11 results about "Surface photovoltage" patented technology

A method for in-situ melting preparation of single-layer MoS2-WS2 lateral heterostructure and application, using oxide MoO3 as molybdenum source, and metal W as tungsten source for reaction, because the metal tungsten is difficult to evaporate to form tungsten vapor, so first in-situ deposition of tungsten on the substrate, then add metal Te as flux, so that the metal tungsten in-situ melting on the substrate, and MoO3 and S powder in-situ reaction on the substrate to form MoS2-WS2 lateral heterojunction, can effectively avoid the formation of thermodynamic more stable alloy. We use three temperature zone tube furnace to control the temperature and heating rate of S powder, MoO3 and substrate respectively, realize the efficient controllable synthesis of heterostructure. Surface photovoltage microscopy shows that this heterojunction can significantly promote the spatial separation of photo-generated electrons and holes, significantly prolong the carrier lifetime, so it has important application potential in solar cells, photo (electric) catalysis and new photoelectric devices.

The invention provides a method for detecting metal pollutants on the surface of a silicon wafer, which comprises the following steps of: performing diffusion treatment on the silicon wafer to be detected, so that the metal pollutants on the surface layer of the silicon wafer to be detected are diffused into the silicon wafer; carrying out surface treatment on the silicon wafer to be detected so as to remove surface oxides and residual metals of the silicon wafer to be detected; and then whether metal pollutants exist on the surface of the silicon wafer to be detected or not is judged through mu-PCD minority carrier lifetime detection and / or SPV diffusion length detection. According to the method, surface metal is promoted to be diffused into the silicon wafer body through heat treatment, and recognition of low-concentration metal pollution is achieved in combination with minority carrier lifetime detection and / or diffusion length testing means.

The invention provides a semiconductor electric field characterization method based on an absorption spectrum e index tail, and the method comprises the steps: obtaining an actual spectrum of a to-be-detected sample, the actual spectrum being an actual absorption spectrum or an actual surface photovoltage spectrum; an electric field value is set, a fitting spectrum is obtained according to fitting of the electric field value, the fitting spectrum is a fitting absorption spectrum or a fitting surface photovoltage spectrum, and the error between the fitting spectrum and the actual spectrum is calculated; if the error meets a convergence condition, taking the electric field value as a characterization electric field of the to-be-detected sample; and if the error does not meet the convergence condition, resetting the electric field value, fitting according to the reset electric field value to obtain a fitted spectrum, and calculating the error between the fitted spectrum and the actual spectrum until the error meets the convergence condition. According to the method, excessive auxiliary equipment does not need to be adopted, and single-point in-situ independent measurement can be carried out on any position of the sample to be measured.

The invention discloses a testing method, device and system and a storage medium, and the testing method employs a photoluminescence resistance testing method and / or an electroluminescent resistance testing method to measure the local resistance of a preset area on a to-be-tested cell, and the local resistance is the thin-layer resistance of the preset area. According to the method, the sheet resistance of the to-be-measured battery piece is calculated according to the local resistance and the transverse transmission path of the carriers in measurement, the sheet resistance of the to-be-measured battery piece is measured, the local resistance is measured based on the photoluminescence resistance test and / or the photoluminescence resistance test, the sheet resistance is calculated in combination with the local resistance and the transverse transmission path of the carriers, and the sheet resistance of the to-be-measured battery piece is measured. Compared with a four-probe method, the test method is simpler, more convenient and easier to implement, is less affected by surface charges compared with a surface photovoltage method, does not need to calibrate the surface charges regularly, and improves the reliability of test results on the basis of reducing the complexity of the test method.

The invention relates to a device (100) for the contactless determination of a surface photovoltage (USPV) and a photoemission current (i) of a test object (2), wherein the device (100) comprises: - an electrically conductive surface (1) on which the object under investigation (2) can be positioned, - a voltage source (5) designed to generate an electrical potential in the electrically conductive surface (1), - an electrode (3) arranged opposite the electrically conductive surface (1), such that when the object under investigation (2) is positioned on the electrically conductive surface (1), it is positioned between the electrically conductive surface (1) and the electrode (3), - a transimpedance amplifier (TIA), wherein the input (21) of the transimpedance amplifier (TIA) is connected to the electrode (3) and the output (22) of the transimpedance amplifier (TIA) is connected to a surface photovoltage signal output (9), at which an output voltage (UA) output by means of the transimpedance amplifier (TIA) can be measured, which is indicative of the surface photovoltage (USPV) of the object under investigation (2), as well as - a frequency response correction device (10) for at least partial compensation of a frequency response fall-off of the output voltage (UA) of the transimpedance amplifier (TIA), which remains indicative for the photoemission current (i), wherein an input (31) of the frequency response correction device (10) is connected to the output (22) of the transimpedance amplifier (TIA), and an output (32) of the frequency response correction device (10) is connected to or forms a photoemission current output (11) at which the at least partially frequency response-compensated output voltage (UA) can be measured. Furthermore, the invention relates to a method for non-contact measurement of the surface photovoltage (USPV) and a method for non-contact measurement of the photoemission current (i) of an object under investigation (2) using the device (100).

Provided in the present disclosure are a solar cell, comprising a perovskite light-absorbing layer, wherein the average grain size of perovskite grains in the perovskite light-absorbing layer is 500 nm to 1500 nm, and the surface photovoltage of the perovskite light-absorbing layer that is measured by means of Kelvin probe force microscopy is greater than or equal to 0 mV and less than or equal to 60 mV. The present disclosure further relates to a preparation method for a solar cell, and a photovoltaic assembly comprising the solar cell, and a power generation apparatus and an electric apparatus.

Method for measuring an iron concentration in a p-type silicon wafer (W) based on a measurement employing a surface photovoltage, hereinafter referred to as SPV, method, wherein the method for measuring comprises: Performing the measurement in a measurement mode in which the p-type silicon wafer (W) is irradiated with a plurality of lights having different wavelengths during the same time period, the measurement being performed under the following conditions: (i) the time between readouts is 35 ms or more and 120 ms or less, and a time constant is 20 ms or more, or the time between readouts is 10 ms or more and less than 35 ms and the time constant is 100 ms or more, and (ii) a number of readouts is 12 times or less, where the number of readouts means the number of SPV signals that are captured in an SPV measurement, The time constant represents the acquisition time during which each SPV signal is acquired, out of the number of SPV signals. The time between readouts means the time interval between times at which successive SPV signals are recorded.

The invention relates to a device (100) for contactlessly determining the surface photovoltage (USPV) and the photoemission current (i) of an object (2) to be examined, wherein the device (100) comprises: an electrically conductive surface (1) on which the object (2) to be examined can be positioned; a voltage source (5) which is designed to generate an electrical potential in the electrically conductive surface (1); an electrode (3) which is situated opposite the electrically conductive surface (1) such that the object (2) to be examined, when positioned on the electrically conductive surface (1), is located between the electrically conductive surface (1) and the electrode (3); a transimpedance amplifier (TIA), the input (21) of the transimpedance amplifier (TIA) being connected to the electrode (3) and the output (22) of the transimpedance amplifier (TIA) being connected to a surface photovoltage signal output (9) on which an output voltage (UA) can be measured, the output voltage being output by means of the transimpedance amplifier (TIA) and being indicative of the surface photovoltage (USPV) of the object (2) to be examined; and a frequency response correction device (10) for at least partly compensating for a frequency response drop of the output voltage (UA) of the transimpedance amplifier (TIA), the output voltage additionally being indicative of the photoemission current (i). An input (31) of the frequency response correction device (10) is connected to the output (22) of the transimpedance amplifier (TIA), and an output (32) of the frequency response correction device (10) is connected to or forms a photoemission current output (11) on which the at least partly frequency response-compensated output voltage (UA) can be measured. The invention further relates to a method for contactlessly measuring the surface photovoltage (USPV) and to a method for contactlessly measuring the photoemission current (i) of an object (2) to be examined by means of the device (100).

The invention relates to a device (100) for the contactless determination of a surface photovoltage (USPV) and a photoemission current (i) of a test object (2), wherein the device (100) comprises: - an electrically conductive surface (1) on which the object under investigation (2) can be positioned, - a voltage source (5) designed to generate an electrical potential in the electrically conductive surface (1), - an electrode (3) arranged opposite the electrically conductive surface (1), such that when the object under investigation (2) is positioned on the electrically conductive surface (1), it is positioned between the electrically conductive surface (1) and the electrode (3), - a transimpedance amplifier (TIA), wherein the input (21) of the transimpedance amplifier (TIA) is connected to the electrode (3) and the output (22) of the transimpedance amplifier (TIA) is connected to a surface photovoltage signal output (9), at which an output voltage (UA) output by means of the transimpedance amplifier (TIA) can be measured, which is indicative of the surface photovoltage (USPV) of the object under investigation (2), as well as - a frequency response correction device (10) for at least partial compensation of a frequency response fall-off of the output voltage (UA) of the transimpedance amplifier (TIA), which remains indicative for the photoemission current (i), wherein an input (31) of the frequency response correction device (10) is connected to the output (22) of the transimpedance amplifier (TIA), and an output (32) of the frequency response correction device (10) is connected to or forms a photoemission current output (11) at which the at least partially frequency response-compensated output voltage (UA) can be measured. Furthermore, the invention relates to a method for non-contact measurement of the surface photovoltage (USPV) and a method for non-contact measurement of the photoemission current (i) of an object under investigation (2) using the device (100).

The invention provides a solar cell. The solar cell comprises a perovskite light absorption layer; wherein the average particle size of perovskite crystal grains in the perovskite light absorption layer is 500nm to 1500nm, and the surface photovoltage of the perovskite light absorption layer, which is measured by a Kelvin probe force microscope method, is greater than or equal to 0mV and less than or equal to 60mV. The invention further relates to a preparation method of the solar cell, a photovoltaic module comprising the solar cell, a power generation device and a power utilization device. The solar cell of the present application has improved open circuit voltage and photoelectric conversion efficiency.

The invention discloses a frequency domain surface photovoltage inversion method for semiconductor surface charge dynamics analysis. According to the method, a chopping modulation light source is utilized to apply multi-frequency excitation to a sample, and a plurality of surface photovoltage signals under each frequency are measured by combining an atomic force microscope-Kelvin probe force microscope system. According to the method, a frequency domain linear system model is constructed, a photon-generated carrier response process is described through a convolution relation between a kernel function matrix and a complex relaxation time spectrum, an objective function is constructed through joint sparse constraint and total variation regularization optimization, an alternating direction multiplier method is adopted for solving, and a photon-generated carrier response model is constructed. And a high-resolution complex relaxation time distribution spectrum is obtained. The method can be used for identifying separation and transfer behaviors of electrons and holes on different time scales, and full-spectrum analysis of the surface photovoltage process is achieved. According to the method, nanosecond-to-millisecond-level time resolution measurement can be realized without a picosecond-level laser system, and the method has wide applicability and popularization value.