3296results about "Contactless circuit testing" patented technology

A system is described for using with fine pitch devices including singulated bare die, semiconductor wafers, chip sized packages, printed circuit boards, and the like to determine that the fine pitch device is not faulty. The system is also usable for transfer of data, energy, for collecting data measurements or measurement-related data between two pieces, and for effecting at least part of an identification process. The disclosed embodiment includes a substrate having a circuit pad pattern in the mirror image of the pattern of contact points, usually bond pads of the fine pitch device to be connected. A conductive elastomeric probe is permanently formed on the circuit pads of the substrate such that the probe is malleable and allows repetitive electrical contact. The system may also contain an alignment template for orienting the fine pitch device onto the elastomeric probes of the contact point pattern of the substrate.

Disclosed are methods and apparatus for efficiently managing IC chip yield learning. In general terms, as each wafer lot moves through fabrication, yield information is obtained from each set of test structures for a particular process or defect mechanism. The nature of the yield information is such that it may be used directly or indirectly to predict product wafer test yield. In one implementation, the yield information includes a systematic yield (Y.sub.0), a defect density (DD), and a defect clustering factor (.alpha.) determined based on the inspected test structure's yield. A running average of the yield information for each process or defect mechanism is maintained as each wafer lot is processed. As a particular wafer lot moves through the various processes, a product wafer-sort test yield may be predicted at any stage in the fabrication process based on the running-average yield information maintained for previously fabricated wafer lots.

The present invention discloses a method and system compensating for thermally induced motion of probe cards used in testing die on a wafer. A probe card incorporating temperature control devices to maintain a uniform temperature throughout the thickness of the probe card is disclosed. A probe card incorporating bi-material stiffening elements which respond to changes in temperature in such a way as to counteract thermally induced motion of the probe card is disclosed including rolling elements, slots and lubrication. Various means for allowing radial expansion of a probe card to prevent thermally induced motion of the probe card are also disclosed. A method for detecting thermally induced movement of the probe card and moving the wafer to compensate is also disclosed.

A main power supply continuously provides a current to a power input terminal of an integrated circuit device under test (DUT). The DUT's demand for current at the power input terminal temporarily increases during state changes in synchronous logic circuits implemented within the DUT. To limit variation (noise) in voltage at the power input terminal arising from these temporary increases in current demand, a charged capacitor is connected to the power input terminal during each DUT state change. The capacitor discharges into the power input terminal to supply additional current to meet the DUT's increased demand. Following each DUT state change the capacitor is disconnected from the power input terminal and charged to a level sufficient to meet a predicted increase in current demand during a next DUT state change.

Disclosed is a semiconductor die having a lower test structure formed in a lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end. The first end is coupled to a predetermined voltage level. The semiconductor die also includes an insulating layer formed over the lower metal layer. The die further includes an upper test structure formed in an upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure. The upper metal layer is formed over the insulating layer. In a specific implementation, the first end of the lower test structure is coupled to ground. In another embodiment, the semiconductor die also includes a substrate and a first via coupled between the first end of the lower test structure and the substrate. In yet another aspect, the lower test structure is an extended metal line, and the upper test structure is a voltage contrast element. Methods for inspecting and fabricating such semiconductor die are also disclosed.

Disclosed is a semiconductor die having an upper layer and a lower layer. The die includes a lower test structure formed in the lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end, wherein the first end is coupled to a predetermined voltage level. The die also has an insulating layer formed over the lower metal layer and an upper test structure formed in the upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure, and the upper metal layer being formed over the insulating layer. The die further includes at least one probe pad coupled with the upper test structure. Preferably, the first end of the lower test structure is coupled to a nominal ground potential. In another implementation, the upper test structure is a voltage contrast element. In another embodiment, a semiconductor die having a scanning area is disclosed. The semiconductor die includes a first plurality of test structures wherein each of the test structures in the first plurality of test structures is located entirely within the scanning area. The die includes a second plurality of test structures wherein each of the test structures in the first plurality of test structures is located only partially within the scanning area. The first plurality of test structures or the second plurality of test structures has a probe pad coupled to at least one test structure.

A probe for contacting and testing ICs on a semiconductor device includes a dielectric insulating material tip. The dielectric tip does not contaminate the surface being probed unlike metal probe tips. A contact scrub is further not required with signals being capacitively or inductively coupled from the probe tip to the IC. Testing can be performed during early fabrication steps of the wafer without the need for applying a metalization layer to the wafer to form bond pads. Testing can be performed by inductively coupling an AC signal to the probe tip, with coupling enhanced by including a magnetic material in the dielectric probe tip. Using an AC test signal enables testing of ICs without requiring separate power and ground connections.

A sensor for contactlessly detecting currents, has a sensor element having a magnetic tunnel junction (MTJ), and detection circuitry, the sensor element having a resistance which varies with the magnetic field, and the detection circuitry is arranged to detect a tunnel current flowing through the tunnel junction. The sensor element may share an MTJ stack with memory elements. Also it can provide easy integration with next generation CMOS processes, including MRAM technology, be more compact, and use less power. Solutions for increasing sensitivity of the sensor, such as providing a flux concentrator, and for generating higher magnetic fields with a same current, such as forming L-shaped conductor elements, are given. The greater sensitivity enables less post processing to be used, to save power for applications such as mobile devices. Applications include current sensors, built-in current sensors, and IDDQ and IDDT testing, even for next generation CMOS processes.

A method and apparatus for locating integrated circuit defects associated with different aspects of the integrated circuit industry. The integrated circuit is configured in a known failing mode, with a first power supply providing a constant voltage and variable current. Next, one or more additional dedicated power supplies are connected to various points of interest throughout the integrated circuit, wherein these dedicated power supplies have a preset current and the voltage is allowed to vary. The integrated circuit is then scanned with a laser beam, which induces current changes on in the integrated circuit especially in defective areas. These current changes then cause voltage changes on the dedicated power supplies. When such a voltage change occurs on the dedicated power supplies, its position is noted.

In accordance with the invention, there are electron beam inspection systems, electron beam testable semiconductor test structures, and methods for detecting systematic defects, such as, for example contact-to-gate shorts, worm hole leakage paths, holes printing issues, and anomalies in sparse holes and random defects, such as, current leakage paths due to dislocations and pipes during semiconductor processing.

Classifying a portion of an electrical signal propagating through a conductor includes digitizing the electrical signal to provide a digitized signal, providing a plurality of stored digitized signals, wherein each stored digitized signal corresponds to a type of fault for the conductor, comparing the digitized signal to each of the stored digitized signals to determine a score therefore, if the score is less than a predetermined value for a particular one of the stored digitized signals, classifying the portion of the electrical signal as a fault corresponding to the particular one of the stored digitized signals, and, if none of the scores are less than the predetermined value, classifying the portion of the electrical signal as having no fault. Classifying a portion of an electrical signal may also include converting the digitized electrical signal to reflection coefficients.