106 results about "Igbt power modules" patented technology

The invention discloses a self-adaptive nanosecond driving protection method for a high-voltage IGBT power module. The method comprises the steps that data such as high-voltage side voltage, collector current, grid voltage and junction temperature are collected and preprocessed, and standardized feature vectors are obtained; extracting statistical features, frequency domain features and trend features to obtain a comprehensive feature vector; density clustering is carried out based on historical fault data, and an extreme value model is established by using generalized Pareto distribution to generate an optimized threshold value; constructing a time sequence feature matrix, predicting a fault probability by adopting a time sequence convolutional network and a long-short term memory network, and generating a protection strategy parameter; and generating an optimal driving waveform and a control signal, and updating parameters according to an actual response effect. According to the invention, predictive protection and nanosecond-level precise control of faults are realized, and the reliability and performance of the high-voltage IGBT module are remarkably improved.

The invention provides an intelligent temperature field analysis-based heat dissipation optimization method for an IGBT (Insulated Gate Bipolar Translator) power module of an offshore flexible direct current converter valve. According to the method, an IGBT module space temperature data matrix and multi-point temperature sensor data are collected, and filtering processing is carried out through a multi-scale sliding window and a self-adaptive threshold value; establishing a multi-layer thermal network parameter model, and analyzing temperature dynamic change characteristics; layering the feature data according to the thermal response speed, and performing adaptive mapping and weight calculation; establishing a reinforcement learning model based on the heat dissipation efficiency index set to optimize a heat dissipation strategy; and predicting the temperature field distribution by using the graph structure neural network model. Accurate sensing, dynamic characteristic analysis, self-adaptive control and predictive maintenance of the temperature field of the IGBT module are realized, the heat dissipation efficiency and the temperature uniformity are improved, and the service life of equipment is prolonged.

The invention discloses an automatic double-pulse test system and method, and the system comprises an upper computer unit, a controller unit, a capacitor charging and discharging loop unit, a load inductance unit, an IGBT power unit, and an oscilloscope unit, the upper computer unit is connected with the controller unit, the controller unit is connected with the IGBT power unit, and the oscilloscope unit is connected with the capacitor charging and discharging loop unit. The control end of the controller unit is connected with the input ends of the capacitor charging and discharging loop unit and the load inductance unit, and the output ends of the load inductance unit, the capacitor charging and discharging loop unit and the oscilloscope unit are respectively connected with the IGBT power unit. The whole operation process can be realized through an upper computer. Full-automatic control and electrical isolation of the whole double-pulse test loop are realized through the controller, so that the test safety is effectively guaranteed; the turn-on and turn-off resistors driven by the IGBT can be adjusted on line, the operation is convenient, and the test efficiency is greatly improved; most IGBT double-pulse test scenes can be met, and the IGBT power module and the capacitor module can be directly and quickly connected with the system for testing.

The invention provides an IGBT junction temperature prediction model construction method and system, and relates to the technical field of power electronic device thermal management, and the method comprises the steps: obtaining an initial data set representing the transient thermal response relation between an IGBT chip and an NTC temperature measurement point in an IGBT power module where the IGBT chip is located; training a neural network model based on the initial data set, and learning and representing a nonlinear function relationship between time and thermal impedance; inputting a preset new time sequence into the trained neural network model, and generating a time-continuous and noise-suppressed optimized thermal impedance data set; and based on the data set, performing parameter fitting on a preset lumped parameter thermal network model to identify thermal resistance and thermal capacity parameters of the model so as to complete construction of the junction temperature prediction model. According to the method, the neural network is used as a data optimization tool in a physical model parameter identification process, and accurate and convenient online prediction of the IGBT junction temperature is realized only by using the temperature signal of the NTC temperature measurement point of the module.

The invention belongs to the technical field of power electronics, and provides a portable IGBT power assembly detection device and method, and the device comprises a portable box body, and an adjustable DC power supply, a main control unit, a drive switching unit and an upper computer which are disposed in the portable box body. The adjustable direct-current power supply is used for supplying power to the tested IGBT power assembly; the main control unit is used for generating and sending a PWM driving signal to a tested IGBT power assembly, and obtaining key electrical parameters and temperature data of the tested IGBT power assembly through driving the switching unit. And after a fault signal reported by the detected IGBT power assembly through the driving switching unit is received, the key electrical parameters and / or the temperature data are / is detected to be abnormal, or a control instruction sent by the upper computer is received, the main control unit stops generating the PWM driving signal, and the main control unit is further used for uploading the key electrical parameters, the temperature data and the fault signal to the upper computer. The device is small in size and convenient to carry, and the operation convenience is remarkably improved.

The invention provides a packaging structure and a packaging method for improving the heat dissipation performance of an IGBT power module. The packaging structure comprises a copper substrate, a first epoxy glue layer, an epoxy resin-based composite material layer, a second epoxy glue layer, an upper bridge copper layer, a lower bridge copper layer, a chip solder layer and a power chip which are sequentially arranged from bottom to top, wherein the upper bridge copper layer and the lower bridge copper layer are integrally arranged; the power chip comprises an upper bridge chip and a lower bridge chip; the chip solder layer comprises an upper bridge chip solder layer and a lower bridge chip solder layer; the upper bridge chip solder layer is arranged on the upper bridge copper layer, and the upper bridge chip is arranged on the upper bridge chip solder layer; the lower bridge chip solder layer is arranged on the lower bridge copper layer, and the lower bridge chip is arranged on the lower bridge chip solder layer. According to the packaging structure, the epoxy resin-based composite material layer is adopted as the insulating layer, copper and a welding layer are reduced in heat flow transmission, the heat resistance from the chip to the shell is reduced, and the heat dissipation performance is improved; the copper layers of the upper and lower bridge arms are integrated, leads between the upper and lower bridges are reduced, the power loss of the IGBT is reduced, and the heat is reduced.

Provided is a power conversion device on which an IGBT power module that includes a main IGBT and a current sense IGBT in the same semiconductor chip is mounted, wherein the power conversion device is a high-performance and highly reliable power conversion device capable of accurately estimating a main current flowing through the main IGBT using a sense current in an entire operation region of the power conversion device. A power conversion device includes: a first IGBT through which a main current flows; a second IGBT which is disposed on the same semiconductor substrate as the first IGBT and through which a sense current flows; and a measurement device which calculates the main current based on the sense current, wherein the measurement device selects a method of calculating the main current corresponding to a current value of the sense current.

The invention discloses an active power filter residual life evaluation method, system and device, a medium and a product, and the method comprises the steps: constructing a failure degradation model of a DC side capacitor of an active power filter and a failure degradation model of an IGBT power module through a Wiener process; determining an edge cumulative distribution function of the direct-current side capacitor and an edge cumulative distribution function of the IGBT power module, coupling the edge cumulative distribution function of the direct-current side capacitor and the edge cumulative distribution function of the IGBT power module by using a Copula function, and based on a joint degradation probability distribution model, performing Monte Carlo simulation to obtain a degradation probability distribution model. According to the method, the degradation tracks of the direct current side capacitor and the IGBT power module from the starting moment to the future moment are simulated, and when any one degradation track passes through the failure threshold value, the latest moment is determined as the degradation moment, so that the residual life estimation value of the active power filter is determined, and the precision of residual life estimation is improved.

The invention discloses an IGBT power module and an energy storage converter. The power module comprises a first module unit, a second module unit, a third module unit and a busbar board, each of the three module units comprises a cooling plate and an IGBT device group at least located on the surface of one side of the cooling plate, and the first module unit and the second module unit are electrically connected with the third module unit; the first cooling plate of the first module unit and the second cooling plate of the second module unit are arranged in parallel along a first direction; the third cooling plate of the third module unit is at least partially located on one side of the first cooling plate and the second cooling plate in the thickness direction. The IGBT power module is compact in arrangement, compact in structure and good in heat dissipation effect, and space occupation and stray resistance are reduced.

The application discloses a method for preparing an indium-based soft soldering sheet by vacuum hot pressing, belongs to the technical field of thermal interface materials for chip packaging and IGBT power module welding material preparation, and is characterized in that pure indium powder or indium-tin mixed alloy powder is uniformly laid in a graphite mold, the graphite mold is vibrated or knocked, and the pure indium powder or indium-tin mixed alloy powder is laid flat and densely; the graphite mold is fixed in a vacuum hot pressing machine, a pressure of 10 MPa is applied to the vacuum hot pressing machine, vacuum is drawn to 1*10 ‑3 Pa, a temperature rising rate is controlled to be less than 5 DEG C / min, when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, a pressure maintaining state is kept for 0.5-1 hours, then the mold is cooled to room temperature along with the furnace, the mold is taken out, and a pure indium soldering sheet or an indium-tin-based multi-element alloy soldering sheet is obtained. The method has simple process and low energy consumption, and the performance of the prepared soft thin soldering sheet is obviously improved.

The application provides a kind of IGBT junction temperature prediction model construction method and system, it is related to power electronic device thermal management technical field, method includes: obtaining the initial data set of the transient thermal response relationship between the IGBT chip and the NTC temperature measuring point in the IGBT power module;Based on the initial data set, the neural network model is trained, and the nonlinear function relationship between time and thermal impedance is learned and characterized;The preset new time series is input into the trained neural network model, and the optimized thermal impedance data set with continuous time and noise suppression is generated;Based on the data set, the lumped parameter thermal network model is parameter fitted, to identify its thermal resistance and heat capacity parameters, complete the construction of junction temperature prediction model.The application uses neural network as a data optimization tool in the parameter identification process of physical model, only uses the temperature signal of NTC temperature measuring point provided by the module, realizes the accurate, convenient online prediction of IGBT junction temperature.

The invention provides a synchronous control system for multiple wind power converters, and the system comprises a plurality of sub-controller modules which are all used for collecting the temperature information and driving waveforms of the corresponding wind power converters, and carrying out the threshold judgment of the temperature information; the main controller module is used for judging whether the wind power converter breaks down or not, and when the wind power converter breaks down, a cooling instruction corresponding to the wind power converter is generated; the cooling module is used for controlling a cooling system of the wind power converter to start based on the cooling instruction; the main controller module is used for generating pulse width modulation information corresponding to the wind power converter when the wind power converter breaks down, and then sending the pulse width modulation information to the sub-controller module corresponding to the wind power converter; and the N sub-controller modules are also used for controlling an IGBT power module in the wind power converter to act based on the pulse width modulation information. According to the technical scheme provided by the invention, the operation reliability and control speed of the multiple wind power converters are improved.

The invention discloses an IGBT power module automatic glue filling line and method thereof, comprising an ion dust removal feeding mechanism, a glue filling and curing mechanism, an upper cover assembly mechanism, a product offline mechanism and a tray recovery mechanism; the ion dust removal feeding mechanism comprises a cleaning device, a transport shaft mechanism and a discharging belt, the cleaning device is connected to one end port of the discharging belt of the ion dust removal feeding mechanism and the transport shaft mechanism, the glue filling and curing mechanism is connected to the other end port of the discharging belt, the glue filling and curing mechanism is connected to the upper cover assembly mechanism, the other side of the upper cover assembly mechanism is connected to the product offline mechanism, and the tray recovery mechanism is connected to the product offline mechanism to the discharging belt of the ion dust removal feeding mechanism, so as to further integrate the original automatic process, ensure that the entire assembly line occupies less resources, has high work efficiency, low labor cost, has good detection and dust removal procedures, ensures the safety and quality of the finished products, reduces the product void rate, and maximizes the utilization of resources and materials.

A method for preparing an indium-based soft soldering lug through vacuum hot press molding belongs to the technical field of preparation of thermal interface materials for chip packaging and IGBT (insulated gate bipolar transistor) power module welding materials, and comprises the following steps: uniformly paving pure indium powder or indium-tin mixed alloy powder in a graphite mold, and vibrating or knocking the graphite mold to make the pure indium powder or the indium-tin mixed alloy powder flatly and compactly paved; fixing the graphite mold in a vacuum hot press, applying a pressure of 10 MPa to the vacuum hot press, vacuumizing to 1 * 10 <-3 > Pa, and controlling the heating rate within 5 DEG C / min; and when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, keeping a pressurized state and preserving heat for 0.5-1 hour, then cooling the mold to room temperature along with the furnace, and taking out the mold to obtain the pure indium soldering lug or the indium-tin-based multi-component alloy soldering lug. The method is simple in process and low in energy consumption, and the performance of the prepared soft thin soldering lug is remarkably improved.

The utility model provides a silicon carbide and silicon hybrid parallel power module, comprising an IGBT power module group, the IGBT power module group comprises at least one IGBT power module, and the IGBT power module is provided with a DC + terminal, a DC-terminal and an AC terminal; a SiC power module group, the SiC power module group comprising at least one SiC power module, the SiC power module having a DC + terminal, a DC-terminal, a power AC terminal, and a parallel AC terminal; the DC + copper bar is connected with the DC + terminal of each IGBT power module and the DC + terminal of each SiC power module at the same time; the DC-copper bar is connected with the DC-terminal of each IGBT power module and the DC-terminal of each SiC power module at the same time; the power AC copper bar is connected with the AC terminal of each IGBT power module and the power AC terminal of each SiC power module at the same time; and the parallel AC copper bar is connected with the parallel AC terminal of each SiC power module at the same time. According to the utility model, the problem that the existing power module is not satisfactory in comprehensive performance of loss and cost can be solved.

The invention relates to a manufacturing method of a permanent magnet power generator of a pure electric vehicle, which creatively fills up the following functions: (1) a technology which is equivalent to a secondary commercial power 220V / 50Hz alternating current power supply energy-to-electricity technology; the function (2) is equivalent to a secondary energy structure electronic power technology power engine'electricity-to-energy and electricity-to-electricity 'technology; the function (3) is equivalent to an energy-to-energy technology of a permanent magnet power automobile generator in a secondary energy structure electronic power technology, a DC power supply conversion technology of a DC / DC converter in energy recovery of an energy storage system, an inversion IGBT power module conversion control technology of a DC / AC converter, an electronic rectification technology of a silicon controlled rectifier charger, a DC filtering technology and a switching power supply technology. The invention relates to a technology blank of'energy-to-electricity and electricity-to-energy 'technologies converted by a silicon controlled rectifier control technology and a silicon controlled rectifier capacitive reactance load technology, new energy, new structures, new ideas, new methods and new technologies.

The utility model discloses a power module used for an energy storage inverter, comprising a sheet metal rack, the sheet metal rack is a square frame body, one side surface of the sheet metal rack is provided with a radiator, the radiator is respectively provided with an IGBT power module, a heating resistor, a temperature control switch and a voltage-sharing resistor, and the IGBT power module is respectively connected with a laminated bus, an AC output copper bar and a driving board. According to the utility model, the structure is compact, different severe environments can be adapted under the condition of ensuring high power, and the power density is improved, the load of a single IGBT is reduced and the service life of the IGBT is prolonged through the use of three parallel IGBTs; the voltage equalization of the small laminated busbar is realized through the voltage equalizing resistor, and the anti-interference capability of the small laminated busbar is enhanced; through a temperature control switch and a heating resistor, the functions of moisture-proof heating dehumidification, low-temperature starting heating and the like are achieved; through the low-inductance design of the laminated busbar, the IGBT voltage spike is reduced, and the operation reliability of the device is improved.

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) power module and power equipment with the same. The IGBT power module comprises a chip; the lining plate is attached to the chip, and a high-temperature solder layer is arranged between the chip and the lining plate; the substrate is arranged on the side, away from the chip, of the lining plate, a low-temperature solder layer is arranged between the lining plate and the substrate, the melting point of the high-temperature solder layer is larger than that of the low-temperature solder layer, and the high-temperature solder layer and the low-temperature solder layer are made of lead-free solder. According to the IGBT power module provided by the utility model, the high-temperature solder layer and the low-temperature solder layer which are different in melting point and free of lead are adopted, so that when the substrate and the lining plate are welded, the welded high-temperature solder layer between the chip and the lining plate cannot be preheated and melted again, the quality and the yield of the IGBT power module are improved, and the production cost is reduced. And meanwhile, the low-temperature solder layer and the high-temperature solder layer do not generate toxic gas in the heating process, so that the harm to human bodies and the environment is avoided.

The invention discloses a current-sharing copper bar structure and an IGBT power module, the current-sharing copper bar structure comprises a first copper bar layer, a second copper bar layer and a third copper bar layer which are sequentially stacked from top to bottom in the vertical direction, and the extension direction of each copper bar layer is parallel to the horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar which are arranged left and right along the horizontal direction of the copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar which are arranged left and right along the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar which are arranged left and right along the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are of nonlinear bent structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are of linear strip structures with the same plane shape and plane size. According to the invention, the current-sharing deviation of the parallel modules can be greatly reduced, and the power balance requirements of a three-level ANPC architecture in the scenes of photovoltaic, wind power generation and the like can be met.

The IGBT power module comprises a power module body which is placed on a jig, the power module body is composed of a first insulating substrate and a second insulating substrate which are oppositely arranged, and one side of the first insulating substrate and one side of the second insulating substrate are provided with at least one lead frame. The first insulating substrate and the second insulating substrate are respectively welded with a semiconductor chip through welding flux, the semiconductor chips of the first insulating substrate and the second insulating substrate are respectively welded with a first copper sheet metal part and a second copper sheet metal part through welding flux, and the first copper sheet metal part and the second copper sheet metal part are welded on the semiconductor chips of the first insulating substrate and the second insulating substrate. The first copper sheet metal part and the second copper sheet metal part are respectively connected with the lead frame through bonding wires and solder, and the semiconductor chip comprises an insulated gate bipolar transistor and a diode which can be welded on two sides. The structure is simple and reasonable, the transient thermal shock resistance of the power module and the electrical connection reliability of the power module are improved, and the process is simple and convenient.

The utility model relates to the technical field of IGBT type power converters and heat dissipation devices, and discloses an IGBT type power converter water-cooling heat dissipation device which comprises a water-cooling heat dissipation device, the top of the water-cooling heat dissipation device is fixedly connected with an IGBT power module, the top of the water-cooling heat dissipation device is provided with an NTC temperature measurement resistor, the NTC temperature measurement resistor is located below the IGBT power module, and the NTC temperature measurement resistor is located below the IGBT power module. A laminated busbar is installed on the side face of the water-cooled radiator, and a supporting capacitor is installed below the laminated busbar. According to the water-cooling heat dissipation device of the IGBT type power supply converter, the NTC temperature measurement resistor is pre-embedded at the position where the IGBT power module is installed, so that the NTC temperature measurement resistor can directly measure the shell temperature of the IGBT power module, and the problem that the shell temperature of part of IGBT power modules cannot be directly measured due to insulation treatment of installation holes is solved; and the NTC temperature measurement resistor is directly pre-embedded in the heat source area of the IGBT power module, so that the temperature measurement accuracy is prevented from being influenced by temperature gradient distribution on the shell and the radiator of the IGBT power module, and the effect of improving the temperature measurement accuracy is achieved.

A method for calculating the cumulative damage degree of an IGBT power module in an electric vehicle, which relates to a method for digital calculation specifically applicable to a specific application, is a method for calculating the cumulative damage degree of an IGBT power module in an electric vehicle based on an improved Manson model. The steps are as follows: Obtain the basic parameters and driving conditions of the electric vehicle, the parameters of the permanent magnet synchronous motor, and the parameters of the IGBT power module; Obtain the junction temperature-time curve data of the IGBT power module, preprocess the junction temperature-time curve data, and establish a time series of peak and valley values of the junction temperature; Based on the rain flow counting method, process the time series of peak and valley values of the junction temperature to establish a junction temperature load spectrum; The LESIT model can be used to calculate the cyclic life of the IGBT power module under constant amplitude load; Establish an improved Manson model to calculate the cumulative damage degree of the IGBT power module under random variable amplitude load. The present invention does not require parameters determined by the physical characteristics of devices (such as IGBT power modules) obtained by fitting a large amount of experimental data. The mathematical formula only contains the load cyclic life, which is more easily implemented in actual engineering; The influence of the load size is added to the calculation process, and the interaction between adjacent loads is considered, making up for the deficiency in the accuracy of the calculation result of the total damage degree of the IGBT power module in the existing method, which cannot more conform to the cumulative process of fatigue damage in the actual working condition.

The invention relates to the technical field of power electronics, and discloses an IGBT (Insulated Gate Bipolar Translator) fixed-frequency voltage-regulating constant-current energy-saving device, which comprises a power supply module, an IGBT power module, a current sampling module, a driving module, a control module, a motor and a voltage acquisition module, the current sampling module is connected in series between the IGBT power module and a load, collects load current in real time and outputs a current feedback signal, and the driving module is used for outputting a driving signal with dead time to the IGBT power module. According to the invention, the effects that the dead time of the driving module is not fixed, the dynamic change of the load current is adapted and the energy-saving effect and the device stability are not influenced are realized, and the problems that the dead time of the driving module is fixed, the dynamic change of the load current cannot be adapted, the switching loss or the commutation peak is easy to generate and the power consumption is low in the prior art are solved. And the energy-saving effect and the stability of the device are influenced.

The present invention relates to the field of semiconductor technology, and in particular to an ANPC three-level topology power module, comprising an insulating plate, a metal layer, a metal pin and a power chip. Aiming at the problems that excessively high voltage spikes are generated when the module is switched due to large parasitic inductance of the module, affecting the working safety of the inverter, and that the all-silicon IGBT power module has large losses and low working efficiency when working, the voltage spikes are reduced and the working efficiency of the inverter is improved by folding the main power circuit of the power module in half and arranging them closely together and mixing silicon-based and silicon carbide-based power chips. The power module can be used in high-speed switching and high-frequency fields, and has significant practical value in high-power applications such as new energy and industrial frequency conversion that have high power density requirements.

The invention relates to a displacement imaging system suitable for semiconductor IGBT power module detection, which comprises a camera, a lens, a coaxial illumination module, an execution mechanism, an image processing module and a control module, and is characterized in that the execution mechanism drives the lens to reciprocate up and down in a direction vertical to an IGBT module; the control module controls the execution mechanism to drive the lens to move up and down and controls the camera to shoot images. And the image processing module is used for calculating the sharpness of different image areas of each image, performing height mapping according to the height of the sharpness of the image areas to obtain a height map, and using the gray value of the clearest image in the area as the gray value of the full-clear image in the same area to finally obtain the final full-clear image. According to the method, the height information of each point on the surface of the IGBT module can be accurately obtained to generate the height map, so that quantitative detection of three-dimensional shape parameters such as the height of the aluminum wire is realized, and the visibility and detectability of defects are greatly improved.

The application discloses a kind of estimating the temperature of motor controller cooling fluid of vehicle, estimating the temperature of motor controller cooling fluid of vehicle method includes: the maximum sampling temperature is detected by the temperature sensor inside IGBT power module;According to the current working state information of motor controller, the loss of the IGBT power module is calculated;According to the maximum sampling temperature, the loss of the IGBT power module and the thermal resistance parameter of the temperature sensor inside the IGBT power module, determine cooling fluid temperature.The application can obtain the temperature of cooling fluid by simple calculation, and the calculation is small, and simple to realize.

The utility model discloses a mixed state mode control system, which relates to the technical field of motor drive control systems and comprises an aluminum shell film capacitor, a radiator, an insulating support, an insulated gate bipolar transistor (IGBT) power module, a silicon carbide (SiC) power module and an integrated drive control board. The IGBT power module and the SiC power module are mounted above the radiator through the insulating support, different module mixed-state layout modes are adopted, meanwhile, different direct connection mutual welding processes are adopted, the structure arrangement is more compact, and the structure is more compact. The IGBT module has the technical characteristics of small size, light weight, high reliability, high working efficiency compared with a full IGBT module, greatly reduced cost compared with a full SiC module and the like, meanwhile, the design omits the traditional bolt connection and wiring harness connection, is simpler and more convenient to assemble, is suitable for automatic batch manufacturing, and provides a process basis for higher-automation-degree assembly.

The application discloses a current-sharing copper bar structure and an IGBT power module, which comprises a first copper bar layer, a second copper bar layer and a third copper bar layer stacked in sequence from top to bottom in a vertical direction, and the extension direction of each copper bar layer is parallel to a horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar arranged left and right in a horizontal direction of a copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar arranged left and right in the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar arranged left and right in the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are non-linear bending structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are one-word long strip structures with the same plane shape and plane size. The application can greatly reduce the current-sharing deviation of parallel modules and adapt to the power balance demand of a three-level ANPC architecture in photovoltaic, wind power and other scenes.

This invention provides a 62mm IGBT power module and its packaging method, comprising: soldering the chip to a single DBC; soldering the DBC to a base plate; fixing the housing to the base plate; the housing includes a housing body and signal terminals; the signal terminals are built into the housing body, with both ends located outside the housing body; performing wire bonding and power terminal soldering; the bonding between the signal terminals and the DBC and the bonding between the copper layers inside the DBC uses aluminum-clad copper wire; the power terminal soldering uses ultrasonic cold pressing soldering; filling the housing with insulating silicone and installing the top cover. This IGBT power module packaging method uses aluminum-clad copper wire for bonding between the signal terminals and the DBC, and between the copper layers of the DBC, which significantly optimizes conductivity, heat dissipation, reliability, oxidation resistance, and production cost compared to pure aluminum or pure copper wire; the ultrasonic cold pressing soldering for power terminal soldering improves the reliability of permanent connections; it reduces one high-temperature soldering and cleaning process, reducing production energy consumption and waste discharge.

The invention provides an abnormity monitoring method and device for an IGBT power module, and relates to the technical field of energy storage equipment. The method comprises the steps that multi-source operation data of an IGBT power module are acquired according to a key feature subset, and the key feature subset is a data category which is screened out by performing feature importance analysis on the operation data of the IGBT power module and has high junction temperature prediction contribution degree on the IGBT power module; based on the multi-source operation data and the junction temperature sequence within the preset duration, performing junction temperature prediction of the IGBT power module to obtain a junction temperature prediction value; and monitoring whether the IGBT power module operates abnormally or not according to the junction temperature predicted value. According to the invention, accurate early warning can be carried out on abnormal operation of the IGBT power module.