153 results about "Quantum devices" patented technology

The invention discloses an atom manipulation construction method of an artificial quantum structure on a two-dimensional layered material substrate, which comprises the following steps of: under an ultrahigh vacuum condition, evaporating and depositing noble metal atoms and non-metal atoms on the surface of a two-dimensional layered material by a molecular beam epitaxy method, and applying a voltage pulse through a tip of a scanning tunneling microscope to construct the artificial quantum structure on the two-dimensional layered material substrate. The method comprises the following steps: accurately lifting and placing monodisperse noble metal atoms, applying a voltage pulse through a tip of a scanning tunneling microscope, accurately placing a single non-metal atom near the noble metal atoms, accurately lifting and placing the single noble metal atom and the non-metal atom for multiple times, and carrying out N-type and P-type doping. And construction of an atomic-scale precise artificial quantum structure is realized. According to the method, accurate positioning, lifting, carrying, placing and other operations of the monatomic on the surface of the two-dimensional layered material are carried out, the problems of controllable control and structure construction of the monatomic on the surface of the two-dimensional layered material are solved, preparation of the diatomic PN junction is achieved, and a feasible scheme is provided for accurate design of quantum devices with atomic scales.

The invention aims to serve the national strategic emerging industry, and discloses a deterministic material synthesis method and a deterministic material synthesis system for pre-nucleation chiral intervention (PNChI for short), which are suitable for one-dimensional or quasi-one-dimensional material systems (such as carbon nanotubes, biomacromolecules and the like) with formalized chiral tags. According to the method, before irreversible closed nucleation of a precursor is completed, deterministic authorization of a target chiral index (n, m) is realized in a controllable time window through at least one engineering intervention mechanism (such as physical field regulation, catalytic interface design, information coding guidance and the like) based on distinguishable physical properties, and consistency is kept in subsequent growth. The system comprises a programmable intervention unit and an intelligent sequence control module, and does not depend on a separation or screening step after nucleation. The single chiral index abundance in the obtained material is greater than or equal to 95%, preferably greater than or equal to 98%. The statistical limitation of traditional chiral control is broken through, a general synthesis normal form from'instruction input 'to'structure output' is constructed, and the method is suitable for high-consistency application scenes such as semiconductors, quantum devices, catalysts and biological recognition.

Quantum devices with two-sided or single-sided dual-purpose Majorana zero mode (MZM) junctions are described. An example quantum device comprises at least one superconducting island configurable to support at least one pair of Majorana zero modes (MZMs). The quantum device further includes a first conductor configurable to be coupled with at least one MZM of the at least one pair of MZMs, where the first conductor is configurable to be in at least one of a grounded state or a Coulomb blockade state. The quantum device further includes a second conductor configurable to be coupled with the at least one MZM of the at least one pair of MZMs, where the second conductor is configurable to be in at least one of a grounded state or a Coulomb blockade state.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥90% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

The invention discloses a layout design method and device, electronic equipment and a readable storage medium, and relates to the technical field of chips.The layout design method comprises the steps that a quantum device construction list and a quantum device connection list are obtained; on the basis of the quantum device construction list, instantiating various types of quantum device models; on the basis of each instantiated quantum device model, constructing each quantum device corresponding to the quantum device construction list; based on the quantum device connection list, the quantum device construction list, a connection model and a device anchor point rule, determining a starting point anchor point coordinate and an end point anchor point coordinate corresponding to each connection line relation in the quantum device connection list; the device anchor point rule comprises a device static anchor point rule and a dynamic anchor point calculation script; and on the basis of the starting point anchor point coordinates and the terminal point anchor point coordinates corresponding to the connection line relationships, carrying out connection line path generation on the constructed quantum devices to obtain a quantum chip layout of the quantum devices.

The invention discloses a microscopic imaging system for measuring a second harmonic phase based on polarization interference. In order to overcome the problems of insufficient precision and limited application scene of the traditional interference type second harmonic technology, a material (such as a two-dimensional material single crystal meeting D3h symmetry) with a specific second harmonic polarization response characteristic is creatively adopted as a reference sample, and the reference sample and a sample to be tested construct a coaxial interference light path. The system changes the polarization direction of the reference second harmonic by regulating and controlling the orientation angle of the reference sample, so that a controllable polarization angle difference is formed between the reference second harmonic and a signal to be detected, and implicit phase information is converted into an imaging contrast ratio capable of being quantitatively analyzed. According to the system, in-situ dynamic measurement of the phase can be realized with submicron resolution and high imaging contrast. The method has important application value in the field of characterization of novel semiconductor photoelectric materials and quantum devices, and a standardized technical scheme is provided for defect detection, intrinsic symmetry analysis and domain structure dynamics research of crystals.

Quantum teleportation is essential for many quantum information technologies, including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single-photon detectors and off-the-shelf optics, we achieve conditional quantum teleportation of time-bin qubits at the telecommunication wavelength of 1536.5 nm. We measure teleportation fidelities of ≥9% that are consistent with an analytical model of our system, which includes realistic imperfections. To demonstrate the compatibility of our setup with deployed quantum networks, we teleport qubits over 22 km of single-mode fiber while transmitting qubits over an additional 22 km of fiber. Our systems, which are compatible with emerging solid-state quantum devices, provide a realistic foundation for a high-fidelity quantum Internet with practical devices.

Disclosed herein is a computer-implemented quantum error correction method for decoding errors in a quantum computer system. The quantum computer system comprises a decoder apparatus and a register of quantum devices. The method comprises receiving, at the decoder apparatus, syndrome data in an initial state, the syndrome data being representative of an error state of the quantum devices in the register of quantum devices, and graph data representative of a graph comprising a plurality of error nodes and a plurality of check nodes. The error nodes represent error mechanisms that can occur on the register of quantum devices. Each check node is associated with one or more measurements which can be performed on the register of quantum devices. The initial state of the syndrome data indicates a check value of marked or unmarked for each check node based on an outcome of its associated one or more measurements. The method further comprises determining, based on a statistical model of error rates associated with the error mechanisms, an error probability associated with each of the one or more error nodes; and generating modified graph data by iteratively performing linear operations on the graph data and syndrome data based on a current state of the syndrome data to determine an independent error node associated with each marked check node. The method also comprises determining, by the decoder apparatus, a correction for the error state based on the modified graph data and, optionally, based on the error probabilities associated with the one or more error nodes.

The present disclosure describes electron-photon and electron-phonon interactions in 2D material systems. In some embodiments, novel entangled states are implemented. Such entangled states may involve the superposition of electronic and phononic modes in these materials. The states may be utilized to realize the transduction of quantum information and sensing. In an aspect, the present disclosure may be a quantum sensor having a single-phonon emitter configured to emit a single phonon. A phononic transducer is configured to receive the emitted single phonon from the single-phonon emitter and propagate the single phonon. A phonon detector is configured to detect an arrival of the propagated single phonon received from the phononic transducer.

The invention discloses a preparation method of an ultrathin two-dimensional nanosheet, the ultrathin two-dimensional nanosheet and application of the ultrathin two-dimensional nanosheet, and the preparation method comprises the following steps: (1) mixing a raw material containing a layered solid-phase material I with an intercalator, and carrying out intercalation reaction to obtain an intercalated layered solid-phase material II; and (2) mixing the intercalated layered solid-phase material II obtained in the step (1) with a solvent, and carrying out ultrasonic treatment to obtain the ultrathin two-dimensional nanosheet, the chemical formula of the layered solid-phase material I is MQ2. The material has potential application value in catalysis, energy storage and quantum devices.

The invention belongs to the field of two-dimensional material preparation, and particularly relates to a dry transfer method of a corner two-dimensional material. On one hand, introduction of impurities is avoided by adopting a plurality of organic polymers for assistance through a splitting step mechanism; on the other hand, by means of the mechanism that the two-dimensional material slides on the h-BN interface and does not exceed the plane geometrical shape of the h-BN interface, the two-dimensional material is locked on the h-BN geometrical interface through laser cutting, the probability that the two-dimensional material wrinkles, bubbles and slides in the transfer process is remarkably reduced, meanwhile, the internal stress of a system is reduced, and the mechanical performance of the system is improved. Therefore, the accuracy of the transfer angle of the corner two-dimensional material is improved; and the phenomena of slippage, traction and the like do not occur between the corner two-dimensional materials, lattice distortion is also weakened, and the quality of the corner two-dimensional materials is further improved. According to the method, reliable technical support is provided for constructing a high-quality strong-correlation physical platform, and the method can be widely applied to the fields of novel quantum devices and the like.

A quantum computation system (1) has a quantum device (21), and a control unit (10) that controls the quantum device. The quantum device has a first qubit (100), a second qubit (200), a magnetic flux qubit (300) for coupling that can couple with the first qubit and the second qubit, and a first magnetic flux application unit (340) that applies a magnetic flux to the magnetic flux qubit for coupling. The control unit causes the first magnetic flux application unit to apply a first magnetic flux, which is provided with a first time modulation, during a first period, and apply a second magnetic flux, which is provided with a second time modulation differing from the first time modulation, during a second time period differing from the first time period. This quantum computation system can be used, for example, in quantum computing.

A method for node cluster assignment in a graph includes initializing a plurality of wavefunctions, each one of the plurality of wavefunctions corresponding to nodes of the graph, constructing a plurality of quantum circuits, each corresponding to a graph Laplacian of the graph, evolving the plurality of wavefunctions at the plurality of quantum circuits, each one of the plurality of wavefunctions being evolved to a different time than other ones of the plurality of wavefunctions, measuring evolved states of the plurality of wavefunctions to generate a time-evolved wavefunction vector, and identifying a cluster assignment of a node of the graph based on the time-evolved wavefunction vector.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

Example embodiments provide methods, systems, apparatuses, products and / or the like for reflecting, collecting, entangling, and / or detecting photons generated by quantum objects. In various embodiments a quantum entanglement apparatus is provided. The quantum entanglement apparatus comprising a first reflecting component on a first surface of a first quantum object confinement component, the first reflecting component configured to reflect a first emitted photon emitted by a first quantum object, a first photonic integrated circuit on a first side of the first quantum object confinement component, a first collection component optically coupled to the first photonic integrated circuit, wherein the first collection component is configured to collect the first emitted photon reflected by the first reflecting component, a first detector configured to detect photons traversing a first optical path of the first photonic integrated circuit, and a first filter along the first optical path.

This quantum device comprises: a plurality of quantum bit elements each including a diamond crystal layer, which has a central part and extension parts connected to the central part and extending in 2n directions (n is an integer of 2 or more) from the central part, and a color center formed in the central part; input optical waveguides which are respectively connected to n end sections of the extension parts and transmit light that enters the color center; output optical waveguides which are respectively connected to the n end sections of the extension parts and transmit photons emitted by the color center; and a splitter connected to an output waveguide of a first quantum bit element among the plurality of quantum bit elements and an output waveguide of a second quantum bit element among the plurality of quantum bit elements.　

A laser system (1) comprises an in-phase quadrature-phase optical modulator (4) to generate a two-tone, single-sideband, suppressed-carrier optical signal by modulation of an input laser beam, and a fibre Bragg grating (6) to receive and filter the two-tone, single-sideband, suppressed-carrier optical signal output by the in-phase quadrature phase optical modulator (4). The passband of the fibre Bragg grating (6) excludes harmonics of the frequencies of the two tones in the two-tone, single-sideband, suppressed-carrier optical signal output by the in-phase quadrature-phase optical modulator (4). Thus, the system (1) is frequency-agile and produces highly-phase-coherent light beams.

The invention discloses a quantum device, a quantum chip and a quantum computer, and belongs to the technical field of quantum chip manufacturing. The quantum device comprises a substrate of which the surface is provided with quantum bits; the resonant cavity and the quantum bit are arranged on the substrate in a coplanar mode, and the resonant cavity is coupled with the quantum bit and used for reading the quantum state of the quantum bit; wherein the resonant cavity takes the quantum bit as a starting point and spirally extends in a direction far away from the starting point. Through the mode, the quantum device provided by the invention comprises the spiral resonant cavity, and the resonant cavity in the form is smaller in size, namely, the area occupied by the surface of the substrate is smaller, so that more quantum devices such as quantum bits can be integrated on the surface of the substrate with the same size.

The invention relates to an epitaxial growth method of a shallow diamond quantum sensor with in-situ impurity regulation and control, which belongs to the technical field of semiconductor material growth and application, realizes efficient removal of in-situ nitrogen and silicon impurities by introducing transition metal in the growth process, and realizes preparation of a shallow NV color center by combining a short-time secondary growth technology. The method comprises the specific steps of polishing and cleaning a substrate, growing a high-quality diamond epitaxial layer, growing a nitrogen-doped thin-layer diamond and the like. According to the method, the non-toxic, volatile and cheap metal source solution is selected and loaded into the MPCVD cavity through hydrogen or metal particles are placed in situ, so that in-situ removal of impurities such as nitrogen and silicon is achieved. And a new scheme is provided for preparing the SCD meeting the application requirements of semiconductor devices, quantum devices and optical devices. Meanwhile, the method using the transition metal source has the advantages of low cost and good effect, and is beneficial to large-area development.

A quantum computing system and a method of performing a quantum error correction code are disclosed. Syndrome data is received representative of an error state of a plurality of quantum devices. Occurrence of a runtime trigger event is determined. A hypergraph modification rule associated with the runtime trigger event is retrieved from a decoding hypergraph modification map data structure comprising a plurality of predefined hypergraph modification rules. A decoding hypergraph is modified in accordance with the hypergraph modification rule to generate a modified decoding hypergraph. A correction for the error state is determined by decoding the syndrome data with the modified decoding hypergraph.

Within the layout of the first surface in the flip-chip configuration, a bump restriction region is mapped according to a set of bump placement constraints, wherein the first bump placement constraint specifies a range of allowable distances between bumps in the layout of the first surface and qubit chip components, and wherein the second bump placement constraint specifies a range of allowable distances between bumps in the layout of the second surface in the flip-chip configuration and qubit chip components. Conductive material is deposited outside the bump restriction region to form bumps, wherein the bumps include conductive structures that electrically couple signals between the first surface and the second surface and are positioned according to the set of bump placement constraints.

In quantum devices with Josephson junctions, the generation of TLS defects and the variation in their characteristics are suppressed. [Solution] A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film, each having a cubic crystal structure, are sequentially formed by epitaxial growth on the (100) or (111) plane of a substrate having a cubic crystal structure. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stack as a mask. After patterning the first superconductor film, the side surfaces of the stack are wet-etched. A second insulator film is formed to cover the wet-etched side surfaces of the stack. After forming the second insulator film, a fourth superconductor film is formed in contact with the third superconductor film. The stack forms a Josephson junction, and the first superconductor film has a lattice constant between that of the substrate and that of the second superconductor film.

The invention discloses a periodic target electromagnetic scattering characteristic rapid simulation method based on a quantum neural network, and the method comprises the following steps: selecting finite periodic arrays with different structure gaps and array scales in a certain range, and generating a data set through employing a sub-global basis function method; selecting a classic neural network technology, designing a quantum neural network unit, and building a hybrid quantum neural network model; training and testing the hybrid quantum neural network model, and storing parameters in the model in an optimal state; and generating a sub-global basis function by using a sub-global basis function method, predicting an expansion coefficient of each unit in the periodic structure by using the trained mixed quantum neural network model, and finally calculating to obtain surface current distribution of the whole target periodic structure. According to the method, the hybrid neural network technology is utilized to avoid consuming a lot of time to generate the reduced impedance matrix, the consumed time can be effectively reduced while the accuracy is ensured, and the efficiency advantage brought by quantum equipment in the future is expected to be obtained.

This invention provides a method for manufacturing quantum devices that can form optical waveguide sections with a desired shape. [Solution] A method for manufacturing a quantum device comprises the steps of: bonding a diamond substrate including a color center to a layer provided on a support substrate; etching the diamond substrate after the bonding step to form a first portion including the color center and a second portion having an inclined surface inclined with respect to the side wall of the first portion; forming a metal film on the inclined surface; and irradiating the side wall of the first portion with laser light reflected by the metal film to cut the first portion at a first position further away from the layer than the color center to form a first optical waveguide portion.

A computer-implemented quantum error correction method uses a decoder apparatus for decoding errors in a register of quantum devices. The decoder apparatus comprises processing elements (PEs) in a pro

A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

A quantum computing system and associated methods are disclosed. The quantum computing system comprises a quantum processing unit comprising a register of quantum devices with a plurality of connections coupling quantum devices in the register of quantum devices. The quantum computing system further comprises a quantum error correction system configured to identify a Floquet code for the quantum processing unit, identify an inactive edge in the Floquet code, modify the Floquet code to generate a modified Floquet code, receive syndrome data representative of an error state of the register of quantum devices, and determine a correction for the error state by decoding the syndrome data with the modified Floquet code.

Methods and systems for interfacing with quantum devices are disclosed. A multiband input signal is divided into input signal components. Each input signal component is modified to apply an frequency and / or phase shift and is then provided to a quantum device.