Optoacoustic and surface photoroltaic dectecting method by surface electron-phonon interaction

A surface photovoltaic and surface electronic technology, applied in the direction of color/spectral characteristic measurement, material excitation analysis, etc., can solve problems such as measurement temperature limitation

Inactive Publication Date: 2005-03-02
YANSHAN UNIV
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Problems solved by technology

These detection methods have strict restrictions on the measurement temperature in the detect

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  • Optoacoustic and surface photoroltaic dectecting method by surface electron-phonon interaction
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  • Optoacoustic and surface photoroltaic dectecting method by surface electron-phonon interaction

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Embodiment Construction

[0046] Firstly, according to the photovoltaic response signal in the range of photon energy greater than the photoelectric threshold wavelength in the surface photovoltage spectrum, the nature of the band-to-band transition that generates the photovoltaic signal is analyzed. See Nanocrystalline La 0.8 Sr 0.2 FeO 3 The surface photovoltage spectrum of the sample induced by positive and negative electric fields (see Figure 4 with Figure 5 ). When the photon energy is greater than the photoelectric threshold of 2.3eV (that is, the wavelength is less than 540nm), there is a strong signal in the range of 300-400nm, and a shoulder peak response in the range of 400-450nm (see Figure 5 ). The two correspond to two different band-band transitions. When a negative electric field is added, the two photovoltaic signals are significantly enhanced (see Figure 4 ), when a positive electric field is added, the intensity of the photovoltaic signal does not change (see Figure 5 ). ...

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Abstract

The invention uses energy complementary relation of surface acoustooptic effect of conductor and semiconductor material and surface photovoltaic effect, combines results of optical acoustic spectrum and surface photovoltage spectrum, supplies a optical acoustic and photovoltaic detecting method of surface electron-phonon of conductor and semiconductor material. Using measuring method, can directly discuss; interaction of electron-phonon on surface and interface of conductor and semiconductor, and effective effective channel of radiationless de excitation course happened on surface and interface. The invention has properties of noncontiguous, nonpreprocessing, quick testing and high sensitivity, whose sensitivity can reach photovoltage spectrum multiply to the power. Atoms/cu cm which is usually higher than some standard energy spectrum or spectrum such as multiply PS or Auger electron energy spectrum several order of magnitude. The apparatus is simple and convenient, whose operation can be under room temperature and acoustooptic signal created by exciton in radiationless de excitation course can be observed, mostly important, it can supply information of electron-phonon on material surface and interface.

Description

technical field [0001] The invention utilizes the energy complementary relationship between the photoacoustic effect and the surface photovoltaic effect on the surface of conductors and semiconductor materials, and combines the results obtained from photoacoustic spectroscopy and surface photovoltage spectrum to provide a photoacoustic interaction between electrons and phonons on the surface of conductors and semiconductor materials. with surface photovoltaic probing methods. It belongs to the technical field of detection and research of charge transport properties on condensed matter surfaces. Background technique [0002] Lattice distortion around an electron causes an increase in the density of positive charges in its vicinity, and the increased charge density will propagate along the lattice with the vibration of the cation (see Figure 7 ). These distorted lattices can affect the movement of other electrons within a certain range, and these moving electrons interact wi...

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Application Information

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IPC IPC(8): G01N21/31G01N21/62
Inventor 李葵英
Owner YANSHAN UNIV
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