144 results about "Igbt power modules" patented technology

The invention belongs to the technical field of power electronic device measurement and particularly relates to a device and a method for dynamic characteristic measurement of an IGBT. The device mainly comprises a voltage regulator, a transformer, a rectifier bridge, a bus capacitor, a discharge resistor, a first relay, a second relay, a main control panel, an auxiliary control panel, a protection circuit, an IGBT power module, a load inductor, a current sensor, a shielding box and an oscilloscope. Firstly, the first relay is switched on, the second relay is disconnected, the voltage regulator is zeroed after being adjusted to be at the voltage to be detected, and the first relay is disconnected; secondly, electrification is implemented, and the oscilloscope obtains a dual-pulse signal, IGBT two-end voltages and collector electrode current waveforms. The crosstalk of different signals, interference of a space magnetic field on measured signals and other factors are excluded, high-accuracy dynamic process waveforms can be obtained, and the device and the method have good reproducibility on delay and overshoot of voltage and current signals. The load inductor with a tap enables the circuit to be adjustable, and the device and the method can be used for measurement of different devices.

The present invention relates to a current transformer IGBT power module field double-pulse testing system and a method. The testing system comprises a double-pulse testing circuit which comprises a double-pulse testing circuit which comprises an input power supply (1), a current transformer and a load which are connected in order, a detection unit which is used for detecting the relevant parameters of each IGBT in the IGBT power module (3) in the current transformer, a data acquisition unit which is connected to the detection unit and is used for collecting the measured relevant parameters of the IGBT, and a data processing unit which is connected to the data acquisition unit and is used for carrying out analyzing processing on the measured relevant parameters of the IGBT. The testing method comprises the steps of (1) constructing a double-pulse testing circuit, (2) carrying out data measurement to measure the switch parameter of each IGBT in the IGBT power module (3) in the current transformer, and (3) carrying out data processing to carrying out analyzing processing on the measured switch parameter of the IGBT. Compared with the prior art, the system and the method have the advantages of accurate measurement and convenient measurement and are suitable for field measurement.

A method for estimating the junction temperature on-line on an insulated gate bipolar transistor (IGBT) power module, including the following steps. Estimate the junction temperature by the temperature sensitive electrical parameter method, set the space thermal model of the extended state, and apply the Kalman filter to the junction temperature estimation. The temperature sensitive electrical parameter method estimates the junction temperature of the IGBT power module in real time, selects the IGBT conduction voltage drop V_CE(ON) as the temperature sensitive electrical parameter, and provides a V_CE(ON) on-line measuring circuit. The power loss of the diode and IGBT and the estimated value of junction temperature obtained by the temperature sensitive electrical parameter method are taken as the input of the Kalman filter, and measurement noise and process noise are considered to obtain an optimal estimated value of junction temperature.

The present invention provides an on-line detection device for measuring the junction temperature of an IGBT power module based on saturation voltage drop. According to the device, the voltages VCE of a collector and an emitter under small current are selected as temperature sensitive parameters. The detection device comprises a temperature box experimental unit. A function relationship between saturation voltage drop VCE and junction temperature Tj under the small current is determined; the switching off of high current is controlled through a switch IGBT module under a power cyclic condition; the change of the VCE at the moment when an IGBT to be detected is switched off is monitored; and the change of the VCE is introduced into the function relationship which is obtained in advance, and the change process of the junction temperature Tj can be obtained. With the device adopted, the junction temperature of the IGBT can be detected in real time. According to the device, an overcurrent unit and an overtemperature unit are additionally adopted, and therefore, the IGBT device can be protected in real time through an automatic power-off means, and therefore, the device of the present invention can obtain the junction temperature of the IGBT more simply and quickly than devices which obtain junction temperature through opening covers or changing circuit structures.

The invention discloses an insulated gate bipolar transistor (IGBT) intelligent driving module for a new energy automobile. The IGBT intelligent driving module comprises a controller ECU, a vehicle-mounted controller, an IGBT power module, an IGBT driving circuit and a driving power supply, wherein an output end of the controller ECU is connected with an input end of the vehicle-mounted controller; the output end of the vehicle-mounted controller is connected with the IGBT power module through the IGBT driving circuit; the IGBT power module is connected with the input end of the controller ECU; the IGBT driving circuit is connected with the controller ECU; and the control method thereof comprises the steps of detecting bus voltage, detecting driving voltage and detecting module temperature. The module and the method have the advantages that: 1, a singlechip is introduced to serve as a substituent for a digital AD converting circuit, and the cost of the driving module is reduced by means of the characteristics of simplicity, convenience and a plurality of interfaces; and 2, the temperature signal of the power module can be conveniently acquired, and meanwhile, the sampling of the driving voltage is realized and the system is simplified.

The invention discloses an IGBT module junction temperature online estimation circuit system and method, and the method comprises the following steps: 1, carrying out the online measurement of the IGBT on-state voltage drop VCE(ON) of an IGBT power module, and building an IGBT junction temperature Tj lookup table; 2, calculating the power loss of an IGBT and a diode in the IGBT power module; 3, periodically and timely updating the IGBT equivalent thermal network model by adopting a thermal network updating strategy considering the fatigue accumulation effect of the solder layer; 4, establishing a state space model by taking the junction temperature Tj and the IGBT and diode power loss as state variables according to the IGBT equivalent thermal network model, and updating the state space model; and 5, designing an adaptive Kalman filtering algorithm program according to the state space model to obtain an IGBT junction temperature Tj estimated value. The method integrates the advantagesof model estimation and online measurement, overcomes the defect that on-state voltage drop VCE (ON) measurement is inaccurate, keeps signal continuity, reduces noise interference, is high in estimation precision, and can estimate the IGBT module junction temperature in real time in a non-intervention mode.

The invention relates to the technical field of temperature detection, specifically to a temperature calibrating apparatus for an IGBT power module chip and a temperature correction method thereof. The temperature calibrating apparatus comprises an IGBT power module including an IGBT chip, a diode chip, an NTC and a heat radiation substrate, wherein temperature sensors are arranged on the lower ends of the IGBT chip and the diode chip, and the IGBT power module is respectively connected with a load, a driver and a data acquisition instrument. The driver and the data acquisition instrument are respectively connected with a host computer, and the driver is connected with a power supply. The acquired temperature is compared with the temperature measured by NTC, temperature correction curves MAP for the IGBT chip and the diode chip are formed based on NTC temperature. Operation junction temperature of the IGBT chip and the diode chip is monitored by checking a table by using real-time monitored NTC temperature and calibrated temperature MAP. Rapid, accurate and real-time operation junction temperature detection can be achieved without consuming calculating resources of a driving system.

The invention relates to a high-voltage current transformer, in particular to a driving circuit of the high-voltage current transformer. Thanks to the invention, the problem that at present no well-developed driving circuit is provided for high-voltage current transformers can be solved. The driving circuit of the high-voltage current transformer comprises a driving circuit, a power circuit and a protecting circuit. Apart from the self characteristics of the circuits, the driving circuit of the high-voltage current transformer is substantially characterized in that fiber optic transmitters and fiber optic receivers are used in the driving circuit and the protecting circuit; a high-voltage isolating chip is used in the power circuit; therefore the high-voltage isolation of the driving circuit of the high-voltage current transformer from other circuits is effectively realized, and the other circuits connected with the driving circuit are effectively protected against being possibly damaged by the high voltage and the large current, which flow past a high-voltage IGBT in the high-voltage current transformer, through the driving circuit. The driving circuit can achieve 10 kV of electric isolation, feed back the voltage status of a main loop and protect the safe performance of an IGBT power module. The driving circuit is successfully assembled in a four quadrant and an inversion module of a motor train unit.

The invention discloses a load controller and an electromobile with the load controller. The load controller comprises a casing, a busbar module, a capacitor, an IGBT power module, a heat radiation module, a driving circuit board and a control circuit board; the busbar module comprises a DC busbar and an AC busbar connected to a load; the capacitor is connected with an external DC power supply andthe DC busbar; the input end of each IGBT is connected with the DC busbar, and the output end of each IGBT is connected with the AC busbar; the heat radiation module comprises radiating fins, each IGBT in the same column is clamped between two adjacent radiating fins; the driving circuit board is electrically connected with each IGBT; the control circuit board is connected with the driving circuit board; and the busbar module, the IGBT power module, the heat radiation module, the driving circuit board and the control circuit board are mounted on the casing; According to the load controller ofthe invention, the heat radiation efficiency is high, the heat radiation effect is good, and the size is small.

The invention discloses a converter power cabinet. A sealed cooling system comprises an IGBT power module, a fan, a reactor, an air damper and a cabinet body. the power cabinet is divided into an upper independent cooling air duct and a lower independent cooling air duct, the upper part is a power module cooling air duct 100, the lower part is a reactor cooling air duct 200, the two air ducts are isolated mutually, mutual influences are avoided, the air duct length can be reduced as two independent air ducts are divided, pressure losses of the fan are reduced, and the cooling efficiency is improved.

The invention relates to a passive rectification protection system of an electric vehicle motor controller. The passive rectification protection system comprises a motor controller, wherein the motor controller comprises an IGBT (Insulated Gate Bipolar Transistor) power module which is internally provided with a high-speed diode, an IGBT protection circuit module, an IGBT drive module and a DSP (Digital Signal Processor) control module, a current sensor and an electronic switching device are arranged on any two phases in a three-phase cable between the IGBT power module and a drive motor in a serial connection way, the current sensor is used for transferring a current signal to the DSP control module, and meanwhile, the DSP control module outputs a level signal for controlling on-off of the electronic switching device. With the adoption of the passive rectification protection system, the problem that the traditional electric vehicle motor controller is easy to damage in the state of passive rectification of a whole vehicle is solved, thus improving the using reliability of the motor controller; and the passive rectification protection system can be widely applied to the field of the electric vehicle motor controllers.

The invention relates to a method for calculating the dynamic junction temperature of an IGBT power module of a wind power converter considering the influence of stray inductance, The invention belongs to the technical field of high-power power electronic device reliability for new energy power generation. The method comprises the following steps: S1, establishing an equivalent circuit model of anIGBT module according to the dynamic uneven current between parallel multi-chips caused by stray inductors; S2: deriving The mathematical relationship between the stray inductance parameters and theswitching-on loss; S3: Introducing the equivalent thermal coupling impedance to establish the thermal network model considering the thermal coupling between chips; 4, establishing a dynamic junction temperature calculation model of that IGBT module, feeding the junction temperature distribution result back to a mathematical relation model of los, and iteratively obtaining the dynamic junction temperature distribution among chips in the IGBT module. The invention can accurately reflect the dynamic heat distribution inside the IGBT power module, effectively characterize the heat weak links inside the module, and improve the heat management control strategy of the wind power converter, thereby improving the reliability thereof.

The invention provides high-strength IGBT high-power module encapsulation silica gel and an encapsulation process thereof. The encapsulation gel is high in strength, can resist outside impact, is excellent in weather resistance and has high compatibility and adhesion strength with an IGBT power module. An effect of protecting and insulating the IGBT power module is effectively achieved. The encapsulation requirement of the high-power high-frequency high-voltage large-current IGBT power module is met. The silica gel provided by the invention is a two-component heating and curing adhesive and is prepared by mixing a component A and a component B according to a ratio of 1:1.

The invention relates to a high-voltage converter, in particular to a simplified driving circuit of the high-voltage converter, aiming at solving the problem of the driving circuit of the existing immature high-voltage converter. The simplified driving circuit comprises the driving circuit, a power supply circuit and a protective circuit; besides, the structure of the function circuits of the simplified driving circuit of the high-voltage converter has the self characteristics, the simplified driving circuit is essentially characterized in that an optical fiber emitter and an optical fiber receiver are respectively adopted in the driving circuit and the protective circuit, and a driving chip U13 with the functions of power supply output and high voltage isolation is selected for use, so that the high voltage isolation between the simplified driving circuit of the high-voltage converter and other circuits can be effectively realized, and the high voltage and heavy current of a high voltage IGBT flowing through the high-voltage converter is effectively prevented from damaging other circuit connected with the simplified driving circuit. The electrical isolation can reach 10kV; the voltage state of a main loop can be feedback, and an IGBT power module can be protected to run safely; furthermore, at present, the driving circuit can be successfully assembled on four quadrants and an inverter module of a motor train unit.

This invention relates to a mid-power low voltage frequency converter based on an insulation grid dual polarity transistor including: a mean-voltage resistor, a DC capacitor, an absorption capacitor, a cascade bus, a cascade bus insulation board, an IGBT power module, an input power terminal, a redtifying diode, an output power terminal, a radiator, a fan, a wheel and a current sensor, which is advantaged that the structure is compact, the volume is small, power density is big and easy to be installed.

The invention discloses an IGBT power module structure. The IGBT power module structure includes an IGBT module set, an IGBT driving board, a radiator of the IGBT module set, direct-current bus-bars connected with IGBT modules, and alternating-current copper bars connected in parallel with the IGBT modules, wherein the IGBT modules are arranged at two sides of the radiator. According to the IGBT power module structure, the stray inductance of the IGBT modules can be decreased, the turn-off overvoltage of the IGBT modules can be decreased; the IGBT modules can be arranged at the two sides of the radiator, so that the structure of the IGBT power module structure is more compact, and the power density of the IGBT power module structure can be improved; and the paths of the alternating-current copper bars are the same, so that the current equalization performance of IGBTs can be better, and reliability is higher.

The invention relates to a method for identifying the abnormal health state of an IGBT power module of a wind power converter, and belongs to the technical field of wind turbine generator state monitoring. The method comprises three parts including a wind power converter monitoring data extraction part, an IGBT temperature prediction part, and a residual analysis and abnormal result identificationpart. On the basis of extracting historical operation data of various physical characteristic quantities such as active power and IGBT temperature in a wind turbine generator SCADA system, the activepower is taken as an interval division basis, and the interval division of the historical operation data of the various physical characteristic quantities is realized by utilizing a bin method, so that a process memory matrix is formed; the various extracted physical characteristic quantities are taken as observation vectors, and a nonlinear state estimation method is adopted to realize prediction of the IGBT temperature; and the actual monitoring value of the IGBT temperature is combined with the predicted value to obtain a residual error, and when the residual error value exceeds a threshold value, an abnormal result is given.

The invention discloses an IGBT (Insulated Gate Bipolar Transistor) power module specific to an electromobile. The IGBT power module comprises an IGBT chip, a diode chip, an insulating ceramic substrate, a power terminal, a signal terminal plastic shell and a liquid-cooling heat radiator, and is characterized in that metal layers at two sides of the insulating ceramic substrate are copper material layers or aluminum material layers, the surfaces of the metal layers are alternatively plated with nickel materials; the IGBT chip and the diode chip are sintered and welded on the insulating ceramic substrate through silver paste; and the power terminal and the signal terminal are ultrasonically welded on the metal layers of the insulating ceramic substrate. The IGBT power module disclosed by the invention is suitable for electromotor controllers of electromoibles.