82results about "Bipolar transistor testing" patented technology

The invention discloses a CPLD-driven IGBT short-circuit current dynamic monitoring method and system, and relates to the technical field of power electronics, and the method comprises the specific steps of S100 real-time data acquisition, S200 dynamic threshold calculation, S300 short-circuit state judgment, S400 rapid protection execution, and S500 fault data recording and uploading. Accurate and prospective judgment of the short circuit state of the IGBT is achieved, two stress parameters including the direct-current bus voltage and the junction temperature serve as independent variables, when the bus voltage rises, the voltage stress borne by the IGBT in the turn-off period is increased, meanwhile, the current peak at the short circuit moment is more remarkable, early warning is conducted in advance by dynamically lowering the threshold value, and therefore the short circuit state of the IGBT is accurately judged. According to the mechanism, the monitoring system does not simply respond to the occurred overcurrent, but can pre-judge the safety boundary of the device under the current working condition, so that intervention is implemented before the current really reaches a dangerous peak value, and a protection blind area under a severe working condition is effectively avoided.

A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement terminal and a second measurement point electrically connected to the emitter electrode, so that a voltage which drops over the temperature sensor is measurable between the measurement terminal and the first emitter terminal for the temperature measurement. Corresponding methods for determining a temperature of a power semiconductor element and for determining a sign of a load current in a bridge circuit are also described.

The invention discloses an IGBT aging monitoring method and apparatus, and an electronic device. The method comprises the steps of obtaining a pre-established first junction temperature expression, a first shell temperature expression and a model parameter conversion model of a to-be-monitored IGBT; the actually measured junction temperature and the actually measured shell temperature of the IGBT to be monitored and initial values of model parameters of the four-order Cauer thermal network model are obtained; fitting the first junction temperature expression in combination with the actually measured junction temperature to obtain a junction temperature initial value coefficient and a time constant; inputting different values of the junction temperature initial value coefficient, the time constant and the model parameter into a model parameter conversion model to obtain a shell temperature initial value coefficient corresponding to each value; inputting each value of the model parameter and the initial value coefficient of the shell temperature into a first shell temperature expression to obtain the shell temperature corresponding to each value; and evaluating the aging state of the to-be-monitored IGBT according to the model parameter corresponding to the shell temperature closest to the actually measured shell temperature. According to the invention, the aging state can be accurately evaluated in real time in different states.

The invention discloses a monitoring circuit and method for the switching state of a power switching device and a motor controller thereof, and relates to the technical field of power switching devices, and the monitoring circuit comprises a driving chip which is used for driving the switching-on and switching-off of the power switching device; the state detection module is connected between the collector electrode or the drain electrode of the power switch device and the ground, and is used for sampling the conduction voltage drop of the power switch device and generating a state detection signal; the input end of the signal isolation and transmission module is connected with the output end of the state detection module, and the signal isolation and transmission module is used for isolating the state detection signal and transmitting the signal to a low-voltage side; and the low-voltage side is configured to judge the turn-on or turn-off state of the power switch device according to the signal output by the signal isolation and transmission module. The on-off state of the power switch device is monitored; dependence on a specific diagnosis function integrated in the driving chip is abandoned, so that the driving chip can be matched with any universal driving chip for use, the system cost is reduced, and the flexibility and universality of circuit design are enhanced.

A semiconductor device, including: a power semiconductor element having a current output electrode; a wire bonded to the current output electrode; and a degradation detection circuit configured to monitor a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to satisfaction of a plurality of conditions including that the power semiconductor element is in a turn-off state, and that a temperature of the power semiconductor element is within a predetermined temperature range.

Power semiconductor-device test apparatuses carrying out gate-signal controlled on / off switching of high-amp test current for various forms of device lifespan testing. Fork plugs or like connectors are insertable through openings of choice in walls partitioning the test apparatus interior for connection, in lieu of altering of wire-line changes, to switch circuits of choice, facilitating test-type connection changing. Sample-connection circuits, removable by means of connectors, include gate-driver, variable-resistor, constant-current, and voltage-output circuits, and via the gate driver circuits generate gate signals, adjustable via the variable-resistor circuits, shorting-circuit on / off applied to the gate terminals of devices under test. The constant-current circuit feeds a diode across the non-gate terminals of a device under test. A control circuit varies current, gate, and output voltages to set the test conditions so that device-under-test temperature will be a predetermined value.

The invention discloses an open-circuit fault diagnosis method and equipment applied to an inverter power supply of a hybrid power device. The method comprises the following steps: acquiring an output voltage or an output current in a current state; obtaining a current state, and obtaining each harmonic amplitude and a total harmonic distortion rate of a normal state; obtaining each harmonic amplitude offset and the total harmonic distortion rate offset of the current state; respectively comparing each subharmonic amplitude offset and the total harmonic distortion rate offset of the current state with the judgment threshold of the corresponding subharmonic amplitude offset and the judgment threshold of the total harmonic distortion rate offset; and determining that the open-circuit fault exists in the current state if the same specific subharmonic amplitude offset of the current state is greater than the judgment threshold of the corresponding subharmonic amplitude offset, or the total harmonic distortion rate offset of the current state is greater than the judgment threshold of the total harmonic distortion rate offset. According to the invention, the open-circuit fault of the inverter power supply of the hybrid power device can be diagnosed.

A power device system comprising: a power device and a controller, the power device comprising: a power switch; and a control terminal driver, and wherein the power device is configured to operate in both a ramp-up and ramp-down diagnostic mode in which the control terminal driver is respectively configured to: apply a test current at the first node of the conduction channel of the power switch; apply a first driver voltage that is less than or greater than the threshold voltage at control terminal of the power switch; increase or decrease, respectively, the first driver voltage until a voltage drop or voltage increase, respectively is detected; and measure the first driver voltage at which the voltage drop is detected as a ramp-up threshold voltage or ramp-down threshold voltage, respectively, wherein the controller is configured to determine a state of health of the power switch based on the ramp-up threshold voltage and the ramp-down threshold voltage.

The invention provides a driving method and device for a short-circuit test of a power semiconductor device, and belongs to the technical field of semiconductor testing. The driving circuit is electrically connected with the secondary side of the isolated power supply circuit and is configured to trigger the device to be tested to execute a short-circuit test based on an external control signal; the isolated power supply circuit is configured to enter a stop working state during a short circuit test based on the external control signal; and providing a working power supply for the driving circuit during the short-circuit test by using the energy stored by the isolation power supply circuit before entering the working stop state. According to the technical scheme, the low-voltage side device in the driving device can be prevented from being damaged due to exposure to high-voltage and large-current conditions in the short-circuit testing process of the to-be-tested device.

This invention proposes a method and system for diagnosing open-circuit faults in three-phase inverter IGBTs, relating to the technical field of power electronic device fault diagnosis. The method involves lightweight processing of acquired historical data to obtain feature vectors; training a pre-defined three-phase inverter IGBT open-circuit fault diagnosis model based on these feature vectors; real-time acquisition of three-phase current data to be processed, followed by bounded normalization to obtain normalized current amplitudes; and generating IGBT open-circuit fault judgment results based on these normalized current amplitudes. Real-time data related to the three-phase inverter IGBT open-circuit fault is collected based on the IGBT open-circuit fault judgment results, and this real-time data is input into the trained three-phase inverter IGBT open-circuit fault diagnosis model to output the three-phase inverter IGBT open-circuit fault diagnosis results. This invention effectively achieves lightweight, efficient, and accurate diagnosis of three-phase inverter IGBT open-circuit faults.

A system is provided. The system includes a semi-conductor device and a gate drive board. The gate drive board (210) provides a voltage to the semi-conductor device. The system also includes a controller (205) and a monitoring circuit. The controller (205) drives the voltage provided by the gate drive board 210). The monitoring circuit (230) is coupled to the gate drive board to monitor operations of the controller and the semi-conductor device.

This invention discloses a high-frequency current detection and control system and method based on a single-tube coil design. Two sets of qualified 200mm circumference flexible current probes (A and B) are used to test the IGBT current and coil current respectively. After connecting the BNC output interface to an oscilloscope, the flexible current probes greatly facilitate the selection of IGBTs and the design and quantitative evaluation of the coil cross-sectional area in single-tube induction cookers. This allows for isolated detection of high-frequency coil current in existing induction cookers, including single-burner and multi-burner models. A precise high-frequency current is generated through a sampling resistor and connected to the AD interface circuit of a DSP. Through the DSP's communication circuit, it can simultaneously communicate with the touch display panel of the existing induction cooker or a computer via an isolated serial port. The touch display panel then communicates with each induction cooker control board via an isolated serial port, achieving closed-loop control functions for cookware identification and cookware compatibility.

A test module (100) and a test apparatus. The test module (100) comprises a capacitor assembly (10), a switch assembly (20), and a frame assembly (30). The capacitor assembly (10) and the switch assembly (20) are both located inside the frame assembly (30), and the capacitor assembly (10) and the switch assembly (20) are connected to a semiconductor device under test. The switch assembly (20) comprises a protective switch, and the protective switch is connected to the capacitor assembly (10).

The application provides a test structure of a metal gate transistor, comprising: a semiconductor substrate; a plurality of transistor structures sharing one metal gate formed on the substrate; a pad assembly comprising a first pad, a second pad, a third pad, a fourth pad, a fifth pad and a sixth pad, all the sources being electrically connected with the first pad, all the drains being electrically connected with the second pad, one end of the metal gate being electrically connected with the third pad and the fourth pad, and the other end of the metal gate being electrically connected with the fifth pad and the sixth pad; wherein the first pad, the second pad and any one of the third pad, the fourth pad, the fifth pad and the sixth pad form a test end of a reliability test, and the third pad, the fourth pad, the fifth pad and the sixth pad form a test end of an electromigration test. The test structure can integrate the reliability test structure and the electromigration test structure separated from each other in the prior art into one test structure, thereby saving the area of the test structure.

The application provides an IGBT testing device and testing equipment, comprising: a control device and a testing device connected in communication; the control device comprises a first Bluetooth module; the testing device comprises a second Bluetooth module and a safety detection module; the testing device is connected with an external IGBT; the control device is used for sending testing data to the second Bluetooth module through the first Bluetooth module; the testing device is used for performing double-pulse testing on the external IGBT according to the testing data, obtaining testing parameters of the external IGBT, and sending the testing parameters to the control device through the second Bluetooth module; and the testing device is also used for stopping testing when the safety detection module generates an alarm signal and sending the alarm signal to the control device through the second Bluetooth module. The safety of IGBT double-pulse testing is improved by remotely performing IGBT testing and setting a safety detection module on the IGBT testing device, so as to guarantee the personal safety of the tester.

A power device system (100) comprising: a power device (101) and a controller (102), the power device (101) comprising: a power switch (103); and a control terminal driver (104), and wherein the power device (101) is configured to operate in both a ramp-up and ramp-down diagnostic mode in which the control terminal driver (104) is respectively configured to: apply a test current at the first node of the conduction channel (105) of the power switch (103); apply a first driver voltage that is less than or greater than the threshold voltage at control terminal (106) of the power switch (103); increase or decrease, respectively, the first driver voltage until a voltage drop or voltage increase, respectively is detected; and measure the first driver voltage at which the voltage drop is detected as a ramp-up threshold voltage or ramp-down threshold voltage, respectively, wherein the controller (102) is configured to determine a state of health of the power switch (101) based on the ramp-up threshold voltage and the ramp-down threshold voltage.

The invention provides an abnormity monitoring method and device for an IGBT power module, and relates to the technical field of energy storage equipment. The method comprises the steps that multi-source operation data of an IGBT power module are acquired according to a key feature subset, and the key feature subset is a data category which is screened out by performing feature importance analysis on the operation data of the IGBT power module and has high junction temperature prediction contribution degree on the IGBT power module; based on the multi-source operation data and the junction temperature sequence within the preset duration, performing junction temperature prediction of the IGBT power module to obtain a junction temperature prediction value; and monitoring whether the IGBT power module operates abnormally or not according to the junction temperature predicted value. According to the invention, accurate early warning can be carried out on abnormal operation of the IGBT power module.

This invention relates to the field of power electronics, specifically addressing an IGBT (Insulated Gate Bipolar Transistor) collector current online detection device and method based on gate current. The detection method involves processing the IGBT gate drive waveform using a Miller plateau detection module to extract the Miller plateau region in the gate drive waveform. The IGBT gate current integration module extracts the voltage across the IGBT gate drive resistor, integrates the voltage waveform during the Miller plateau period, and uses the integration result to characterize the gate current during the Miller plateau. Three sets of integrator output voltages and collector currents under different load currents are measured, and a second-order polynomial fitting is performed internally in the DSP (Digital Signal Processor) to derive a function representing the collector current as a function of the integrator output voltage.

A method for determining a remaining useful lifer of a switch is provided. A position of a switch in a converter is determined. A switching sequence for the converter is determined based on the position of the switch. The converter is operated based on the determined switching sequence. An ON-state voltage across collector and emitter of the switch is measured. A remaining useful life of the switch is determined based on the measured ON-state voltage across collector and emitter.

A process that exhibits: Discharging a gate-source capacitance (C GS ) of a transistor device (1) from a first voltage level (V1) to a second voltage level (V2) when a first resistor (21) is connected in parallel to the gate-source capacitance (C GS ) is switched on, and measuring a first discharge time (T1) in connection with the discharge; Discharge of the gate-source capacitance (C GS ) from the first voltage level (V1) to the second voltage level (V2) when the first resistor (21) and a second resistor (22) are connected in parallel to the gate-source capacitance (C GS ) are switched on, and measuring a second discharge time (T2) in connection with the discharge; Comparing the ratio between the first discharge time (T1) and the second discharge time (T2) with a predefined threshold; and Detecting a fault based on comparison.

This application provides a novel method and apparatus for identifying stray inductance in a bidirectional DC / DC converter, relating to the field of power equipment maintenance. The method includes: energizing an insulated-gate bipolar transistor (IGBT) within the converter to a light-load operating state, and obtaining a light-load distribution map of the stray inductance in the converter using a magnetic display sticker disposed on a special busbar of the converter; obtaining a corresponding predicted distribution map based on the light-load distribution map and a pre-trained image converter; and weakening or shielding the stray inductance based on the predicted distribution map. This application can effectively identify stray inductance in a novel bidirectional DC / DC converter.

The invention provides a three-phase inverter IGBT open-circuit fault diagnosis method and system, and relates to the technical field of power electronic device fault diagnosis, and the method comprises the steps: carrying out the lightweight processing of obtained historical data, and obtaining a feature vector; training a preset three-phase inverter IGBT open-circuit fault diagnosis model based on the feature vector; the method comprises the following steps: acquiring three-phase current data to be processed in real time, performing bounded normalization processing on the three-phase current data to obtain a normalized current amplitude, and generating an IGBT open-circuit fault judgment result based on the normalized current amplitude; and collecting real-time data related to the IGBT open-circuit fault of the three-phase inverter according to the IGBT open-circuit fault judgment result, inputting the real-time data into the trained three-phase inverter IGBT open-circuit fault diagnosis model, and outputting a three-phase inverter IGBT open-circuit fault diagnosis result. The three-phase inverter IGBT open-circuit fault diagnosis method can effectively realize lightweight, efficient and accurate diagnosis of the three-phase inverter IGBT open-circuit fault.

The invention relates to a crimping type insulated gate bipolar transistor performance change testing device under sea wave vibration, and the device comprises a six-degree-of-freedom vibration platform which comprises a bottom plate, a top plate, and a plurality of controllable telescopic rods of which the two ends are connected with the bottom plate and the top plate respectively; the clamp assembly is fixed above the top plate and is used for installing a tested IGBT device; the power supply is connected to the to-be-tested IGBT device and the electrical parameter monitoring module, the vibration controller is connected to the electrical parameter monitoring module and each controllable telescopic rod, the electrical parameter monitoring module is further connected with the to-be-tested IGBT device, the vibration controller generates driving signals of each controllable telescopic rod based on a sea wave spectrum, and the driving signals are transmitted to the to-be-tested IGBT device. The power supply provides direct-current bias current or pulse current for the detected IGBT device, and the electrical parameter monitoring module collects electrical parameters of the detected IGBT device under the action of a sea wave spectrum. Compared with the prior art, the device has the advantages of being compact in structure, capable of simulating sea wave spectrums with higher frequencies and the like.

The invention relates to the technical field of power electronic testing, and discloses an MMC flexible direct-current power transmission module IGBT performance testing device, which comprises a testing power supply module used for providing controllable direct-current voltage and current for a tested power module; the current limiting and protecting unit is arranged at the output end of the test power supply and is used for limiting the output current; the switching control unit is connected with the tested power module and is used for realizing sequential conduction of the plurality of test loops through on-off switching; a signal acquisition unit; and a display and communication unit. Multi-channel automatic testing is achieved through one-time wiring, the testing device is internally provided with a control and processing unit, internal reverse wire switching is controlled through software, forward impedance and conduction performance testing of each IGBT module in a full-bridge or half-bridge structure is completed in sequence, module performance is analyzed and judged according to volt-ampere characteristic data of voltage and current, testing automation is achieved, and testing efficiency is improved. Measurement is accurate and efficiency is high.

A current sense circuit is provided. The circuit includes a current mirror circuit QN1, QN2, and diode-connected QP1, QP2, QP3, and QP4 with their bases connected together, stacking such that the diode-connected side (QN1, QP1, QP3) aligns and connecting the emitter of QP2 to the collector of QP4. Furthermore, the gates of MP1 and MP2 are connected to the collector of QN2 and QP2, respectively. Additionally, the source of MP1 is connected to the drain of MP3 via the source of MP2 and also connected to the source of a Sense MOS. Moreover, the emitter of QP4 is connected to the source of MP4 via R1, and the drain of MP4 is connected to the source (OUT terminal) of a Main MOS. Furthermore, the gates of MP3 and MP4 are connected to the emitters of QN1 and QN2.

The application discloses a grid-connected inverter IGBT fault diagnosis method and system based on a combined observer, aims to improve the diagnosis robustness and precision of the inverter system to the switching device fault, first establishes a state space model of a photovoltaic grid-connected inverter, considers the inverter inductance current, filter capacitor voltage, grid inductance current and total disturbance including the IGBT fault effect; subsequently, designs and runs a supercoil total disturbance observer, estimates and separates the total disturbance of the system in real time; then compensates the disturbance through the estimation result of the interval sliding mode observer, generates interval estimation of the system state and system output; finally, realizes the fault diagnosis of the IGBT in combination with the disturbance estimation deviation and state interval consistency two criteria. The application effectively overcomes the problems of poor anti-disturbance, easy false alarm and missed alarm of the traditional method, enhances the stability, accuracy and reliability of the diagnosis system, and is suitable for the photovoltaic grid-connected inverter IGBT fault detection and diagnosis under complex operating conditions.

This application relates to a test structure and an online testing device for power devices. The test structure includes: multiple parallel test branches, each test branch including a series resistor and a power device under test (DUT), wherein the DUT is connected in series with the series resistor located in the same test branch; and a power supply detection device connected to the test branches, used to apply a bias voltage to the DUT, causing the DUT to be in a blocking state, and to monitor the current in the main circuit in real time. Using this test structure can improve testing efficiency.

The application provides an IGBT short-circuit current rising process monitoring method and device. The IGBT short-circuit current rising process monitoring method comprises the following steps: determining a chip gate voltage according to a gate power supply voltage, a gate turn-on resistor, a gate loop parasitic inductance, a current rising moment and a gate input capacitor; determining a collector current according to the chip gate voltage and a threshold voltage; determining collector-emitter rising data according to the collector current, a direct current voltage, an IGBT working loop parasitic inductance and a rising time period; and monitoring a short-circuit current rising process according to the collector-emitter rising data, which is more economical and safe.

The invention relates to a grid-connected converter IGBT state monitoring method and system based on line voltage acquisition, and the method comprises the steps: 1, monitoring the line voltage change of an IGBT in real time through a voltage sensor, determining the positive and negative properties of the line voltage, and obtaining the rising edge and the falling edge of the line voltage; 2, distributing a rising edge and a falling edge to a phase A and a phase B according to the positive and negative characteristics of a line voltage, and 3, determining rising time and falling time according to level conversion; step 4, obtaining an inductive current, and identifying turn-off and turn-on of the IGBT according to the inductive current; and step 5, obtaining the turn-off time of the corresponding IGBT, and carrying out IGBT state monitoring according to the turn-off time, thereby effectively avoiding the problem of identification ambiguity existing in a traditional method. According to the method, the corresponding relation between the IGBT switching state and the output current is utilized, and the switching process of the six IGBTs of the alternating-current and direct-current converter can be fully monitored only through two sensors.

A method includes applying a voltage with a predefined voltage level between a first load path node and a second load path node of a transistor device; measuring a voltage between a control node and the second load path node to obtain a voltage measurement value; and determining at least one of an electric charge stored in a first internal capacitance or a capacitance value of the internal capacitance effective between the first load path node and the control node based on the first voltage measurement value and based on a capacitance value of a second internal capacitance effective between the control node and the second load path node.