21 results about "Quantum dot lasers" patented technology

The application discloses a kind of high-power high-speed direct modulation quantum dot laser and preparation method thereof, N-type GaAs substrate is sent into MBE chamber to remove the surface oxidation layer, N-type GaAs contact layer is sequentially grown on the N-type GaAs substrate of surface oxidation layer removal, N-type AlGaAs restriction layer, first undoped GaAs waveguide layer, multilayer quantum dot active region, second undoped GaAs waveguide layer, P-type AlGaAs restriction layer, P-type GaAs contact layer, to obtain high-power high-speed direct modulation quantum dot laser from this. The method greatly improves the number of quantum dot layers by precisely controlling the growth conditions of quantum dots and the thickness of the spacer layer, while controlling the thickness of the quantum dot active region, thereby increasing the differential gain of quantum dots, carrier injection efficiency and greatly improving the direct modulation rate and light output power of quantum dot laser.

The invention provides a quantum dot DFB laser based on a substrate buried grating. The quantum dot DFB laser comprises a substrate; the buffer layer is formed on the substrate; the N-type doped lower coating layer is formed on the buffer layer; the quantum dot active region is formed on the N-type doped lower coating layer; the P-type doped upper coating layer is formed in the quantum dot active region; and the N-type doped lower coating layer comprises a buried grating structure layer. The invention further provides a preparation method of the quantum dot DFB laser based on the substrate buried grating, and the flow ratio and the growth rate of the five-family elements and the three-family elements are optimized when the grating layer grows and the grating layer is buried. Through the design that the grating is buried on the lower substrate, the problem of damage of high temperature to a quantum dot active region in a traditional process is reduced, meanwhile, the limiting layer epitaxial design is optimized, the vertical divergence angle of a light field is reduced, the optical fiber coupling loss is reduced, and multi-mode oscillation is reduced.

The present invention relates to a photonic circuit for generating squeezed light, comprising: an electron-pumping source (SPS) that pumps electrons at a constant rate, a distributed optical-feedback quantum dot laser component (QDL), the laser component being electrically coupled to the silent pump and integrated into a semiconductor substrate, the laser component having a predefined threshold current. The silent pump is configured to inject, into the laser component, a supply current with an intensity proportional to the intensity of the predefined threshold current by a factor between 1 and 5, so as to make the laser component generate a phase-squeezed or amplitude-squeezed light beam.

The invention provides an optical frequency comb modulation system for a quantum dot mode-locked laser, which comprises a quantum dot mode-locked laser, a light splitting element, an optical feedback path and an optical measurement path, and is characterized in that the quantum dot laser is internally provided with a laser cavity, and two ends of the quantum dot laser can output laser; one end of the quantum dot laser is connected with the input end of the light splitting element, the output end of the light splitting element is connected with the input end of the optical feedback path and the input end of the optical measurement path, and a first deviation controller and a back reflector which are matched with each other are arranged in the optical feedback path. The quantum dot laser, the light splitting element, the first deviation controller and the back reflector are connected through optical fibers or waveguides. The method has the advantages that tuning of the modulation state of the optical frequency comb can be achieved, the distribution range of the FM comb is compressed, and the working range of the AM comb is widened.

The invention discloses an electric pumping colloidal quantum dot laser of a silicon-based substrate, and belongs to the technical field of semiconductor optoelectronic devices. The laser is provided with a doped silicon substrate, a lower buffer layer, a lower carrier transport layer, a colloidal quantum dot gain layer, an upper carrier transport layer, an upper protection layer, a waveguide structure layer, an upper buffer layer and an electrode system which are stacked from bottom to top. A conductive optical limiting structure is constructed on the surface of the doped silicon substrate and has conductivity in the vertical direction, and the effective refractive index of the conductive optical limiting structure under the lasing wavelength is remarkably lower than that of the colloid quantum dot gain layer. In addition, a DFB grating structure is arranged in the transparent waveguide structure layer, and a planarization buried layer design is adopted to adapt to a solution method preparation process. The problems of silicon-based interface light leakage, parasitic waveguide effect and process compatibility are solved, and low-cost, low-threshold and high-stability laser output can be realized on the silicon substrate without wafer bonding.

The application discloses a method for preparing a quantum dot laser light source by coupling of periodically arranged optical materials. By modulating the resonance coupling between a photonic crystal microcavity and a quantum dot light-emitting wavelength, a continuous spectrum laser light source is realized. The preparation method of the photonic crystal microcavity is as follows: a PDMS stamp with a special periodic arrangement shape is prepared in advance, HPC material is spin-coated on the light-emitting electrode side of a bottom-emitting quantum dot device, the prepared PDMS stamp is used to press a periodic arrangement pattern, then optical material is spin-coated and deposited on the pattern, and the HPC material is washed away with a solvent after spin-coating, so that a photonic crystal microcavity with a certain periodic air hole is obtained. The modulation of the optical properties of the photonic crystal microcavity can be realized by adjusting the PDMS stamp template. The method can construct a photonic crystal microcavity with a specific energy band structure on the light-emitting side of the bottom-emitting quantum dot device, so that a high-brightness and high-quality laser light source is obtained.

The invention discloses an InAs quantum dot laser and an InAs quantum dot laser preparation method, and belongs to the technical field of semiconductor lasers. The energy band and the waveguide of the epitaxial structure are jointly designed, the epitaxial structure adopts the multi-layer stacked lower gradient waveguide layer and the multi-layer stacked upper gradient waveguide layer, and the refractive indexes of the gradient waveguide layers are distributed in a gradient manner, so that continuous and convergent deflection can be performed on light rays in the gradient waveguide layers, and the light rays can be continuously deflected in the gradient waveguide layers. Light emitted from the end face of the gradient waveguide layer has a velocity component closer to the normal direction, so that the divergence angle of a light beam is reduced; and meanwhile, the epitaxial structure adopts the multi-layer stacked InAs quantum dot active region, so that the density of the quantum dots is multiplied, and the energy band of the InAs quantum dot active region is optimized, thereby increasing the optical gain volume and reducing the threshold current density. And only the epitaxial structure is designed, and the method can be compatible with the existing process, so that the process complexity and cost are reduced.

The invention provides a quantum dot laser, and a quantum dot laser bandwidth and nonlinear performance coordinated regulation and control method, device and equipment. The method comprises the following steps: constructing the quantum dot laser into a nonlinear resonant subsystem driven by bias current; applying a bias current to the quantum dot laser; the quantum dot laser is set at a cooperative bias working point by regulating and controlling the magnitude of the bias current, and the cooperative bias working point is configured to cooperatively improve the relaxation oscillation frequency of the laser and control the nonlinear effect.

The present invention relates to a photonic circuit for generating compressed light, comprising: a constant-rate electron pumping (SPS) source, a distributed optical feedback quantum dot (QDL) laser component, the laser component being electrically coupled to the silent pump and integrated into a semiconductor substrate, the laser component having a predefined threshold current. The silent pump is configured to inject, into the laser component, a supply current with an intensity proportional to the intensity of the predefined threshold current by a factor between 1 and 5, so as to cause the laser component to generate a beam of light compressed in phase or amplitude. Figure for the abstract: Figure 1

The application discloses a kind of electrically pumped colloidal quantum dot lasers of silicon-based substrate, belong to the technical field of semiconductor optoelectronic devices.The laser is stacked from bottom to top with doped silicon substrate, lower buffer layer, download carrier transport layer, colloidal quantum dot gain layer, upper carrier transport layer, upper protective layer, waveguide structure layer, upper buffer layer and electrode system.Doped silicon substrate surface is constructed with conductive optical confinement structure, the structure has vertical direction conductivity, and its effective refractive index at lasing wavelength is significantly lower than colloidal quantum dot gain layer.In addition, DFB grating structure is provided in transparent waveguide structure layer, and flat buried layer design is used to adapt solution method preparation process.The application solves the problems of silicon-based interface light leakage, parasitic waveguide effect and process compatibility, and can realize low-cost, low-threshold and high-stability laser output on silicon substrate without wafer bonding.

The present invention discloses a quantum dot laser-based photon microwave signal generator and acquisition method. The generator includes a tunable semiconductor laser, a quantum dot laser, an aspheric lens, a beam splitter, a neutral density plate, a fiber Bragg grating, an isolator, a beam splitter, and a photodetector. The output light of the tunable semiconductor laser is injected into the quantum dot laser. The single-cycle oscillation light output by the quantum dot laser is focused by the aspheric lens and then split into two parts by the beam splitter. One part of the light is filtered by the fiber Bragg grating and fed back into the cavity of the quantum dot laser. The other part of the light is focused by the isolator and the aspheric lens in turn and then split into two parts by the beam splitter. One part is the output photon microwave signal, and the other part is converted into an electrical signal by the photodetector for microwave signal quality detection and adjustment. The present invention solves the problems of wide linewidth and high phase noise of light-injected semiconductor lasers, significantly improving the quality of photon microwaves.

The invention specifically discloses a surface high-power high-speed directly-modulated quantum dot laser and a preparation method thereof, an N-type GaAs substrate is sent into an MBE cavity to remove an oxide layer on the surface, and an N-type GaAs contact layer, an N-type AlGaAs limiting layer, a first undoped GaAs waveguide layer, a multi-layer quantum dot active region, a second undoped GaAs waveguide layer and a P-type AlGaAs limiting layer are sequentially grown on the N-type GaAs substrate with the oxide layer on the surface removed. And a P-type GaAs contact layer is formed, so that the surface high-power high-speed directly-modulated quantum dot laser is obtained. According to the method, the number of layers of the quantum dots is greatly increased by accurately controlling the growth conditions of the quantum dots and the thickness of the spacer layer, and the thickness of the active area of the quantum dots is controlled at the same time, so that the differential gain and the carrier injection efficiency of the quantum dots are increased, and the direct modulation rate and the light output power of the quantum dot laser are greatly improved.

The invention relates to the technical field of warehouse management, and discloses an intelligent component warehouse management system and method based on digital twinning, and the system comprises a stress management unit, a conduction management unit, a change management unit, a compensation management unit and a twinning management unit. Time domain-frequency domain cross characteristics of temperature and humidity data and vibration data can be accurately captured, the non-linear interaction of multiple physical fields and a lattice distortion management graph generated by a conduction management unit are prevented from being omitted, the distortion risk of a quantum dot active area can be recognized in advance, a phonon energy management spectrum of each quantum dot generated by a change management unit, and the quantum dot active area distortion risk can be recognized in advance. According to the quantum dot laser, the dynamic change of lattice distortion can be tracked, the spectral shape compensation signal, generated by the compensation management unit, of the reverse direction of each quantum dot can be offset, the central wavelength drift and the twin management instruction generated by the twin management unit can be offset, management lag can be avoided, the damage probability of the quantum dot laser is reduced, and the warehouse management reliability is improved.

The application discloses a preparation method of a near-infrared vertical cavity surface laser with low threshold and high gain based on weakly confined quantum dots, and belongs to the technical field of quantum dot lasers. A CdS shell layer is grown on the weakly confined double-tapered CdSe quantum dots, and the thickness of the CdS shell layer is controlled to be 2 layers by controlling the injection amount of dodecanethiol; the CdSe / CdS quantum dots are spin-coated on the high-reflection surface of two Bragg reflectors (DBRs); and the surfaces coated with the quantum dots are close to each other and are spliced to form a vertical cavity surface laser. The vertical cavity surface laser constructed by taking the weakly confined double-tapered hexahedral CdSe / CdS quantum dots as deep red gain material has deep red / near-infrared laser emission of 720 nm, an extremely low laser threshold of 11.23 µJ / cm 2 and an extremely wide gain bandwidth of 670-730 nm.

The invention relates to the technical field of laser gain material synthesis, in particular to a low-threshold quantum dot laser gain film and a preparation method thereof. Comprising the following steps: in an inert gas atmosphere, preparing a zinc oleate precursor solution, a cadmium oleate precursor solution, a tri-n-octylphosphine-selenium precursor solution and a tri-n-octylphosphine-sulfur precursor solution; preparing a mixed solution on site, including a mixed solution A, a mixed solution B and a mixed solution C; preparing the core-shell quantum dots by adopting a step-by-step thermal injection method, namely preparing a core, a continuous gradient layer and a protective layer; purifying the core-shell quantum dots by using a purifying agent, and performing post-treatment to form a dispersion liquid; and spin-coating the dispersion liquid to a substrate by adopting a one-step spin-coating method, and annealing to form the low-threshold quantum dot laser gain film. The quantum dot core-shell material has the advantages that the prepared quantum dot core-shell material has a gradient energy level gradient structure, the quantum dots can obtain a smooth constraint potential barrier from the core to the shell through the gradient structure, non-radiative recombination of the quantum dots is improved, and the laser performance of the material is improved, namely the ASE threshold value of the quantum dots is reduced.

The application provides a quantum dot laser-based true random number generation method, comprising the following steps: simulating a chaotic laser signal generated by a quantum dot laser; setting a sampling step h to extract light intensity data of the chaotic laser signal, smoothing the signal by using a Savitzky-Golay filter to obtain an original light intensity data sequence; performing differential derivation on the original light intensity data sequence to generate a preliminary extreme value output sequence; performing symmetric quantization on the extreme value output sequence in a maximum value descending order sorting and a minimum value ascending order sorting manner to generate a preliminary binary quantization sequence; enhancing randomness of the preliminary binary quantization sequence; performing NIST randomness testing on a final high-quality random number sequence to output a high-quality true random number sequence meeting a testing quality requirement. The application has the beneficial effects that the true random number generator can realize the combination of high speed, high stability, small size and optical applicability.

The application relates to the technical field of warehouse management, and discloses an intelligent component warehouse management system and method based on digital twinning, which comprises a stress management unit, a conduction management unit, a change management unit, a compensation management unit and a twinning management unit. The stress management tensor generated by the stress management unit can accurately capture the time-domain-frequency-domain cross characteristics of temperature and humidity data and vibration data, avoids missing the nonlinear interaction of multiple physical fields, the lattice distortion management graph generated by the conduction management unit can identify the distortion risk of a quantum dot active region in advance, the phonon energy management spectrum of each quantum dot generated by the change management unit can track the dynamic change of lattice distortion, the spectrum shape compensation signal generated by the compensation management unit in the reverse direction of each quantum dot can offset the central wavelength drift, and the twinning management instruction generated by the twinning management unit can avoid management lag, reduce the damage probability of a quantum dot laser, and improve the reliability of warehouse management.

The invention discloses a 2-micron waveband indium arsenide / indium phosphide quantum dot laser active region structure and a preparation method thereof. Comprising the steps of providing an indium phosphide substrate and performing high-temperature treatment on the surface; sequentially and epitaxially growing an indium-aluminum-arsenic layer matched with an indium phosphide lattice, an indium-aluminum-gallium-arsenic layer and an indium-gallium-arsenic layer serving as a quantum dot growth substrate layer; growing a multi-period quantum dot active layer on the substrate, wherein each period comprises an indium arsenide quantum dot layer, an indium gallium arsenic layer, an indium aluminum gallium arsenic layer and an indium gallium arsenic layer; and finally, sequentially growing an indium aluminum gallium arsenic layer, an indium aluminum arsenic layer, an indium phosphide light limiting layer and an indium gallium arsenic contact layer at the upper part. By adopting indium gallium arsenic as a quantum dot growth substrate and combining a quantum dot embedded quantum well structure, the light-emitting wavelength of the quantum dot is red-shifted to a 2-micron wave band; the carrier capture efficiency is improved through the energy band gradient, and the lasing efficiency is enhanced; and uniform nucleation of quantum dots is promoted by using an indium gallium arsenic growth interface, formation of quantum short lines is inhibited, and a reliable basis is provided for preparation of a 2-micron waveband quantum dot laser.

This invention discloses a high-power liquid quantum dot laser amplifier. After the pump beam enters the amplifier, it is split into optical path I and optical path II. Optical path I and optical path II then simultaneously reach a second liquid quantum dot laser medium. Optical path I, along the incident direction of the pump beam, sequentially comprises: a beam splitter, a cylindrical mirror, a first liquid quantum dot laser medium, a reflective blazed grating, a tunable total reflection mirror, an output coupling mirror, a total reflection mirror, an aperture, a collimating lens, and a second liquid quantum dot laser medium. Optical path II, along the incident direction of the pump beam, sequentially comprises: a beam splitter, two mirror-mounted right-angle prisms, a collimating lens, a focusing lens, and a second liquid quantum dot laser medium. The method provided by this invention is stable and universal, achieving stable high-power tunable liquid quantum dot laser output, effectively overcoming the shortcomings of existing organic dye molecular lasers, such as easy deactivation of the gain medium and low operational stability at high power.

The invention relates to the technical field of semiconductor materials, in particular to an InAs / GaAs quantum dot epitaxial layer structure and a preparation method thereof, and the method comprises the following steps: carrying out the surface deoxidation of a GaAs substrate; growing a GaAs buffer layer on the GaAs substrate of which the surface is deoxidized, cooling the GaAs substrate on which the GaAs buffer layer is grown, and growing InAs quantum dots to obtain a GaAs substrate on which the InAs quantum dots are grown; a cover layer and a GaAs protection layer are sequentially grown on the GaAs substrate on which the InAs quantum dots are grown, the cover layer is InGaAs or AlGaAs, and an InAs / GaAs quantum dot epitaxial layer structure is obtained, the InGaAs cover layer can effectively restrain lattice distortion between the InAs quantum dots and GaAs, so that the grown quantum dots are larger in size, the quantum dots are more uniform in thickness, and the quantum dots are more uniform in thickness. The method is of great significance in prolonging the light-emitting wavelength of the quantum dot laser in the infrared band.

The invention discloses a photon microwave signal generator of a dual-light injection quantum dot laser and an acquisition method, two tunable semiconductor lasers of the generator respectively output a path of optical signal, the intensity of the two paths of optical signals is adjusted through a variable attenuator, and the two paths of optical signals are combined through a first beam splitter and injected into a cavity of the quantum dot laser; the frequencies of the two paths of optical signals are close to the free operation frequency of the quantum dot laser and have a preset frequency difference; an optical signal output by a quantum dot laser is divided into two paths by a first beam splitter, the first path of optical signal is reflected by a plane mirror and then is fed back into a cavity of the quantum dot laser, and a third variable attenuator is arranged on a feedback path to adjust the feedback light intensity; the second optical signal is isolated by an isolator and focused by an aspherical lens, and then a THz photon microwave signal is output. The invention further provides a photon microwave signal obtaining method, and the problems that the cost of THz signals generated through an electronic method is high, the frequency adjusting range is narrow, and the phase noise of THz signals generated through an optical method is large are solved.