Quantum dot material structure and its growth method

Abstract

The invention discloses a quantum point material structure. The structure comprises a gallium arsenide GaAs substrate (10) for supporting the whole quantum point material structure, an epitaxial layer structure growing on the GaAs substrate (10) and comprising buffer layers (11,12,13) and an InAs quantum point layer (14), wherein the buffer layer comprises a GaAs buffer layer (11), an InxGa(1-x)As order variable buffer layer (12) and an InyGa(1-y)As single component layer (13) which grows in order on the substrate; and the InAs quantum point layer (14) grows on the InyGa(1-y)As single component layer (13). The invention further discloses a growth method of the quantum point material structure. With the inventive method, the large-area quantum points with ordered distribution are prepared by using the simple preparation process, the process is simple without special treatment of the substrate before growth and is completely compatible with the molecular beam epitaxy process. Additionally, the method is suitable for the bulk production of self-organization ordered-arrangement quantum point array material, which is significant for the quantum point material to be applied to the future quantum devices.

Description

Technical field [0001] The invention relates to the technical field of low-dimensional semiconductor structure quantum dot material positioning growth and process control, in particular to a quantum dot material structure that is positioned and grown by in-situ technology and a growth method thereof. Background technique [0002] Due to their unique electronic structure and density of states, semiconductor quantum dot low-dimensional nanostructured materials exhibit excellent optoelectronic properties, and have very important application prospects in the fields of nanoelectronics and photonics in the future. The theory predicts that quantum dot lasers have better performance than quantum well lasers in many aspects, such as higher gain, lower threshold current, higher quantum efficiency and better thermal stability. In addition, by using the "tunneling" effect of electrons in quantum dots, the number of electrons entering or leaving the quantum dot can be precisely controlled to ...

AI Technical Summary

Problems solved by technology

Although this method avoids the pollution and defects caused by the substrate treatment before growth, the control of the position distribution of quantum dots by this method is not ideal.

In addition, the quantum dots positioned on the dislocation grid also affect the photoelectric performance of the quantum dots due to the short distance from the dislocations.

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