218results about "Contactless testing" patented technology

The invention relates to the technical field of semiconductor device testing, in particular to a SiC MOSFET power cycle testing method which comprises the following steps: S1, building a composite environment testing platform, configuring dynamic testing parameters, automatically calculating a physical boundary and collecting sensor data in real time; s2, establishing a finite element simulation model based on the physical boundary and sensor data, and outputting optimized dynamic test parameters and a simulated stress distribution diagram; s3, synchronously applying composite stress according to the dynamic test parameters and the stress distribution diagram, and collecting multi-dimensional test data in real time; when the system is used, through dynamic boundary calculation and real-time data acquisition, the intelligent degree and reliability of the test are improved, the test period is shortened, the failure prediction accuracy is improved, the system is suitable for reliability evaluation of SiC MOSFET devices in the fields of new energy, aerospace and the like, a large number of physical tests are avoided through virtual simulation, and the reliability of the SiC MOSFET devices is improved. And reduction of device loss and resource waste is facilitated.

The invention discloses a three-temperature test method and device for a semiconductor chip, and relates to the technical field of semiconductor chip testing, and the method comprises the steps: inputting an initialization parameter set into an impedance temperature mapping model, carrying out the phase angle analysis and multi-band feature fusion through a broadband impedance spectrum analysis method, obtaining a chip junction temperature instantaneous value, and carrying out the measurement of the junction temperature instantaneous value. A PID controller is utilized to dynamically compensate a junction temperature instantaneous value of a chip, a fuzzy rule base inference engine is utilized to map the junction temperature instantaneous value into an execution instruction set, the execution instruction set is converted into a bidirectional voltage signal through pulse width modulation, a semiconductor chilling plate is driven to perform bidirectional temperature rise and drop control in a three-temperature environment, and real-time temperature change test data is synchronously acquired. According to the method, the junction temperature instantaneous value of the chip can be more accurately obtained by combining broadband impedance spectroscopy analysis with a multi-band characteristic fusion technology, and meanwhile, the PID controller is combined with the fuzzy rule base inference engine, so that a response can be quickly made under the condition that the temperature is quickly changed, and the response capability is greatly improved.

The invention relates to a secondary harmonic characterization system based on spatial light regulation and control. The secondary harmonic characterization system comprises an incident light path unit, a detection light path unit and a sample table, the incident light path unit sequentially comprises a laser, a polarizer, a half-wave plate, a light modulator, a long-pass optical filter and an incident objective lens in the light beam incident direction; a wafer is carried on the sample table; the detection light path unit sequentially comprises an adjustable detection objective lens, a light path adjuster, a polarization analyzer, a short-pass optical filter and a detector in the light beam reflection direction; according to the SHG signal representation detected by the detector, all control parameters of the light modulator, the adjustable detection objective lens, the light path adjuster and the sample table are regulated and controlled, and the SHG signal receiving efficiency of the detector is improved. According to the invention, it is ensured that the detector efficiently receives the SHG signal, and the SHG characterization precision is improved.

The invention provides a wafer ultrasonic detection method and device, and the method comprises the steps: carrying out the global ultrasonic scanning of a whole wafer along a two-dimensional spiral path, obtaining a plurality of initial detection echo signals, forming a global echo signal group, and recording the position coordinates of the initial detection echo signals; determining a suspected bubble area based on the global echo signal group; the suspected bubble area at least has an initial measurement echo signal whose intensity is lower than a preset signal intensity threshold value; positioning the position coordinate of a suspected bubble area based on the position coordinate of the initially measured echo signal; performing local ultrasonic scanning on the suspected bubble area to obtain a plurality of retest echo signals to form a local echo signal group; judging whether bubbles exist in the suspected bubble area based on the local echo signal group and determining defect types of the bubbles; the resolution of the global ultrasonic scanning is lower than that of the local ultrasonic scanning. According to the invention, global low-resolution scanning along the spiral path and local high-resolution scanning of the wafer can be realized, and the dual advantages of efficiency and accuracy are achieved.

The invention relates to the field of performance testing, in particular to a conductivity testing system for a diode, which draws a volt-ampere characteristic curve of the diode through a data analysis unit according to voltage at two ends of the diode and current flowing through the diode, and calculates the conductivity of the diode according to a fitting value of the volt-ampere characteristic curve and a standard curve. And calculating the conductivity characterization parameter of the diode according to the maximum temperature difference value of the diode image and the thermal image, judging whether to test the conductivity of the diode or not through the conductivity test unit according to the conductivity characterization parameter of the diode, and adjusting the output voltage of the power supply module. According to the invention, the conductivity of the diode is comprehensively represented through a plurality of indexes, so that the accuracy and reliability of the test are improved. The audio frequency in the process of testing the conductivity of the diode is obtained, and whether the conductivity of the diode is abnormal or not is judged by combining the characterization parameters of the conductivity of the diode.

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

A light emitting element inspection method including: forming a plurality of light emitting element rods by etching a plurality of semiconductor material layers stacked on a growth substrate; forming a protective layer covering a portion of a top surface and a portion of side surfaces of the plurality of light emitting element rods and a contact electrode on the protective layer; forming a metal layer on the side surfaces of the plurality of light emitting element rods and on a portion of the growth substrate on which none of the plurality of light emitting elements rods is located; forming a contact pad connected to the metal layer on the growth substrate; and applying a test power to the contact electrode and the contact pad.

The present invention discloses an experimental apparatus and a test method for a pulse laser irradiation wide bandgap power device. The apparatus includes an optical path coupling system, a circuit test system, a temperature control system, and an interaction control system. According to the present invention, irradiation sensitive region locating, irradiation transient current tests, irradiation sensitive condition tests, and irradiation degradation tests for the wide bandgap power device are implemented, and advantages of convenience in experiments, simple operation, automated tests, comprehensive and accurate test results, and the like are achieved.

The invention discloses an MO-TFT trap state capture parameter extraction method and system, and the method comprises the steps: applying a laser excitation signal to an active layer region of an MO-TFT, and enabling the laser excitation signal to enter the active layer region of the MO-TFT for regulating and controlling the surface potential # imgabs0 # and inducing different transient light current responses; applying a bias voltage VDS between the source electrode and the drain electrode of the MO-TFT to ensure that the device works in a deep linear region; measuring the transient photocurrent response of the MO-TFT, and recording a transient photocurrent change curve; and calculating and extracting trap state capture parameters. According to the method, relaxation time and corresponding trap state capture parameters are extracted through measurement and fitting of transient current changes, and accurate characterization of the trap state characteristics of the MO-TFT is achieved. The method provided by the invention can effectively obtain trap state capture kinetic parameters, has high test precision and model applicability, and can be widely applied to reliability evaluation and optimization design of the MO-TFT device.

The invention relates to an online evaluation system and method for a degradation effect of a power device, and relates to the technical field of testing. The system comprises a high-power microwave irradiation device, a transient extreme stress loading device and a semiconductor parameter analyzer, the power device is arranged in the high-power microwave irradiation device and is respectively connected with the transient extreme stress loading device and the semiconductor parameter analyzer; the high-power microwave irradiation device is used for providing high-power microwave irradiation stress for the power device; the transient extreme stress loading device is used for providing transient extreme stress for the power device; and the semiconductor parameter analyzer is used for acquiring the initial electrical parameters of the power device, acquiring the test electrical parameters of the high-power microwave irradiation stress and the transient extreme stress applied to the power device, and determining the online evaluation result of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters. According to the method, the degradation of the power device under the high-power microwave irradiation stress and the transient extreme stress can be evaluated on line.

The invention relates to a pulse laser irradiation experimental device. Comprising an optical parameter measurement platform, an optical path coupling module, a photoelectric test module, an electrical test platform, a first control system and a second control system, the first control system is used for fitting the elliptic polarization state change parameters with a scanning model to obtain the refractive index and the extinction coefficient of the single-layer film; the second control system is used for inputting the refractive index, the extinction coefficient, the reflectivity and the transmissivity of the thin film into a device incidence model to calculate effective pulse laser energy when pulse laser with different wavelengths penetrates through each layer of thin film to reach an active region in the to-be-measured wide bandgap power device, and obtaining an equivalent heavy ion LET value according to the effective pulse laser energy; and the light path coupling module, the photoelectric test module and the electrical test platform are controlled to carry out closed-loop adjustment on pulse laser energy. According to the invention, accurate control and adjustment of pulse laser energy are realized.

The invention discloses a device electroluminescence characteristic test system comprising an AC voltage signal source for providing an AC voltage signal; the conductive test bench comprises a base station and a contact probe, the base station is made of a conductive material and is used for placing a sample to be tested, the contact probe comprises a conductive material and is used for forming electric contact with the sample to be tested, and during testing, the sample to be tested is placed on the base station, and the contact probe is used for forming electric contact with the sample to be tested. AC voltage generated by the AC voltage signal source is applied to a to-be-tested sample through the contact probe, and the AC voltage is large enough to drive the to-be-tested sample to emit light; the series resistors are used for forming series connection with a sample to be tested; and a detection instrument. According to the method, the problems of etching damage and complicated operation caused by metal contact in a traditional EL detection method and the problem of inaccurate spectrum test in a PL detection method are solved, a simple and efficient novel EL characterization means without pretreatment is realized, and the method is suitable for rapid test and performance evaluation of various material systems and luminescent devices.

A method for non-contact detection. The method includes providing a semiconductor device. The semiconductor device has an epitaxial stack, a first electrode and a second electrode connected to the epitaxial stack. The method further includes applying a microwave to the first electrode to cause the semiconductor device to emit light and detecting the light emitted from the semiconductor device.

The invention relates to the field of semiconductor device and integrated circuit research, in particular to a semiconductor device dose rate effect laser simulation system. Multiple wavelengths and a wide energy range are achieved through the optical fiber laser pulse seed source assembly and the solid laser amplifier assembly, the pulse width can range from 1 ns to 100 microseconds, variable complex waveforms such as square waves, rectangular waves, sine waves and pulse strings are achieved, and pulse laser with the energy range from the nanojoule level to the joule level and adjustable wavelengths and waveforms can be output according to requirements. The high-low energy laser adopts a common-path design, so that the system integration degree is improved; light spots are adjustable from centimeter level to micron level, and global irradiation and micro-area positioning and scanning of an irradiation sample can be realized. According to the invention, dose rate effects under different conditions can be accurately and flexibly simulated, the blank of a high-energy, variable-waveform and multi-wavelength dose rate effect laser simulation system is filled up, and an efficient solution is provided for the reliability research of devices under a complex irradiation environment.

The embodiment of the invention provides a light-emitting device detection device and method, and relates to the technical field of display. In the light-emitting device detection device and method, the light-emitting device grabbing unit grabs the light-emitting device, the second coil in the light-emitting grabbing unit induces the change of the electromagnetic signal in the first coil to generate the induction current used for driving the light-emitting device, and the detection unit detects whether the light-emitting device normally emits light under the action of the induction current. Compared with the prior art, physical contact points and connecting lines required in the test can be reduced, the possibility of damaging the light-emitting device by manual intervention is reduced, meanwhile, the performance of the light-emitting device can be effectively detected, and the detection accuracy is improved.

The invention provides a positioning method and system applied to soft failure of an advanced process SRAM (Static Random Access Memory). The method comprises the following steps: determining boundary conditions of failure of a chip; performing laser scanning test: scanning pixel points on the chip one by one by using laser under the condition around the boundary condition to excite Pass / Fail state change of the chip, so that a contrast difference is generated between a failure position and a normal position, and a laser scanning image and a contrast image are obtained; and superposing the laser scanning image and the contrast image to find a failure position on the laser scanning image, comparing the laser scanning image with the corresponding layout layer, and positioning a hot spot on the layout layer according to the failure position. According to the invention, the dynamic test of the chip can be realized through the combination of the existing light emission microscope equipment and the test machine, and the laser scanning function of the light emission microscope equipment is combined to actively excite the change of the state of the chip when the chip fails and is in a normal critical state, so that the failure position is positioned. And the yield and the reliability of the advanced integrated circuit SRAM are improved.

A method includes illuminating a surface of a sample with a first light having a first wavelength (λ1) and detecting first intensities of a first photoluminescence induced within the sample by absorption of the first light by the sample. The method also includes illuminating the surface of the sample with a second light having a second wavelength (λ2) that is different from the first wavelength and detecting second intensities of a second photoluminescence induced within the sample by absorption of the second light by the sample. The method also includes generating an output representing the first intensities and the second intensities.

The invention relates to wafer test equipment, which comprises an electric test assembly, which is arranged on a mounting rack and comprises a telescopic member, a fixed end of the telescopic member is provided with a probe disc, the probe disc is provided with a plurality of probes corresponding to electrode pads of a wafer chip to be tested one by one, the probe disc is provided with a plurality of through holes between the probes, and the through holes are communicated with the probe disc. The telescopic end of the telescopic piece is provided with a suction cup, the suction cup is located below the probe disc, and the suction cup is provided with a plurality of suction rods extending into the through holes; and a light testing assembly. According to the wafer test equipment, the to-be-tested wafer is fixed on the suction rod after the angle and the position of the to-be-tested wafer are adjusted, and then the suction cup is driven to move downwards, so that the probes on the probe disc can be in contact with the metal bonding pads of the chips on the to-be-tested wafer, and electrical performance tests can be simultaneously carried out on all the chips on the wafer through the plurality of probes; and the optical fiber array disc is moved to be positioned on the wafer, so that all chips can be subjected to optical testing at one time, and the testing efficiency of the wafer is greatly improved.

This analysis device 1 comprises: a tester 10 that inputs a test signal St having a prescribed frequency to a semiconductor device D; an X-ray irradiation device 11 that irradiates the semiconductor device D with X-rays R; a detector 15 that detects X-rays (transmitted X-rays Rt) from the semiconductor device D due to the irradiation with the X-rays R and outputs a detection signal Sd on the basis of the detected result; and a signal processing device 16 that performs, on the detection signal Sd, signal processing based on the prescribed frequency.

The utility model provides a photoelectric device sensitivity detection device, which is characterized in that a light source module is arranged on a detection table and comprises a light source isolation box; the device conveying mechanism comprises a feeding mechanism, the feeding mechanism comprises at least one feeding disc, the feeding disc is rotationally arranged on the detection table, and part of the feeding disc is located in the light source isolation box; the detection module comprises two conductive plates which are arranged in an opening and closing mode, and when the two conductive plates are opened, the conductive plates abut against pins of a photoelectric device located in the light source isolation box. Therefore, when the feeding disc rotates, the photoelectric devices which are arranged at different positions around the feeding disc can be fed into the light source isolation box for light source detection, under the action of the light source isolation box, an external light source can be isolated, and the detection accuracy and the detection efficiency of the photoelectric devices are improved. The two conductive plates of the detection module are opened to be conducted with the pins of the photoelectric device, so that the problem of poor contact of the pins is solved.

The present invention discloses a three-temperature testing method and device for a semiconductor chip, relating to the technical field of semiconductor chip testing. The method comprises the following steps: inputting an initialization parameter set into an impedance-temperature mapping model, performing phase angle analysis and multi-band feature fusion through a broadband impedance spectrum analysis method, obtaining the instantaneous value of the chip junction temperature, dynamically compensating the instantaneous value of the chip junction temperature using a PID controller, mapping the result into an execution instruction set through a fuzzy rule base inference engine, converting the execution instruction set into a bidirectional voltage signal through pulse width modulation, driving a semiconductor refrigeration plate to perform bidirectional temperature rise and fall control in a three-temperature environment, and synchronously collecting real-time temperature change test data. The present invention adopts broadband impedance spectrum analysis combined with multi-band feature fusion technology to more accurately obtain the instantaneous value of the chip junction temperature. At the same time, the combination of the PID controller and the fuzzy rule base inference engine can quickly respond to rapid temperature changes, greatly improving the response capability.

The application provides a chip-scale package interconnection structure failure analysis method and device, comprising: determining the failure external pin corresponding to the failure CSP package interconnection structure according to the current-voltage characteristic curve corresponding to each external pin; collecting and analyzing the time-domain reflection waveform of the failure external pin by using the electro-optical terahertz pulse reflection technology, positioning the target interconnection failure area in the interconnection path where the failure external pin is located according to the amplitude, time delay and waveform distortion characteristics of the reflection pulse; scanning the target interconnection failure area by using the three-dimensional X-ray microscopic imaging technology, and determining the target position of the failure point on the interconnection path where the failure external pin is located and the corresponding structural defects based on the scanning result. The application realizes the non-destructive failure analysis of the CSP package interconnection structure by combining the electro-optical terahertz pulse reflection technology and the three-dimensional X-ray microscopic imaging technology, and improves the failure point fault positioning accuracy and efficiency.

The present invention relates to a pulsed laser irradiation experimental device. It comprises an optical parameter measurement platform, an optical coupling module, an optoelectronic test module, an electrical test platform, and a first control system and a second control system. The first control system is used to fit the ellipsometric state change parameters with a scanning model to obtain the refractive index and extinction coefficient of a single-layer thin film. The second control system is used to input the refractive index, extinction coefficient, reflectivity, and transmittance of the thin film into a device incident model to calculate the effective pulsed laser energy of pulsed lasers of different wavelengths when they pass through each layer of thin film and reach the active region in a wide bandgap power device to be tested. The equivalent heavy ion LET value is obtained based on the effective pulsed laser energy, and the optical coupling module, optoelectronic test module, and electrical test platform are controlled to perform closed-loop regulation of the pulsed laser energy. The present invention achieves accurate control and regulation of pulsed laser energy.

This invention relates to a dual-wavelength pump-probe system and method for characterizing carrier lifetime in silicon waveguides, belonging to the field of carrier dynamics characterization technology. The system employs a dual-wavelength collaborative measurement architecture. After polarization adjustment, power adjustment, and time delay, the pump light is focused from above the chip to illuminate the silicon waveguide under test, exciting free carriers. A normalized detection mechanism is constructed by collecting the probe light before and after the silicon waveguide chip under test to establish the ratio of input reference to output signal. Simultaneously, a synchronous detection link is formed using a modulation unit and a phase-locked loop detection unit to effectively suppress the influence of environmental noise, light source power fluctuations, and coupling drift on the measurement results. Furthermore, the interference of pump scattered light on the probe signal is reduced through an output filter structure, thereby significantly improving the sensitivity, stability, and repeatability of silicon waveguide carrier lifetime measurement. By fitting the normalized transmission variation curves under different time delays, direct measurement of carrier lifetime is achieved.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation while other utilize four wave-mixing or multi-wave mixing. Corona discharge may be applied to the sample to provide additional information. Some approaches involve determining current flow from a sample illuminated with radiation.

This application provides a key parameter testing system and method for fiber-optic single-photon avalanche diodes (SPADs). The system uses a testing module to drive multiple SPADs under test, generates laser trigger signals based on parameter testing requests, and acquires pulse parameters for each SPAD under test under different testing modes with and without light source illumination. A laser generation module generates an initial pulse signal based on the laser trigger signal; a laser adjustment and transmission module adjusts the light attenuation value of the initial pulse laser and separates it into multiple test light sources with equal laser power; a control module monitors the laser power of the laser generation module and configures the laser adjustment parameters of the laser adjustment and transmission module; and the system determines the key parameters of each SPAD under test based on the pulse parameters. The system provided in this application can quickly detect the key parameters of multiple SPADs while ensuring detection accuracy, and the parameter testing process is simple and intuitive.

The application provides a film layer detection method, provides a to-be-detected film layer, focuses test laser on a first target position in the to-be-detected film layer and continuously irradiates for a first preset time period, obtains first intensity information of second harmonic generated by the first target position, determines doping concentration information of the first target position according to an initial intensity value in the first intensity information, and determines a doping type of the first target position according to intensity change information in the first intensity information. In this way, the doping type and the doping concentration inside the to-be-detected film layer can be determined based on the intensity information of the second harmonic, the to-be-detected film layer can be monitored, the monitoring time and means are flexible, the to-be-detected film layer will not be physically damaged, and a complete device structure including an electrode is not required, so that rapid analysis and online monitoring of the to-be-detected film layer can be realized.

The objective is to provide an inspection probe for easily inspecting semiconductor devices without contact. [Solution] The inspection probe head is an inspection probe head equipped with a radiating antenna, and includes a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element to supply power to the semiconductor element, and a receiving antenna attached to the main surface side of the substrate and connected to the power connector and the power terminal to receive electromagnetic wave signals radiated from the radiating antenna of the semiconductor element. The receiving antenna is formed on the main surface of the substrate.

Methods for characterizing semiconductor doping in wide-bandgap semiconductor samples include: measuring an initial value V0 of the surface voltage at a region on the surface of the semiconductor sample in darkness; charging the region to deep depletion in darkness by depositing a specified corona charge at the region; measuring the surface voltage value at the region in darkness after charging; and using a specific photon flux f. eff The light irradiates the charging region, and a specific photon flux f eff A photon energy above the semiconductor bandgap is used, sufficient to generate free minority carriers in the semiconductor sample, thereby causing photoneutralization of the corona charge. The relationship between the photoneutralization-induced corona charge decay and the irradiation time t at the region is monitored using non-contact time-resolved measurements of the surface voltage V(t). The monitored time-resolved surface voltage decay data V(t) is analyzed to determine the photoneutralization time constant τ. ph ; and using a specific photon flux f eff Light neutralization time constant τ ph It serves as a semiconductor doping index, and its value characterizes the semiconductor doping concentration in that region.

The invention relates to the field of defect detection equipment, and discloses ultrasonic defect detection equipment for semiconductors, which comprises a detection table, two sliding blocks are slidably arranged at the top end of the detection table, the top end of each sliding block is fixedly connected with a base plate, and the top end of each base plate is fixedly connected with a first clamping block and a second clamping block. One side of the first clamping block and one side of the second clamping block are movably connected with elastic assemblies respectively, the two ends of the first clamping block and the two ends of the second clamping block are fixedly connected with mounting shells respectively, and electromagnets are fixedly clamped to the center positions of the mounting shells respectively. Compared with the tedious installation and disassembly process in the prior art, the fastening time in the semiconductor device detection process is shortened to a great extent.