71 results about "Quantum devices" patented technology

Analog processors for solving various computational problems are provided. Such analog processors comprise a plurality of quantum devices, arranged in a lattice, together with a plurality of coupling devices. The analog processors further comprise bias control systems each configured to apply a local effective bias on a corresponding quantum device. A set of coupling devices in the plurality of coupling devices is configured to couple nearest-neighbor quantum devices in the lattice. Another set of coupling devices is configured to couple next-nearest neighbor quantum devices. The analog processors further comprise a plurality of coupling control systems each configured to tune the coupling value of a corresponding coupling device in the plurality of coupling devices to a coupling. Such quantum processors further comprise a set of readout devices each configured to measure the information from a corresponding quantum device in the plurality of quantum devices.

A single crystal synthetic CVD diamond material comprising: a growth sector; and a plurality of point defects of one or more type within the growth sector, wherein at least one type of point defect is preferentially aligned within the growth sector, wherein at least 60% of said at least one type of point defect shows said preferential alignment, and wherein the at least one type of point defect is a negatively charged nitrogen-vacancy defect (NV⁻).

Multiple substrates that carry quantum devices are coupled to provide quantum mechanical communicators therebetween, for example, using superconducting interconnects, vias, solder and/or magnetic flux. Such may advantageously reduce a footprint of a device such as a quantum processor.

A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μm which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.

Analog processors for solving various computational problems are provided. Such analog processors comprise a plurality of quantum devices, for instance qubits, arranged in a lattice, together with a plurality of coupling devices. The analog processors further comprise bias control systems each configured to apply a local effective bias on a corresponding quantum device. A set of coupling devices in the plurality of coupling devices is configured to couple nearest-neighbor quantum devices in the lattice. Another set of coupling devices is configured to couple next-nearest neighbor quantum devices. The analog processors further comprise a plurality of coupling control systems each configured to tune the coupling value of a corresponding coupling device in the plurality of coupling devices to a coupling. Such quantum processors further comprise a set of readout devices each configured to measure the information from a corresponding quantum device in the plurality of quantum devices.

Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device comprises a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval; a memory cell which is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons; and a control gate which is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.

Systems, devices, articles, methods, and techniques for advancing quantum computing by removing unwanted interactions in one or more quantum processor. One approach includes creating an updated plurality of programmable parameters based at least in part on a received value for the characteristic magnetic susceptibility of the qubit in the at least one quantum processor, and returning the updated plurality of programmable parameters. Examples programmable parameters include local biases, and coupling values characterizing the problem Hamilton. Also, for example, a quantum processor may be summarized as including a first loop of superconducting material, a first compound Josephson junction interrupting the first loop of superconducting material, a first coupler inductively coupled to the first loop of superconducting material, a second coupler inductively coupled to the first loop of superconducting material, and a second loop of superconducting material proximally placed to the first loop of superconducting material inductively coupled to the first coupler and the second coupler.

The invention discloses an OpenVPN security communication method and communication system based on quantum keys. The communication method is implemented between a server and at least one client whichserve as two parties of OpenVPN network communication. The communication system comprises the server and the at least one client which serve as the two parties of OpenVPN network communication, the two communication particles are each matched with a quantum device, and the corresponding quantum keys are stored in the quantum devices of the two communication parties to be used for achieving identity authentication and data encryption transmission between the two communication parties. According to the communication method and communication system, the advantages of the quantum keys and a quantum distribution network are fully utilized, the quantum keys are taken as the authentication keys and the session keys in OpenVPN system expanding, the session key updating frequency is high, and the security communication performance of an existing OpenVPN is greatly improved.

The invention discloses a method for controllable generation of quantum dots or quantum wires, which belongs to the field of preparation of low-dimensional quantum materials. The method comprises the following steps: arranging a substrate for growing the quantum dots or the quantum wires in solution with dissolved the quantum dots or the quantum wires and arranging an electrode which is in contact with the lower surface of the substrate on the bottom surface of the substrate; applying voltage between the solution and the electrode for forming a steady electric field so as to enable quantum dot or quantum wire material in the solution to settle in the position where the electrode is located on the substrate under the action of electric field force of the steady electric field and grow the quantum dots or the quantum wires on the substrate in the position corresponding to the electrode; and adjusting the position of the electrode to control the growth positions of the quantum dots or the quantum wires on the substrate. The method is simple to operate and good in controllable effect; and according to the method disclosed by the invention, controllable growth in any quantum dot or quantum wire position can be realized, and a foundation is laid for processing and manufacturing of quantum devices.

The invention discloses a Stunnel communication method and a Stunnel communication system based on a quantum key. The Stunnel communication system includes a Stunnel server and a Stunnel client respectively as Stunnel network communication parties, the communication parties are respectively matched with a quantum device, and corresponding quantum keys are stored in the quantum devices of the communication parties for identity authentication and data encryption transmission between the communication parties. The Stunnel communication system provided by the invention uses a quantum random numbergenerator to generate a true random number to participate in generating a quantum key, and then replaces the key in SSL in the Stunnel with a quantum key, thereby greatly enhancing the encryption effect and improving the confidentiality. The server uses a quantum key management server to transmit the quantum key to the Stunnel server, and the client uses a quantum key card to transmit the quantumkey to the Stunnel client. The design of the quantum key card allows mobile clients to enjoy the security brought by encryption of the quantum key.

The invention discloses a quantum point material structure. The structure comprises a gallium arsenide GaAs substrate (10) for supporting the whole quantum point material structure, an epitaxial layer structure growing on the GaAs substrate (10) and comprising buffer layers (11,12,13) and an InAs quantum point layer (14), wherein the buffer layer comprises a GaAs buffer layer (11), an InxGa(1-x)As order variable buffer layer (12) and an InyGa(1-y)As single component layer (13) which grows in order on the substrate; and the InAs quantum point layer (14) grows on the InyGa(1-y)As single component layer (13). The invention further discloses a growth method of the quantum point material structure. With the inventive method, the large-area quantum points with ordered distribution are prepared by using the simple preparation process, the process is simple without special treatment of the substrate before growth and is completely compatible with the molecular beam epitaxy process. Additionally, the method is suitable for the bulk production of self-organization ordered-arrangement quantum point array material, which is significant for the quantum point material to be applied to the future quantum devices.

The invention discloses a device and method for manufacturing a micro-nano structure, belonging to the field of micro-nano manufacture. The device mainly comprises a ballpoint pen, a plating solution, a ballpoint pen rack, an atomic force micro detection system, a cathode platform, a micro motion workbench and a trace electricity power supply, wherein the ballpoint pen containing the plating solution is fixed on the ballpoint pen rack, the ballpoint pen rack is integrally connected with the atomic force micro detection system and is used for roughly positioning and accurately positioning the atomic force micro detection system, the cathode platform and the micro motion workbench are fixedly connected and are spaced by using an insulation material, a ballpoint pen refill is connected with the anode of the trace electricity power supply, and the cathode platform is connected with the cathode of the trace electricity power supply. In the invention, by the application of the trace electricity power supply and a carbon nanotube, atomic assembly, atomic group sedimentation and three-dimensional micro-nano molding become easier, simpler and more precise. The device and the corresponding molding method have certain significances to precise manufacture of micro-nano devices, micro-nano electromechanical progress and development of quantum devices.

The invention discloses a periodic bowl-shaped structural template and a preparation method thereof. The preparation method comprises the following steps: depositing a silicon dioxide mask layer on a substrate, spin-coating photoresist on the silicon dioxide mask layer, preparing a periodic micro/nano photoresist lattice pattern, depositing a thin metal film on the photoresist structure, peeling to obtain a metal hole array pattern, forming a bowl-shaped array structure of the silicon dioxide by adopting a wet etching technology by taking the metal hole array structure as a mask, and finally, removing the metal mask. The periodic bowl-shaped structural template prepared by the preparation method is large in area and uniform and complete in structure, has a very good application prospect in the aspects of preparation of patterned structures, photonic crystals, surface roughening, surface flocking and micro/nano devices and the like, can be widely applied to the aspects of LEDs (Light-Emitting Diodes), solar batteries, photonic crystals, quantum devices and the like, or serves as an etching mask layer of the substrate material, or is used for the manufacturing of other micro/nano structures.

An apparatus and method designed for generating and detecting reflected Terahertz waves using high-transition temperature (Tc) superconducting quantum devices (Josephson junctions) is described and the spectral response of reflected Terahertz radiation is mathematically analyzed to positively identify explosives strapped on a human or animal subject. This embodiment is well-suited for high traffic physical locations currently under surveillance such as security check points and also venues demanding significantly less obtrusive surveillance such as revolving entry doors, moving walkways, and entry gates of an airplane. The apparatus and method detects explosives through clothing without raising privacy concerns.

A higher degree of interactions between qubits is realizable. This disclosure generally relates to devices, and architectures for quantum instruments comprising quantum devices and techniques for operating the same. Systems and processors for creating and using higher degree interactions between qubits may be found herein. Higher order interactions include interactions among three or more qubits.Methods for creating and using higher degree interactions among three or more qubits on a quantum processor may be found herein.

The present disclosure further relates to nanostructures, in particular hybrid nanostructures with patterned growth of various layers for use in nanoscale electronic devices, such as hybrid semiconductor nanostructures with patterned growth and/or deposition of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of nanoscale electronic devices that have not been contaminated by ex-situ processes. One embodiment relates to a method for manufacturing a substrate for growth of crystalline nanostructures, the method comprising the steps of: depositing one or more layers of a crystal growth compatible dielectric material, such as silicon oxide, in a predefined pattern on the surface of a crystal growth compatible substrate to create a predefined etch pattern of said crystal growth compatible material, and selectively etching the substrate surface around said etch pattern to provide at least one under-etched platform which is vertically raised from the etched substrate surface.

The present invention proposes an all-liquid quantum tunneling effect device, comprising more than two liquid metal droplets as electric conductors, a container carrying liquid metal droplets, an insulating or semi-insulating liquid for separating each liquid metal droplet, and an electrode; the size of the liquid metal droplet is 0.1nm-20cm. The invention also proposes a preparation method of an all-liquid quantum tunneling effect device. This all-liquid quantum tunneling effect device has changed the existing concept and technical category of the existing solid quantum tunneling effect device, and for the first time provided a device with a new concept of an all-liquid quantum tunneling effect device, introducing a unique conductive liquid The deformable properties and good bonding of both metals and conventional liquids as insulating or semi-insulating materials extend the scope of conventional quantum devices. It can be a shape-adaptive combination of various structures, and the type of liquid metal and the concentration of the solution can be adjusted, so it can reflect more complex quantum tunneling behavior.