37 results about "Igbt power modules" patented technology

The invention provides an IGBT junction temperature prediction model construction method and system, and relates to the technical field of power electronic device thermal management, and the method comprises the steps: obtaining an initial data set representing the transient thermal response relation between an IGBT chip and an NTC temperature measurement point in an IGBT power module where the IGBT chip is located; training a neural network model based on the initial data set, and learning and representing a nonlinear function relationship between time and thermal impedance; inputting a preset new time sequence into the trained neural network model, and generating a time-continuous and noise-suppressed optimized thermal impedance data set; and based on the data set, performing parameter fitting on a preset lumped parameter thermal network model to identify thermal resistance and thermal capacity parameters of the model so as to complete construction of the junction temperature prediction model. According to the method, the neural network is used as a data optimization tool in a physical model parameter identification process, and accurate and convenient online prediction of the IGBT junction temperature is realized only by using the temperature signal of the NTC temperature measurement point of the module.

Provided is a power conversion device on which an IGBT power module that includes a main IGBT and a current sense IGBT in the same semiconductor chip is mounted, wherein the power conversion device is a high-performance and highly reliable power conversion device capable of accurately estimating a main current flowing through the main IGBT using a sense current in an entire operation region of the power conversion device. A power conversion device includes: a first IGBT through which a main current flows; a second IGBT which is disposed on the same semiconductor substrate as the first IGBT and through which a sense current flows; and a measurement device which calculates the main current based on the sense current, wherein the measurement device selects a method of calculating the main current corresponding to a current value of the sense current.

The invention discloses an active power filter residual life evaluation method, system and device, a medium and a product, and the method comprises the steps: constructing a failure degradation model of a DC side capacitor of an active power filter and a failure degradation model of an IGBT power module through a Wiener process; determining an edge cumulative distribution function of the direct-current side capacitor and an edge cumulative distribution function of the IGBT power module, coupling the edge cumulative distribution function of the direct-current side capacitor and the edge cumulative distribution function of the IGBT power module by using a Copula function, and based on a joint degradation probability distribution model, performing Monte Carlo simulation to obtain a degradation probability distribution model. According to the method, the degradation tracks of the direct current side capacitor and the IGBT power module from the starting moment to the future moment are simulated, and when any one degradation track passes through the failure threshold value, the latest moment is determined as the degradation moment, so that the residual life estimation value of the active power filter is determined, and the precision of residual life estimation is improved.

The application discloses a method for preparing an indium-based soft soldering sheet by vacuum hot pressing, belongs to the technical field of thermal interface materials for chip packaging and IGBT power module welding material preparation, and is characterized in that pure indium powder or indium-tin mixed alloy powder is uniformly laid in a graphite mold, the graphite mold is vibrated or knocked, and the pure indium powder or indium-tin mixed alloy powder is laid flat and densely; the graphite mold is fixed in a vacuum hot pressing machine, a pressure of 10 MPa is applied to the vacuum hot pressing machine, vacuum is drawn to 1*10 ‑3 Pa, a temperature rising rate is controlled to be less than 5 DEG C / min, when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, a pressure maintaining state is kept for 0.5-1 hours, then the mold is cooled to room temperature along with the furnace, the mold is taken out, and a pure indium soldering sheet or an indium-tin-based multi-element alloy soldering sheet is obtained. The method has simple process and low energy consumption, and the performance of the prepared soft thin soldering sheet is obviously improved.

The application provides a kind of IGBT junction temperature prediction model construction method and system, it is related to power electronic device thermal management technical field, method includes: obtaining the initial data set of the transient thermal response relationship between the IGBT chip and the NTC temperature measuring point in the IGBT power module;Based on the initial data set, the neural network model is trained, and the nonlinear function relationship between time and thermal impedance is learned and characterized;The preset new time series is input into the trained neural network model, and the optimized thermal impedance data set with continuous time and noise suppression is generated;Based on the data set, the lumped parameter thermal network model is parameter fitted, to identify its thermal resistance and heat capacity parameters, complete the construction of junction temperature prediction model.The application uses neural network as a data optimization tool in the parameter identification process of physical model, only uses the temperature signal of NTC temperature measuring point provided by the module, realizes the accurate, convenient online prediction of IGBT junction temperature.

A method for preparing an indium-based soft soldering lug through vacuum hot press molding belongs to the technical field of preparation of thermal interface materials for chip packaging and IGBT (insulated gate bipolar transistor) power module welding materials, and comprises the following steps: uniformly paving pure indium powder or indium-tin mixed alloy powder in a graphite mold, and vibrating or knocking the graphite mold to make the pure indium powder or the indium-tin mixed alloy powder flatly and compactly paved; fixing the graphite mold in a vacuum hot press, applying a pressure of 10 MPa to the vacuum hot press, vacuumizing to 1 * 10 <-3 > Pa, and controlling the heating rate within 5 DEG C / min; and when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, keeping a pressurized state and preserving heat for 0.5-1 hour, then cooling the mold to room temperature along with the furnace, and taking out the mold to obtain the pure indium soldering lug or the indium-tin-based multi-component alloy soldering lug. The method is simple in process and low in energy consumption, and the performance of the prepared soft thin soldering lug is remarkably improved.

The utility model provides a silicon carbide and silicon hybrid parallel power module, comprising an IGBT power module group, the IGBT power module group comprises at least one IGBT power module, and the IGBT power module is provided with a DC + terminal, a DC-terminal and an AC terminal; a SiC power module group, the SiC power module group comprising at least one SiC power module, the SiC power module having a DC + terminal, a DC-terminal, a power AC terminal, and a parallel AC terminal; the DC + copper bar is connected with the DC + terminal of each IGBT power module and the DC + terminal of each SiC power module at the same time; the DC-copper bar is connected with the DC-terminal of each IGBT power module and the DC-terminal of each SiC power module at the same time; the power AC copper bar is connected with the AC terminal of each IGBT power module and the power AC terminal of each SiC power module at the same time; and the parallel AC copper bar is connected with the parallel AC terminal of each SiC power module at the same time. According to the utility model, the problem that the existing power module is not satisfactory in comprehensive performance of loss and cost can be solved.

The invention relates to the technical field of power electronics, and discloses an IGBT (Insulated Gate Bipolar Translator) fixed-frequency voltage-regulating constant-current energy-saving device, which comprises a power supply module, an IGBT power module, a current sampling module, a driving module, a control module, a motor and a voltage acquisition module, the current sampling module is connected in series between the IGBT power module and a load, collects load current in real time and outputs a current feedback signal, and the driving module is used for outputting a driving signal with dead time to the IGBT power module. According to the invention, the effects that the dead time of the driving module is not fixed, the dynamic change of the load current is adapted and the energy-saving effect and the device stability are not influenced are realized, and the problems that the dead time of the driving module is fixed, the dynamic change of the load current cannot be adapted, the switching loss or the commutation peak is easy to generate and the power consumption is low in the prior art are solved. And the energy-saving effect and the stability of the device are influenced.

The invention relates to a displacement imaging system suitable for semiconductor IGBT power module detection, which comprises a camera, a lens, a coaxial illumination module, an execution mechanism, an image processing module and a control module, and is characterized in that the execution mechanism drives the lens to reciprocate up and down in a direction vertical to an IGBT module; the control module controls the execution mechanism to drive the lens to move up and down and controls the camera to shoot images. And the image processing module is used for calculating the sharpness of different image areas of each image, performing height mapping according to the height of the sharpness of the image areas to obtain a height map, and using the gray value of the clearest image in the area as the gray value of the full-clear image in the same area to finally obtain the final full-clear image. According to the method, the height information of each point on the surface of the IGBT module can be accurately obtained to generate the height map, so that quantitative detection of three-dimensional shape parameters such as the height of the aluminum wire is realized, and the visibility and detectability of defects are greatly improved.

The application discloses a kind of estimating the temperature of motor controller cooling fluid of vehicle, estimating the temperature of motor controller cooling fluid of vehicle method includes: the maximum sampling temperature is detected by the temperature sensor inside IGBT power module;According to the current working state information of motor controller, the loss of the IGBT power module is calculated;According to the maximum sampling temperature, the loss of the IGBT power module and the thermal resistance parameter of the temperature sensor inside the IGBT power module, determine cooling fluid temperature.The application can obtain the temperature of cooling fluid by simple calculation, and the calculation is small, and simple to realize.

The application discloses a current-sharing copper bar structure and an IGBT power module, which comprises a first copper bar layer, a second copper bar layer and a third copper bar layer stacked in sequence from top to bottom in a vertical direction, and the extension direction of each copper bar layer is parallel to a horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar arranged left and right in a horizontal direction of a copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar arranged left and right in the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar arranged left and right in the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are non-linear bending structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are one-word long strip structures with the same plane shape and plane size. The application can greatly reduce the current-sharing deviation of parallel modules and adapt to the power balance demand of a three-level ANPC architecture in photovoltaic, wind power and other scenes.

The invention provides an abnormity monitoring method and device for an IGBT power module, and relates to the technical field of energy storage equipment. The method comprises the steps that multi-source operation data of an IGBT power module are acquired according to a key feature subset, and the key feature subset is a data category which is screened out by performing feature importance analysis on the operation data of the IGBT power module and has high junction temperature prediction contribution degree on the IGBT power module; based on the multi-source operation data and the junction temperature sequence within the preset duration, performing junction temperature prediction of the IGBT power module to obtain a junction temperature prediction value; and monitoring whether the IGBT power module operates abnormally or not according to the junction temperature predicted value. According to the invention, accurate early warning can be carried out on abnormal operation of the IGBT power module.

The invention discloses an IGBT power module temperature state evaluation method and device based on multi-condition physical parameter and neural network fusion, and relates to the technical field of direct current transmission protection. Compared with a traditional experimental method, the method can overcome the defect that temperature distribution on the surface of the chip cannot be directly measured in an experiment, and compared with traditional finite element simulation, temperature distribution can be rapidly predicted, traditional prediction efficiency is greatly improved, blank parameters under non-convergent working conditions in finite element simulation are made up, and the method is suitable for large-scale popularization and application. And the temperature state of the IGBT high-power device can be evaluated more comprehensively. Meanwhile, a condition generation framework is used, a temperature distribution prediction model is developed through a convolutional neural network, and compared with a traditional condition generation adversarial model and a condition variation auto-encoder method, structural complexity can be avoided, training stability can be improved, and prediction precision is guaranteed in combination with physical constraints.

The utility model discloses a die-casting box body radiator, inverter and photovoltaic system, the die-casting box body radiator (100) comprises a substrate (10) and a first boss (30), the substrate (10) is provided with an IGBT power module (20), one side of the IGBT power module (20) is arranged in the substrate (10), the other side of the IGBT power module (20) is attached to the substrate (20), the first boss (30) has a first thickness, the first boss (30) is arranged on the substrate (10) corresponding to the IGBT power module (20), and the first boss (30) is provided with a second thickness. The IGBT power module (20) is lifted by the first boss (30), the thickness of the position, where the IGBT power module (20) is located, of the substrate (10) is increased, heat generated when the IGBT power module (20) works is better dissipated, and the substrate (10) and the first boss (30) are integrally formed in a die-casting mode. According to the utility model, the characteristics of small volume and portability of a die-casting box body radiator are maintained, the radiating effect is optimal, the cost is lower, and the radiator is more competitive.

The invention relates to the technical field of converter stations, and discloses a converter station DC signal large current injection control method and system, and a storage medium. The method is based on a plurality of test current generators distributed in a converter station, each generator comprises a direct current source, an LED light source, a light guide module, a low-voltage photovoltaic module and a current sampling module, and the method comprises the following steps: outputting background current when the direct current source is not started; the LED is driven in response to the starting instruction, and light is transmitted to the low-voltage photovoltaic module through the light guide module; collecting the first current, calculating the difference between the first current and the reference current, and adjusting the output power of the current source in a negative correlation manner; the light guide amount is adjusted with different coefficients according to whether the background current is within the first range. The method replaces a large-current IGBT power module to reduce the cost, and can accurately match the impedance of a tested point, restore a complex fault current environment, improve the precision and stability of a test current, effectively check hidden dangers, and guarantee the reliability of the whole group of DC protection tests.

The utility model relates to the technical field of power modules, in particular to an IGBT power module signal transmission circuit, which comprises a main control chip, an isolation circuit, a push-pull circuit, an IGBT power module and a protection circuit, the main control chip, the isolation circuit, the push-pull circuit and the IGBT power module are electrically connected in sequence, an input end of the isolation circuit is connected with a PWM signal output by the main control chip, and an output end of the protection circuit is connected with the IGBT power module. The protection circuit comprises a sampling circuit and an analog-to-digital conversion chip which are electrically connected. An output port of the analog-to-digital conversion chip is connected with an input port of the main control chip. According to the utility model, the isolation circuit isolates a front-stage circuit and a rear-stage circuit, so that the stability and the reliability are improved, the push-pull circuit can accelerate the switching speed and improve the working efficiency and the response speed, the working data of the IGBT power module are obtained through the sampling circuit and the analog-to-digital conversion chip, and when the IGBT power module goes wrong, the main control chip timely turns off the IGBT power module, so that the IGBT power module is protected. The fault risk is reduced.

The invention relates to the technical field of power electronic device state monitoring and failure discrimination, and discloses an IGBT failure discrimination method and system based on temperature and voltage multi-mode fusion, a medium and equipment, and the method comprises the steps: synchronously collecting a voltage signal and a temperature signal in an IGBT operation process; the temperature signal comprises junction temperature data reflecting the overall thermal state of the chip and an infrared temperature image reflecting the spatial distribution of a surface temperature field of the IGBT power module; performing time sequence feature extraction on the voltage signal to obtain a voltage modal feature used for representing the electrical degradation characteristic of the IGBT; joint modeling is carried out on the junction temperature data and the infrared temperature image, and temperature modal characteristics used for comprehensively representing IGBT thermal state time evolution characteristics and spatial distribution characteristics are constructed; fusing the voltage modal features and the temperature modal features in a feature layer, and constructing multi-modal fusion features; and based on the multi-modal fusion features, identifying the failure state of the IGBT through a failure discrimination model.

The invention discloses a simulation on-load test device and method for a 110kV transformer substation with synchronous output of voltage and current. Relates to the technical field of power transformation. The problems of insufficient output voltage / current synchronization precision, poor reliability and adaptability of a test system and single test safety protection in an on-load test are solved. The test system comprises a voltage and current output loop and a control loop. The voltage and current output loop comprises a three-phase rectification filter circuit and an IGBT power module which are connected in sequence, and the control loop comprises a phase lock tracking circuit, a phase compensation circuit and a main control module which are connected in sequence. Besides, the impedance adaptive adjustment module can monitor the impedance change of the main transformer load in real time, dynamically adjust the output parameters of the IGBT power module, and realize accurate output under the working conditions of different capacities and different impedances. The system can monitor the operation temperature of a current rising / boosting module and main transformer load impedance abrupt change in real time, and is combined with traditional overvoltage and overcurrent protection to effectively avoid safety risks caused by too high temperature rise of the system and abnormal abrupt change of the load.

A bidirectional power module packaging structure and packaging method are disclosed. In the structure, a first access terminal is configured as the input terminal of the IGBT power module, and a second access terminal is configured as the output terminal of the IGBT power module. A positive power module is disposed between the first access terminal and the second access terminal, and includes three stacked positive sub-modules connected to the first and second access terminals. A DBC substrate is disposed between the first and second access terminals. A first connection terminal is connected to the first access terminal at one end and to the DBC substrate at the other end. A second connection terminal is connected to the second access terminal at one end and to the DBC substrate at the other end. An IGBT chip is disposed on the upper surface of the DBC substrate, and an FRD chip is disposed on the upper surface of the DBC substrate and arranged at intervals from the IGBT chip. A bonding wire connects the FRD chip and the IGBT chip. A reverse power module is disposed between the first and second access terminals.

The application discloses an automatic double-pulse test system and a test method, which comprise an upper computer unit, a controller unit, a capacitor charging and discharging circuit unit, a load inductor unit, an IGBT power unit and an oscilloscope unit; the upper computer unit is interconnected with the controller unit; the controller unit is interconnected with the IGBT power unit; the control end of the controller unit is connected with the input end of the capacitor charging and discharging circuit unit and the load inductor unit; and the output end of the load inductor unit, the capacitor charging and discharging circuit unit and the oscilloscope unit is connected with the IGBT power unit. The whole operation process can be realized through the upper computer. The controller realizes full-automatic control and electrical isolation of the whole double-pulse test circuit, effectively guarantees test safety, the turn-on and turn-off resistance of the IGBT drive can be adjusted on line, operation is convenient, and test efficiency is greatly improved. The automatic double-pulse test system can meet most IGBT double-pulse test scenes, and can directly test the IGBT power module and the capacitor module by quickly connecting the modules with the system.

The invention relates to the technical field of circuit simulation optimization, in particular to a short circuit reliability optimization method, device and system for a power module and a medium, and the method comprises the steps: obtaining a selected circuit topology, and carrying out the three-dimensional modeling of an IGBT power module in the circuit topology, and obtaining a three-dimensional model; using a finite element simulation tool to perform finite element simulation of the short-circuit current non-uniform mobility on the three-dimensional model to obtain a non-uniform mobility simulation result; determining the temperature rise generated by the IGBT power module at the short circuit moment according to the non-uniform mobility simulation result and the heat capacity of each sub-chip; judging whether the IGBT power module has a short-circuit failure risk or not according to the non-uniform mobility simulation result and the temperature rise, and determining that the three-dimensional model meets the structural design requirement under the condition that the IGBT power module does not have the short-circuit failure risk; according to the method, the product fault problem caused by overhigh local current density can be avoided, the development period is shortened, and the development cost is saved.

The invention belongs to the technical field of test equipment, and discloses IGBT power module test equipment, which comprises a mounting rack, the mounting rack is provided with a detection cavity for placing an IGBT power module, the mounting rack is slidably provided with a lifting plate, the lifting plate is provided with an air exhaust box, the air exhaust box is provided with an air outlet, and the air outlet is provided with an air inlet. An air outlet of the exhaust box corresponds to an air inlet of the IGBT power module to be detected, a cooling mechanism used for supplying air into the exhaust box and a lifting mechanism used for adjusting the height of the lifting plate are arranged on the mounting frame, a clamping mechanism used for fixing the IGBT power module is arranged on the mounting frame, and the clamping mechanism comprises a clamping assembly. According to the IGBT power module cooling device, by improving the prior art, the position of the air outlet of the air exhaust box can be changed by operating the lifting mechanism to adjust the heights of the lifting plate and the air exhaust box, so that cooling operation can be performed on various types of IGBT power modules, and the application range of the device is expanded.

The invention relates to a dual-motor heterogeneous electric drive system for an electric heavy truck and a control method of the dual-motor heterogeneous electric drive system. The dual-motor heterogeneous electric drive system for the electric heavy truck comprises a motor A and a motor controller A. The motor controller A adopts an IGBT power module. A motor B is connected with a motor controller B, and the motor controller B adopts a SiC MOSFET power module; the input end of the power coupling device is respectively connected with the output shaft of the motor A and the output shaft of the motor B, and the power coupling device is used for coupling and outputting the power of the two motors; the power coupling device comprises a first speed reducer in transmission connection with the motor A and a second speed reducer in transmission connection with the motor B; according to the dual-motor heterogeneous electric drive system for the electric heavy truck and the control method of the dual-motor heterogeneous electric drive system, through cooperation of heterogeneous hardware and intelligent control, optimal balance of system efficiency and reliability is achieved at reasonable cost, and the contradiction between cost and endurance in the field of the electric heavy truck is solved. Meanwhile, the system has redundancy capacity, and the vehicle attendance rate is increased.

The utility model provides a radiator structure for a nuclear power station and an IGBT power module, which belong to the technical field of power modules and comprise a shell and a radiating core. One end of the shell is an air inlet, and the other end of the shell is an air outlet; the heat dissipation core is located in the shell and provided with a plurality of flow passing channels distributed at intervals, and all the flow passing channels communicate with the air inlet and the air outlet. The heat dissipation core body is divided into a first part and a second part which are sequentially connected in the airflow flowing direction. And an air guide channel is formed between the first part and the inner wall of the shell, extends to the air inlet, communicates with the flow passing channels and is used for guiding cold air to the second part. According to the utility model, the air guide channel is additionally arranged between the heat dissipation core body and the shell, and the air guide channel can guide cold air to directly lead to the second part, so that the second part can receive sufficient cold air, thereby ensuring that the heat dissipation of the two groups of IGBT elements is uniform, and reducing the temperature rise difference of the two groups of IGBT elements.

The application discloses a methanol gasification device and method. The methanol gasification device comprises a gasification treatment core, a power supply circuit board, an IGBT power module, a temperature sensor arranged at the outlet of the gasification treatment core, and a control circuit board electrically connected with the IGBT power module and the temperature sensor. The control circuit board is used for adjusting the heating power of the gasification treatment core through the IGBT power module according to the deviation between the real-time temperature of the methanol gas and the preset temperature required by the methanol gasification, so that the methanol gas discharged from the outlet of the gasification treatment core is maintained at the preset temperature. The application can maintain the methanol gas discharged from the outlet of the gasification treatment core at the preset temperature, so that the methanol gas with stable pressure is obtained, and the whole realization process is simple, safe and reliable.

The present application relates to a kind of IGBT drive board test system, belong to the test field of IGBT drive board.System includes controller and analog IGBT system, wherein analog IGBT system includes at least one bridge arm simulation module, the bridge arm simulation module includes controllable switch tube, controllable switch tube both ends form the CE interface of analog IGBT, the G interface of the analog IGBT is also included in the analog IGBT system;The C, E, G interface of the analog IGBT is also used to connect the IGBT drive board to be measured;The controller is used to be connected with the IGBT drive board to be measured, and the controller is also used to sample the G, E interface of connection the analog IGBT, and also be used to control the controllable switch tube connected with the controller.This test system of the present application has simple circuit, by setting analog IGBT system, for simulating real IGBT power module, just can realize the drive test and fault protection test of the IGBT drive board to be measured.

An IGBT power module cooling structure of a new energy automobile motor controller relates to the technical field of new energy automobile accessories, and connects water channel structures of three IGBT power modules in series, so that the flow rate of cooling liquid in water channels is higher, the upper and lower water channels are cooled simultaneously, and the cooling effect can be effectively improved. In the IGBT power module cooling structure of the new energy automobile motor controller, cooling liquid enters the lower-layer cooling water channel on the back surface of the IGBT power module cooling structure through the main water inlet channel, enters the upper-layer cooling water channel from the first water inlet, enters the lower-layer cooling water channel from the first water outlet, then enters the upper-layer cooling water channel from the second water inlet, and finally enters the lower-layer cooling water channel from the second water inlet. And the water enters the lower-layer cooling water channel from the second water outlet, then enters the upper-layer cooling water channel from the third water inlet, finally enters the lower-layer cooling water channel from the third water outlet, and finally flows out from the main water outlet channel.

The invention provides a water-based cleaning agent for an IGBT power module and a preparation method of the water-based cleaning agent. The water-based cleaning agent comprises the following components in percentage by mass: 3-10% of a nonionic surfactant, 0.5-2% of a corrosion inhibitor, 1-3% of a chelating agent, 2-10% of a cosolvent, 1-5% of a builder, 0.1-0.5% of a defoaming agent and the balance of deionized water, wherein the total mass fraction is 100%. The prepared water-based cleaning agent has good material compatibility and low-foam property, does not contain halogen, is safe and environment-friendly, can effectively remove pollutants such as soldering flux residues and solder paste residues and remove oxides generated by high-temperature welding, and ensures the performance and long-term reliability of an IGBT power module.

The invention provides an abnormity early warning method and device, equipment and a medium, and relates to the technical field of abnormity early warning. The method comprises: based on a first thermal impedance function and a measured value of a first temperature at each moment in a target time period, determining a predicted junction temperature of an insulated gate bipolar transistor power module at each moment in the target time period; determining a predicted value of a second temperature at each moment in the target time period based on the second thermal impedance function and the predicted junction temperature at each moment in the target time period; and determining an abnormal early warning strategy of the insulated gate bipolar transistor power module based on the deviation between the predicted value of the second temperature at each moment in the target time period and the measured value of the second temperature and the six-frequency harmonic content at each moment in the target time period. According to the abnormity early warning method, the abnormity early warning device, the abnormity early warning equipment and the medium provided by the invention, the accuracy of abnormity early warning of the insulated gate bipolar transistor power module can be improved.

The utility model relates to a low-voltage explosion-proof SVG water-cooling machine core structure, which comprises a water-cooling plate, a capacitor assembly, a rectification part, an inversion part and a master control assembly, and the rectification part and the inversion part are respectively composed of an IGBT power module. The device is characterized in that the input end of the rectification part and the output end of the inversion part are both connected to an under-mine power grid, optical fiber conversion assemblies are arranged above the rectification part and the countercurrent part, and the main control assembly is composed of a bottom plate, a main control board and an optical fiber board, and the main control board is connected with the control ends of the IGBT power modules in the rectification part and the inversion part through the optical fiber board and the optical fiber conversion assembly. According to the low-voltage explosion-proof SVG water-cooling machine core structure, reactive compensation of a power grid under a mine is realized, instantaneous drop of the voltage of the power grid in the starting and stopping process of a coal mine large-scale heading machine is avoided, and normal work of large-scale coal mine mining equipment is ensured.