56 results about "Igbt power modules" patented technology

The invention provides an IGBT junction temperature prediction model construction method and system, and relates to the technical field of power electronic device thermal management, and the method comprises the steps: obtaining an initial data set representing the transient thermal response relation between an IGBT chip and an NTC temperature measurement point in an IGBT power module where the IGBT chip is located; training a neural network model based on the initial data set, and learning and representing a nonlinear function relationship between time and thermal impedance; inputting a preset new time sequence into the trained neural network model, and generating a time-continuous and noise-suppressed optimized thermal impedance data set; and based on the data set, performing parameter fitting on a preset lumped parameter thermal network model to identify thermal resistance and thermal capacity parameters of the model so as to complete construction of the junction temperature prediction model. According to the method, the neural network is used as a data optimization tool in a physical model parameter identification process, and accurate and convenient online prediction of the IGBT junction temperature is realized only by using the temperature signal of the NTC temperature measurement point of the module.

The invention belongs to the technical field of power electronics, and provides a portable IGBT power assembly detection device and method, and the device comprises a portable box body, and an adjustable DC power supply, a main control unit, a drive switching unit and an upper computer which are disposed in the portable box body. The adjustable direct-current power supply is used for supplying power to the tested IGBT power assembly; the main control unit is used for generating and sending a PWM driving signal to a tested IGBT power assembly, and obtaining key electrical parameters and temperature data of the tested IGBT power assembly through driving the switching unit. And after a fault signal reported by the detected IGBT power assembly through the driving switching unit is received, the key electrical parameters and / or the temperature data are / is detected to be abnormal, or a control instruction sent by the upper computer is received, the main control unit stops generating the PWM driving signal, and the main control unit is further used for uploading the key electrical parameters, the temperature data and the fault signal to the upper computer. The device is small in size and convenient to carry, and the operation convenience is remarkably improved.

The invention provides a packaging structure and a packaging method for improving the heat dissipation performance of an IGBT power module. The packaging structure comprises a copper substrate, a first epoxy glue layer, an epoxy resin-based composite material layer, a second epoxy glue layer, an upper bridge copper layer, a lower bridge copper layer, a chip solder layer and a power chip which are sequentially arranged from bottom to top, wherein the upper bridge copper layer and the lower bridge copper layer are integrally arranged; the power chip comprises an upper bridge chip and a lower bridge chip; the chip solder layer comprises an upper bridge chip solder layer and a lower bridge chip solder layer; the upper bridge chip solder layer is arranged on the upper bridge copper layer, and the upper bridge chip is arranged on the upper bridge chip solder layer; the lower bridge chip solder layer is arranged on the lower bridge copper layer, and the lower bridge chip is arranged on the lower bridge chip solder layer. According to the packaging structure, the epoxy resin-based composite material layer is adopted as the insulating layer, copper and a welding layer are reduced in heat flow transmission, the heat resistance from the chip to the shell is reduced, and the heat dissipation performance is improved; the copper layers of the upper and lower bridge arms are integrated, leads between the upper and lower bridges are reduced, the power loss of the IGBT is reduced, and the heat is reduced.

Provided is a power conversion device on which an IGBT power module that includes a main IGBT and a current sense IGBT in the same semiconductor chip is mounted, wherein the power conversion device is a high-performance and highly reliable power conversion device capable of accurately estimating a main current flowing through the main IGBT using a sense current in an entire operation region of the power conversion device. A power conversion device includes: a first IGBT through which a main current flows; a second IGBT which is disposed on the same semiconductor substrate as the first IGBT and through which a sense current flows; and a measurement device which calculates the main current based on the sense current, wherein the measurement device selects a method of calculating the main current corresponding to a current value of the sense current.

The invention discloses an active power filter residual life evaluation method, system and device, a medium and a product, and the method comprises the steps: constructing a failure degradation model of a DC side capacitor of an active power filter and a failure degradation model of an IGBT power module through a Wiener process; determining an edge cumulative distribution function of the direct-current side capacitor and an edge cumulative distribution function of the IGBT power module, coupling the edge cumulative distribution function of the direct-current side capacitor and the edge cumulative distribution function of the IGBT power module by using a Copula function, and based on a joint degradation probability distribution model, performing Monte Carlo simulation to obtain a degradation probability distribution model. According to the method, the degradation tracks of the direct current side capacitor and the IGBT power module from the starting moment to the future moment are simulated, and when any one degradation track passes through the failure threshold value, the latest moment is determined as the degradation moment, so that the residual life estimation value of the active power filter is determined, and the precision of residual life estimation is improved.

The application discloses a method for preparing an indium-based soft soldering sheet by vacuum hot pressing, belongs to the technical field of thermal interface materials for chip packaging and IGBT power module welding material preparation, and is characterized in that pure indium powder or indium-tin mixed alloy powder is uniformly laid in a graphite mold, the graphite mold is vibrated or knocked, and the pure indium powder or indium-tin mixed alloy powder is laid flat and densely; the graphite mold is fixed in a vacuum hot pressing machine, a pressure of 10 MPa is applied to the vacuum hot pressing machine, vacuum is drawn to 1*10 ‑3 Pa, a temperature rising rate is controlled to be less than 5 DEG C / min, when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, a pressure maintaining state is kept for 0.5-1 hours, then the mold is cooled to room temperature along with the furnace, the mold is taken out, and a pure indium soldering sheet or an indium-tin-based multi-element alloy soldering sheet is obtained. The method has simple process and low energy consumption, and the performance of the prepared soft thin soldering sheet is obviously improved.

The application provides a kind of IGBT junction temperature prediction model construction method and system, it is related to power electronic device thermal management technical field, method includes: obtaining the initial data set of the transient thermal response relationship between the IGBT chip and the NTC temperature measuring point in the IGBT power module;Based on the initial data set, the neural network model is trained, and the nonlinear function relationship between time and thermal impedance is learned and characterized;The preset new time series is input into the trained neural network model, and the optimized thermal impedance data set with continuous time and noise suppression is generated;Based on the data set, the lumped parameter thermal network model is parameter fitted, to identify its thermal resistance and heat capacity parameters, complete the construction of junction temperature prediction model.The application uses neural network as a data optimization tool in the parameter identification process of physical model, only uses the temperature signal of NTC temperature measuring point provided by the module, realizes the accurate, convenient online prediction of IGBT junction temperature.

A method for preparing an indium-based soft soldering lug through vacuum hot press molding belongs to the technical field of preparation of thermal interface materials for chip packaging and IGBT (insulated gate bipolar transistor) power module welding materials, and comprises the following steps: uniformly paving pure indium powder or indium-tin mixed alloy powder in a graphite mold, and vibrating or knocking the graphite mold to make the pure indium powder or the indium-tin mixed alloy powder flatly and compactly paved; fixing the graphite mold in a vacuum hot press, applying a pressure of 10 MPa to the vacuum hot press, vacuumizing to 1 * 10 <-3 > Pa, and controlling the heating rate within 5 DEG C / min; and when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, keeping a pressurized state and preserving heat for 0.5-1 hour, then cooling the mold to room temperature along with the furnace, and taking out the mold to obtain the pure indium soldering lug or the indium-tin-based multi-component alloy soldering lug. The method is simple in process and low in energy consumption, and the performance of the prepared soft thin soldering lug is remarkably improved.

The utility model provides a silicon carbide and silicon hybrid parallel power module, comprising an IGBT power module group, the IGBT power module group comprises at least one IGBT power module, and the IGBT power module is provided with a DC + terminal, a DC-terminal and an AC terminal; a SiC power module group, the SiC power module group comprising at least one SiC power module, the SiC power module having a DC + terminal, a DC-terminal, a power AC terminal, and a parallel AC terminal; the DC + copper bar is connected with the DC + terminal of each IGBT power module and the DC + terminal of each SiC power module at the same time; the DC-copper bar is connected with the DC-terminal of each IGBT power module and the DC-terminal of each SiC power module at the same time; the power AC copper bar is connected with the AC terminal of each IGBT power module and the power AC terminal of each SiC power module at the same time; and the parallel AC copper bar is connected with the parallel AC terminal of each SiC power module at the same time. According to the utility model, the problem that the existing power module is not satisfactory in comprehensive performance of loss and cost can be solved.

The invention discloses a current-sharing copper bar structure and an IGBT power module, the current-sharing copper bar structure comprises a first copper bar layer, a second copper bar layer and a third copper bar layer which are sequentially stacked from top to bottom in the vertical direction, and the extension direction of each copper bar layer is parallel to the horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar which are arranged left and right along the horizontal direction of the copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar which are arranged left and right along the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar which are arranged left and right along the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are of nonlinear bent structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are of linear strip structures with the same plane shape and plane size. According to the invention, the current-sharing deviation of the parallel modules can be greatly reduced, and the power balance requirements of a three-level ANPC architecture in the scenes of photovoltaic, wind power generation and the like can be met.

The utility model relates to the technical field of IGBT type power converters and heat dissipation devices, and discloses an IGBT type power converter water-cooling heat dissipation device which comprises a water-cooling heat dissipation device, the top of the water-cooling heat dissipation device is fixedly connected with an IGBT power module, the top of the water-cooling heat dissipation device is provided with an NTC temperature measurement resistor, the NTC temperature measurement resistor is located below the IGBT power module, and the NTC temperature measurement resistor is located below the IGBT power module. A laminated busbar is installed on the side face of the water-cooled radiator, and a supporting capacitor is installed below the laminated busbar. According to the water-cooling heat dissipation device of the IGBT type power supply converter, the NTC temperature measurement resistor is pre-embedded at the position where the IGBT power module is installed, so that the NTC temperature measurement resistor can directly measure the shell temperature of the IGBT power module, and the problem that the shell temperature of part of IGBT power modules cannot be directly measured due to insulation treatment of installation holes is solved; and the NTC temperature measurement resistor is directly pre-embedded in the heat source area of the IGBT power module, so that the temperature measurement accuracy is prevented from being influenced by temperature gradient distribution on the shell and the radiator of the IGBT power module, and the effect of improving the temperature measurement accuracy is achieved.

The invention relates to the technical field of power electronics, and discloses an IGBT (Insulated Gate Bipolar Translator) fixed-frequency voltage-regulating constant-current energy-saving device, which comprises a power supply module, an IGBT power module, a current sampling module, a driving module, a control module, a motor and a voltage acquisition module, the current sampling module is connected in series between the IGBT power module and a load, collects load current in real time and outputs a current feedback signal, and the driving module is used for outputting a driving signal with dead time to the IGBT power module. According to the invention, the effects that the dead time of the driving module is not fixed, the dynamic change of the load current is adapted and the energy-saving effect and the device stability are not influenced are realized, and the problems that the dead time of the driving module is fixed, the dynamic change of the load current cannot be adapted, the switching loss or the commutation peak is easy to generate and the power consumption is low in the prior art are solved. And the energy-saving effect and the stability of the device are influenced.

The invention relates to a displacement imaging system suitable for semiconductor IGBT power module detection, which comprises a camera, a lens, a coaxial illumination module, an execution mechanism, an image processing module and a control module, and is characterized in that the execution mechanism drives the lens to reciprocate up and down in a direction vertical to an IGBT module; the control module controls the execution mechanism to drive the lens to move up and down and controls the camera to shoot images. And the image processing module is used for calculating the sharpness of different image areas of each image, performing height mapping according to the height of the sharpness of the image areas to obtain a height map, and using the gray value of the clearest image in the area as the gray value of the full-clear image in the same area to finally obtain the final full-clear image. According to the method, the height information of each point on the surface of the IGBT module can be accurately obtained to generate the height map, so that quantitative detection of three-dimensional shape parameters such as the height of the aluminum wire is realized, and the visibility and detectability of defects are greatly improved.

The application discloses a kind of estimating the temperature of motor controller cooling fluid of vehicle, estimating the temperature of motor controller cooling fluid of vehicle method includes: the maximum sampling temperature is detected by the temperature sensor inside IGBT power module;According to the current working state information of motor controller, the loss of the IGBT power module is calculated;According to the maximum sampling temperature, the loss of the IGBT power module and the thermal resistance parameter of the temperature sensor inside the IGBT power module, determine cooling fluid temperature.The application can obtain the temperature of cooling fluid by simple calculation, and the calculation is small, and simple to realize.

The application discloses a current-sharing copper bar structure and an IGBT power module, which comprises a first copper bar layer, a second copper bar layer and a third copper bar layer stacked in sequence from top to bottom in a vertical direction, and the extension direction of each copper bar layer is parallel to a horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar arranged left and right in a horizontal direction of a copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar arranged left and right in the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar arranged left and right in the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are non-linear bending structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are one-word long strip structures with the same plane shape and plane size. The application can greatly reduce the current-sharing deviation of parallel modules and adapt to the power balance demand of a three-level ANPC architecture in photovoltaic, wind power and other scenes.

The invention provides an abnormity monitoring method and device for an IGBT power module, and relates to the technical field of energy storage equipment. The method comprises the steps that multi-source operation data of an IGBT power module are acquired according to a key feature subset, and the key feature subset is a data category which is screened out by performing feature importance analysis on the operation data of the IGBT power module and has high junction temperature prediction contribution degree on the IGBT power module; based on the multi-source operation data and the junction temperature sequence within the preset duration, performing junction temperature prediction of the IGBT power module to obtain a junction temperature prediction value; and monitoring whether the IGBT power module operates abnormally or not according to the junction temperature predicted value. According to the invention, accurate early warning can be carried out on abnormal operation of the IGBT power module.

The invention discloses an IGBT power module temperature state evaluation method and device based on multi-condition physical parameter and neural network fusion, and relates to the technical field of direct current transmission protection. Compared with a traditional experimental method, the method can overcome the defect that temperature distribution on the surface of the chip cannot be directly measured in an experiment, and compared with traditional finite element simulation, temperature distribution can be rapidly predicted, traditional prediction efficiency is greatly improved, blank parameters under non-convergent working conditions in finite element simulation are made up, and the method is suitable for large-scale popularization and application. And the temperature state of the IGBT high-power device can be evaluated more comprehensively. Meanwhile, a condition generation framework is used, a temperature distribution prediction model is developed through a convolutional neural network, and compared with a traditional condition generation adversarial model and a condition variation auto-encoder method, structural complexity can be avoided, training stability can be improved, and prediction precision is guaranteed in combination with physical constraints.

The utility model discloses a die-casting box body radiator, inverter and photovoltaic system, the die-casting box body radiator (100) comprises a substrate (10) and a first boss (30), the substrate (10) is provided with an IGBT power module (20), one side of the IGBT power module (20) is arranged in the substrate (10), the other side of the IGBT power module (20) is attached to the substrate (20), the first boss (30) has a first thickness, the first boss (30) is arranged on the substrate (10) corresponding to the IGBT power module (20), and the first boss (30) is provided with a second thickness. The IGBT power module (20) is lifted by the first boss (30), the thickness of the position, where the IGBT power module (20) is located, of the substrate (10) is increased, heat generated when the IGBT power module (20) works is better dissipated, and the substrate (10) and the first boss (30) are integrally formed in a die-casting mode. According to the utility model, the characteristics of small volume and portability of a die-casting box body radiator are maintained, the radiating effect is optimal, the cost is lower, and the radiator is more competitive.

The invention relates to the technical field of converter stations, and discloses a converter station DC signal large current injection control method and system, and a storage medium. The method is based on a plurality of test current generators distributed in a converter station, each generator comprises a direct current source, an LED light source, a light guide module, a low-voltage photovoltaic module and a current sampling module, and the method comprises the following steps: outputting background current when the direct current source is not started; the LED is driven in response to the starting instruction, and light is transmitted to the low-voltage photovoltaic module through the light guide module; collecting the first current, calculating the difference between the first current and the reference current, and adjusting the output power of the current source in a negative correlation manner; the light guide amount is adjusted with different coefficients according to whether the background current is within the first range. The method replaces a large-current IGBT power module to reduce the cost, and can accurately match the impedance of a tested point, restore a complex fault current environment, improve the precision and stability of a test current, effectively check hidden dangers, and guarantee the reliability of the whole group of DC protection tests.

The invention belongs to the technical field of motor driving, and particularly relates to an energy feedback control system of a permanent magnet synchronous motor. The objective of the invention is to solve the technical problems that dynamic decoupling cannot be carried out and energy feedback efficiency is reduced in the control process of an energy feedback control method driven by a super capacitor. Comprising a permanent magnet synchronous motor used for generating three-phase alternating current as a generator in a braking mode; the pulse width modulation rectifier is used for rectifying the three-phase alternating current into direct current; wherein the pulse width modulation rectifier comprises an IGBT (Insulated Gate Bipolar Translator) power module; the double closed-loop control module is used for generating a space vector pulse width modulation signal according to the bus voltage of the power battery and the current signal of the permanent magnet synchronous motor; wherein the space vector pulse width modulation signal is used for adjusting direct current output by the IGBT power module; and the power battery is used for absorbing the direct current output by the pulse width modulation rectifier and converting the direct current into chemical energy for storage.

The utility model relates to the technical field of power modules, in particular to an IGBT power module signal transmission circuit, which comprises a main control chip, an isolation circuit, a push-pull circuit, an IGBT power module and a protection circuit, the main control chip, the isolation circuit, the push-pull circuit and the IGBT power module are electrically connected in sequence, an input end of the isolation circuit is connected with a PWM signal output by the main control chip, and an output end of the protection circuit is connected with the IGBT power module. The protection circuit comprises a sampling circuit and an analog-to-digital conversion chip which are electrically connected. An output port of the analog-to-digital conversion chip is connected with an input port of the main control chip. According to the utility model, the isolation circuit isolates a front-stage circuit and a rear-stage circuit, so that the stability and the reliability are improved, the push-pull circuit can accelerate the switching speed and improve the working efficiency and the response speed, the working data of the IGBT power module are obtained through the sampling circuit and the analog-to-digital conversion chip, and when the IGBT power module goes wrong, the main control chip timely turns off the IGBT power module, so that the IGBT power module is protected. The fault risk is reduced.

The invention relates to the technical field of power electronic device state monitoring and failure discrimination, and discloses an IGBT failure discrimination method and system based on temperature and voltage multi-mode fusion, a medium and equipment, and the method comprises the steps: synchronously collecting a voltage signal and a temperature signal in an IGBT operation process; the temperature signal comprises junction temperature data reflecting the overall thermal state of the chip and an infrared temperature image reflecting the spatial distribution of a surface temperature field of the IGBT power module; performing time sequence feature extraction on the voltage signal to obtain a voltage modal feature used for representing the electrical degradation characteristic of the IGBT; joint modeling is carried out on the junction temperature data and the infrared temperature image, and temperature modal characteristics used for comprehensively representing IGBT thermal state time evolution characteristics and spatial distribution characteristics are constructed; fusing the voltage modal features and the temperature modal features in a feature layer, and constructing multi-modal fusion features; and based on the multi-modal fusion features, identifying the failure state of the IGBT through a failure discrimination model.

The present invention relates to a press-fit type IGBT power module encapsulated with gradient functional composite materials. The IGBT sub-module between the collector metal layer and the emitter metal layer includes a collector gradient functional composite material layer, an IGBT power chip, an emitter gradient functional composite material layer, a copper base, and a gate PCB board that are press-fitted in sequence from top to bottom. After press-fitting, the IGBT sub-module is sleeved with a packaging shell bracket. Gate spring thimbles are placed in the notches of the emitter gradient functional composite material layer and the copper base after press-fitting. The thermal expansion coefficients of the collector gradient functional composite material layer and the collector metal layer, the surface of the collector of the IGBT power chip, the emitter gradient functional composite material layer, the surface of the emitter of the IGBT power chip, and the copper base are matched, solving the problems of the decline in the electrothermal contact performance of the component interface, the reduction in heat dissipation efficiency, and the shortening of the device service life caused by the mismatch of the thermal expansion coefficients between the IGBT power chip and the packaging material components in the existing press-fit type IGBT power module.

The invention discloses a simulation on-load test device and method for a 110kV transformer substation with synchronous output of voltage and current. Relates to the technical field of power transformation. The problems of insufficient output voltage / current synchronization precision, poor reliability and adaptability of a test system and single test safety protection in an on-load test are solved. The test system comprises a voltage and current output loop and a control loop. The voltage and current output loop comprises a three-phase rectification filter circuit and an IGBT power module which are connected in sequence, and the control loop comprises a phase lock tracking circuit, a phase compensation circuit and a main control module which are connected in sequence. Besides, the impedance adaptive adjustment module can monitor the impedance change of the main transformer load in real time, dynamically adjust the output parameters of the IGBT power module, and realize accurate output under the working conditions of different capacities and different impedances. The system can monitor the operation temperature of a current rising / boosting module and main transformer load impedance abrupt change in real time, and is combined with traditional overvoltage and overcurrent protection to effectively avoid safety risks caused by too high temperature rise of the system and abnormal abrupt change of the load.

A bidirectional power module packaging structure and packaging method are disclosed. In the structure, a first access terminal is configured as the input terminal of the IGBT power module, and a second access terminal is configured as the output terminal of the IGBT power module. A positive power module is disposed between the first access terminal and the second access terminal, and includes three stacked positive sub-modules connected to the first and second access terminals. A DBC substrate is disposed between the first and second access terminals. A first connection terminal is connected to the first access terminal at one end and to the DBC substrate at the other end. A second connection terminal is connected to the second access terminal at one end and to the DBC substrate at the other end. An IGBT chip is disposed on the upper surface of the DBC substrate, and an FRD chip is disposed on the upper surface of the DBC substrate and arranged at intervals from the IGBT chip. A bonding wire connects the FRD chip and the IGBT chip. A reverse power module is disposed between the first and second access terminals.

The utility model relates to the technical field of reactive power compensation, in particular to a water-cooling control system of an SVG reactive power compensation device, which comprises a reactive power compensation device body, and the reactive power compensation device body comprises an IGBT power module, an SVG inlet valve body and an SVG outlet valve body. The cooling device further comprises an inner circulation cooling assembly and an outer circulation cooling assembly. The internal circulation cooling assembly comprises a water cooling plate and an internal circulation pipe, the water cooling plate is attached to the IGBT power module, the SVG inlet valve body is connected with one end of the water cooling plate through the internal circulation pipe, and the other end of the water cooling plate is connected with the SVG outlet valve body through the internal circulation pipe; the outer circulation cooling assembly comprises a PLC, a detection sensor, a circulating water pump, a water-air heat exchanger, a gas-water separator, a buffer water tank and an outer circulation loop pipe. The water cooling plate directly exchanges heat with the IGBT power module, so that heat generated during operation of the IGBT power module can be effectively absorbed, and efficient heat dissipation of the SVG reactive power compensation device is realized.

The application discloses an automatic double-pulse test system and a test method, which comprise an upper computer unit, a controller unit, a capacitor charging and discharging circuit unit, a load inductor unit, an IGBT power unit and an oscilloscope unit; the upper computer unit is interconnected with the controller unit; the controller unit is interconnected with the IGBT power unit; the control end of the controller unit is connected with the input end of the capacitor charging and discharging circuit unit and the load inductor unit; and the output end of the load inductor unit, the capacitor charging and discharging circuit unit and the oscilloscope unit is connected with the IGBT power unit. The whole operation process can be realized through the upper computer. The controller realizes full-automatic control and electrical isolation of the whole double-pulse test circuit, effectively guarantees test safety, the turn-on and turn-off resistance of the IGBT drive can be adjusted on line, operation is convenient, and test efficiency is greatly improved. The automatic double-pulse test system can meet most IGBT double-pulse test scenes, and can directly test the IGBT power module and the capacitor module by quickly connecting the modules with the system.

The invention relates to the technical field of circuit simulation optimization, in particular to a short circuit reliability optimization method, device and system for a power module and a medium, and the method comprises the steps: obtaining a selected circuit topology, and carrying out the three-dimensional modeling of an IGBT power module in the circuit topology, and obtaining a three-dimensional model; using a finite element simulation tool to perform finite element simulation of the short-circuit current non-uniform mobility on the three-dimensional model to obtain a non-uniform mobility simulation result; determining the temperature rise generated by the IGBT power module at the short circuit moment according to the non-uniform mobility simulation result and the heat capacity of each sub-chip; judging whether the IGBT power module has a short-circuit failure risk or not according to the non-uniform mobility simulation result and the temperature rise, and determining that the three-dimensional model meets the structural design requirement under the condition that the IGBT power module does not have the short-circuit failure risk; according to the method, the product fault problem caused by overhigh local current density can be avoided, the development period is shortened, and the development cost is saved.

The invention belongs to the technical field of test equipment, and discloses IGBT power module test equipment, which comprises a mounting rack, the mounting rack is provided with a detection cavity for placing an IGBT power module, the mounting rack is slidably provided with a lifting plate, the lifting plate is provided with an air exhaust box, the air exhaust box is provided with an air outlet, and the air outlet is provided with an air inlet. An air outlet of the exhaust box corresponds to an air inlet of the IGBT power module to be detected, a cooling mechanism used for supplying air into the exhaust box and a lifting mechanism used for adjusting the height of the lifting plate are arranged on the mounting frame, a clamping mechanism used for fixing the IGBT power module is arranged on the mounting frame, and the clamping mechanism comprises a clamping assembly. According to the IGBT power module cooling device, by improving the prior art, the position of the air outlet of the air exhaust box can be changed by operating the lifting mechanism to adjust the heights of the lifting plate and the air exhaust box, so that cooling operation can be performed on various types of IGBT power modules, and the application range of the device is expanded.

The invention relates to a dual-motor heterogeneous electric drive system for an electric heavy truck and a control method of the dual-motor heterogeneous electric drive system. The dual-motor heterogeneous electric drive system for the electric heavy truck comprises a motor A and a motor controller A. The motor controller A adopts an IGBT power module. A motor B is connected with a motor controller B, and the motor controller B adopts a SiC MOSFET power module; the input end of the power coupling device is respectively connected with the output shaft of the motor A and the output shaft of the motor B, and the power coupling device is used for coupling and outputting the power of the two motors; the power coupling device comprises a first speed reducer in transmission connection with the motor A and a second speed reducer in transmission connection with the motor B; according to the dual-motor heterogeneous electric drive system for the electric heavy truck and the control method of the dual-motor heterogeneous electric drive system, through cooperation of heterogeneous hardware and intelligent control, optimal balance of system efficiency and reliability is achieved at reasonable cost, and the contradiction between cost and endurance in the field of the electric heavy truck is solved. Meanwhile, the system has redundancy capacity, and the vehicle attendance rate is increased.