328results about "Bipolar transistor testing" patented technology

The invention discloses a CPLD-driven IGBT short-circuit current dynamic monitoring method and system, and relates to the technical field of power electronics, and the method comprises the specific steps of S100 real-time data acquisition, S200 dynamic threshold calculation, S300 short-circuit state judgment, S400 rapid protection execution, and S500 fault data recording and uploading. Accurate and prospective judgment of the short circuit state of the IGBT is achieved, two stress parameters including the direct-current bus voltage and the junction temperature serve as independent variables, when the bus voltage rises, the voltage stress borne by the IGBT in the turn-off period is increased, meanwhile, the current peak at the short circuit moment is more remarkable, early warning is conducted in advance by dynamically lowering the threshold value, and therefore the short circuit state of the IGBT is accurately judged. According to the mechanism, the monitoring system does not simply respond to the occurred overcurrent, but can pre-judge the safety boundary of the device under the current working condition, so that intervention is implemented before the current really reaches a dangerous peak value, and a protection blind area under a severe working condition is effectively avoided.

The present application provides a method and system for predicting the remaining service life of an IGBT device, comprising: simulating an IGBT device power cycle aging experiment, collecting conduction voltage drop historical data on the basis of the experiment, and respectively obtaining a model parameter empirical value and a model parameter estimated value on the basis of the conduction voltage drop historical data; constructing a first state weight on the basis of the current operation state, and performing smooth adjustment on the model parameter estimated value on the basis of the model parameter empirical value and the first state weight to obtain a parameter correction result; and establishing a state transition equation on the basis of the parameter correction result, and predicting the remaining service life of an IGBT device on the basis of the state transition equation. Use of the present application can improve the accuracy of prediction of the remaining service life of the IGBT device.

The invention discloses a frequency converter maintenance test system with a protection function, which belongs to the technical field of frequency converter testing and comprises a detection seat, a simulation unit for simulating actual working conditions of a frequency conversion control panel is arranged on the detection seat, and a detection mechanism for detecting a diode in the frequency conversion control panel is further arranged on the detection seat. Through dynamic cooperation of the polarization assembly and the rotary simulation disc, the vibration direction of the vibration source can be flexibly adjusted, so that a multi-dimensional vibration scene possibly encountered in actual work of the frequency conversion control panel is covered, and the problem that vibration source simulation is lacked in a traditional frequency converter testing process is solved; an elastic supporting environment of actual installation is simulated through the air bag spring suspension, vibration energy emission distortion caused by rigid fixation is avoided, the accuracy of a large-capacitance vibration fatigue test is improved, automatic step-by-step wiring operation of detection is achieved through cooperation of the detection driving assembly and the universal test meter, and the overall detection wiring efficiency is improved.

The invention provides a device consistency testing and screening method and device and electronic equipment, and the method comprises the steps: arranging IGBT modules which are connected in parallel, and enabling the IGBT modules to be internally provided with uniformly and symmetrically laminated busbars; setting the lengths of the gate pole signal wiring corresponding to each IGBT module to be consistent; selecting a target topological structure corresponding to the IGBT module, and screening a target IGBT module meeting a preset parameter index; and performing a single and double pulse test on the target IGBT module, and determining that the static current-sharing degree and the dynamic current-sharing degree corresponding to the target IGBT module are both smaller than a preset current-sharing degree threshold value. The consistency of the IGBT module can be improved through topological optimization design, multi-parameter screening and comprehensive performance testing, so that the reliability and efficiency of a converter system are improved.

Disclosed in the present invention are a resistor-based voltage-withstanding on-state voltage drop measurement circuit for junction temperature monitoring, and a monitoring method. The measurement circuit comprises: a high-resistance series high-voltage resistor RL; switching diodes D1 and D2; a low-voltage MOSFET M1; a phase inverter U1; a three-state gate U2; an RC delay circuit consisting of a resistor R1 and a capacitor C1; current-limiting resistors R2 and R3; auxiliary voltage sources VDD and VCC; an operational amplifier U3; and an isolation operational amplifier U4. The monitoring method comprises: designing an on-state voltage drop sampling circuit based on a high-resistance resistor, and performing parameter selection on the basis of an actual application scenario; measuring a collector current and on-state voltage drop model at different junction temperatures under offline conditions, so as to provide a calculation model for online monitoring; and under online conditions, performing online monitoring of junction temperature on the basis of the model obtained by means of performing testing under the offline conditions. The present invention has the advantages of being low cost, having high reliability, and adaptability to on-state voltage drop measurement at a high voltage and within a wide ambient temperature range.

The invention discloses a power device driver and a parameter correction method thereof, which are applied to the technical field of power device driving, and are characterized in that a data acquisition module acquires grid voltage and peak current of an IGBT (Insulated Gate Bipolar Translator) in the working process of the IGBT to obtain sampling data; the digital isolation chip realizes electrical isolation among the data acquisition module, the MCU and the grid voltage regulation module; the MCU calibrates the real-time junction temperature data based on the sampling data by using a preset junction temperature calibration formula and outputs calibrated junction temperature data; the gate driving chip outputs a gate voltage capable of driving the IGBT according to the control signal; the second-order short-circuit protection module sends an abnormal signal to the MCU when the IGBT is short-circuited, so that the MCU sends a grid voltage regulation trigger signal to the grid voltage regulation module; the grid voltage adjusting module responds to the grid voltage adjusting trigger signal and controls itself to reduce the grid voltage. Based on the power device driver and the parameter correction method thereof provided by the invention, the junction temperature monitoring precision and reliability are improved.

The invention relates to the technical field of modular multilevel converters, and provides an MMC fault diagnosis method, system and device based on a sorting voltage-sharing algorithm. Comprising the steps that according to measurement data of the modular multilevel converter, a theoretical value and an actual value of bridge arm voltage of the modular multilevel converter are obtained through calculation, the theoretical value and the actual value are compared with a first alarm threshold value, and a corresponding bridge arm fault and a fault type are determined; calculating the number of fault sub-modules according to the bridge arm voltage actual value and the bridge arm voltage theoretical value; judging the switching number of the fault bridge arm sub-modules, and controlling and adjusting the bridge arm sub-modules to be switched on according to the fault type and the number of the fault sub-modules; and calculating a capacitor voltage minimum difference value, comparing the capacitor voltage minimum difference value with a second alarm threshold value, and determining a fault sub-module. According to the multi-tube fault diagnosis method, the problem that the fault positioning performance is poor under the light load working condition is solved, and the sub-module positioning performance in the full power range is improved.

The present invention discloses a resistor voltage-bearing type on-state voltage drop measurement circuit for junction temperature monitoring and a monitoring method. The measurement circuit includes a high-resistance series high-voltage resistor RL, switching diodes D1 and D2, a low-voltage MOSFET M1, an inverter U1, a three-state gate U2, an RC delay circuit consisting of a resistor R1 and a capacitor C1, current-limiting resistors R2 and R3, auxiliary voltage sources VDD and VCC, an operational amplifier U3, and an isolation operational amplifier U4. and the monitoring method includes: designing an on-state voltage drop sampling circuit based on the high-resistance resistor and selecting parameters according to an actual application scenario; measuring a collector current and an on-state voltage drop model at different junction temperatures under an offline condition, and providing a calculation model for online monitoring; and performing online monitoring on the junction temperature.

The invention discloses a fault diagnosis method, device and equipment for an NPC three-level inverter and a medium, and relates to the technical field of inverter fault diagnosis, and the method comprises the steps: building a fault stator current analysis model according to a fault stator current change rule of the inverter; a fault phase and a fault bridge arm are extracted and positioned by using a sliding window averaging method; and calculating and setting a fault positioning reference value under an ideal condition, and comparing the fault positioning reference value with a fault positioning actual value under an actual condition to position a faulted IGBT (Insulated Gate Bipolar Translator). A fault stator current analysis model is established to simulate a set current change condition under an ideal condition, a fault positioning reference value is calculated, and whether an actual fault condition is consistent with a set ideal fault condition is distinguished by a deviation between the fault positioning reference value and a fault positioning actual value of an actual condition, and whether a fault is an inner pipe or an outer pipe is positioned. During calculation, a current mean value from a fault moment to a first zero-crossing moment is utilized, a fault IGBT can be positioned in a fundamental wave period, and fault diagnosis and positioning can be quickly and efficiently carried out.

The invention provides a method and a device for identifying a second-class short circuit state of an insulated gate bipolar transistor (IGBT), and relates to the technical field of IGBT devices. The invention aims to timely and accurately judge whether the insulated gate bipolar transistor is in the second-class short circuit state or not. The method comprises the following steps: acquiring an emitter structure of an insulated gate bipolar transistor in a test circuit; if the emitter structure does not have the auxiliary emitter, acquiring a chip gate voltage, a gate side line parasitic inductance, a gate parasitic inductance, an emitter side line parasitic inductance, a common emitter parasitic inductance, a gate current, a collector current and a current from a gate to a collector in a gate driving loop; on the basis of the Kirchhoff's voltage law, grid voltage is determined through the collected parameter data; and if the grid voltage is within the preset short-circuit voltage range, determining that the insulated gate bipolar transistor has a second-class short circuit.

The invention relates to the technical field of direct current converter valves, in particular to a converter valve power module fault type identification method and device. The method comprises the following steps: acquiring a first target parameter, a second target parameter, a third target parameter, a bypass switch state, an issuing state of a bypass switch conduction instruction, and an issuing state of a conduction instruction of a target IGBT device; according to a comparison result of the first target parameter and a preset first parameter threshold value, a comparison result of the second target parameter and a preset second parameter threshold value, a bypass switch state and an issuing state of a bypass switch conduction instruction; according to a comparison result of the third target parameter and a preset third parameter threshold value, an issuing state of a conduction instruction of the target IGBT device, a comparison result of the third target parameter and a preset fourth parameter threshold value, and an issuing state of the conduction instruction of the target IGBT device, a fault type is identified; the existing fault identification method has the technical problems of long time consumption and low efficiency.

The invention relates to an electric leakage test method for an intelligent power module, which comprises the following steps: S1, providing the intelligent power module which comprises a control chip, an inverter unit and a pin assembly, and the inverter unit comprises an upper bridge arm circuit connected with a U / V / W phase output end and the control chip and a lower bridge arm circuit connected with an NU / NV / NW phase output end and the control chip; s2, the U-phase output end is in short circuit with bootstrap voltage VBU, the V-phase output end is in short circuit with bootstrap voltage VBV, and the W-phase output end is in short circuit with bootstrap voltage VBW; s4, starting a 15V low-voltage power supply and a 5V low-voltage power supply; s5, starting a high-voltage power supply DC to apply 600V voltage to the NU / NV / NW phase output end from the U / V / W phase output end; s6, after the electric leakage values of the U-phase output end, the V-phase output end, the W-phase output end, the NU-phase output end, the NV-phase output end and the NW-phase output end are read through the monitoring equipment, electric leakage testing is completed; and S7, sequentially disconnecting the relay and the power supply. According to the method provided by the invention, the product test yield is improved, and the product reliability and the test safety are ensured.

The invention relates to a test and quality control method in a process for manufacturing semiconductor devices (Hx), such as GaN, IGBT, SiC-MOSFET, etc., comprising a measurement step in which the magnitude of a forward resistance (Rx) of the respective semiconductor device (Hx) or a correlated test parameter is measured. According to the invention, the test and quality control method includes an evaluation step in which a deviation (ΔR) of the test parameter (Rx) from its nominal value (RN) is determined. In the evaluation step, a categorization (K2) takes place in which, based on the magnitude of the deviation (ΔR), the respective semiconductor device (Hx) is assigned to a category or bin (B1, B2, B3), which determines the further use of the semiconductor device (Hx).

The invention discloses an IGBT life prediction method based on adaptive unscented particle filtering of time sequence form perception optimization, and belongs to the technical field of health prediction and reliability engineering. The method aims at the problems that a traditional filtering algorithm is prone to falling into local optimum in a high-dimensional parameter space and prediction trajectory forms are discontinuous, and comprises the steps that firstly, an IGBT nonlinear degradation model is established through a state-space equation; performing Sigma point sampling and nonlinear propagation at a particle level by adopting an unscented transformation and particle filtering cooperation mechanism, and fusing process noise to realize dynamic state prediction; constructing a Gaussian likelihood function by using the deviation between a predicted value and an actual observed value to generate a system residual sequence; an FCD fusion index is innovatively introduced, the index fuses a Pearson correlation coefficient and a Frechet distance to synchronously quantify trend consistency and form similarity, and self-adaptive genetic optimization is driven accordingly; and repeating the behaviors before a preset termination condition is met, and continuously updating the parameters of the state-space equation.

A half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

The invention discloses IGBT test equipment which comprises a rotary feeding table, a terminal connecting module, a cooling box, a feeding station and a test station, the terminal connecting module is adjacent to the test station, two jigs which are symmetrically arranged relative to the circle center of the rotary feeding table are arranged on the rotary feeding table, and the jigs are used for loading IGBT devices. The rotary feeding table is used for driving a jig loaded with the IGBT device at the feeding station to rotate to the testing station and enabling a terminal of the IGBT device to be aligned with a terminal of the terminal connecting module, a pressing mechanism is arranged at the position adjacent to the terminal connecting module and used for pressing the terminal of the IGBT device and the terminal of the terminal connecting module, a water cooling mechanism is arranged in the cooling box, and the water cooling mechanism is used for cooling the IGBT device and the terminal of the terminal connecting module. And the water cooling mechanism is arranged adjacent to the test station and is used for carrying out water cooling on the IGBT device loaded on the jig. According to the invention, loading and unloading operation can be carried out on the IGBT device while testing is carried out, the IGBT device can be reliably clamped and fixed, and the cooling efficiency can be improved.

The invention relates to an evaluation system. A method includes evaluating a first parameter, a second parameter, and a third parameter of a power switch. The first evaluation mode includes receiving a first sense current from the power switch at the common sense terminal; and measuring a first parameter during a switching event of the power switch based on the first sensed current. The second evaluation mode includes outputting a second sense current from the common sense terminal to the power switch; and measuring a second parameter dependent on a current flow of the second sense current through the power switch, the current flow dependent on an electrode voltage present at the drain or collector of the power switch. The third evaluation mode includes generating a third sense current at the common sense terminal; and measuring a third parameter generated based on the third sensed current and a temperature of the power switch.

The invention discloses a grid-connected inverter IGBT (Insulated Gate Bipolar Translator) fault diagnosis method and a grid-connected inverter IGBT fault diagnosis system based on a combined observer, and aims to improve the fault diagnosis robustness and accuracy of a switching device by an inverter system. Inverter inductive current, filter capacitor voltage, power grid inductive current and total disturbance including IGBT fault effect are considered; then, designing and operating a superhelix total disturbance observer, and estimating and separating the total disturbance of the system in real time; disturbance compensation is carried out through an estimation result of the interval sliding mode observer, and interval estimation of a system state and system output is generated; and finally, realizing IGBT fault diagnosis by combining two criteria of disturbance estimation deviation and state interval consistency. According to the method, the problems that a traditional method is poor in disturbance resistance and prone to false alarm and missing alarm are effectively solved, the stability, accuracy and reliability of a diagnosis system are enhanced, and the method is suitable for photovoltaic grid-connected inverter IGBT fault detection and diagnosis under the complex operation condition.

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

The invention discloses an IGBT over-temperature protection control method and device based on a state machine, and relates to the technical field of temperature control of power electronic equipment, and the method comprises the steps: dividing an IGBT into a plurality of states; monitoring the temperature of the IGBT; and according to the temperature of the IGBT, switching between different states is automatically carried out, and a corresponding power adjustment strategy is executed. According to the invention, the temperature of the IGBT can be monitored in real time, and the power output is automatically adjusted according to the temperature change, so that the stable operation and long-term reliability of equipment are ensured. The system has real-time performance, self-adaptability, reliability, flexibility and maintenance simplicity and convenience, the fault-tolerant capability of the system is enhanced by introducing a plurality of intermediate states, it is ensured that measures are taken in time when the temperature is abnormal, and work is smoothly recovered after the temperature is recovered to be normal.

The disclosure relates to an electronic circuit arrangement comprising at least one voltage-controlled power transistor (VCPT, MOSFET, IGBT), the electronic circuit arrangement comprising a degradation measurement module (DMM) for monitoring the degradation of the at least one voltage-controlled power transistor (VCPT), the degradation measurement module comprising a current injection module (CIM) which is connected to the emitter of the at least one voltage-controlled power transistor (VCPT), and a degradation measurement module (DMM), the degradation measurement module being able to measure a first voltage (Veg) following a current injection (Iinj) at the emitter of the at least one voltage-controlled power transistor (VCPT), the current injection module (CIM) and the degradation measurement module (DMM) being connected to the same ground.

The invention relates to the technical field of IGBT drive circuit fault detection, in particular to a three-terminal device drive circuit fault detection method and system for electronic engineering, and the method comprises the steps: obtaining the gate turn-on voltage of a to-be-detected IGBT, and collecting the collector-emitter voltage and gate voltage in the operation process of the to-be-detected IGBT drive circuit, and the temperature data of the to-be-detected IGBT in real time; determining the anomaly degree, the change index and the anomaly factor of the collector-emitter voltage; obtaining each break-over voltage, analyzing the difference between each break-over voltage and the gate turn-on voltage and the number of the break-over voltages, and determining the gate voltage abnormality of the to-be-detected IGBT drive circuit in combination with the drop condition of the gate voltage; obtaining an abnormal value of the to-be-detected IGBT drive circuit; and detecting the fault condition of the to-be-detected driving circuit. The invention aims to improve the accuracy of fault detection of the IGBT drive circuit.

The invention discloses a fault diagnosis method and system for an active device of an active magnetic suspension bearing power amplifier, and belongs to the technical field of magnetic suspension bearings, and the method comprises the steps: controlling each winding to be in an upward follow current state and a downward follow current state at the initial moment and the end moment of a switching period under a normal working condition; respectively acquiring direct-current bus current ibus1 and ibus2 at a starting moment and an ending moment, and winding current at an intermediate moment, and predicting winding current of a next switching period according to the winding current; if ibus1 is equal to 0 and ibus2 is equal to 0 and the error between the winding current predicted value and the measured value in the next switching period is large, the corresponding winding is controlled to be in a charging state at the initial moment of the next switching period, the direct current bus current and the winding current are compared, and if the error between the direct current bus current and the winding current is large, it is judged that a corresponding phase current sensor breaks down; and if ibus1 = 0 and ibus2 = 0 are not satisfied, judging that a transistor fault occurs. According to the invention, effective and rapid diagnosis of the active device in the magnetic suspension bearing power amplifier can be realized.

The embodiment of the invention provides a crimping type IGBT junction temperature measurement method and device based on a complex parameter atlas. The method comprises the steps that temperature-sensitive electrical parameters generated in the current operation process of a crimping type IGBT device are collected; according to the current operation condition, a corresponding map is determined from a plurality of pre-trained complex parameter action maps, and the complex parameter action maps are obtained by sampling current and voltage signals under multiple working conditions at a high speed, extracting dynamic temperature-sensitive electrical parameters, modeling by utilizing multiple regression or machine learning, and obtaining the dynamic temperature-sensitive electrical parameters. The mapping function is converted based on a fitting algorithm; inputting the temperature-sensitive electrical parameters into the complex parameter action atlas based on an interpolation method so as to obtain a junction temperature calculation result of the current crimping type IGBT; according to the method, the map of the influence of the complex parameters on the temperature-sensitive electrical parameters can be generated through multi-dimensional fitting, and accurate prediction of the junction temperature under different working conditions is realized.

The invention discloses an IGBT probe card, comprising a PCB main board, wherein a gas hood set is arranged in the middle of the PCB main board, wherein the gas hood set comprises a gas hood upper frame fixedly mounted on the PCB main board by means of flat-bottom round-head cross screws, a gas hood bottom ring fixedly mounted on the lower surface of the PCB main board, and a gas hood upper cover arranged on the upper side of the gas hood upper frame, wherein a locking metal block is fixedly connected to the middle of the PCB main board by means of a test head column hexagon socket screw, wherein the gas hood upper cover is fixedly mounted on the locking metal block by means of an upper cover column hexagon socket screw, and a probe test head is arranged on the lower side of the locking metal block; the invention adopts a designed gas hood set, a quick-connect gas valve and an air curtain spray hole, wherein a continuous air curtain is formed in the gas hood area and around a chip by means of the quick-connect gas valve when in use, so as to suppress an arc generated by ultra-high voltage and large current breaking through the air, thereby ensuring that a chip to be tested can be tested normally and is not burned, and wherein the gas hood set can be quickly assembled, disassembled and replaced when in use.

A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement terminal and a second measurement point electrically connected to the emitter electrode, so that a voltage which drops over the temperature sensor is measurable between the measurement terminal and the first emitter terminal for the temperature measurement. Corresponding methods for determining a temperature of a power semiconductor element and for determining a sign of a load current in a bridge circuit are also described.

This invention relates to the field of power electronics technology, specifically to an online detection device and method for IGBT collector current based on gate current. The detection method includes: a drive Miller plateau detection module processing the IGBT gate drive waveform to extract the Miller plateau region; an IGBT drive current integration module extracting the voltage across the IGBT gate drive resistor, integrating the voltage waveform during the Miller plateau period, and using the integration result to characterize the gate current during the Miller plateau period; measuring the integrator output voltage and collector current under three different load currents, and performing second-order polynomial fitting within a DSP to fit a function of the collector current with respect to the integrator output voltage. This fitting result allows for online measurement of the collector current via the gate current. This method avoids the use of high-voltage, high-power devices, is easy to integrate, has low detection costs, and is easy to implement.

The invention discloses an IGBT aging monitoring method and apparatus, and an electronic device. The method comprises the steps of obtaining a pre-established first junction temperature expression, a first shell temperature expression and a model parameter conversion model of a to-be-monitored IGBT; the actually measured junction temperature and the actually measured shell temperature of the IGBT to be monitored and initial values of model parameters of the four-order Cauer thermal network model are obtained; fitting the first junction temperature expression in combination with the actually measured junction temperature to obtain a junction temperature initial value coefficient and a time constant; inputting different values of the junction temperature initial value coefficient, the time constant and the model parameter into a model parameter conversion model to obtain a shell temperature initial value coefficient corresponding to each value; inputting each value of the model parameter and the initial value coefficient of the shell temperature into a first shell temperature expression to obtain the shell temperature corresponding to each value; and evaluating the aging state of the to-be-monitored IGBT according to the model parameter corresponding to the shell temperature closest to the actually measured shell temperature. According to the invention, the aging state can be accurately evaluated in real time in different states.

The invention provides an IGBT device internal current sensing method and device based on Z-axis magnetic field measurement, and relates to the technical field of electrical engineering.The method comprises the steps that a short coil array is arranged on the surface of a to-be-measured crimping type IGBT device, and the short coil array comprises a plurality of short coils arranged in an array in the Z-axis direction; connecting the two ends of each short coil with an integrator circuit; measuring the induced electromotive force generated by the two ends of each short coil in the Z-axis direction; the measured induced electromotive force generated at the two ends of each short coil is converted into current distribution change near the short coil through an integrator circuit connected with the two ends of each short coil; and analyzing the current distribution state of the chip in the device based on the current distribution change near the short coil. The current distribution in the device can be accurately measured and sensed, whether an overheated chip area exists in the device or not can be accurately judged, intervention is carried out in time, safety early warning is achieved, and the service life of the device is prolonged.

The present invention discloses a test system for inverter maintenance with a protective function, belonging to the field of inverter testing technology. The system includes a detection base, a simulation unit for simulating the actual working conditions of a frequency conversion control board, and a detection mechanism for detecting the internal diode of the frequency conversion control board. The present invention can flexibly adjust the vibration direction of the vibration source through the dynamic coordination of a polarization component and a rotating simulation disk, thereby covering the multi-dimensional vibration scenarios that may be encountered in the actual operation of the frequency conversion control board, solving the problem of lack of vibration source simulation in the traditional frequency conversion test process, and simulating the elastic support environment of the actual installation through an airbag spring suspension, avoiding the distortion of vibration energy emission caused by rigid fixation, thereby improving the accuracy of large-capacitor vibration fatigue testing, and realizing automatic step-by-step wiring operation of the detection by cooperating with a multimeter through the detection drive component, thereby improving the overall detection wiring efficiency.