lower resistivity and higher conductivity, and exhibits unique advantages in the next generation of electronic, energy and quantum devices, so that large-area device manufacturing with high performance and low power consumption can be realized.

Disclosed herein is a computer-implemented quantum error correction method for decoding errors in a quantum computer system. The quantum computer system comprises a decoder apparatus and a register of quantum devices, the decoder apparatus comprising a plurality of processing elements (PEs). The method comprises receiving, at the decoder apparatus, syndrome data representative of an error state of the quantum devices in the register of quantum devices, the syndrome data comprising a plurality of defects, wherein the syndrome data is representable as a decoding hypergraph comprising a plurality of nodes connected by hyperedges representing error mechanisms associated with the plurality of quantum devices. The method further comprises performing, by the plurality of PEs, a clustering algorithm, the clustering algorithm comprising a plurality of steps, and wherein the clustering algorithm grows and merges clusters of nodes based on the number of defects in each cluster until a final cluster state is reached. The method further comprises determining, by the decoder apparatus, a correction for the error state based on the final cluster state; wherein each of the plurality of PEs is associated with a respective batch of nodes of the decoding hypergraph, each batch containing a plurality of nodes. Each PE of the plurality of PEs performs one or more first steps of the plurality of steps of the clustering algorithm. Performing the one or more first steps by each PE comprises determining which nodes of the PE's associated batch of nodes are in a cluster, and performing, in respect of each of the nodes determined to be in a cluster, the one or more first steps of the clustering algorithm.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

The objective is to suppress the indentation of the cover portion that seals the cavity inside the through-electrode in a superconducting wiring substrate. [Solution] The superconducting wiring substrate comprises a substrate in which through holes are formed, through electrodes of superconducting material formed on the inner wall surface of the through holes so as to form a cavity inside the through holes, a lid portion that closes the cavity opening to the surface of the substrate, and legs that support the lid portion from inside the through holes, wherein the thickness of the legs increases radially inward from the inside of the through holes toward the surface of the substrate.

Described herein is a fabrication process for creating quantum devices including superconducting qubits, specifically Josephson tunnel junctions and crossovers. The process includes depositing and patterning a first metal layer on a qubit substrate to form the base structure of the circuit. A scaffolding layer is then applied, subsequently patterned and etched to create windows revealing the metal layer below. A thin insulating barrier is introduced within the window followed by the deposition of a second metal layer. This layered structure within the window forms a Josephson junction for the quantum bit. A second larger window serves to connect the Josephson junction to other devices within the circuit. The scaffolding layer is finally removed, creating an air gap in the circuit to isolate the first and second metal layers.

The disclosed subject matter relates to systems and methods for trapping single atoms and molecules using metasurface-generated optical tweezer arrays. A metasurface, comprising a plurality of subwavelength-spaced pixels fabricated from dielectric materials, is configured to generate an optical tweezer array from an incident laser beam in which particles are trapped. The metasurface enables the creation of highly uniform and scalable tweezer arrays with arbitrary geometries, dimensionalities, and trap spacings, supporting array sizes exceeding 10,000 traps. The compact, robust design and high power-handling capabilities of the metasurface facilitate direct trapping of ultracold particles, such as strontium atoms, with a vacuum chamber, and allow for field-deployable quantum devices. The disclosed approach achieves high uniformity in trap intensity and position, enabling advanced quantum applications.

According to the magnetic single crystal thin film, the preparation method and the application thereof, a chemical vapor deposition method is adopted, high-melting-point chromium powder is used as a gas-phase slow-release regulating agent to construct a composite precursor with low-melting-point bismuth oxychloride powder, and key growth parameters such as the raw material proportion, the reaction temperature, the deposition time and the carrier gas flow are regulated and controlled through a system, so that the magnetic single crystal thin film is obtained. Under the condition that the temperature is lower than the traditional process temperature (300-450 DEG C), the Bi2-xCrxTe3 magnetic single crystal film with high crystal quality and consistent crystal orientation height is prepared, the Cr doping concentration of the Bi2-xCrxTe3 magnetic single crystal film is 0.1-2.0 at%, and the minimum thickness of the Bi2-xCrxTe3 magnetic single crystal film can reach 1.1 nm. The low-temperature preparation process provided by the invention has good semiconductor manufacturing compatibility, and a feasible material platform is provided for research of the magnetic topological insulator and application of the magnetic topological insulator in the fields of topological quantum devices, quantum spintronics and the like.

The present disclosure further relates to nanostructures, in particular hybrid nanostructures with patterned growth of various layers for use in nanoscale electronic devices, such as hybrid semiconductor nanostructures with patterned growth and / or deposition of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of nanoscale electronic devices that have not been contaminated by ex-situ processes. One embodiment relates to a method for manufacturing a substrate for growth of crystalline nanostructures, the method comprising the steps of: depositing one or more layers of a crystal growth compatible dielectric material, such as silicon oxide, in a predefined pattern on the surface of a crystal growth compatible substrate to create a predefined etch pattern of said crystal growth compatible material, and selectively etching the substrate surface around said etch pattern to provide at least one under-etched platform which is vertically raised from the etched substrate surface.

The application relates to a two-dimensional van der Waals heterojunction one-step synchronous manufacturing method and device based on controllable micro-explosion, and belongs to the technical field of two-dimensional heterojunction devices and atomic-level precision manufacturing. The application adopts layered nanometer limited microcavities and multi-channel layered liquid injection technology, prepares corresponding material-energy integrated precursors for each layer of the heterojunction, synchronously triggers controllable micro-explosion through nanosecond laser, and realizes in-situ formation of the two-dimensional van der Waals heterojunction with no defects and clean interfaces between layers in one step, and the complex process of traditional layer-by-layer growth + transfer is completely abandoned. The application compresses the heterojunction preparation cycle from tens of hours to within 10 minutes, the interface flatness is Ra<0.3nm, 100% compatible with existing semiconductor production lines, and is suitable for large-scale manufacturing in the fields of advanced logic chips, quantum devices, radio frequency devices and the like.

The invention provides a multi-layer directional quantum stable-phase cavity structure which comprises an inner-layer quantum cavity, a middle-layer structure shell and an outer-layer shielding shell. The inner layer quantum cavity is used for placing a quantum chip or a quantum device; the middle-layer structure shell is coaxially arranged outside the inner-layer quantum cavity in a sleeving manner; the outer layer shielding shell is coaxially arranged outside the middle layer structure shell in a sleeving manner; six-directional structural ribs are arranged on the middle-layer structural shell, so that adjustable and controllable distribution of rigidity in all directions is realized, structural modes of sensitive frequency bands of the quantum device can be effectively dispersed and avoided, and a noise guide channel network can guide incoming mechanical vibration energy to a preset dissipation path, so that the energy dissipation efficiency is improved. And the outer shielding shell adopts a composite shielding layer design, so that high-frequency electromagnetic interference and low-frequency magnetic field noise can be suppressed at the same time, thermal isolation and vibration buffering are realized in combination with an interlayer spacing structure, and a mechanical, electromagnetic and thermal triple noise suppression system is formed.

Disclosed in the present application are a germanium-silicon quantum well material, and a preparation method therefor and the use thereof. The germanium-silicon quantum well material sequentially comprises, from bottom to top: a germanium-silicon substrate layer, a germanium-silicon buffer layer, a first barrier layer, a potential well layer and a second barrier layer, wherein the component contents of germanium and silicon in at least one of the first barrier layer, the potential well layer and the second barrier layer are respectively in a gradual change state, with the gradual change state comprising gradually increasing from bottom to top, gradually decreasing from bottom to top, and / or fluctuating changes. The germanium-silicon quantum well material of the present application can be used in precise quantum devices, and can effectively solve the problem of surface charge accumulation during the grid control process of a germanium-silicon quantum device, thereby optimizing the performance of various germanium-silicon grid control quantum devices.

The invention relates to the technical field of quantum chip manufacturing, in particular to a graph direct writing method and device of a silicon-based atomic-scale quantum device. The method comprises the following steps: firstly, calculating a creep compensation coefficient required for eliminating a creep effect, and then controlling an actual direct writing position of a needle tip on a silicon substrate by adopting the creep compensation coefficient in a needle tip direct writing process so as to form a device pattern on the silicon substrate. In conclusion, the accuracy of needle point direct writing can be improved.

Disclosed herein is a computer-implemented method for controlling the execution of a plurality of distributed processing elements, PEs, in a decoder apparatus of a quantum computer system. The quantum computer system further comprises a register of quantum devices. The method comprises: controlling the plurality of PEs to perform a distributed decoding algorithm according to an execution scheme. The execution scheme identifies which PEs of the plurality of PEs should be executed at different stages of the distributed decoding algorithm. Each PE is identifiable within the execution scheme using one or more indexing variables, wherein each indexing variable of the one or more indexing variables is comprised of one or more bits, with each bit being associated with the execution of one or more PEs of the plurality of distributed PEs.

Methods and systems for estimating localization lengths in hybrid superconductor-semiconductor quantum devices are described. A method for estimating localization lengths in a hybrid superconductor-semiconductor quantum device includes constructing a statistical model for extracting localization lengths based on an implicit description of nonlocal conductance measurements associated with a physical representation of the hybrid superconductor-semiconductor quantum device. The method further includes, using a processor, estimating the localization lengths in the hybrid superconductor-semiconductor quantum device by a joint prior distribution enforcing smoothness over a function of gate voltages and extracted localization lengths for the hybrid superconductor-semiconductor quantum device.

Systems and methods of the disclosed technology relate to hybrid integrated superconducting systems, superconducting components such as quantum wave shutters, quantum multiplexers, quantum wave memories and / or other disclosed aspects. In one example embodiment, a superconductor Metal-Oxide-Semiconductor (SMOS) chip is disclosed containing one or more superconducting components on a single die, wherein the one or more superconducting components may include a classical computing system or devices, a quantum computing system and / or devices that manipulate and control quantum waves, and a signal conversion subsystem that transforms signals between classical subsystems and quantum subsystems in order to establish a connection between classical and quantum information. Additional aspects relate to quantum devices and their structure(s) such as quantum wave shutters, quantum multiplexers and / or quantum wave memories, among other innovative systems, devices, features and functionality disclosed herein.

This invention provides a quantum device that suppresses poor contact between a spring pin and a conductive pad due to temperature changes. [Solution] The quantum device has a qubit and a conductive pad coupled to the qubit, and comprises a qubit substrate having a first thermal expansion coefficient, a first support having a second thermal expansion coefficient, a plurality of second supports provided between the qubit substrate and the first support and having a third thermal expansion coefficient, a plurality of connecting members each connecting the first support and the second support, and a spring pin supported by the second support and in contact with the conductive pad, wherein a control signal for controlling the state of the qubit is supplied to the conductive pad through the spring pin, and the absolute value of the difference between the first thermal expansion coefficient and the second thermal expansion coefficient is smaller than the absolute value of the difference between the first thermal expansion coefficient and the third thermal expansion coefficient. The quantum device can be used, for example, in quantum computing.

A method of characterizing a quantum device, comprising a step of observing by quantum tomography (84) evolutions of an oscillator of the quantum device initially prepared (80) with at least one coherent state and being subsequently subjected (82) to a dynamical interaction, and a subsequent step of using tomographies obtained during the step of observing to characterize a non-linear effect experienced by the oscillator upon performance of the dynamical interaction.

This invention belongs to the field of quantum functional materials and nanoelectronic devices, specifically relating to a tantalum diselenide single crystal, its growth method, and its applications. The chemical formula of the tantalum diselenide single crystal is 2H-TaSe2. Its growth method involves mixing Ta and Se raw materials at a molar ratio of 1:2.1~2.5 and sintering to obtain a polycrystalline material. This polycrystalline material is then sealed in a quartz tube with an iodine transport agent and subjected to a gas-phase transport reaction at dual temperatures of 940℃~960℃ and 840℃~860℃. After cooling, a millimeter-sized, smooth-surfaced, and easily peelable tantalum diselenide single crystal is obtained. The superconducting transition temperature of this single crystal is... T c With a charge density wave transition temperature of approximately 90 K and a K ≥ 2.0 K, two-dimensional sheet materials can be prepared by cleaving along the (001) plane, and the resulting sheets retain the properties of the material. T c With superconductivity and charge density wave characteristics of ≥1.8 K, this invention has important application value in the fabrication of low-dimensional quantum devices such as ultrafast optically controlled switches and single-photon detectors.