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IGBT remaining service life prediction method based on GARCH model

A life prediction and model technology, applied in special data processing applications, instruments, design optimization/simulation, etc., can solve the problem of not considering the individual differences of IGBT modules

Pending Publication Date: 2022-01-11
WUHAN UNIV +3
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Problems solved by technology

[0007] The purpose of the present invention is to overcome the shortcomings of the IGBT life prediction method in the prior art that do not consider actual working conditions and individual differences in IGBT modules, and propose a GARCH model-based IGBT remaining service life prediction method to solve the problem of IGBT modules in Prediction of the remaining service life of a single individual in practical applications

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  • IGBT remaining service life prediction method based on GARCH model
  • IGBT remaining service life prediction method based on GARCH model
  • IGBT remaining service life prediction method based on GARCH model

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[0037] The method for predicting the remaining service life of an IGBT based on the GARCH model of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should be pointed out that the embodiments and examples of the present invention are preferred solutions for the purpose of explanation, and are not intended to limit the scope of the present invention.

[0038] The present invention proposes a method for predicting the remaining service life of an IGBT based on the GARCH model. The main purpose is to propose a method for predicting the remaining service life of an IGBT module. By analyzing the relationship between the collector-emitter on-state voltage drop and the fatigue aging of the IGBT, the method utilizes The least squares method establishes the initial aging model, and then performs a stationarity test on the noise sequence, and then establishes an IGBT aging model based on the GARCH model, evaluates the IGBT aging ...

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Abstract

The invention provides an IGBT remaining service life prediction method based on a GARCH model. The method is characterized in that the relationship between collector-emitter on-state voltage drop and IGBT fatigue aging is analyzed, an initial aging model is established by using a least square method, then a stability test is further performed on a noise sequence, and an IGBT aging model based on a GARCH model is established, so as to evaluate aging states of the IGBT, and improve the precision of IGBT life prediction. According to the invention, the influence caused by individual differences and actual working conditions due to the specific production process of the IGBT is solved; according to a power cycle accelerated aging test, a mathematical model, of collector-emitter on-state voltage drop V<CE, on> and power cycle times, is established, so that an aging state of a single IGBT module can be accurately obtained.

Description

technical field [0001] The invention belongs to the technical field of power electronics reliability, in particular to a method for predicting the remaining service life of an IGBT based on a GARCH model. Background technique [0002] Insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT), as a power semiconductor device with high power density, high electrical switching frequency, high energy efficiency and low cost, is widely used in wind power and other new energy grid connection, power transmission, rail transit , Aerospace and other fields have been widely used. Statistics show that the number of IGBTs in power semiconductor devices accounts for as high as 42%. Therefore, the reliability of IGBT has become an important factor for the safe operation of power electronic systems. The failure of the IGBT module will have a huge impact on the normal operation of the entire power system, and even cause the system to crash in severe cases. In order to e...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20G06F119/02G06F119/04
CPCG06F30/20G06F2119/02G06F2119/04
Inventor 白梁军汪涛周扬黄萌张茂强文继锋卢宇李响
Owner WUHAN UNIV
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