152results about "Bipolar transistor testing" patented technology

The invention discloses a CPLD-driven IGBT short-circuit current dynamic monitoring method and system, and relates to the technical field of power electronics, and the method comprises the specific steps of S100 real-time data acquisition, S200 dynamic threshold calculation, S300 short-circuit state judgment, S400 rapid protection execution, and S500 fault data recording and uploading. Accurate and prospective judgment of the short circuit state of the IGBT is achieved, two stress parameters including the direct-current bus voltage and the junction temperature serve as independent variables, when the bus voltage rises, the voltage stress borne by the IGBT in the turn-off period is increased, meanwhile, the current peak at the short circuit moment is more remarkable, early warning is conducted in advance by dynamically lowering the threshold value, and therefore the short circuit state of the IGBT is accurately judged. According to the mechanism, the monitoring system does not simply respond to the occurred overcurrent, but can pre-judge the safety boundary of the device under the current working condition, so that intervention is implemented before the current really reaches a dangerous peak value, and a protection blind area under a severe working condition is effectively avoided.

The present application provides a method and system for predicting the remaining service life of an IGBT device, comprising: simulating an IGBT device power cycle aging experiment, collecting conduction voltage drop historical data on the basis of the experiment, and respectively obtaining a model parameter empirical value and a model parameter estimated value on the basis of the conduction voltage drop historical data; constructing a first state weight on the basis of the current operation state, and performing smooth adjustment on the model parameter estimated value on the basis of the model parameter empirical value and the first state weight to obtain a parameter correction result; and establishing a state transition equation on the basis of the parameter correction result, and predicting the remaining service life of an IGBT device on the basis of the state transition equation. Use of the present application can improve the accuracy of prediction of the remaining service life of the IGBT device.

The invention discloses a fault diagnosis method, device and equipment for an NPC three-level inverter and a medium, and relates to the technical field of inverter fault diagnosis, and the method comprises the steps: building a fault stator current analysis model according to a fault stator current change rule of the inverter; a fault phase and a fault bridge arm are extracted and positioned by using a sliding window averaging method; and calculating and setting a fault positioning reference value under an ideal condition, and comparing the fault positioning reference value with a fault positioning actual value under an actual condition to position a faulted IGBT (Insulated Gate Bipolar Translator). A fault stator current analysis model is established to simulate a set current change condition under an ideal condition, a fault positioning reference value is calculated, and whether an actual fault condition is consistent with a set ideal fault condition is distinguished by a deviation between the fault positioning reference value and a fault positioning actual value of an actual condition, and whether a fault is an inner pipe or an outer pipe is positioned. During calculation, a current mean value from a fault moment to a first zero-crossing moment is utilized, a fault IGBT can be positioned in a fundamental wave period, and fault diagnosis and positioning can be quickly and efficiently carried out.

The invention discloses an IGBT life prediction method based on adaptive unscented particle filtering of time sequence form perception optimization, and belongs to the technical field of health prediction and reliability engineering. The method aims at the problems that a traditional filtering algorithm is prone to falling into local optimum in a high-dimensional parameter space and prediction trajectory forms are discontinuous, and comprises the steps that firstly, an IGBT nonlinear degradation model is established through a state-space equation; performing Sigma point sampling and nonlinear propagation at a particle level by adopting an unscented transformation and particle filtering cooperation mechanism, and fusing process noise to realize dynamic state prediction; constructing a Gaussian likelihood function by using the deviation between a predicted value and an actual observed value to generate a system residual sequence; an FCD fusion index is innovatively introduced, the index fuses a Pearson correlation coefficient and a Frechet distance to synchronously quantify trend consistency and form similarity, and self-adaptive genetic optimization is driven accordingly; and repeating the behaviors before a preset termination condition is met, and continuously updating the parameters of the state-space equation.

A half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

The invention relates to an evaluation system. A method includes evaluating a first parameter, a second parameter, and a third parameter of a power switch. The first evaluation mode includes receiving a first sense current from the power switch at the common sense terminal; and measuring a first parameter during a switching event of the power switch based on the first sensed current. The second evaluation mode includes outputting a second sense current from the common sense terminal to the power switch; and measuring a second parameter dependent on a current flow of the second sense current through the power switch, the current flow dependent on an electrode voltage present at the drain or collector of the power switch. The third evaluation mode includes generating a third sense current at the common sense terminal; and measuring a third parameter generated based on the third sensed current and a temperature of the power switch.

The invention discloses a grid-connected inverter IGBT (Insulated Gate Bipolar Translator) fault diagnosis method and a grid-connected inverter IGBT fault diagnosis system based on a combined observer, and aims to improve the fault diagnosis robustness and accuracy of a switching device by an inverter system. Inverter inductive current, filter capacitor voltage, power grid inductive current and total disturbance including IGBT fault effect are considered; then, designing and operating a superhelix total disturbance observer, and estimating and separating the total disturbance of the system in real time; disturbance compensation is carried out through an estimation result of the interval sliding mode observer, and interval estimation of a system state and system output is generated; and finally, realizing IGBT fault diagnosis by combining two criteria of disturbance estimation deviation and state interval consistency. According to the method, the problems that a traditional method is poor in disturbance resistance and prone to false alarm and missing alarm are effectively solved, the stability, accuracy and reliability of a diagnosis system are enhanced, and the method is suitable for photovoltaic grid-connected inverter IGBT fault detection and diagnosis under the complex operation condition.

A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement terminal and a second measurement point electrically connected to the emitter electrode, so that a voltage which drops over the temperature sensor is measurable between the measurement terminal and the first emitter terminal for the temperature measurement. Corresponding methods for determining a temperature of a power semiconductor element and for determining a sign of a load current in a bridge circuit are also described.

This invention relates to the field of power electronics technology, specifically to an online detection device and method for IGBT collector current based on gate current. The detection method includes: a drive Miller plateau detection module processing the IGBT gate drive waveform to extract the Miller plateau region; an IGBT drive current integration module extracting the voltage across the IGBT gate drive resistor, integrating the voltage waveform during the Miller plateau period, and using the integration result to characterize the gate current during the Miller plateau period; measuring the integrator output voltage and collector current under three different load currents, and performing second-order polynomial fitting within a DSP to fit a function of the collector current with respect to the integrator output voltage. This fitting result allows for online measurement of the collector current via the gate current. This method avoids the use of high-voltage, high-power devices, is easy to integrate, has low detection costs, and is easy to implement.

The invention discloses an IGBT aging monitoring method and apparatus, and an electronic device. The method comprises the steps of obtaining a pre-established first junction temperature expression, a first shell temperature expression and a model parameter conversion model of a to-be-monitored IGBT; the actually measured junction temperature and the actually measured shell temperature of the IGBT to be monitored and initial values of model parameters of the four-order Cauer thermal network model are obtained; fitting the first junction temperature expression in combination with the actually measured junction temperature to obtain a junction temperature initial value coefficient and a time constant; inputting different values of the junction temperature initial value coefficient, the time constant and the model parameter into a model parameter conversion model to obtain a shell temperature initial value coefficient corresponding to each value; inputting each value of the model parameter and the initial value coefficient of the shell temperature into a first shell temperature expression to obtain the shell temperature corresponding to each value; and evaluating the aging state of the to-be-monitored IGBT according to the model parameter corresponding to the shell temperature closest to the actually measured shell temperature. According to the invention, the aging state can be accurately evaluated in real time in different states.

The invention discloses a monitoring circuit and method for the switching state of a power switching device and a motor controller thereof, and relates to the technical field of power switching devices, and the monitoring circuit comprises a driving chip which is used for driving the switching-on and switching-off of the power switching device; the state detection module is connected between the collector electrode or the drain electrode of the power switch device and the ground, and is used for sampling the conduction voltage drop of the power switch device and generating a state detection signal; the input end of the signal isolation and transmission module is connected with the output end of the state detection module, and the signal isolation and transmission module is used for isolating the state detection signal and transmitting the signal to a low-voltage side; and the low-voltage side is configured to judge the turn-on or turn-off state of the power switch device according to the signal output by the signal isolation and transmission module. The on-off state of the power switch device is monitored; dependence on a specific diagnosis function integrated in the driving chip is abandoned, so that the driving chip can be matched with any universal driving chip for use, the system cost is reduced, and the flexibility and universality of circuit design are enhanced.

The application relates to an MMC sub-module IGBT open-circuit fault diagnosis method based on an improved density clustering algorithm and belongs to the field of power electronic devices. The method comprises the following steps: extracting the capacitor voltage of each sub-module in a modular multilevel converter, and obtaining the capacitor voltage spectrum after discrete processing and Fourier transformation; extracting a feature vector containing a frequency mean value, a root mean square frequency, a standard deviation frequency and a center frequency according to the capacitor voltage spectrum; adopting an improved density clustering algorithm based on a GOOSE optimization algorithm to classify faults for the feature vector corresponding to each sub-module; determining the sub-module corresponding to the output result of the improved density clustering algorithm existing a noise point as an open-circuit fault, and judging the fault category according to the device position in the sub-module. The improved DBSCAN algorithm based on the GOOSE optimization algorithm is used to judge the fault sub-module, can diagnose multiple fault points, has high diagnosis precision and strong real-time performance.

A method for in situ threshold voltage determination of a semiconductor device includes sourcing a current to a first terminal of the semiconductor device. A gate terminal of the semiconductor device is driven with a plurality of gate levels. Each gate level includes one of a plurality of different gate voltages. A transistor voltage is measured between the first terminal and a second terminal of the semiconductor device during each gate level. The respective gate voltage is stored in response to the semiconductor device voltage transitioning past a voltage limit. A temperature dependent threshold voltage of the semiconductor device is estimated for a first measured temperature measured during the storing of the stored gate voltage from a previously stored gate voltage and a second measure temperature.

This invention discloses an automatic leakage current reliability detection circuit and method for IGBT devices. The circuit includes: a PWM control unit; and an interlock detection unit composed of an HTGB test circuit and an HTRB test circuit. The PWM control unit is connected to the interlock detection unit and is used to control the HTGB and HTRB test circuits in the interlock detection unit to automatically perform interlock tests. The interlock detection unit is used to perform HTGB and HTRB interlock tests on the IGBT device to obtain the gate-emitter leakage current or collector-emitter leakage current of the IGBT device. The automatic leakage current reliability detection circuit and method for IGBT devices provided by this invention not only achieves automatic detection of HTGB and HTRB tests, but also protects the device under test when the leakage current is too high, reduces equipment redundancy, simplifies the testing process, and lowers costs.

A semiconductor device, including: a power semiconductor element having a current output electrode; a wire bonded to the current output electrode; and a degradation detection circuit configured to monitor a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to satisfaction of a plurality of conditions including that the power semiconductor element is in a turn-off state, and that a temperature of the power semiconductor element is within a predetermined temperature range.

Power semiconductor-device test apparatuses carrying out gate-signal controlled on / off switching of high-amp test current for various forms of device lifespan testing. Fork plugs or like connectors are insertable through openings of choice in walls partitioning the test apparatus interior for connection, in lieu of altering of wire-line changes, to switch circuits of choice, facilitating test-type connection changing. Sample-connection circuits, removable by means of connectors, include gate-driver, variable-resistor, constant-current, and voltage-output circuits, and via the gate driver circuits generate gate signals, adjustable via the variable-resistor circuits, shorting-circuit on / off applied to the gate terminals of devices under test. The constant-current circuit feeds a diode across the non-gate terminals of a device under test. A control circuit varies current, gate, and output voltages to set the test conditions so that device-under-test temperature will be a predetermined value.

The invention discloses an open-circuit fault diagnosis method and equipment applied to an inverter power supply of a hybrid power device. The method comprises the following steps: acquiring an output voltage or an output current in a current state; obtaining a current state, and obtaining each harmonic amplitude and a total harmonic distortion rate of a normal state; obtaining each harmonic amplitude offset and the total harmonic distortion rate offset of the current state; respectively comparing each subharmonic amplitude offset and the total harmonic distortion rate offset of the current state with the judgment threshold of the corresponding subharmonic amplitude offset and the judgment threshold of the total harmonic distortion rate offset; and determining that the open-circuit fault exists in the current state if the same specific subharmonic amplitude offset of the current state is greater than the judgment threshold of the corresponding subharmonic amplitude offset, or the total harmonic distortion rate offset of the current state is greater than the judgment threshold of the total harmonic distortion rate offset. According to the invention, the open-circuit fault of the inverter power supply of the hybrid power device can be diagnosed.

A power device system comprising: a power device and a controller, the power device comprising: a power switch; and a control terminal driver, and wherein the power device is configured to operate in both a ramp-up and ramp-down diagnostic mode in which the control terminal driver is respectively configured to: apply a test current at the first node of the conduction channel of the power switch; apply a first driver voltage that is less than or greater than the threshold voltage at control terminal of the power switch; increase or decrease, respectively, the first driver voltage until a voltage drop or voltage increase, respectively is detected; and measure the first driver voltage at which the voltage drop is detected as a ramp-up threshold voltage or ramp-down threshold voltage, respectively, wherein the controller is configured to determine a state of health of the power switch based on the ramp-up threshold voltage and the ramp-down threshold voltage.

According to one embodiment, an inspection apparatus includes a controller configured to be electrically connected to a semiconductor device. The semiconductor device includes a semiconductor member, a transistor section, and a diode section. The transistor section and the diode section are provided in the semiconductor member. The transistor section includes a source electrode, a drain electrode, and a gate electrode. The diode section includes a first end and a second end. The first end is electrically connected to the source electrode. The second end is electrically connected to the drain electrode. The controller is configured to perform a first operation, a first progress operation, a second operation, and a first determination operation. The first progress operation is performed after the first operation. The second operation is performed after the first progress operation.

The invention relates to a method for testing a transistor. A method may include closing a reset switch electrically coupled to a gate of a transistor such that the gate is at a first voltage to charge the gate, where the transistor includes the gate and a source, and the source is electrically coupled to a first voltage source; placing the gate of the transistor in a high impedance state; turning off the reset switch; closing a comparator switch such that the gate is electrically coupled to a first input terminal of a voltage comparator wherein a second input terminal of the voltage comparator is adapted to receive a detection voltage; and determining whether the transistor has a defect based on an output from the voltage comparator. In one implementation, a defect is detected if excess charge is released from the gate during a detection period after the reset switch is turned off.

The invention provides a driving method and device for a short-circuit test of a power semiconductor device, and belongs to the technical field of semiconductor testing. The driving circuit is electrically connected with the secondary side of the isolated power supply circuit and is configured to trigger the device to be tested to execute a short-circuit test based on an external control signal; the isolated power supply circuit is configured to enter a stop working state during a short circuit test based on the external control signal; and providing a working power supply for the driving circuit during the short-circuit test by using the energy stored by the isolation power supply circuit before entering the working stop state. According to the technical scheme, the low-voltage side device in the driving device can be prevented from being damaged due to exposure to high-voltage and large-current conditions in the short-circuit testing process of the to-be-tested device.

1. A method for measuring a flatband voltage during operation of a power semiconductor module, the method comprising: a. applying a bias voltage to the module such that the module switches between an off state and an on state; b. triggering injection of a gate current from a current source to a gate of the module when an initial gate-emitter / source voltage equals the flatband voltage of the module; c. measuring a voltage across the current source; d. extracting a flatband voltage from the measured voltage across the current source; e. stopping injection of the gate current when a difference between the gate-emitter / source voltage and the flatband voltage becomes greater than a predetermined limit value or when a duration of injection of the gate current exceeds a predetermined duration; and f. storing a value of the extracted flatband voltage V.

This invention proposes a method and system for diagnosing open-circuit faults in three-phase inverter IGBTs, relating to the technical field of power electronic device fault diagnosis. The method involves lightweight processing of acquired historical data to obtain feature vectors; training a pre-defined three-phase inverter IGBT open-circuit fault diagnosis model based on these feature vectors; real-time acquisition of three-phase current data to be processed, followed by bounded normalization to obtain normalized current amplitudes; and generating IGBT open-circuit fault judgment results based on these normalized current amplitudes. Real-time data related to the three-phase inverter IGBT open-circuit fault is collected based on the IGBT open-circuit fault judgment results, and this real-time data is input into the trained three-phase inverter IGBT open-circuit fault diagnosis model to output the three-phase inverter IGBT open-circuit fault diagnosis results. This invention effectively achieves lightweight, efficient, and accurate diagnosis of three-phase inverter IGBT open-circuit faults.

The invention provides an IGBT device current distribution sensing method and device based on a short coil array, and relates to the technical field of electrical engineering. The method comprises the following steps that short coil arrays in the X-axis direction and the Y-axis direction are arranged on the surface of a to-be-tested crimping type IGBT device, and the short coil arrays comprise short coils arranged at preset intervals; connecting the two ends of each short coil with an integrator circuit; measuring induced electromotive force generated at two ends of each short coil; the measured induced electromotive force is converted into current distribution change near the short coils through integrator circuits connected with the two ends of each short coil, and the current distribution state of a chip in the to-be-measured crimping type IGBT device is analyzed. According to the method, the sensitivity of measuring the internal current distribution of the IGBT device is improved, the more accurate and detailed internal current distribution condition of the device is obtained, monitoring errors are reduced, safety early warning can be carried out in time, effective intervention measures can be taken, and the aging state of the device can be evaluated.

The invention discloses an IGBT detection method and system and a vehicle, relates to the technical field of IGBTs, and is applied to the IGBT detection system comprising an IGBT driving module, a current source module and a temperature sensor, the current source module is connected with the IGBT driving module, the temperature sensor collects a radiator temperature value of a radiator corresponding to the system, and the temperature value of the radiator is calculated. An IGBT detection instruction is received to control the IGBT driving module and the current source module, so that the system is in a first current working state, and the current value at the moment is greater than a preset current value; under the condition that the duration of the first current working state is equal to a preset duration threshold value, the IGBT driving module and the current source module are controlled to enable the system to be in a second current working state, and the current value at the moment is smaller than or equal to a preset current value; and obtaining the conduction voltage drop of the IGBT at the moment, and detecting the IGBT according to the conduction voltage drop of the IGBT and the temperature value of the radiator. According to the invention, the detection accuracy of the IGBT is improved.

A universal aging test IGBT device disclosed by the present invention comprises a test box, a temperature control box and a signal box, the temperature control box is fixedly connected with the test box, the test box comprises a first box body and a test assembly arranged in the first box body, and the test assembly comprises a test board and a plurality of temperature control units fixed on the test board. Each temperature control unit comprises a liquid cooling seat, each liquid cooling seat is provided with a mounting plate, a liquid inlet, a liquid outlet and a mounting groove for mounting an IGBT to be tested, the liquid inlets are communicated with the liquid outlets through the mounting grooves, the mounting plates are fixed at the bottoms of the mounting grooves, and each mounting plate is provided with a plurality of mounting holes and a plurality of grooves; the temperature control box comprises a second box body and a plurality of liquid circulation assemblies arranged in the second box body, each liquid circulation assembly comprises an inner frame, a temperature-resistant pipe, a liquid inlet pipe and a liquid outlet pipe, the temperature-resistant pipes, the liquid inlet pipes and the liquid outlet pipes are arranged on the inner frames, the liquid inlet pipes are communicated with the liquid inlet through the temperature-resistant pipes, and the liquid outlet pipes are communicated with the liquid outlet through the temperature-resistant pipes. The IGBT aging test device can perform aging test on IGBTs of various models, and is good in universality.

A system is provided. The system includes a semi-conductor device and a gate drive board. The gate drive board (210) provides a voltage to the semi-conductor device. The system also includes a controller (205) and a monitoring circuit. The controller (205) drives the voltage provided by the gate drive board 210). The monitoring circuit (230) is coupled to the gate drive board to monitor operations of the controller and the semi-conductor device.

The application relates to a loss determination method, device, equipment, storage medium and program product. The method comprises the following steps: obtaining a preset number of target bridge arm current values in a sampling period of a bridge arm current of a flexible DC converter valve; obtaining the loss of each component in the flexible DC converter valve according to the target bridge arm current values; obtaining the loss of a half-bridge sub-module in the flexible DC converter valve according to the loss of each component; and determining the target loss of the flexible DC converter valve according to the loss of the half-bridge sub-module. The loss determination method adopts a limited sampling mode to obtain the bridge arm current, so that the accuracy of the determined loss of the flexible DC converter valve is relatively high.

The application discloses a series full-bridge sub-module component state evaluation method and system, the method comprises the following steps: constructing a series full-bridge sub-module group, sequentially evaluating the state of each full-bridge sub-module, obtaining the on-state voltage drop of IGBT and diode based on the state mode of the full-bridge sub-module to be measured and the capacitor voltage value of the valve control system, and evaluating the on-flow state of IGBT and diode; based on the on-state voltage drop of IGBT and diode and the state equation of different discharge processes in the full-bridge sub-module to be measured, the capacitor voltage value and the voltage resistance value of the valve control system are combined to calculate the capacitor capacity and the voltage resistance resistance, the state of the capacitor and the voltage resistance is evaluated, and the state evaluation of the component is completed. The application can effectively improve the fault detection efficiency and accuracy of the series full-bridge sub-module, and guarantee the stable operation of the power electronic equipment.

This invention discloses a high-frequency current detection and control system and method based on a single-tube coil design. Two sets of qualified 200mm circumference flexible current probes (A and B) are used to test the IGBT current and coil current respectively. After connecting the BNC output interface to an oscilloscope, the flexible current probes greatly facilitate the selection of IGBTs and the design and quantitative evaluation of the coil cross-sectional area in single-tube induction cookers. This allows for isolated detection of high-frequency coil current in existing induction cookers, including single-burner and multi-burner models. A precise high-frequency current is generated through a sampling resistor and connected to the AD interface circuit of a DSP. Through the DSP's communication circuit, it can simultaneously communicate with the touch display panel of the existing induction cooker or a computer via an isolated serial port. The touch display panel then communicates with each induction cooker control board via an isolated serial port, achieving closed-loop control functions for cookware identification and cookware compatibility.