Metal contamination immediate monitoring method of semiconductor wafer

Abstract

A metal contamination immediate monitoring method of a semiconductor wafer is provided to include: performing a rapid thermal oxidation process on the wafer; and performing surface photo-voltage measurement on the wafer after the rapid thermal oxidation process.

Description

technical field [0001] The present invention relates to a monitoring method of a semiconductor manufacturing process, and in particular to a real-time monitoring method of metal contamination of a semiconductor wafer. Background technique [0002] In the semiconductor manufacturing process, the metal contamination of the wafer will have an adverse effect on the device characteristics of the product. For example, heat treatment of the product will allow heavy metals such as iron (Fe) or nickel (Ni) to enter the silicon wafer through diffusion, and form a deep energy level in the band gap to serve as a carrier capture center or The recombination centers cause pn junction leaks and life reduction in the device. Therefore, in order to monitor the degree of metal contamination in the manufacturing process, a monitoring method capable of real-time monitoring and high reliability is sought. [0003] In the image sensor, the tolerance to metal is limited, and if it is contaminated...

AI Technical Summary

Problems solved by technology

However, metal contamination of semiconductor wafers reduces the measured value of lifetime or diffusion length, and the above-mentioned BMD or microscopic defects also reduce the measured value of lifetime or diffusion length

Therefore, the BMD or tiny defects in the semiconductor wafer and the state of the wafer surface will affect the measured value of the diffusion length measured by the surface photovoltage, which will make the measured value wrong and cause a misjudgment of whether the metal is contaminated or not.

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