221results about "Bipolar transistor testing" patented technology

The invention discloses a CPLD-driven IGBT short-circuit current dynamic monitoring method and system, and relates to the technical field of power electronics, and the method comprises the specific steps of S100 real-time data acquisition, S200 dynamic threshold calculation, S300 short-circuit state judgment, S400 rapid protection execution, and S500 fault data recording and uploading. Accurate and prospective judgment of the short circuit state of the IGBT is achieved, two stress parameters including the direct-current bus voltage and the junction temperature serve as independent variables, when the bus voltage rises, the voltage stress borne by the IGBT in the turn-off period is increased, meanwhile, the current peak at the short circuit moment is more remarkable, early warning is conducted in advance by dynamically lowering the threshold value, and therefore the short circuit state of the IGBT is accurately judged. According to the mechanism, the monitoring system does not simply respond to the occurred overcurrent, but can pre-judge the safety boundary of the device under the current working condition, so that intervention is implemented before the current really reaches a dangerous peak value, and a protection blind area under a severe working condition is effectively avoided.

The present application provides a method and system for predicting the remaining service life of an IGBT device, comprising: simulating an IGBT device power cycle aging experiment, collecting conduction voltage drop historical data on the basis of the experiment, and respectively obtaining a model parameter empirical value and a model parameter estimated value on the basis of the conduction voltage drop historical data; constructing a first state weight on the basis of the current operation state, and performing smooth adjustment on the model parameter estimated value on the basis of the model parameter empirical value and the first state weight to obtain a parameter correction result; and establishing a state transition equation on the basis of the parameter correction result, and predicting the remaining service life of an IGBT device on the basis of the state transition equation. Use of the present application can improve the accuracy of prediction of the remaining service life of the IGBT device.

The invention discloses a frequency converter maintenance test system with a protection function, which belongs to the technical field of frequency converter testing and comprises a detection seat, a simulation unit for simulating actual working conditions of a frequency conversion control panel is arranged on the detection seat, and a detection mechanism for detecting a diode in the frequency conversion control panel is further arranged on the detection seat. Through dynamic cooperation of the polarization assembly and the rotary simulation disc, the vibration direction of the vibration source can be flexibly adjusted, so that a multi-dimensional vibration scene possibly encountered in actual work of the frequency conversion control panel is covered, and the problem that vibration source simulation is lacked in a traditional frequency converter testing process is solved; an elastic supporting environment of actual installation is simulated through the air bag spring suspension, vibration energy emission distortion caused by rigid fixation is avoided, the accuracy of a large-capacitance vibration fatigue test is improved, automatic step-by-step wiring operation of detection is achieved through cooperation of the detection driving assembly and the universal test meter, and the overall detection wiring efficiency is improved.

Disclosed in the present invention are a resistor-based voltage-withstanding on-state voltage drop measurement circuit for junction temperature monitoring, and a monitoring method. The measurement circuit comprises: a high-resistance series high-voltage resistor RL; switching diodes D1 and D2; a low-voltage MOSFET M1; a phase inverter U1; a three-state gate U2; an RC delay circuit consisting of a resistor R1 and a capacitor C1; current-limiting resistors R2 and R3; auxiliary voltage sources VDD and VCC; an operational amplifier U3; and an isolation operational amplifier U4. The monitoring method comprises: designing an on-state voltage drop sampling circuit based on a high-resistance resistor, and performing parameter selection on the basis of an actual application scenario; measuring a collector current and on-state voltage drop model at different junction temperatures under offline conditions, so as to provide a calculation model for online monitoring; and under online conditions, performing online monitoring of junction temperature on the basis of the model obtained by means of performing testing under the offline conditions. The present invention has the advantages of being low cost, having high reliability, and adaptability to on-state voltage drop measurement at a high voltage and within a wide ambient temperature range.

The invention discloses a power device driver and a parameter correction method thereof, which are applied to the technical field of power device driving, and are characterized in that a data acquisition module acquires grid voltage and peak current of an IGBT (Insulated Gate Bipolar Translator) in the working process of the IGBT to obtain sampling data; the digital isolation chip realizes electrical isolation among the data acquisition module, the MCU and the grid voltage regulation module; the MCU calibrates the real-time junction temperature data based on the sampling data by using a preset junction temperature calibration formula and outputs calibrated junction temperature data; the gate driving chip outputs a gate voltage capable of driving the IGBT according to the control signal; the second-order short-circuit protection module sends an abnormal signal to the MCU when the IGBT is short-circuited, so that the MCU sends a grid voltage regulation trigger signal to the grid voltage regulation module; the grid voltage adjusting module responds to the grid voltage adjusting trigger signal and controls itself to reduce the grid voltage. Based on the power device driver and the parameter correction method thereof provided by the invention, the junction temperature monitoring precision and reliability are improved.

The invention relates to the technical field of modular multilevel converters, and provides an MMC fault diagnosis method, system and device based on a sorting voltage-sharing algorithm. Comprising the steps that according to measurement data of the modular multilevel converter, a theoretical value and an actual value of bridge arm voltage of the modular multilevel converter are obtained through calculation, the theoretical value and the actual value are compared with a first alarm threshold value, and a corresponding bridge arm fault and a fault type are determined; calculating the number of fault sub-modules according to the bridge arm voltage actual value and the bridge arm voltage theoretical value; judging the switching number of the fault bridge arm sub-modules, and controlling and adjusting the bridge arm sub-modules to be switched on according to the fault type and the number of the fault sub-modules; and calculating a capacitor voltage minimum difference value, comparing the capacitor voltage minimum difference value with a second alarm threshold value, and determining a fault sub-module. According to the multi-tube fault diagnosis method, the problem that the fault positioning performance is poor under the light load working condition is solved, and the sub-module positioning performance in the full power range is improved.

The present invention discloses a resistor voltage-bearing type on-state voltage drop measurement circuit for junction temperature monitoring and a monitoring method. The measurement circuit includes a high-resistance series high-voltage resistor RL, switching diodes D1 and D2, a low-voltage MOSFET M1, an inverter U1, a three-state gate U2, an RC delay circuit consisting of a resistor R1 and a capacitor C1, current-limiting resistors R2 and R3, auxiliary voltage sources VDD and VCC, an operational amplifier U3, and an isolation operational amplifier U4. and the monitoring method includes: designing an on-state voltage drop sampling circuit based on the high-resistance resistor and selecting parameters according to an actual application scenario; measuring a collector current and an on-state voltage drop model at different junction temperatures under an offline condition, and providing a calculation model for online monitoring; and performing online monitoring on the junction temperature.

The invention discloses a fault diagnosis method, device and equipment for an NPC three-level inverter and a medium, and relates to the technical field of inverter fault diagnosis, and the method comprises the steps: building a fault stator current analysis model according to a fault stator current change rule of the inverter; a fault phase and a fault bridge arm are extracted and positioned by using a sliding window averaging method; and calculating and setting a fault positioning reference value under an ideal condition, and comparing the fault positioning reference value with a fault positioning actual value under an actual condition to position a faulted IGBT (Insulated Gate Bipolar Translator). A fault stator current analysis model is established to simulate a set current change condition under an ideal condition, a fault positioning reference value is calculated, and whether an actual fault condition is consistent with a set ideal fault condition is distinguished by a deviation between the fault positioning reference value and a fault positioning actual value of an actual condition, and whether a fault is an inner pipe or an outer pipe is positioned. During calculation, a current mean value from a fault moment to a first zero-crossing moment is utilized, a fault IGBT can be positioned in a fundamental wave period, and fault diagnosis and positioning can be quickly and efficiently carried out.

The invention provides a method and a device for identifying a second-class short circuit state of an insulated gate bipolar transistor (IGBT), and relates to the technical field of IGBT devices. The invention aims to timely and accurately judge whether the insulated gate bipolar transistor is in the second-class short circuit state or not. The method comprises the following steps: acquiring an emitter structure of an insulated gate bipolar transistor in a test circuit; if the emitter structure does not have the auxiliary emitter, acquiring a chip gate voltage, a gate side line parasitic inductance, a gate parasitic inductance, an emitter side line parasitic inductance, a common emitter parasitic inductance, a gate current, a collector current and a current from a gate to a collector in a gate driving loop; on the basis of the Kirchhoff's voltage law, grid voltage is determined through the collected parameter data; and if the grid voltage is within the preset short-circuit voltage range, determining that the insulated gate bipolar transistor has a second-class short circuit.

The invention discloses an IGBT life prediction method based on adaptive unscented particle filtering of time sequence form perception optimization, and belongs to the technical field of health prediction and reliability engineering. The method aims at the problems that a traditional filtering algorithm is prone to falling into local optimum in a high-dimensional parameter space and prediction trajectory forms are discontinuous, and comprises the steps that firstly, an IGBT nonlinear degradation model is established through a state-space equation; performing Sigma point sampling and nonlinear propagation at a particle level by adopting an unscented transformation and particle filtering cooperation mechanism, and fusing process noise to realize dynamic state prediction; constructing a Gaussian likelihood function by using the deviation between a predicted value and an actual observed value to generate a system residual sequence; an FCD fusion index is innovatively introduced, the index fuses a Pearson correlation coefficient and a Frechet distance to synchronously quantify trend consistency and form similarity, and self-adaptive genetic optimization is driven accordingly; and repeating the behaviors before a preset termination condition is met, and continuously updating the parameters of the state-space equation.

A half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

The invention relates to an evaluation system. A method includes evaluating a first parameter, a second parameter, and a third parameter of a power switch. The first evaluation mode includes receiving a first sense current from the power switch at the common sense terminal; and measuring a first parameter during a switching event of the power switch based on the first sensed current. The second evaluation mode includes outputting a second sense current from the common sense terminal to the power switch; and measuring a second parameter dependent on a current flow of the second sense current through the power switch, the current flow dependent on an electrode voltage present at the drain or collector of the power switch. The third evaluation mode includes generating a third sense current at the common sense terminal; and measuring a third parameter generated based on the third sensed current and a temperature of the power switch.

The invention discloses a grid-connected inverter IGBT (Insulated Gate Bipolar Translator) fault diagnosis method and a grid-connected inverter IGBT fault diagnosis system based on a combined observer, and aims to improve the fault diagnosis robustness and accuracy of a switching device by an inverter system. Inverter inductive current, filter capacitor voltage, power grid inductive current and total disturbance including IGBT fault effect are considered; then, designing and operating a superhelix total disturbance observer, and estimating and separating the total disturbance of the system in real time; disturbance compensation is carried out through an estimation result of the interval sliding mode observer, and interval estimation of a system state and system output is generated; and finally, realizing IGBT fault diagnosis by combining two criteria of disturbance estimation deviation and state interval consistency. According to the method, the problems that a traditional method is poor in disturbance resistance and prone to false alarm and missing alarm are effectively solved, the stability, accuracy and reliability of a diagnosis system are enhanced, and the method is suitable for photovoltaic grid-connected inverter IGBT fault detection and diagnosis under the complex operation condition.

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

The disclosure relates to an electronic circuit arrangement comprising at least one voltage-controlled power transistor (VCPT, MOSFET, IGBT), the electronic circuit arrangement comprising a degradation measurement module (DMM) for monitoring the degradation of the at least one voltage-controlled power transistor (VCPT), the degradation measurement module comprising a current injection module (CIM) which is connected to the emitter of the at least one voltage-controlled power transistor (VCPT), and a degradation measurement module (DMM), the degradation measurement module being able to measure a first voltage (Veg) following a current injection (Iinj) at the emitter of the at least one voltage-controlled power transistor (VCPT), the current injection module (CIM) and the degradation measurement module (DMM) being connected to the same ground.

The invention discloses a fault diagnosis method and system for an active device of an active magnetic suspension bearing power amplifier, and belongs to the technical field of magnetic suspension bearings, and the method comprises the steps: controlling each winding to be in an upward follow current state and a downward follow current state at the initial moment and the end moment of a switching period under a normal working condition; respectively acquiring direct-current bus current ibus1 and ibus2 at a starting moment and an ending moment, and winding current at an intermediate moment, and predicting winding current of a next switching period according to the winding current; if ibus1 is equal to 0 and ibus2 is equal to 0 and the error between the winding current predicted value and the measured value in the next switching period is large, the corresponding winding is controlled to be in a charging state at the initial moment of the next switching period, the direct current bus current and the winding current are compared, and if the error between the direct current bus current and the winding current is large, it is judged that a corresponding phase current sensor breaks down; and if ibus1 = 0 and ibus2 = 0 are not satisfied, judging that a transistor fault occurs. According to the invention, effective and rapid diagnosis of the active device in the magnetic suspension bearing power amplifier can be realized.

The embodiment of the invention provides a crimping type IGBT junction temperature measurement method and device based on a complex parameter atlas. The method comprises the steps that temperature-sensitive electrical parameters generated in the current operation process of a crimping type IGBT device are collected; according to the current operation condition, a corresponding map is determined from a plurality of pre-trained complex parameter action maps, and the complex parameter action maps are obtained by sampling current and voltage signals under multiple working conditions at a high speed, extracting dynamic temperature-sensitive electrical parameters, modeling by utilizing multiple regression or machine learning, and obtaining the dynamic temperature-sensitive electrical parameters. The mapping function is converted based on a fitting algorithm; inputting the temperature-sensitive electrical parameters into the complex parameter action atlas based on an interpolation method so as to obtain a junction temperature calculation result of the current crimping type IGBT; according to the method, the map of the influence of the complex parameters on the temperature-sensitive electrical parameters can be generated through multi-dimensional fitting, and accurate prediction of the junction temperature under different working conditions is realized.

A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement terminal and a second measurement point electrically connected to the emitter electrode, so that a voltage which drops over the temperature sensor is measurable between the measurement terminal and the first emitter terminal for the temperature measurement. Corresponding methods for determining a temperature of a power semiconductor element and for determining a sign of a load current in a bridge circuit are also described.

This invention relates to the field of power electronics technology, specifically to an online detection device and method for IGBT collector current based on gate current. The detection method includes: a drive Miller plateau detection module processing the IGBT gate drive waveform to extract the Miller plateau region; an IGBT drive current integration module extracting the voltage across the IGBT gate drive resistor, integrating the voltage waveform during the Miller plateau period, and using the integration result to characterize the gate current during the Miller plateau period; measuring the integrator output voltage and collector current under three different load currents, and performing second-order polynomial fitting within a DSP to fit a function of the collector current with respect to the integrator output voltage. This fitting result allows for online measurement of the collector current via the gate current. This method avoids the use of high-voltage, high-power devices, is easy to integrate, has low detection costs, and is easy to implement.

The invention discloses an IGBT aging monitoring method and apparatus, and an electronic device. The method comprises the steps of obtaining a pre-established first junction temperature expression, a first shell temperature expression and a model parameter conversion model of a to-be-monitored IGBT; the actually measured junction temperature and the actually measured shell temperature of the IGBT to be monitored and initial values of model parameters of the four-order Cauer thermal network model are obtained; fitting the first junction temperature expression in combination with the actually measured junction temperature to obtain a junction temperature initial value coefficient and a time constant; inputting different values of the junction temperature initial value coefficient, the time constant and the model parameter into a model parameter conversion model to obtain a shell temperature initial value coefficient corresponding to each value; inputting each value of the model parameter and the initial value coefficient of the shell temperature into a first shell temperature expression to obtain the shell temperature corresponding to each value; and evaluating the aging state of the to-be-monitored IGBT according to the model parameter corresponding to the shell temperature closest to the actually measured shell temperature. According to the invention, the aging state can be accurately evaluated in real time in different states.

The invention provides an IGBT device internal current sensing method and device based on Z-axis magnetic field measurement, and relates to the technical field of electrical engineering.The method comprises the steps that a short coil array is arranged on the surface of a to-be-measured crimping type IGBT device, and the short coil array comprises a plurality of short coils arranged in an array in the Z-axis direction; connecting the two ends of each short coil with an integrator circuit; measuring the induced electromotive force generated by the two ends of each short coil in the Z-axis direction; the measured induced electromotive force generated at the two ends of each short coil is converted into current distribution change near the short coil through an integrator circuit connected with the two ends of each short coil; and analyzing the current distribution state of the chip in the device based on the current distribution change near the short coil. The current distribution in the device can be accurately measured and sensed, whether an overheated chip area exists in the device or not can be accurately judged, intervention is carried out in time, safety early warning is achieved, and the service life of the device is prolonged.

The present invention discloses a test system for inverter maintenance with a protective function, belonging to the field of inverter testing technology. The system includes a detection base, a simulation unit for simulating the actual working conditions of a frequency conversion control board, and a detection mechanism for detecting the internal diode of the frequency conversion control board. The present invention can flexibly adjust the vibration direction of the vibration source through the dynamic coordination of a polarization component and a rotating simulation disk, thereby covering the multi-dimensional vibration scenarios that may be encountered in the actual operation of the frequency conversion control board, solving the problem of lack of vibration source simulation in the traditional frequency conversion test process, and simulating the elastic support environment of the actual installation through an airbag spring suspension, avoiding the distortion of vibration energy emission caused by rigid fixation, thereby improving the accuracy of large-capacitor vibration fatigue testing, and realizing automatic step-by-step wiring operation of the detection by cooperating with a multimeter through the detection drive component, thereby improving the overall detection wiring efficiency.

The invention discloses a monitoring circuit and method for the switching state of a power switching device and a motor controller thereof, and relates to the technical field of power switching devices, and the monitoring circuit comprises a driving chip which is used for driving the switching-on and switching-off of the power switching device; the state detection module is connected between the collector electrode or the drain electrode of the power switch device and the ground, and is used for sampling the conduction voltage drop of the power switch device and generating a state detection signal; the input end of the signal isolation and transmission module is connected with the output end of the state detection module, and the signal isolation and transmission module is used for isolating the state detection signal and transmitting the signal to a low-voltage side; and the low-voltage side is configured to judge the turn-on or turn-off state of the power switch device according to the signal output by the signal isolation and transmission module. The on-off state of the power switch device is monitored; dependence on a specific diagnosis function integrated in the driving chip is abandoned, so that the driving chip can be matched with any universal driving chip for use, the system cost is reduced, and the flexibility and universality of circuit design are enhanced.

The invention discloses a device test circuit and a device test method, and belongs to the technical field of semiconductors. In the embodiment of the invention, the target device is driven to be switched on through the driving control circuit, and under the condition that the target device is switched on, the target device is controlled to work in the linear region through the power supply control circuit. When a target device works in a linear region, by taking the MOS tube as an example, the MOS tube working in the linear region can correspondingly generate large drain-source current under the action of large drain-source voltage. Therefore, the target device can bear large voltage and large current for a certain time at the same time by testing the current through the device, so that the target device is subjected to large thermal stress, the junction temperature of the target device is rapidly improved, the junction temperature can reach 200 DEG C or above, and deep defects in the device can be found. And the large current generated by the target device working in the linear region is far smaller than the current used when the device is screened in a large current mode, so that complicated heat dissipation equipment is not needed correspondingly.

The application relates to an MMC sub-module IGBT open-circuit fault diagnosis method based on an improved density clustering algorithm and belongs to the field of power electronic devices. The method comprises the following steps: extracting the capacitor voltage of each sub-module in a modular multilevel converter, and obtaining the capacitor voltage spectrum after discrete processing and Fourier transformation; extracting a feature vector containing a frequency mean value, a root mean square frequency, a standard deviation frequency and a center frequency according to the capacitor voltage spectrum; adopting an improved density clustering algorithm based on a GOOSE optimization algorithm to classify faults for the feature vector corresponding to each sub-module; determining the sub-module corresponding to the output result of the improved density clustering algorithm existing a noise point as an open-circuit fault, and judging the fault category according to the device position in the sub-module. The improved DBSCAN algorithm based on the GOOSE optimization algorithm is used to judge the fault sub-module, can diagnose multiple fault points, has high diagnosis precision and strong real-time performance.

A method for in situ threshold voltage determination of a semiconductor device includes sourcing a current to a first terminal of the semiconductor device. A gate terminal of the semiconductor device is driven with a plurality of gate levels. Each gate level includes one of a plurality of different gate voltages. A transistor voltage is measured between the first terminal and a second terminal of the semiconductor device during each gate level. The respective gate voltage is stored in response to the semiconductor device voltage transitioning past a voltage limit. A temperature dependent threshold voltage of the semiconductor device is estimated for a first measured temperature measured during the storing of the stored gate voltage from a previously stored gate voltage and a second measure temperature.

This invention discloses an automatic leakage current reliability detection circuit and method for IGBT devices. The circuit includes: a PWM control unit; and an interlock detection unit composed of an HTGB test circuit and an HTRB test circuit. The PWM control unit is connected to the interlock detection unit and is used to control the HTGB and HTRB test circuits in the interlock detection unit to automatically perform interlock tests. The interlock detection unit is used to perform HTGB and HTRB interlock tests on the IGBT device to obtain the gate-emitter leakage current or collector-emitter leakage current of the IGBT device. The automatic leakage current reliability detection circuit and method for IGBT devices provided by this invention not only achieves automatic detection of HTGB and HTRB tests, but also protects the device under test when the leakage current is too high, reduces equipment redundancy, simplifies the testing process, and lowers costs.

A semiconductor device, including: a power semiconductor element having a current output electrode; a wire bonded to the current output electrode; and a degradation detection circuit configured to monitor a temporal change of a voltage value of the wire while a constant current flows through the wire, responsive to satisfaction of a plurality of conditions including that the power semiconductor element is in a turn-off state, and that a temperature of the power semiconductor element is within a predetermined temperature range.

Power semiconductor-device test apparatuses carrying out gate-signal controlled on / off switching of high-amp test current for various forms of device lifespan testing. Fork plugs or like connectors are insertable through openings of choice in walls partitioning the test apparatus interior for connection, in lieu of altering of wire-line changes, to switch circuits of choice, facilitating test-type connection changing. Sample-connection circuits, removable by means of connectors, include gate-driver, variable-resistor, constant-current, and voltage-output circuits, and via the gate driver circuits generate gate signals, adjustable via the variable-resistor circuits, shorting-circuit on / off applied to the gate terminals of devices under test. The constant-current circuit feeds a diode across the non-gate terminals of a device under test. A control circuit varies current, gate, and output voltages to set the test conditions so that device-under-test temperature will be a predetermined value.

The invention discloses an open-circuit fault diagnosis method and equipment applied to an inverter power supply of a hybrid power device. The method comprises the following steps: acquiring an output voltage or an output current in a current state; obtaining a current state, and obtaining each harmonic amplitude and a total harmonic distortion rate of a normal state; obtaining each harmonic amplitude offset and the total harmonic distortion rate offset of the current state; respectively comparing each subharmonic amplitude offset and the total harmonic distortion rate offset of the current state with the judgment threshold of the corresponding subharmonic amplitude offset and the judgment threshold of the total harmonic distortion rate offset; and determining that the open-circuit fault exists in the current state if the same specific subharmonic amplitude offset of the current state is greater than the judgment threshold of the corresponding subharmonic amplitude offset, or the total harmonic distortion rate offset of the current state is greater than the judgment threshold of the total harmonic distortion rate offset. According to the invention, the open-circuit fault of the inverter power supply of the hybrid power device can be diagnosed.