Non contact method and apparatus for measurement of sheet resistance of P-N junctions

Abstract

A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Description

RELATED APPLICATIONS[0001]U.S. application Ser. No. 12 / 319,733 Non-contact method and apparatus for measurement of sheet resistance of P-N junction filed on Jan. 12, 2009, is a division of U.S. application Ser. No. 10 / 688,766 filed on Oct. 15, 2003, now U.S. Pat. No. 7,362,088.BACKGROUND OF THE INVENTION[0002]The present invention relates to the measurement of the sheet resistance in the upper layer of p-n junction.[0003]Advances in semiconductor technology increase requirements to monitor epi and ion implant sheet resistance, Rs, in the range 50-5000 ohms / square.[0004]Currently 4-point probe technique is widely used for sheet resistance measurement. In the case of ultra shallow p-n junctions this technique has disadvantages: mechanical probes can poke through the implant layer; and probe pressures necessary for making ohmic contact with an implant layer can create P-N junction leakage between the implant layer and the underlying opposite conductivity substrate.[0005]For these reaso...

AI Technical Summary

Benefits of technology

Enables accurate measurement of sheet resistance with improved spatial resolution and sensitivity for low, medium, and high dose implant layers, reducing edge effects and systematic errors, and providing precise measurements close to the wafer edge.

Problems solved by technology

In the case of ultra shallow p-n junctions this technique has disadvantages: mechanical probes can poke through the implant layer; and probe pressures necessary for making ohmic contact with an implant layer can create P-N junction leakage between the implant layer and the underlying opposite conductivity substrate.

For these reasons, the 4-point probe techniques are inadequate for the requirements of ultra shallow P-N junction monitoring needs.

This technique has follows disadvantages: since only attenuated SPV signals are measured outside the illumination area this approach can not provide good enough spatial resolution and high sensitivity for measurements of sheet resistance Rs<400 Ohms / square in ultra shallow P-N junction with high dose of implant.

As a result this model will give additional systematic error since capacitance of these thin electrodes should depends non linear on its distance from the wafer surface and linearity condition does not checked within illumination area.

This probe configuration does not allow produce accurate measurement close to the edge of the wafer.

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