Method for constructing state evaluation and remaining life prediction model of IGBT module

A life prediction model and state evaluation technology, applied in bipolar transistor testing, single semiconductor device testing, etc., can solve the problems of high cost, large accuracy fluctuations, and difficult implementation, so as to improve conversion efficiency, increase application range, Versatile effect

Active Publication Date: 2019-01-11
HEBEI UNIV OF TECH
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Problems solved by technology

The main parameter of the analytical model analysis method is the junction temperature, and the device is predicted according to the variation range and average value of the junction temperature. However, when this method extracts the junction temperature, its accuracy fluctuates greatly, and the temperature cycle of the device Higher extraction requirements
The physical model analysis method mainly uses the experimental method. This method requires high precision of the experimental equipment and is expensive. It also needs to understand the internal structure of the IGBT module and the characteristics of the material, as well as the mechanical effects caused by the different thermal expansion coefficients between various materials. , it is more difficult to implement

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  • Method for constructing state evaluation and remaining life prediction model of IGBT module
  • Method for constructing state evaluation and remaining life prediction model of IGBT module
  • Method for constructing state evaluation and remaining life prediction model of IGBT module

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Embodiment Construction

[0043] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

[0044] The present invention provides a state evaluation and remaining life prediction model that comprehensively considers the electrical and thermal parameters of an IGBT module. By measuring the saturation voltage drop and junction-to-shell thermal resistance of the IGBT, the average junction-to-shell thermal resistance change rate-average power cycle number is established. and the average saturation pressure drop rate of change - the average number of power cycles The function model is used to evaluate the aging state of the module, and express the aging state of the IGBT as a real number in the interval [0,1], and evaluate the reliability of the evaluation result of the aging state, and finally establish the remaining life of the IGBT module. Computational model. The above state evaluation and remaining life prediction model can make ...

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Abstract

The invention relates to a method for constructing a state evaluation and remaining life prediction model of an IGBT module. The method comprises the following steps: measuring electric heating parameters of the IGBT module under different aging degrees through testing; establishing a functional model of average crust thermal resistance change rate-average power cycle index and a functional modelof average saturation pressure drop change rate-average power cycle index of test samples of the IGBT module; evaluating the aging state of the IGBT module according to the above functional models, and expressing the aging state of the IGBT by a real number on the interval [0, 1] to obtain a state evaluation result; and establishing a calculation model of the remaining life of the IGBT module according to the state evaluation result. The method provided by the invention establishes mathematical models of electrical parameters, thermal parameters and power cycle indexes according to a power cycle accelerated aging test, and the models comprehensively consider the influence of electrical parameters and thermal parameters on the evaluation results to make up for the deficiency of single parameter evaluation, thereby accurately obtaining the aging state of the IGBT module under the condition of thermal resistance and saturation voltage drop of a certain crust.

Description

technical field [0001] The invention belongs to the technical field of power electronic devices, in particular to a method for constructing a state evaluation and remaining life prediction model of an IGBT module. Background technique [0002] IGBT power modules are the core power devices in the fields of railways, new energy and automobiles, and their safe and reliable operation is the basis for ensuring the sustainable and stable development of all walks of life. However, because the IGBT power module is relatively fragile, it is important to study its state assessment and remaining life estimation methods for the reliability of its equipment. Since the junction-to-shell thermal resistance of the IGBT power module can express the fatigue degree of the solder layer, and the saturation voltage drop can express the aging degree of the IGBT bonding wire, the above parameters are used to characterize the aging state of the IGBT power module and whether the system in which it is...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2608
Inventor 李玲玲齐福东李志刚刘伯颖罗泽峰张丝嘉
Owner HEBEI UNIV OF TECH
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