285results about "Contactless testing" patented technology

An inspection method which simplifies an inspection step by eliminating the need to set probes on wiring or probe terminals, and an inspection device for performing the inspection step. A voltage is applied to each of inspected circuits or circuit elements to operate the same. Signal processing is performed on an output from each inspected circuit or circuit element during operation to form a signal (operation information signal) including information on the operating condition of the circuit or the circuit element. The operation information signal is amplified and the amplitude of an alternating current voltage separately input is modulated with the amplified operation information signal. The voltage of the modulated alternating current is read in a non-contact manner to determine whether the corresponding circuit or circuit element is non-defective or defective.

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters.

The utility model discloses a method for testing the frequency properties of the photoelectric detector used for fiber optic gyroscopes. A signal generator produces sinusoidal signals and adds the signal to a light intensity modulator to carry out sinusoidal modulation on the optical power of the optical signal from the fiber source in order to produce an optical signal with sinusoidal components. The measured photodetector converts the modulated optical signal into an electrical signal and samples the electric signal by means of high-speed data acquisition card, then conducts narrowband filter and signal processing over the collected samples and calculates the corresponding frequency response. The frequency sequence pre-selected by a numerical control system changes the frequency at which the sine wave generator (NC) system sends out signals , tests a series of frequency point responses, which can be combined into an amplitude frequency response curve of the measured photodetector, and the curve is transmitted to the terminal computer for displaying and storage. By controlling all the test processes by numerical control system, the utility model has the advantages of automatic measurement, fast testing speed, high testing precision, and therefore is suitable for carefully weighing the photodetector frequency performance in the whole operating frequency range.

Methods and systems are presented for analysing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analysed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks. In one preferred embodiment the methods and systems are used to obtain series resistance images of silicon photovoltaic cells without making electrical contact with the sample cell.

The invention relates to a detection device and the method for the thermoelectric electric power generation performance. The detection device is made up of the thermal resource, the cooling end, the DC, the standard load resistance, the multicenter data collector, the computer ,the thermocouple and the vacuum pump. The method is to install the two thermoelectric power generation devices between the thermal resource and the cooling end at the same time, the output of which is connected with the standard load resistance, so it can get the output power by changing the standard load resistance which contrasts to the input power to get the energy conversion efficiency. The invention can avoid the heat loss of the input measurement system by using the double detection symmetrical thermal resource, comparing to the present method, the device has the simple structure and high efficiency, and also it can detect the energy conversion efficiency directly.

A semiconductor device defect detecting apparatus including: a sensor disposed on semiconductor process equipment, the sensor configured to detect a signal emitted from a semiconductor device in contact with the semiconductor process equipment; and a signal analyzer configured to determine whether the semiconductor device is defective based on the detected signal in a predetermined frequency range.

A method includes measuring a characteristic of a workpiece at a plurality of locations. A uniformity profile is generated based on the characteristic measurements. At least one acceptable region of the workpiece is identified based on the uniformity profile. At least one unacceptable region of the workpiece is identified based on the uniformity profile. The uniformity profile is filtered to remove at least a portion of the characteristic measurements associated with the second unacceptable region. At least one parameter of an operating recipe for performing a process on the workpiece is determined based on the filtered uniformity profile.

A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

The invention provides a GaAs solar energy cell performance degeneration prediction method in a space environment. The method comprises the following four steps: (1) establishment of a one-dimensional model of a GaAs solar energy cell in the space environment; (2) consideration of space particle radiation damage on an effective life of a carrier; (3) calculation of GaAs solar cell temperature; (4) realization of GaAs solar energy cell performance degeneration prediction through calculating a volt-ampere characteristic. According to the method, coupling effects of a space thermal vacuum environment and a radiation environment on the GaAs solar energy cell are considered, through establishing the one-dimensional model of the GaAs solar energy cell in the space environment, based on a minority continuity equation, degeneration case of the solar cell is analyzed and obtained through the volt-ampere characteristic. he invention has a practical value and a broad application prospect in the spatial solar cell electrical performance test technology field.

A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

The invention discloses a non-contact detection method of LED luminescence properties. The method comprises the following steps: a PN junction area for an LED device to be tested is irradiated with short-term pulsed light at the constant temperature, and the detection to the luminescence properties of the LED device to be tested is realized by detecting the self-luminescent spectrum of a PN junction; the invention also discloses a non-contact detection device based on the LED luminescence properties of the method; and the invention has the beneficial effects that the luminescence properties of the epitaxial wafer of the LED, the wafer or the single LED chip can be detected under the condition that the device to be tested is not contacted, therefore, the contact damage of the LED device to be tested is avoided, the detection and the screening of the LED products are propelled to the chip even to the epitaxial wafer link from the link of the finished products, and the cost of the LED is reduced.

One embodiment of the present invention is a method of detecting defects in a patterned substrate, including: (a) positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; (b) operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and (c) comparing the acquired images to a reference to identify defects in the patterned substrate.

Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

A method and apparatus for testing the mounting of an integrated circuit on a printed circuit board using a ball grid array comprises directing an inclined laser beam from a line scan laser sensor at the integrated circuit, detecting the position of the lower edge of the integrated circuit from laser light backscattered from the integrated circuit and printed circuit board, determining through a trigonometric calculation the height of the integrated circuit above the printed circuit board following soldering of the ball grid array and comparing the height with reference data. The integrated circuit is deemed to have been successfully mounted to the printed circuit board if the height falls within a predetermined range.

A semiconductor device capable of simplifying wiring work is provided. A semiconductor device includes a semiconductor element (insulated gate bipolar transistor IGBT) provided with an emitter main electrode and an emitter sense electrode, an integrated circuit having a detection terminal and a mold resin body that seals the semiconductor element and the integrated circuit, and a lead. The lead is provided with an inner lead part sealed in the mold resin body and electrically connected to the emitter sense electrode, an inner lead part sealed in the mold resin body and electrically connected to the emitter main electrode, and an outer lead part connected to the lead part on one side, connected to the inner lead part on the other side and exposed outside the mold resin body.

Integral measurement apparatus (50) and method for measuring layer thickness and bow in a wafer. The device comprises: a monochromatic light source (52), a white light source (100), a first switch (102) for switching between the white light source and the monochromatic light source, a switch for directing light from the switched light source to the semiconductor wafer A plurality of optical heads (56) at different locations on the surface (54), a first optical processor (104) for spectrally processing reflected light from the wafer, a second optical processor (104) for processing the reflected light to determine the degree of curvature in the wafer Two optical processors (58), and a second optical switch (106) for switching the reflected light from the wafer between the first optical processor and the second optical processor for spectral processing of white light to determine layer thickness , processes monochromatic light to determine the bend.

A test structure for resistive open detection using voltage contrast (VC) inspection and method for using such structure are disclosed. The test structure may include a comparator within the IC chip for comparing a resistance value of a resistive element under test to a reference resistance and outputting a result of the comparing that indicates whether the resistive open exists in the resistive element under test, wherein the result is detectable by the voltage contrast inspection.

A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.

The invention discloses a displacement damage dose detecting method for a spacecraft device, which belongs to the technical field of radiation detection in nuclear technology. The method comprises the following steps: scaling a photoelectric coupler integrated with an LED and a PD by using a radiation source to acquire a response curve of the increment of current transmission rate reciprocal of the photoelectric coupler during normalization and the displacement damage dose; then radiating the photoelectric coupler by using a ground displacement damage effect testing and evaluating source to acquire the increment of the current transmission rate reciprocal of the photoelectric coupler; and according to the increment of the current transmission rate reciprocal of the photoelectric coupler during specific radiation, searching the displacement damage dose corresponding to the increment in the response curve so as to detect the displacement damage dose at the moment. The method overcomes the influence of non-ideal single energy and secondary radiation of a general testing simulation source; and compared with the conventional method which only uses the LED to perform displacement damage detection, the testing system is simple and practical, and the error of optical coupling introduction is eliminated.

The invention provides a system and method for evaluating reliability of a thermoelectric element. The system comprises a vacuum device with a vacuum cavity, a sample testing device used for clamping the thermoelectric element to be tested, a hot-end temperature control device used for controlling the temperature of a heat source in the sample testing device, a cold-end temperature control device used for controlling the temperature of a heat sink in the sample testing device, a load device, a multiple-channel data collecting device and a control unit. The sample testing device is located in the vacuum cavity and comprises the heat source and the heat sink, and the thermoelectric element is located between the heat source and the heat sink. The load device and the thermoelectric element constitute a series connection circuit, and the load device controls current output of the thermoelectric element. The multiple-channel data collecting device is connected with the load device as well as the cold side and the hot side of the thermoelectric element so as to collect measurement signals of the thermoelectric element. The control unit is connected with the load device, the multiple-channel data collecting device and the hot-end temperature control device.

An apparatus and method is provided for determining the minority carrier diffusion length from the back side of the wafer within predetermined areas using pattern recognition system. In particular embodiments SPV probe includes transparent and non-transparent electrodes, to provide measurement of SPV and in area larger than optical beam and to provide accurate determination of diffusion length with spatial resolution <1 mm. The apparatus includes the ability to measure diffusion length from the areas under special areas within scribe line of patterned wafer. This apparatus and method provides a determination of the diffusion length to control metal contamination in product including patterned wafers including measurement within scribe lines and full wafer mapping.