50 results about "Carrier capture" patented technology

Embodiments relate to an insertion device that includes: a plunger coupled with a lock collar. The insertion device houses contents including: a striker including self-locking striker snap arm(s) where the striker is kept from firing by a striker spring captured between the plunger and the striker when the insertion device is in a cocked position; a sensor assembly; and a needle carrier that holds a piercing member, the needle carrier captured between the striker and a needle carrier spring where a self-releasing snap(s) keeps the needle carrier cocked, where the plunger prevents the self-releasing snap(s) from repositioning and releasing the needle carrier. The striker fires the needle carrier such that the self-locking striker snap arm(s) are positioned to allow the striker to snap down. The needle carrier is then retracted when the user releases the plunger and the piercing member is encapsulated within the insertion device.

A field effect transistor includes an n+ high-density impurity injection area, a p+ high-density impurity injection area, an i-impurity non-injection area, and a gate electrode. The gate electrode is free from completely lapping over the i-impurity non-injection area, but laps over substantially half the i-impurity non-injection area adjacent to the n+ high-density impurity injection area so as to avoid channel carrier capture levels due to crystal defects/grain boundaries and an effect of potential barriers due to the channel carrier capture levels.

The present invention provides a whole arc section satellite remote-control Doppler compensation method by calculating satellite orbit and using DDS to realize the compensation, wherein, the satellite orbits calculation method comprises that input data of earth station location coordinates (latitude, longitude and height), satellite transient Keplerian orbit 6 root number including major semi-axis, eccentricity, obliquity, right ascension of the ascending node and mean anomaly, and time point, earth station remote-control time period and time step, and remote-control signal carrier frequency, are used for performing geometry calculation to obtain accurate orbit location of the satellite within the remote-control time period, furthermore, a Doppler frequency bias value, a Doppler frequency first-order change rate and a Doppler frequency second-order change rate are obtained. The calculated Doppler corresponding data are transmitted to the DDS module to generate a frequency with a sign opposite to that of the Doppler frequency bias value and a same absolute value for modulating remote-control signals and generating Doppler frequency bias compensation. According to the present invention, after receiving remote-control signals, the satellite can realize capture of remote-control signal carriers by using a smaller phase-lock loop bandwidth, therefore, carrier capture time is shortened, carrier capture capability is improved, and interference to useful signals from the noise in the loop bandwidth is reduced.

Provided are a semiconductor device capable of increasing an ON current with a reduced channel resistance, and also capable of stably and independently operating respective transistors, and a method of manufacturing the semiconductor device. A semiconductor device includes a fin portion located in a manner that a part of an active region protrudes from a bottom portion of a gate groove, a gate insulating film for covering the gate groove and a surface of the fin portion, a gate electrode which is embedded within a lower portion of the gate groove and formed so as to straddle the fin portion via the gate insulating film, a first diffusion region, a second diffusion region, and a carrier capture region provided in the surface of the fin portion.

The invention relates to an organic light-emitting device and a display device. The organic light-emitting device comprises a first electrode, a second electrode and an organic layer located between the first electrode and the second electrode, wherein the organic layer comprises a light-emitting layer, the light-emitting layer contains a host material, a thermal activation delayed fluorescence sensitizer and a fluorescent dye, the energy level relationship between the main body material and the thermal activation delayed fluorescence sensitizer is shown in the specification, the LUMO main body is greater than or equal to the LUMO sensitizer, meanwhile, the HOMO sensitizer is greater than or equal to the HOMO main body, preferably, LUMO dye > LUMO sensitizer > HOMO dye > HOMO sensitizer isadopted, or the LUMO sensitizer > LUMO dye > HOMO sensitizer > HOMO dye, so the energy is completely transferred from the main body material to the sensitizer, but does not generate a relatively strong carrier capture problem with the dye. Therefore, the organic light-emitting device is advantaged in that the device voltage is reduced, and the service life of the device is prolonged.

A HEMT comprised of nitride semiconductor materials is disclosed. The HEMT includes, on a SiC substrate, a AlN buffer layer, a GaN channel layer, and a AlGaN doped layer. A feature of the HEMT is that the AlN buffer layer is grown on an extraordinary condition of the pressure, and has a large unevenness in a thickness thereof to enhance the release of carriers captured in traps in the substrate back to the channel layer.

Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

A carrier that houses an external cable terminated at a male cable connector that mates with a female midplane connector on a midplane in a server blade computer is presented. The carrier includes side channel guides that align the carrier with the female midplane connector for a precise mating with the male cable connector. A light channel in the carrier captures light from a status light emitting diode (LED) at the midplane, and transmits that light to an externally visible end of the carrier.

The present invention relates to a carrier capturing method of uniform microwave measurement and control system based on the convolution operation, and belongs to the technical field of digital communication. The method is characterized by the A/D sampling and digital complex down-conversion of the received uniform microwave measurement and control signals, and the convolution operation of the output complex baseband signals x(n) comprising the Doppler shift. The main carrier is captured by mapping one maximum value of the convolution operation. The method can be used for carrier capture in the system of phase modulation (PM) in the deep space communication, and in particular has significant advantages on the occasion of high-degree modulation. The FFT unit of the pipeline structure can be adopted to overcome the speed limit of hardware realization to certain extent.

The present invention provides a measurement method of the trap energy level distribution in an oxide layer of a semiconductor device. The basic principle of the measurement method is that firstly thevisible light irradiates a substrate to excite the free carriers, at the same time, by applying a certain voltage, the carriers are injected in a silicon dioxide layer to be captured by the energy level of a trap; then, by a linear warming method, the bound carriers captured by the trap are excited again to change into the free carriers, and a change curve of a current contributed by the part ofcarriers along with the temperature is measured; and finally, according to a thermal simulation current model, the energy level distribution of the trap in the silicon dioxide is obtained. According to the measurement method of the present invention, by the visible light and by applying the voltage, the carriers are injected in the silicon dioxide, and a mode of using the X-rays to irradiate to inject the carriers and the further damage to the silicon dioxide are avoided.

The invention provides a spread spectrum receiver multiple-access interference suppression method based on frequency spectrum detection. On the basis of a traditional partial correlation FFT spread spectrum signal acquisition algorithm, through utilization of an autocorrelation spectral characteristic of a spread spectrum code and a cross-correlation spectral characteristic of cognate codes, double detection of a useful signal and multiple-access interference is performed on a received signal, to which the multiple-access interference is superposed, through the method, and the multiple-access interference can be suppressed in a spread spectrum signal pseudo code and carrier capture stage; and, through application of the method in a spread spectrum receiver, the problem of pseudo code or carrier wrong capture caused by the fact that the multiple-access interference exists is solved. The method has the advantages of easy implementation, the obvious multiple-access interference resistance effect and the like.

The high-dynamic weak 8PSK/16PSK signal carrier capturing method disclosed by the invention is high in capturing result precision and good in real-time performance. The method is realized through the following technical scheme: a filtering sampling module firstly performs filtering sampling processing on a received signal, and writes data into a data ping-pong cache space in a positive sequence; the data processing unit reads ping-pong cache data from a data cache space of the ping-pong cache module in an inverted sequence; the change rate compensation module carries out carrier Doppler frequency change rate compensation on the sampled data, and sends an accumulation result to the FFT module for time-frequency transformation operation; the incoherent integration module is used for approximately obtaining absolute values of the complex data after time-frequency transformation and then carrying out incoherent integration; the spectrum windowing module performs cosine window windowing smoothing on the data after incoherent integration; the threshold median module judges whether capture succeeds or not by combining an integral result; and the resolving and correcting module corrects according to the median result and the Doppler change rate to obtain the carrier Doppler at the current moment, and completes carrier capture.

The invention discloses an Er-Fe2O3/BiVO4 photocatalyst for degrading rhodamine B and a preparation method thereof. The method comprises the following steps of: (1) preparation of an Er-Fe2O3 precursor; (2) preparation of Er-Fe2O3; and (3) preparation of Er-Fe2O3/BiVO4; the Er-Fe2O3/BiVO4 photocatalyst is prepared through the three steps, the Er-Fe2O3/BiVO4 photocatalyst is obtained by conducting composite modification on Er-doped Fe2O3 with a narrow forbidden bandwidth and BiVO4, more electrons and holes are generated, and the photocatalytic activity is remarkably improved. Er is doped into Fe2O3, so that the light absorption range of Fe2O3 can be expanded, the carrier excitation capability is improved, meanwhile, Er can become a carrier capture trap, the service life of Er can be prolonged, and the photocatalytic activity can be improved.

The invention provides a perovskite solar cell based on a composite hole transport layer and a preparation method thereof, and belongs to the technical field of perovskite solar cells. The composite hole transport layer comprises a PEDOT:PSS layer, and the PEDOT:PSS layer is provided with a hole modification layer, the hole modification layer is a film prepared from amphiphilic molecules, two endsof the amphiphilic molecules are respectively polar groups and non-polar groups, and the amphiphilic molecules further comprise ester groups. According to the perovskite solar cell provided by the invention, the conductivity of the PEDOT:PSS layer is improved, the interface energy level matching of the PEDOT:PSS and the perovskite active layer is improved, meanwhile, ester groups in amphiphilic molecules inhibit the defects generated on the interface, carrier capture sites are reduced, and the energy conversion efficiency of the perovskite solar cell is greatly improved.

The invention provides a semi-digital USB responder device based on an anti-fuse FPGA, and on the basis that the FPGA is adopted as a core processing chip, a digital VCO mode is adopted to be matched with an analog phase-locked loop to achieve carrier capture, tracking and subcarrier demodulation. The device is characterized by comprising a radio frequency channel module and a digital baseband module; dividing the device into six parts according to different functions, namely a receiving channel, a transmitting channel, a low-frequency processing module, a baseband module, a power supply module and a duplexer. The invention has the following obvious advantages: remote control subcarrier demodulation and telemetering subcarrier modulation functions can be realized, and remote control and telemetering interfaces are PCM (Pulse Code Modulation) forms; the data rate of the remote control PCM is flexible to set, and the data rate of the remote measurement PCM is adaptive; a small-sized integrated design is adopted, so that the volume power consumption is reduced; and modular design is adopted, so that the debugging difficulty is reduced.

Provided is a semiconductor device capable of suppressing latch-up generation and formed within a small area. In a minority carrier capture region, a P-type diffusion region (22), an N-type well (24), and a P-type diffusion region (25) are formed on a surface of a P-type semiconductor substrate (27). An N-type diffusion region (23) is formed on a surface of the N-type well (24). And the N-type well (24) is located between the P-type diffusion region (22) and the P-type diffusion region (25). The P-type diffusion region (22) and the P-type diffusion region (25) are each connected to a ground pad (12) not by the shortest distance but respectively through metal film wirings arranged in a diverted way.

The invention discloses a gallium arsenide laser with low electronic leakage and a manufacturing method thereof. The electronic energy is lowered through leading a thick narrow-band gap insert layer into the part between an n type wave guide layer and an active region. The lowering of the electronic energy does not only improve the carrier capturing efficiency of a quantum well but also improves the temperature characteristics of the quantum well, and accordingly the electronic leakage is reduced. The gallium arsenide laser with the low electronic leakage uses quaternary material as the insert layer, through selecting proper material components, the band gap width of the insert layer is lowered, and moreover, the refractive index of the insert layer can be consistent with the refractive index of the n type wave guide layer, and the influence of the insert layer to the light field distribution is avoided. Through leading the thick narrow-band gap insert layer into the part between the n type wave guide layer and the active region, the threshold current, electro-optical conversion efficiency and the like performances of a GaAs-base laser are greatly improved.