445results about "Bipolar transistor testing" patented technology

Systems, methods and devices which utilize Spread Spectrum Time Domain Reflectometry (SSTDR) techniques to measure degradation of electronic components are provided. Such measurements may be implemented while the components “live” or otherwise functioning within an overall system. In one embodiment, monitoring a power converter in a high power system is accomplished. In this embodiment, degradation of components within the power converter (e.g. metal-oxide-semiconductor field-effect transistors (MOSFETs), capacitors, insulated-gate bipolar transistors (IGBTs), and the like) may be monitored by processing data from reflections of an SSTDR signal to determine changes in impedance, capacitance, or any other changes that may be characteristic of components degrading. For example, an aging MOSFET may experience an increase of drain to source resistance which adds additional resistance to a current path within a power converter. Such a change is able to be analyzed monitored upon processing the reflected test signals.

The present invention relates to a current transformer IGBT power module field double-pulse testing system and a method. The testing system comprises a double-pulse testing circuit which comprises a double-pulse testing circuit which comprises an input power supply (1), a current transformer and a load which are connected in order, a detection unit which is used for detecting the relevant parameters of each IGBT in the IGBT power module (3) in the current transformer, a data acquisition unit which is connected to the detection unit and is used for collecting the measured relevant parameters of the IGBT, and a data processing unit which is connected to the data acquisition unit and is used for carrying out analyzing processing on the measured relevant parameters of the IGBT. The testing method comprises the steps of (1) constructing a double-pulse testing circuit, (2) carrying out data measurement to measure the switch parameter of each IGBT in the IGBT power module (3) in the current transformer, and (3) carrying out data processing to carrying out analyzing processing on the measured switch parameter of the IGBT. Compared with the prior art, the system and the method have the advantages of accurate measurement and convenient measurement and are suitable for field measurement.

The invention relates to a component comprising an insulated gate bipolar transistor (IGBT). The IGBT is connected with a gate driver, and the gate driver is used for receiving a gating signal for driving the IGBT, and providing a feedback signal of the IGBT. The feedback signal reflects the changes of the voltage from a collector electrode to an emitting electrode of the IGBT. The component further comprises a failure mode detection unit which is used for judging whether the IGBT fails or not based on the time sequence of the gating signal and the feedback signal and differentiating the failures including gate driver failures, turning-on failure failures, short-circuit failures, turning-on overvoltage failures and turning-off overvoltage failures.

In an electrical circuit for testing electrical current using a plurality of precision resistors connected in parallel or in series, a range finder for receiving the current to be measured with the voltage drop across the range finder being indicative of a current sub-range for measurement. In a preferred embodiment, a range finder has a first bipolar transistor and a second bipolar transistor connected in parallel and in opposite polarity with the emitter and base of each transistor connected together whereby each transistor functions as an emitter-base diode.

The invention provides an IGBT aging state monitoring method and an IGBT aging state monitoring device. The IGBT aging state monitoring method comprises the steps of outputting a normal voltage through a voltage stabilization chip in a measurement circuit, and when a voltage stabilization chip control signal is in a high level, outputting a driving voltage by the measurement circuit for switching on a to-be-monitored IGBT; setting the voltage stabilization chip control signal to a low level, setting the output voltage of the voltage stabilization chip to zero, and when the gate voltage of the IGBT reduces to an on threshold voltage and the current which flows over the IGBT is zero, making the driving voltage slowly and continuously drop, intercepting a driving voltage waveform which is output from the measurement circuit and a corresponding collector electrode current waveform, obtaining the transmission characteristic curve of the to-be-monitored IGBT; and monitoring the aging state of the to-be-monitored IGBT through utilizing the on threshold voltage and a transconductance of the to-be-monitored IGBT as aging state characteristic quantities, wherein the on threshold voltage and the transconductance are extracted through the transmission characteristic curve. The IGBT aging state monitoring method and the IGBT aging state monitoring device have an advantage of quick and accurate monitoring on the aging state of the IGBT.

The invention discloses an IGBT online state monitoring method and measuring system based on Miller platform delay. One end of a drive signal pre-processing circuit is connected with one end of a controller through a time measuring circuit. The other end of the controller and the drive chip of an IGBT device drive circuit are connected. The drive chip is divided into two paths. One is connected with an IGBT device, and the other is connected with the drive signal pre-processing circuit. The drive signal pre-processing circuit extracts the Miller platform delay in a drive voltage signal of an IGBT turn-on process as the characteristic parameter of IGBT state monitoring to carry out initial state calibration and real-time online monitoring. The health and reliability of the IGBT device during an aging process are evaluated. According to the invention, online monitoring and parameter extraction do not affect the operation of a main circuit, and are sensitive to various typical failure modes; and the method and the system can be directly used for health monitoring and service life evaluation of the IGBT, and solve the problem of lack of effective characteristic parameters in the existing state monitoring technology of power electronic devices.

A jig for use in a semiconductor test of the present invention includes; a base on which a probe pin and an insulating material are provided such that the probe pin is surrounded by the insulating material in plan view; and a stage arranged to face a surface of the base on which the probe pin and the insulating material are provided. The stage is capable of receiving a test object placed on a surface facing the base. When the test object is placed on the stage and the base and the stage move in a direction in which they get closer to each other, the probe pin comes into contact with an electrode formed on the test object, and the insulating material comes into contact with both the test object and the stage.

The invention relates to an IGBT intermittent life test method based on simulation modeling and a short-time test. The method comprises the following steps of step1, determining a heat dissipation condition; step2, determining a parameter control method; step3, determining a failure criterion; step4, determining a device power size and a junction temperature control range; step5, carrying out safeoperation area and maximum allowable junction temperature analysis; step6, implementing the short-time test; step7, carrying out simulation modeling analysis; and step8, optimizing an intermittent life test scheme. In the method, the heat dissipation condition, the parameter control method, the power size, a temperature range, the safe operation area, a failure mechanism and other factors are comprehensively considered; several sets of intermittent life test schemes are preselected; through carrying out a short-time power circulation test, temperature increasing and decreasing time of a device in single circulation is acquired; a simulation method is used to acquire a power circulation frequency before device failure; and actual power circulation test time of each preselection scheme is pre-estimated so that an optimal intermittent life test scheme is acquired through optimization. The method belongs to the power device reliability evaluation technology field.

A semiconductor test device and method for sequentially carrying out tests including an AC test, DC test, and thermal resistance test on a power semiconductor device are provided. The semiconductor test device includes a holding unit that positions the power semiconductor device. Test units each generate a test signal for the power semiconductor device and determine a test result generated in response to the test signal. A connection unit switches between the test units and selectively connects the test units electrically to electrodes of the power semiconductor device. The connection unit is controlled such that the test units are sequentially connected to the power semiconductor device to perform a plurality of the tests. The connection unit may include parallel plate electrodes in proximity to each other across an insulating sheet. The parallel plate electrodes may connect the power semiconductor device to positive and negative power sources of the test unit.

The invention relates to a method for constructing a state evaluation and remaining life prediction model of an IGBT module. The method comprises the following steps: measuring electric heating parameters of the IGBT module under different aging degrees through testing; establishing a functional model of average crust thermal resistance change rate-average power cycle index and a functional modelof average saturation pressure drop change rate-average power cycle index of test samples of the IGBT module; evaluating the aging state of the IGBT module according to the above functional models, and expressing the aging state of the IGBT by a real number on the interval [0, 1] to obtain a state evaluation result; and establishing a calculation model of the remaining life of the IGBT module according to the state evaluation result. The method provided by the invention establishes mathematical models of electrical parameters, thermal parameters and power cycle indexes according to a power cycle accelerated aging test, and the models comprehensively consider the influence of electrical parameters and thermal parameters on the evaluation results to make up for the deficiency of single parameter evaluation, thereby accurately obtaining the aging state of the IGBT module under the condition of thermal resistance and saturation voltage drop of a certain crust.

The invention discloses an online monitoring method for degradation of an insulated gate bipolar transistor (IGBT). The online monitoring method can be used for monitoring the degradation degree of the IGBT in actual operating process, so as to send out early warning before the IGBT fails. The online monitoring method comprises the steps of: under the condition that the IGBT does not degrade, conducting a temperature experiment on an IGBT to be monitored, measuring junction temperature indexes (invariant voltage drop) representing IGBT junction temperature levels at different junction temperatures of the IGBT to be monitored and degradation indexes (conductive resistance) representing IGBT degradation degrees, and calculating a proportionality coefficient of degradation index variable quantity and junction temperature index variable quantity under the same junction temperature variation; and under the condition that the IGBT degrades, measuring a junction temperature index and a degradation index online, carrying out optimization of removing junction temperature influence on the degradation index by combining with the proportionality coefficient obtained through the temperature experiment under the normal condition, and monitoring the degradation degree of the IGBT to be monitored according to the optimized degradation index.

A prober includes: a wafer chuck having a conductive support surface; a movement rotation mechanism which moves and rotates the wafer chuck; a head stage which holds a probe holding portion; a stage member which has a conductive stage surface that is formed in parallel to the support surface and electrically connected with the support surface, and can move integrally with the wafer chuck; and a contactor which is fixed to a position facing the stage member and whose tip can electrically come into contact with the stage surface, wherein the stage member is separated from the wafer chuck as a separate body, and the stage surface and the support surface are electrically connected through a wiring member; and a back-surface electrode of a chip is electrically connected with a tester through the wafer chuck, a wiring, the stage member and the contactor.

The invention provides an insulated gate bipolar transistor (IGBT) test circuit and method. According to the circuit, a first switch and a first power source are connected in series to form a first series circuit; a capacitor and the first series circuit are connected in parallel to form a parallel circuit; a IGBT to be tested, a current harvester and a protection element are connected in series to form a second series circuit; the second series circuit is connected in parallel with a series circuit through a second switch, wherein the series circuit is composed of the parallel circuit and aninductor; a first current source and a second current source are connected in parallel with the second series circuit; a voltage detection unit is connected in parallel with the collector and emitterof the IGBT to be tested; and a control unit is connected with the gate of the IGBT to be tested. According to the insulated gate bipolar transistor (IGBT) test circuit and method, a circuit composedof the first power source, the first switch, the second switch, the inductor, and the capacitor is adopted to simulate short-circuit current during a fault; the IGBT to be tested is disconnected whencollector and emitter current collected by the current harvester reaches a preset value of the short-circuit current; Rce testing and Vce testing are performed; the operating condition of the IGBT ofa direct-current circuit breaker can be simulated more accurately, and a test result is closer to an actual fault condition; and test accuracy can be improved.

A method for monitoring online condition of an IGBT module bonding wire comprises the following steps of step 1, building a full-bridge inverter circuit and a VCE online measurement circuit, and connecting both input terminals of the VCE online measurement circuit to the collector and emitter of the IGBT power module of the full-bridge inverter circuit to realize the connection between the full-bridge inverter circuit and the VCE online measurement circuit; step 2, establishing a three-dimensional data model of the healthy IGBT; step 3, establishing an IGBT three-dimensional data model of thebond wire break; step 4, optimizing the least squares support vector machine by a genetic algorithm; and step 5, using the optimized least squares support vector machine to evaluate the state of the 3D data model obtained in the steps 2 and 3. The method provided by the invention closely links the online monitoring and state evaluation, and helps to improve the health management mechanism of the IGBT module bonding wire.

In an electrical for testing electrical current using a plurality of precision resistors connected in parallel or in series, a range finder for receiving the current to be measured with the voltage drop across the range finder being indicative of a current sub-range for measurement. In a preferred embodiment, a range finder comprises a first bipolar transistor and a second bipolar transistor connected in parallel and in opposite polarity with the emitter and base of each transistor connected together whereby each transistor functions as an emitter-base diode.

The invention discloses an IGBT device test circuit and test method. The test circuit comprises a double-pulse test module used for testing on and off performance of an IGBT, a current endurance capability test module used for testing the current endurance capability of the IGBT under the condition of simulating the bipolar short circuit of a converter valve, an acquisition module used for acquiring the collector voltage and the emitter current of the IGBT, and a protection module used for cutting off the connection between the double-pulse test module and the IGBT when the collector voltage and / or emitter current of the IGBT exceed / exceeds a corresponding preset threshold(s). According to the invention, the switching-on and switching-off performance of the IGBT is tested by using the double-pulse test module, and the situation that the surge current impacts the IGBT under the bipolar short circuit condition of the converter valve is simulated by using the square wave current continuously output by a current source, so that the comprehensiveness and diversity of the IGBT performance test are further improved.

The invention relates to a dynamic testing platform of IGBT with high voltage and large current and testing method thereof, belonging to the field of technology of power electronic semiconductor devices. The testing platform mainly achieves the communication between upper and lower computers based on Labview and DSP, the main functions of which are: (1) test conditions are sent to a DSP controller by a Labview of an upper computer through a programmable controlled voltage source controlled by communication lines and an oscilloscope; (2) the adjustable output voltage of programmable controlled voltage source, the settable oscilloscope and the Labview which can automatically reads oscilloscope waves are achieved; (3) the protection from hardware and software failures like undervoltage, overvoltage and overcurrent is achieved in the whole control system based on DSP, the power is cut and the discharge circuit is enabled once the failures happen in the system for ensuring the normal system tests and the strict security of testing equipments and testers; (4) the oscilloscope data and the 8 dynamic testing parameters are displayed by the Labview of the upper computer and saved as Excel forms for further analysis and summary.

The invention regards an method for estimating the end of lifetime for a power semiconductor device, such as an IGBT power module, comprising the steps of; establishing the temperature of the power semiconductor device, determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, wherein the end of lifetime is established dependent on the change in a plurality of determined voltage drops.

A semiconductor device capable of simplifying wiring work is provided. A semiconductor device includes a semiconductor element (insulated gate bipolar transistor IGBT) provided with an emitter main electrode and an emitter sense electrode, an integrated circuit having a detection terminal and a mold resin body that seals the semiconductor element and the integrated circuit, and a lead. The lead is provided with an inner lead part sealed in the mold resin body and electrically connected to the emitter sense electrode, an inner lead part sealed in the mold resin body and electrically connected to the emitter main electrode, and an outer lead part connected to the lead part on one side, connected to the inner lead part on the other side and exposed outside the mold resin body.

A probe apparatus includes a movable mounting table for holding a test object provided with a plurality of power devices including diodes; a probe card arranged above the mounting table with probes; a measuring unit for measuring electrical characteristics of the power devices by bringing the probes into electrical contact with the test object in a state that a conductive film electrode formed on at least a mounting surface of the mounting table is electrically connected to a conductive layer formed on a rear surface of the test object; and a conduction member for electrically interconnecting the conductive film electrode and the measuring unit when measuring the electrical characteristics. The conduction member is interposed between an outer peripheral portion of the probe card and an outer peripheral portion of the mounting table.

The invention provides an IGBT overcurrent detection method based on the active clamp feedback type. The method comprises the steps that the IGBT is disconnected and the voltage peak appears when overcurrent appears in the IGBT, and the active clamp circuit works to clamp the IGBT on the protection voltage when the voltage of the two ends of the IGBT exceeds the breakdown voltage of the active clamp diode; the detection circuit effectively extracts the time of TVS branch current flowing or the time of the clamp voltage in case of active clamp actuation and transmits the time signal to the processor circuit; the processor performs statistics of the time and the frequency of the signal transmitted by the detection circuit; and the judgment result indicates the overcurrent fault of the IGBT when the time signal of TVS branch current flowing or the time signal of the clamp voltage received by the processor circuit exceeds the system setting time. The invention also provides an IGBT overcurrent detection device based on the active clamp feedback type.

The invention discloses a T-type three-level converter power module double-pulse test circuit and a test method, comprising: a T-type three-level converter power module; two ends of a DC source connected in parallel with a discharge resistor and a bus capacitor; the bus capacitor It consists of two series-connected DC support capacitors, and the connection of the two series-connected DC support capacitors is connected to one end of two IGBT tubes with different directions; the first DC support capacitor and the two ends of the first DC support capacitor are connected in parallel with the first absorption capacitor and the second absorbing capacitor; a DC source switch is set at the positive end of the DC source, and a discharge branch switch is set at the positive end of the bleeder resistor. The air core inductor is connected to both ends of the first IGBT tube or the fourth IGBT tube. This test method can test various commutation conditions of the power module, device switching time, overvoltage absorption effect of the absorbing circuit and drive short-circuit protection, and provides an effective test method for the development of T-type three-level converters .

The present invention provides an IGBT aging state detection system. The system comprises a test power supply, a test IGBT, a variable driving circuit capable of outputting continuous changing current, a conduction drive circuit, a collection unit and an upper computer. The emitting electrode of the test IGBT is connected with the collector of an IGBT to be detected; the collector of the test IGBT is connected with the anode of the test power supply; the cathode of the test power supply is connected with the emitter electrode of the IGBT to be detected; the output end of the variable driving circuit is connected with the grid of the test IGBT; the output end of the conduction drive circuit is connected with the grid of the IGBT to be detected; the collection unit is configured to collect the pressure drop Vce between the collector and the emitting electrode of the IGBT to be detected and the collector current Ic and output the pressure drop Vce and the collector current Ic to the upper computer; and the pressure drop Vce between the collector and the emitting electrode of the IGBT to be detected is subjected to continuous changing measurement so as to accurately determine the aging state of the IGBT.

An assembly of electro-mechanical impedance tuner covering frequencies in the millimeterwave region (26-110 GHz) uses wafer probes to test chips on wafer with capacity of adjusting the probe tip planarity. The assembly uses flexible waveguide between the tuner test port and the wafer probe port and micrometer adjustment of the planarity angle Θ between the plan of the probe tips and the wafer surface in order to optimize RF and DC contact.

The invention relates to an IGBT short-circuit overcurrent detecting circuit. The circuit comprises a band-pass filter connected with the grid electrode of a first IGBT, a first comparator which is connected with the band-pass filter and used for receiving a first reference voltage, a T triggering device which is connected with the first comparator and used for outputting a first logical signal, asecond comparator which is connected with the grid electrode of the first IGBT and used for receiving a second reference voltage and outputting a second logical signal, an AND gate used for receivingthe first and second logical signals and outputting an hard-staring error detecting signal, a third comparator connected with the grid electrode of the first IGBT and used for receiving a third reference voltage and an RS triggering device connected with the third comparator and used for outputting a loading short-circuit error detecting signal. By means of the circuit, IGBT hard-starting error detection and IGBT loading short-circuit detection can be simultaneously achieved, the structure is simple and easy to implement, and the cost is saved.

An isolated insulated gate bipolar transistor (IGBT) gate driver is provided which integrates circuits, in-module, to support the measurements of threshold voltage, and collector-emitter saturation voltage of IGBTs. The measured gate threshold and collector-emitter saturation voltage can be used as precursors for state of health predictions for IGBTs. During the measurements, IGBTs are biased under specific conditions chosen to quickly elicit collector-emitter saturation and gate threshold information. Integrated analog-to-digital converter (ADC) circuits are used to convert measured analog signals to a digital format. The digitalized signals are transferred to a micro controller unit (MCU) for further processing through serial peripheral interface (SPI) circuits.

The present invention provides an inspection apparatus, which comprises probes for front side electrodes, probes for back side electrodes, and a chuck stage, wherein the probes for front side electrodes and the probes for back side electrodes are formed on the upper surface of the chuck stage, and the probe contact area electrically continues to the wafer holding area, and the probes for front side electrodes and the probes for back side electrodes are located leaving a distance in horizontal direction between them so that the probes for back side electrodes move relatively within the probe contact area when the probes for front side electrodes are moved relatively within the wafer under test by the movement of the chuck stage. According to the inspection apparatus of the present invention, it is possible to inspect characteristics of semiconductor devices having electrodes on both side of a wafer more accurately in wafer state.

A hybrid load pull tuner system uses a combination of a passive and active tuner system. A closed loop system means that the system is independent of the available power of the device under test (DUT). The proposed hybrid system is formed around a closed loop Gamma Boosting Unit (GBU) consisting of two back to back broadband directional couplers, broadband variable time-delay, broadband variable phase-shifter and a broadband microwave amplifier, all inserted in the coupled path of the couplers; the GBU is connected in cascade with a passive tuner and boosts its reflection factor; for this the amplifier must have enough linear power and gain to match the difference between the power reflected back to the DUT by the passive tuner and the desired total reflected power to reach the expected Gamma, considering coupling loss and insertion loss of the test fixture.

A life estimation circuit includes a temperature detector configured to detect temperature of a power element unit, an inflection point detection unit configured to detect an inflection point of temperature variation in the power element unit based on an output signal from the temperature detector, an operation unit configured to determine an absolute value of a difference between the temperature of the power element unit at an inflection point detected this time and the temperature of the power element unit at an inflection point detected last time, a count circuit configured to count the number of times that the absolute value of the difference in temperature has reached a threshold temperature, and a signal generation unit configured to output, when a count value from the count circuit reaches a threshold number of times, an alarm signal indicating that the power element is about to reach the end of its life.

The invention relates to an IGBT aging test circuit and method. The circuit comprises a first current source, a second current source, a forward and reverse flow guiding unit and a unit to be tested;the first current source provides an aging test current for the unit to be tested through the forward and reverse flow guiding unit; the forward and reverse flow guiding unit is used for adjusting thedirection of the aging test current flowing through the unit to be tested, so as to simulate the IGBT working state by the direction of the aging test current flowing through the unit to be tested; and the second current source provides a junction temperature test current for the unit to be tested, so as to test a saturation voltage of the unit to be tested under the junction temperature test current, and aging test is carried out on an IGBT through the saturation voltage. According to the IGBT aging test circuit provided by the invention, the aging test of the IGBT is completed by the agingtest circuit, and the service life of the IGBT is evaluated and predicted online, which can effectively monitor the working state of the IGBT, replace the IGBT that is about to be damaged in advance,and ensure the safe operation of a railway train.