302results about "Contactless testing" patented technology

The invention relates to the technical field of semiconductor device testing, in particular to a SiC MOSFET power cycle testing method which comprises the following steps: S1, building a composite environment testing platform, configuring dynamic testing parameters, automatically calculating a physical boundary and collecting sensor data in real time; s2, establishing a finite element simulation model based on the physical boundary and sensor data, and outputting optimized dynamic test parameters and a simulated stress distribution diagram; s3, synchronously applying composite stress according to the dynamic test parameters and the stress distribution diagram, and collecting multi-dimensional test data in real time; when the system is used, through dynamic boundary calculation and real-time data acquisition, the intelligent degree and reliability of the test are improved, the test period is shortened, the failure prediction accuracy is improved, the system is suitable for reliability evaluation of SiC MOSFET devices in the fields of new energy, aerospace and the like, a large number of physical tests are avoided through virtual simulation, and the reliability of the SiC MOSFET devices is improved. And reduction of device loss and resource waste is facilitated.

The invention discloses a three-temperature test method and device for a semiconductor chip, and relates to the technical field of semiconductor chip testing, and the method comprises the steps: inputting an initialization parameter set into an impedance temperature mapping model, carrying out the phase angle analysis and multi-band feature fusion through a broadband impedance spectrum analysis method, obtaining a chip junction temperature instantaneous value, and carrying out the measurement of the junction temperature instantaneous value. A PID controller is utilized to dynamically compensate a junction temperature instantaneous value of a chip, a fuzzy rule base inference engine is utilized to map the junction temperature instantaneous value into an execution instruction set, the execution instruction set is converted into a bidirectional voltage signal through pulse width modulation, a semiconductor chilling plate is driven to perform bidirectional temperature rise and drop control in a three-temperature environment, and real-time temperature change test data is synchronously acquired. According to the method, the junction temperature instantaneous value of the chip can be more accurately obtained by combining broadband impedance spectroscopy analysis with a multi-band characteristic fusion technology, and meanwhile, the PID controller is combined with the fuzzy rule base inference engine, so that a response can be quickly made under the condition that the temperature is quickly changed, and the response capability is greatly improved.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and / or magnetic field biases can be applied to the sample to provide additional information.

The invention discloses a high-capacity solid state disk single event effect testing method and device based on high-energy particles. The testing method comprises the steps that an SSD user data preset experiment is carried out; based on the data preset experiment, utilizing a device to carry out an irradiation test, judging whether the SSD module has errors such as single event locking and function interruption under an irradiation condition, determining a judgment result, carrying out quantitative calculation on the errors, and outputting a function test result; based on the function test result, performing a silent data destruction test in a post-irradiation test stage; recording silent data destruction and fixed bit error data according to the silent data destruction test; and based on the silent data destruction and the fixed bit error data, carrying out error characteristic quantification calculation, and outputting a calculation result. According to the method, parameterized evaluation of the radiation resistance of the SSD can be realized.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and / or magnetic field biases can be applied to the sample to provide additional information.

The invention relates to a secondary harmonic characterization system based on spatial light regulation and control. The secondary harmonic characterization system comprises an incident light path unit, a detection light path unit and a sample table, the incident light path unit sequentially comprises a laser, a polarizer, a half-wave plate, a light modulator, a long-pass optical filter and an incident objective lens in the light beam incident direction; a wafer is carried on the sample table; the detection light path unit sequentially comprises an adjustable detection objective lens, a light path adjuster, a polarization analyzer, a short-pass optical filter and a detector in the light beam reflection direction; according to the SHG signal representation detected by the detector, all control parameters of the light modulator, the adjustable detection objective lens, the light path adjuster and the sample table are regulated and controlled, and the SHG signal receiving efficiency of the detector is improved. According to the invention, it is ensured that the detector efficiently receives the SHG signal, and the SHG characterization precision is improved.

The invention provides a wafer ultrasonic detection method and device, and the method comprises the steps: carrying out the global ultrasonic scanning of a whole wafer along a two-dimensional spiral path, obtaining a plurality of initial detection echo signals, forming a global echo signal group, and recording the position coordinates of the initial detection echo signals; determining a suspected bubble area based on the global echo signal group; the suspected bubble area at least has an initial measurement echo signal whose intensity is lower than a preset signal intensity threshold value; positioning the position coordinate of a suspected bubble area based on the position coordinate of the initially measured echo signal; performing local ultrasonic scanning on the suspected bubble area to obtain a plurality of retest echo signals to form a local echo signal group; judging whether bubbles exist in the suspected bubble area based on the local echo signal group and determining defect types of the bubbles; the resolution of the global ultrasonic scanning is lower than that of the local ultrasonic scanning. According to the invention, global low-resolution scanning along the spiral path and local high-resolution scanning of the wafer can be realized, and the dual advantages of efficiency and accuracy are achieved.

The invention belongs to the technical field of power semiconductor monitoring, and particularly relates to an acoustic emission monitoring system and method for short-circuit failure of a crimping packaging power module. The monitoring system comprises a sonic sensor array, a module characteristic parameter measuring unit, a multi-channel signal acquisition unit and an upper computer. The sonic sensor array is used for measuring a failure instantaneous sound signal of the crimping packaging power module; the module characteristic parameter measuring unit is used for measuring failure characteristic parameters; the multi-channel signal acquisition unit is used for transmitting all the received data to the upper computer; and the upper computer judges whether the crimping packaging power module has short-circuit failure or not by identifying the voiceprint information of the sound signals, and if the short-circuit failure occurs, the failure position is positioned based on the difference value between the failure instantaneous sound signal receiving time and the failure characteristic parameter abrupt change time of each sound wave sensor. The method has the characteristics of wide application occasion, non-intrusive installation and the like, and is beneficial to online monitoring of short-circuit failure of the crimping packaging power module and rapid positioning of failure points.

A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

The invention relates to the field of performance testing, in particular to a conductivity testing system for a diode, which draws a volt-ampere characteristic curve of the diode through a data analysis unit according to voltage at two ends of the diode and current flowing through the diode, and calculates the conductivity of the diode according to a fitting value of the volt-ampere characteristic curve and a standard curve. And calculating the conductivity characterization parameter of the diode according to the maximum temperature difference value of the diode image and the thermal image, judging whether to test the conductivity of the diode or not through the conductivity test unit according to the conductivity characterization parameter of the diode, and adjusting the output voltage of the power supply module. According to the invention, the conductivity of the diode is comprehensively represented through a plurality of indexes, so that the accuracy and reliability of the test are improved. The audio frequency in the process of testing the conductivity of the diode is obtained, and whether the conductivity of the diode is abnormal or not is judged by combining the characterization parameters of the conductivity of the diode.

The invention relates to a photomultiplier testing device and a photomultiplier testing method, in particular to a pulse saturation recovery characteristic testing device and a pulse saturation recovery characteristic testing method for a micro-channel plate type photomultiplier, and solves the problem that an existing MCP-PMT pulse saturation recovery characteristic testing device does not meet actual application requirements. And the pulse saturation recovery characteristics under different saturation depths and different recovery degrees cannot be evaluated. According to the invention, a pulse saturation recovery characteristic test is carried out on the MCP-PMT by using a laser diode and an optical attenuation sheet in a camera obscura environment, a pulse signal generator, a power divider, a combiner, a high-voltage source, a digitizer and a data processing unit, and the pulse signal generator successively generates two paths of driving pulse signals with different pulse widths. The method accords with the actual application requirement of the MCP-PMT working in a linear state, the measurement result can reflect the saturation recovery characteristic of the MCP-PMT in the actual application, and the pulse saturation recovery characteristic of the MCP-PMT under different saturation depths and different recovery degrees can be evaluated.

The invention discloses a photo-generated carrier transient transport plotting system and method with high time-space resolution, and the method comprises the steps: generating two beams of femtosecond laser by a femtosecond laser module, and respectively taking the two beams of femtosecond laser as pumping laser and detection laser; pump laser enters the microscopic module through the pump light frequency doubling module, the delay line module and the first chopping module. The pumping laser enters a first chopping module, the detection laser enters a detection light scanning module through a second chopping module, space scanning control is carried out on the detection laser, then the pumping laser and the detection laser roughly coincide at the microscopic module and then enter a sample photoelectric measurement base module, and the detection laser enters a signal acquisition module after being reflected by a sample. According to the invention, the transient transport process of the current carrier can be represented, the dynamic process of the current carrier can be clarified, key factors influencing the performance of the device can be analyzed, and theoretical and experimental guidance can be provided for the performance improvement of the photoelectric device.

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

A light emitting element inspection method including: forming a plurality of light emitting element rods by etching a plurality of semiconductor material layers stacked on a growth substrate; forming a protective layer covering a portion of a top surface and a portion of side surfaces of the plurality of light emitting element rods and a contact electrode on the protective layer; forming a metal layer on the side surfaces of the plurality of light emitting element rods and on a portion of the growth substrate on which none of the plurality of light emitting elements rods is located; forming a contact pad connected to the metal layer on the growth substrate; and applying a test power to the contact electrode and the contact pad.

The invention relates to the field of intelligent testing, in particular to a micro-area bandwidth testing system and method for a semiconductor photoelectric device. A signal processing and analysis algorithm based on artificial intelligence and deep learning is introduced to perform signal decomposition and feature analysis on a weak electric signal, so that component signal features in the weak electric signal and signal component distillation aggregation semantic representation among the component signal features are extracted; therefore, a light current signal value is decoded and generated. In this way, high consistency can be kept under different test conditions, and the accuracy and reliability of bandwidth measurement are improved.

A test system and a method for data verification for the same are provided. The test system includes a main control unit having a control host and an analyzer, and a probe assembly that includes at least one probe-head with probe tips and a cable linked to the analyzer. The probe assembly is configured to contact one of testing circuits of a calibration standard assembly via the probe tips for performing a calibration process. In the method, incident data is inputted to the calibration standard assembly for generating measured uncorrected data, and afterwards the measured uncorrected data can be verified by performing relative comparison on any two sets of the measured uncorrected data.

The invention provides a ray detection system and method for an electronic product, and the system comprises an anti-radiation housing which is provided with an accommodation cavity; the radiation source is arranged in the accommodating cavity; the object carrying device is arranged in the accommodating cavity in a push-pull manner and is used for placing a to-be-detected electronic product, and the side surface, which is not wrapped by the accommodating cavity, of the object carrying device is made of an anti-radiation material; the detector is arranged in the containing cavity, and the radiation source and the detector are located on the two opposite sides of the object carrying device respectively; and the control device is arranged outside the anti-radiation shell, is in communication connection with the radiation source and the detector, and is used for controlling the radiation source to emit beams, receiving a scanning image of the detector and processing the scanning image to obtain a detection result. The ray detection system is high in detection efficiency, small in occupied area and flexible in use scene.

Systems, apparatuses, and methods provide for predicting a remaining useful life of semiconductors utilizing quantum sensors. A layer of 2-D material of the quantum sensor is excited via a microwave field source and a light source of a quantum sensor while also subject to a magnetic field, where the quantum sensor is located adjacent a semiconductor device. The excitation of the layer of 2-D material is sensed, via a photodetector of the quantum sensor. A magnetic field, a temperature, and / or a strain field effect of the semiconductor device are measured based on the sensed excitation of the layer of 2-D material. A remaining useful life of the semiconductor device is predicted based on one or more of the measured magnetic field, the measured temperature, or the measured strain field effect.

The present invention discloses an experimental apparatus and a test method for a pulse laser irradiation wide bandgap power device. The apparatus includes an optical path coupling system, a circuit test system, a temperature control system, and an interaction control system. According to the present invention, irradiation sensitive region locating, irradiation transient current tests, irradiation sensitive condition tests, and irradiation degradation tests for the wide bandgap power device are implemented, and advantages of convenience in experiments, simple operation, automated tests, comprehensive and accurate test results, and the like are achieved.

The invention relates to a silicon wafer defect detection method. The method comprises the following steps: providing a silicon wafer sample with oxygen concentration lower than 9ppma; carrying out first heat treatment on the silicon wafer sample under a first preset condition so as to generate oxygen evolution nucleation in a P-band region, a B-band region and / or an IDP region; performing secondary heat treatment on the silicon wafer sample under a second preset condition to generate oxygen evolution nucleation in a VDP region; performing third-time heat treatment on the silicon wafer sample under a third preset condition, so that oxygen evolution nuclei generated in the first-time heat treatment and the second-time heat treatment grow; and carrying out minority carrier lifetime test on the silicon wafer sample. Through a three-section heat treatment method, the oxygen precipitation amount of a part of crystal characteristic areas is increased, so that crystal characteristic area boundary distinguishing can be clearly carried out on a silicon wafer with the oxygen concentration below 9ppma.

The invention discloses an MO-TFT trap state capture parameter extraction method and system, and the method comprises the steps: applying a laser excitation signal to an active layer region of an MO-TFT, and enabling the laser excitation signal to enter the active layer region of the MO-TFT for regulating and controlling the surface potential # imgabs0 # and inducing different transient light current responses; applying a bias voltage VDS between the source electrode and the drain electrode of the MO-TFT to ensure that the device works in a deep linear region; measuring the transient photocurrent response of the MO-TFT, and recording a transient photocurrent change curve; and calculating and extracting trap state capture parameters. According to the method, relaxation time and corresponding trap state capture parameters are extracted through measurement and fitting of transient current changes, and accurate characterization of the trap state characteristics of the MO-TFT is achieved. The method provided by the invention can effectively obtain trap state capture kinetic parameters, has high test precision and model applicability, and can be widely applied to reliability evaluation and optimization design of the MO-TFT device.

The invention relates to an online evaluation system and method for a degradation effect of a power device, and relates to the technical field of testing. The system comprises a high-power microwave irradiation device, a transient extreme stress loading device and a semiconductor parameter analyzer, the power device is arranged in the high-power microwave irradiation device and is respectively connected with the transient extreme stress loading device and the semiconductor parameter analyzer; the high-power microwave irradiation device is used for providing high-power microwave irradiation stress for the power device; the transient extreme stress loading device is used for providing transient extreme stress for the power device; and the semiconductor parameter analyzer is used for acquiring the initial electrical parameters of the power device, acquiring the test electrical parameters of the high-power microwave irradiation stress and the transient extreme stress applied to the power device, and determining the online evaluation result of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters. According to the method, the degradation of the power device under the high-power microwave irradiation stress and the transient extreme stress can be evaluated on line.

The utility model discloses a test system for testing the transient photoelectric performance of a semiconductor photoelectric device, and the system comprises a test board which is used for fixing a device to be tested; the steady-state light source emits steady-state light to irradiate the to-be-detected device so as to generate a steady-state photovoltage signal in the to-be-detected device; the transient pulse light source emits pulse light to irradiate the to-be-tested device so as to generate a transient photovoltage signal in the to-be-tested device; the light path selection unit is used for cutting off or starting the irradiation of the steady-state light and the pulsed light to the device to be detected; the light intensity adjusting unit is arranged between the transient pulse light source and the device to be tested so as to adjust the pulse light; the signal acquisition unit and the to-be-tested device form a test loop and acquire steady-state photovoltage and transient photovoltage signals; the potentiometers are arranged at two ends of the signal acquisition unit in parallel; the signal generator is used for generating a pulse voltage signal so as to be selectively loaded in the test loop; and a control unit that controls the test system to perform any one of a linear boost charge extraction test, a transient photovoltage test, and a transient photocurrent test.

The invention relates to a pulse laser irradiation experimental device. Comprising an optical parameter measurement platform, an optical path coupling module, a photoelectric test module, an electrical test platform, a first control system and a second control system, the first control system is used for fitting the elliptic polarization state change parameters with a scanning model to obtain the refractive index and the extinction coefficient of the single-layer film; the second control system is used for inputting the refractive index, the extinction coefficient, the reflectivity and the transmissivity of the thin film into a device incidence model to calculate effective pulse laser energy when pulse laser with different wavelengths penetrates through each layer of thin film to reach an active region in the to-be-measured wide bandgap power device, and obtaining an equivalent heavy ion LET value according to the effective pulse laser energy; and the light path coupling module, the photoelectric test module and the electrical test platform are controlled to carry out closed-loop adjustment on pulse laser energy. According to the invention, accurate control and adjustment of pulse laser energy are realized.

The invention discloses a device electroluminescence characteristic test system comprising an AC voltage signal source for providing an AC voltage signal; the conductive test bench comprises a base station and a contact probe, the base station is made of a conductive material and is used for placing a sample to be tested, the contact probe comprises a conductive material and is used for forming electric contact with the sample to be tested, and during testing, the sample to be tested is placed on the base station, and the contact probe is used for forming electric contact with the sample to be tested. AC voltage generated by the AC voltage signal source is applied to a to-be-tested sample through the contact probe, and the AC voltage is large enough to drive the to-be-tested sample to emit light; the series resistors are used for forming series connection with a sample to be tested; and a detection instrument. According to the method, the problems of etching damage and complicated operation caused by metal contact in a traditional EL detection method and the problem of inaccurate spectrum test in a PL detection method are solved, a simple and efficient novel EL characterization means without pretreatment is realized, and the method is suitable for rapid test and performance evaluation of various material systems and luminescent devices.

The invention relates to a bending test method, system and device for a flexible OLED screen and a storage medium, and the method comprises the following steps: obtaining preset bending data of a target flexible OLED screen, and carrying out the dynamic bending test of the target flexible OLED screen based on the preset bending data; in the dynamic bending test process, performing non-contact detection on the target flexible OLED screen to obtain a detection image; judging whether a damage area exists in the detection image or not, and if yes, inputting the detection image into a preset damage model to determine the damage level of the target flexible OLED screen; and if the damage level exceeds a preset damage level, performing damage analysis on the damage area to obtain a damage analysis result, and formulating an OLED screen production management strategy based on the damage area and the damage analysis result. The technical problems that the damage risk in the testing process is increased, and the testing efficiency and accuracy are limited are solved.

A method for non-contact detection. The method includes providing a semiconductor device. The semiconductor device has an epitaxial stack, a first electrode and a second electrode connected to the epitaxial stack. The method further includes applying a microwave to the first electrode to cause the semiconductor device to emit light and detecting the light emitted from the semiconductor device.

The invention relates to the field of semiconductor device and integrated circuit research, in particular to a semiconductor device dose rate effect laser simulation system. Multiple wavelengths and a wide energy range are achieved through the optical fiber laser pulse seed source assembly and the solid laser amplifier assembly, the pulse width can range from 1 ns to 100 microseconds, variable complex waveforms such as square waves, rectangular waves, sine waves and pulse strings are achieved, and pulse laser with the energy range from the nanojoule level to the joule level and adjustable wavelengths and waveforms can be output according to requirements. The high-low energy laser adopts a common-path design, so that the system integration degree is improved; light spots are adjustable from centimeter level to micron level, and global irradiation and micro-area positioning and scanning of an irradiation sample can be realized. According to the invention, dose rate effects under different conditions can be accurately and flexibly simulated, the blank of a high-energy, variable-waveform and multi-wavelength dose rate effect laser simulation system is filled up, and an efficient solution is provided for the reliability research of devices under a complex irradiation environment.

The invention relates to the technical field of semiconductor production, and particularly discloses a multi-dimensional adjustment optical detection device which comprises a supporting assembly, an adjustment assembly and an optical assembly. The optical assembly comprises a first optical fiber seat, a second optical fiber seat and a dichroscope. The optical assembly is arranged on the supporting assembly, and components on the supporting assembly can be driven to move along multiple axes through the adjusting assembly. In the scheme, the first optical fiber seat and the second optical fiber seat are both integrated on the supporting assembly, when optical detection of different wavelengths needs to be carried out on the detected device, detection of different wavelengths can be carried out on the detected device under the condition that equipment is not switched, and the detection efficiency is improved; meanwhile, the supporting assembly can move along multiple axes, it is ensured that the detected object can be irradiated by a light path, and therefore the detection effectiveness is ensured.

The embodiment of the invention provides a light-emitting device detection device and method, and relates to the technical field of display. In the light-emitting device detection device and method, the light-emitting device grabbing unit grabs the light-emitting device, the second coil in the light-emitting grabbing unit induces the change of the electromagnetic signal in the first coil to generate the induction current used for driving the light-emitting device, and the detection unit detects whether the light-emitting device normally emits light under the action of the induction current. Compared with the prior art, physical contact points and connecting lines required in the test can be reduced, the possibility of damaging the light-emitting device by manual intervention is reduced, meanwhile, the performance of the light-emitting device can be effectively detected, and the detection accuracy is improved.