97results about "Contactless testing" patented technology

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

The invention relates to the field of semiconductor device and integrated circuit research, in particular to a semiconductor device dose rate effect laser simulation system. Multiple wavelengths and a wide energy range are achieved through the optical fiber laser pulse seed source assembly and the solid laser amplifier assembly, the pulse width can range from 1 ns to 100 microseconds, variable complex waveforms such as square waves, rectangular waves, sine waves and pulse strings are achieved, and pulse laser with the energy range from the nanojoule level to the joule level and adjustable wavelengths and waveforms can be output according to requirements. The high-low energy laser adopts a common-path design, so that the system integration degree is improved; light spots are adjustable from centimeter level to micron level, and global irradiation and micro-area positioning and scanning of an irradiation sample can be realized. According to the invention, dose rate effects under different conditions can be accurately and flexibly simulated, the blank of a high-energy, variable-waveform and multi-wavelength dose rate effect laser simulation system is filled up, and an efficient solution is provided for the reliability research of devices under a complex irradiation environment.

A method includes illuminating a surface of a sample with a first light having a first wavelength (λ1) and detecting first intensities of a first photoluminescence induced within the sample by absorption of the first light by the sample. The method also includes illuminating the surface of the sample with a second light having a second wavelength (λ2) that is different from the first wavelength and detecting second intensities of a second photoluminescence induced within the sample by absorption of the second light by the sample. The method also includes generating an output representing the first intensities and the second intensities.

This analysis device 1 comprises: a tester 10 that inputs a test signal St having a prescribed frequency to a semiconductor device D; an X-ray irradiation device 11 that irradiates the semiconductor device D with X-rays R; a detector 15 that detects X-rays (transmitted X-rays Rt) from the semiconductor device D due to the irradiation with the X-rays R and outputs a detection signal Sd on the basis of the detected result; and a signal processing device 16 that performs, on the detection signal Sd, signal processing based on the prescribed frequency.

The application provides a chip-scale package interconnection structure failure analysis method and device, comprising: determining the failure external pin corresponding to the failure CSP package interconnection structure according to the current-voltage characteristic curve corresponding to each external pin; collecting and analyzing the time-domain reflection waveform of the failure external pin by using the electro-optical terahertz pulse reflection technology, positioning the target interconnection failure area in the interconnection path where the failure external pin is located according to the amplitude, time delay and waveform distortion characteristics of the reflection pulse; scanning the target interconnection failure area by using the three-dimensional X-ray microscopic imaging technology, and determining the target position of the failure point on the interconnection path where the failure external pin is located and the corresponding structural defects based on the scanning result. The application realizes the non-destructive failure analysis of the CSP package interconnection structure by combining the electro-optical terahertz pulse reflection technology and the three-dimensional X-ray microscopic imaging technology, and improves the failure point fault positioning accuracy and efficiency.

This invention relates to a dual-wavelength pump-probe system and method for characterizing carrier lifetime in silicon waveguides, belonging to the field of carrier dynamics characterization technology. The system employs a dual-wavelength collaborative measurement architecture. After polarization adjustment, power adjustment, and time delay, the pump light is focused from above the chip to illuminate the silicon waveguide under test, exciting free carriers. A normalized detection mechanism is constructed by collecting the probe light before and after the silicon waveguide chip under test to establish the ratio of input reference to output signal. Simultaneously, a synchronous detection link is formed using a modulation unit and a phase-locked loop detection unit to effectively suppress the influence of environmental noise, light source power fluctuations, and coupling drift on the measurement results. Furthermore, the interference of pump scattered light on the probe signal is reduced through an output filter structure, thereby significantly improving the sensitivity, stability, and repeatability of silicon waveguide carrier lifetime measurement. By fitting the normalized transmission variation curves under different time delays, direct measurement of carrier lifetime is achieved.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation while other utilize four wave-mixing or multi-wave mixing. Corona discharge may be applied to the sample to provide additional information. Some approaches involve determining current flow from a sample illuminated with radiation.

This application provides a key parameter testing system and method for fiber-optic single-photon avalanche diodes (SPADs). The system uses a testing module to drive multiple SPADs under test, generates laser trigger signals based on parameter testing requests, and acquires pulse parameters for each SPAD under test under different testing modes with and without light source illumination. A laser generation module generates an initial pulse signal based on the laser trigger signal; a laser adjustment and transmission module adjusts the light attenuation value of the initial pulse laser and separates it into multiple test light sources with equal laser power; a control module monitors the laser power of the laser generation module and configures the laser adjustment parameters of the laser adjustment and transmission module; and the system determines the key parameters of each SPAD under test based on the pulse parameters. The system provided in this application can quickly detect the key parameters of multiple SPADs while ensuring detection accuracy, and the parameter testing process is simple and intuitive.

The application provides a film layer detection method, provides a to-be-detected film layer, focuses test laser on a first target position in the to-be-detected film layer and continuously irradiates for a first preset time period, obtains first intensity information of second harmonic generated by the first target position, determines doping concentration information of the first target position according to an initial intensity value in the first intensity information, and determines a doping type of the first target position according to intensity change information in the first intensity information. In this way, the doping type and the doping concentration inside the to-be-detected film layer can be determined based on the intensity information of the second harmonic, the to-be-detected film layer can be monitored, the monitoring time and means are flexible, the to-be-detected film layer will not be physically damaged, and a complete device structure including an electrode is not required, so that rapid analysis and online monitoring of the to-be-detected film layer can be realized.

The objective is to provide an inspection probe for easily inspecting semiconductor devices without contact. [Solution] The inspection probe head is an inspection probe head equipped with a radiating antenna, and includes a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element to supply power to the semiconductor element, and a receiving antenna attached to the main surface side of the substrate and connected to the power connector and the power terminal to receive electromagnetic wave signals radiated from the radiating antenna of the semiconductor element. The receiving antenna is formed on the main surface of the substrate.

There are provided systems and methods comprising obtaining design data of each of a plurality of given overlay targets comprising a plurality of stacked layers, using at least part of the design data to simulate image data of the given overlay target that would have been acquired by an electron beam examination system, using the image data to predict, before actual manufacturing of each given overlay target, one or more given attributes informative of quality of one or more images of the given overlay target after being manufactured according to the design data, and using the one or more given attributes determined for each given overlay target to select at least one optimal overlay target among the plurality of different overlay targets, wherein the at least one optimal overlay target is usable to be actually manufactured on the semiconductor specimen.

An analysis device 1 comprises: an LSI tester 3 that inputs a test pattern signal TP to a semiconductor device D and outputs a trigger signal indicating start timing of the test pattern signal TP and a test result signal TR indicating a test result, either Pass or Fail, of the semiconductor device D; an SSPD 13 that detects light emitted from a field of view set on the semiconductor device D and outputs a detection signal; and a processing unit 19 that processes the trigger signal and the detection signal to measure elapsed time from the start timing to the timing of the detection signal, generates light emission timing data indicating the elapsed time, classifies the light emission timing data into either Pass or Fail on the basis of the test result signal TR that is output from the LSI tester 3, and calculates, for each Pass and Fail, a total of frequency of the elapsed time indicating multiple light emission timing data when the test pattern signal TP is repeatedly input.

A metrology system may include an illumination source to generate an illumination beam and an illumination sub-system to direct the illumination beam to a sample with an inversion-symmetric substrate and one or more films disposed on the inversion-symmetric substrate. The system may further include a filter configured to block a wavelength of the illumination beam and pass a wavelength associated with a second harmonic of the illumination beam and a detector to capture second harmonic generation (SHG) light. The system may further include a controller to receive metrology data from the detector associated with the SHG light from with an interface between the inversion-symmetric substrate and the one or more films and generate one or more metrology measurements associated with the one or more films based on the metrology data.

This analysis device comprises: an optical scanner that irradiates a prescribed position on one surface of an object to be measured and scans said position; a photodetector that detects light reflected from the prescribed position as a result of light irradiation and outputs a detection signal; and an optical scanner control unit that controls the optical scanner. The optical scanner control unit has: a high-speed response circuit that responds with a first time constant; a low-speed response circuit that responds with a second time constant greater than the first time constant; and a changeover switch for selecting either the high-speed response circuit or the low-speed response circuit.

The application discloses a method for determining Josephson junction abnormality and application thereof, and belongs to the technical field of quantum chip testing. The method for determining Josephson junction abnormality comprises the following steps: collecting a topographic image of a specified area of a Josephson junction, and measuring the conductivity of the area corresponding to the topographic image to form a conductivity imaging graph; and determining Josephson junction abnormality information according to the topographic image and the conductivity imaging graph, wherein the abnormality information comprises microscopic defects, and the microscopic defects at least include one of local defects, stress-induced leakage current and negative bias temperature instability. In the manner, the present application can solve the problem that the current microscopic electron microscope cannot determine the small defects of the Josephson junction due to low resolution, and the position and main reason causing the resistance failure of the Josephson junction can be determined according to the analysis of the topographic image and the conductivity imaging graph obtained by testing the specified area.

The application is a method for measuring heterojunction interface recombination rate by electron beam induced current, which considers both depletion zone bulk recombination and front interface recombination, and considers both diffusion movement and drift movement caused by non-uniform built-in electric field in the depletion zone, and obtains a new carrier collection probability function. The application analyzes the characteristics of heterojunction interface recombination by electron beam induced current, which is the most important recombination mechanism affecting short-wave response of heterojunction device. EBIC / I b The application calculates the recombination rate S p of heterojunction interface, thereby obtaining a set of parameters capable of reliably evaluating the quality of heterojunction interface.

To provide an estimation device, an estimation method, and a program capable of estimating an SEU cross section with high accuracy.SOLUTION: A measurement unit 12 counts the number of SEUs generated when a semiconductor device 13 is irradiated with neutrons or protons emitted from a radiation source 11 to measure an SEU probability, a setting unit 21 sets an arithmetic expression for calculating the SEU probability based on a model function simulating an SEU cross section, a calculation unit 22 calculates an estimated value of the SEU probability based on the arithmetic expression, and a comparison unit 23 compares a measured value of the SEU probability with the estimated value and changes a model parameter included in the model function such that the measured value matches the estimated value. The setting unit 21 changes the model function using the model parameter changed by the comparison unit 23, corrects the model function based on the SEU probability measured by the measurement unit 12 when the radiation source 11 irradiates the semiconductor device 13 with protons, and estimates the corrected model function as the SEU cross section.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of quality detection, and discloses a high-precision semiconductor device packaging quality detection system. Comprising the following steps: acquiring electrical performance data including current, resistance and voltage data; correcting the current data by using a magneto-optical temperature correction method; calculating resistance and voltage data based on the corrected current data; the obtained thermal performance data comprises junction temperature and thermal resistance data; calculating junction temperature data of the high-precision semiconductor device by using an improved Kalman filtering algorithm; obtaining thermal resistance data based on the junction temperature data; preprocessing the electrical performance data and the thermal performance data to obtain a preprocessed data set; based on the preprocessed data set, inputting the preprocessed data set into a pre-trained auto-encoder model, and predicting to obtain a packaging quality index; judging whether the packaging quality of the high-precision semiconductor device is qualified or not according to the packaging quality index; and the accuracy and the reliability of packaging quality detection of the high-precision semiconductor device are effectively improved.

Provided is a substrate testing apparatus including a substrate support including a first surface configured to support a substrate and a second surface opposite to the first surface, and a photographing hole penetrating through the first surface and the second surface, a camera arranged below a lower surface of the substrate support, and configured to photograph the skeleton chips through the photographing hole of the substrate support, and a probe device arranged above the substrate and configured to apply a voltage to the skeleton chips. The probe device comprises a probe pin configured to contact a chip bump arranged on an upper surface of a skeleton chip, a probe card in contact with an upper surface of the probe pin, a lower plate arranged under a lower surface of the probe card, and a support protrusion arranged under the lower plate, and configured to be detachable.

The utility model discloses a non-contact full-automatic carrier Hall mobility test system for a radio frequency HEMT (High Electron Mobility Transistor) structure. The non-contact full-automatic carrier Hall mobility test system comprises an electromagnetic control assembly, a sample stage movement assembly, a microwave assembly, a signal detection assembly, a signal regulation assembly, a circuit control assembly, an industrial personal computer and data analysis software. According to the utility model, the total electromagnet intensity can be + / -1.2 T, the larger the magnetic field intensity is, the stronger the Hall effect is, and the test resolution and accuracy can be effectively improved; the back copper block lifting mechanism adopts a high-precision servo motor, the resolution ratio is higher, and accurate positioning of a measurement signal point can be realized through a software algorithm; according to the utility model, the price is reduced, the period is shortened, the consistency is better, the parameters are adjustable, and further improvement can be realized.

The invention relates to the field of semiconductor device testing, in particular to a GaN device hot spot positioning and junction temperature quantitative measurement method and system. The method comprises the following steps: acquiring infrared thermal image data and Raman spectrum data of the surface of a target GaN device in a working state; calculating to obtain micro-area Raman temperature data based on the Raman spectrum data; performing super-resolution enhancement processing on the infrared thermal image data based on the micro-area Raman temperature data to generate a high-resolution fusion temperature field; positioning the surface hot spot position of the target GaN device according to the high-resolution fusion temperature field; and calculating the channel junction temperature corresponding to the position of the surface hot spot through inversion based on the high-resolution fusion temperature field. The problem that the measurement of the junction temperature of a GaN device is not accurate enough in the prior art is solved. According to the GaN device infrared thermal image and Raman data, the micro-area Raman temperature is calculated, infrared is enhanced to generate a high-resolution fusion temperature field, the channel junction temperature is inverted, and the junction temperature measurement accuracy is improved.

The invention discloses a single-particle damage positioning diagnosis method and system, and relates to the technical field of semiconductor device testing, and the method comprises the following steps: obtaining a semiconductor device to be tested; wherein the front surface of the semiconductor device to be tested is provided with a window area, and the window area is not covered by metal; each scanning point in the window area is scanned through laser, and position information and leakage current data of each scanning point are obtained; according to the leakage current data, obtaining leakage current increment of each scanning point before and after laser radiation; constructing a damage distribution diagram by taking the leakage current increment as a quantitative damage degree; and acquiring a physical structure diagram of the semiconductor device to be tested, and performing image registration and overlapping on the damage distribution diagram and the physical structure diagram so as to map the damage area into the physical structure diagram. According to the invention, the semiconductor to-be-tested device with the laser radiation window area arranged on the front surface is utilized, so that the problems of shielding and attenuation of a metal wiring layer to pulse laser penetration in a traditional test are fundamentally solved.

The invention belongs to the technical field of space radiation, and discloses a carbon-based device single event effect pulse laser test system and an equivalent LET value calculation method, which can be used for guiding a carbon-based device single event effect pulse laser test. The system is composed of a pulse laser, a probe test platform, a power supply system, a control system and a high-frequency oscilloscope, based on the equivalence of the system, the method obtains equivalence = 1.02104 based on the structural characteristics of the carbon-based device through the front irradiation characteristics of laser, and the method has important significance for guiding the pulse laser test of the carbon-based device.

To highly accurately and smoothly perform failure analysis according to an analysis method.SOLUTION: The analysis device 1 includes the optical scanner 26 that irradiates a predetermined position on one surface of the measurement object MO with light and scans the position, the light detector 13 that detects the light reflected at the predetermined position according to the irradiation of the light and outputs a detection signal, and the optical scanner control unit 50 that controls the optical scanner 26. The optical scanner control unit 50 includes a high-speed response circuit 501 that responds with a first time constant, a low-speed response circuit 502 that responds with a second time constant larger than the first time constant, and a changeover switch 503 that selects one of the high-speed response circuit 501 and the low-speed response circuit 502.SELECTED DRAWING: Figure 3

Various embodiments of the teachings herein include an electronic subassembly. An example includes: an electronic component; a board; wherein the component and the board extend horizontally relative to each other in various layers within the subassembly; contacting means of the electronic component extending vertically in the subassembly; a glass sheet incorporated into the subassembly in a horizontal installation position; a horizontal opening in the glass sheet through which is routed at least part of the contacting means; an optical waveguide structured in the glass sheet; and two optical connection points for the waveguide by which polarized laser light can be coupled into and out of the waveguide. The glass sheet is arranged between a mounting plate and the component.

The application discloses a wide-band micro-region semiconductor photocurrent imaging system and method, and belongs to the technical field of semiconductor testing. The system comprises a temperature adjusting module, a picosecond pulse laser output module, an optical chopper, a microscopic imaging module, an electric piezoelectric displacement table and a lock-in amplifier. The temperature adjusting module is used for adjusting the temperature of a semiconductor device to be tested to 4K to 296K. The picosecond pulse laser output module is used for outputting a pulse laser beam in a wave band of 430nm to 2000nm. The optical chopper is used for modulating the laser beam into an optical pulse signal with a fixed modulation frequency. The lock-in amplifier is used for applying a bias voltage to the semiconductor device to be tested and collecting a photocurrent signal under the fixed modulation frequency. The electric piezoelectric displacement table is used for moving the semiconductor device to be tested point by point under a low-temperature environment. The microscopic imaging module is used for synchronously acquiring a surface topography image and constructing a photocurrent spatial distribution map. The application solves the technical problem that the current technology cannot simultaneously realize multi-wavelength excitation, weak signal extraction and micro-region spatial resolution imaging under an extremely low-temperature environment.

A method of inspecting a light emitting element sample, an apparatus for inspecting a light emitting element sample, and a method of manufacturing a display device are provided. The method of inspecting a light-emitting element sample includes the steps of: acquiring electrical information and optical information on the light-emitting element sample; and analyzing the light emitting element sample by combining the electrical information and the optical information.

The application relates to a power device degradation online testing system and method, and relates to the technical field of testing.The power device degradation online testing system comprises a high-power microwave irradiation device, a switch state loading device and a semiconductor parameter analyzer; the high-power microwave irradiation device is used for providing high-power microwave irradiation stress to a power device; the switch state loading device is used for controlling the power device to work in a target switch state; the target switch state comprises a soft switch state or a hard switch state; the semiconductor parameter analyzer is used for acquiring initial electrical parameters of the power device, acquiring test electrical parameters of the power device under the target switch state and the high-power microwave irradiation stress, and determining a degradation online testing result of the power device according to the initial electrical parameters and the test electrical parameters.The application can online monitor the electrical parameter degradation characteristics of the power device under the high-power microwave irradiation stress in the soft switch state and the hard switch state respectively.

The application discloses a kind of carrier effective diffusion length test method and test system.The test method includes: providing first epitaxial structure and second epitaxial structure;Make laser respectively irradiation produce photo-generated carrier, diffuse to multiple quantum well layer and produce recombination luminescence, form photoluminescence spectrum;Based on photoluminescence spectrum, obtain first photoluminescence intensity, second photoluminescence intensity;Based on the correlation with the thickness of corresponding test layer, calculate the carrier effective diffusion length in test layer.The test method provided by the application does not need to cut the fragment, is more convenient for practical application, and is also expected to be used for whole piece multi-point scanning type test;Test cost is low, method is simple, and operability is strong;Evaluation obtained is the carrier effective diffusion length in test layer, reflects the carrier transport capacity of epitaxial layer as a whole;Test obtained is the diffusion length in the direction perpendicular to the surface of epitaxial wafer, is favorable for directly reflecting the carrier transport characteristics of vertical device.

The invention discloses a system and a method for measuring the service life of a carrier of a semiconductor wafer, which are applied to the technical field of wafer detection. The semiconductor wafer carrier lifetime measurement system comprises a signal generator, a light source and an image acquisition module. The signal generator can obtain a light source light-emitting pulse signal and an image acquisition pulse signal, and the gating opening time of the image acquisition pulse signal and the starting time of the enabling level of the light source light-emitting pulse signal have different delay durations in different light pulse periods of the light source light-emitting pulse signal. The light source can generate a pulse light beam and excite a semiconductor sample to generate carriers, and the image acquisition module can start to acquire fluorescence signals emitted by the carriers generated by the semiconductor sample in a recombination process at gating opening moments of different image acquisition periods so as to reflect a carrier recombination attenuation process. The carrier lifetime is measured through the dynamic attenuation characteristic that the intensity of the captured fluorescence signal changes along with time, and the accuracy of measuring the carrier lifetime is improved.