78 results about "Igbt power modules" patented technology

The invention discloses a self-adaptive nanosecond driving protection method for a high-voltage IGBT power module. The method comprises the steps that data such as high-voltage side voltage, collector current, grid voltage and junction temperature are collected and preprocessed, and standardized feature vectors are obtained; extracting statistical features, frequency domain features and trend features to obtain a comprehensive feature vector; density clustering is carried out based on historical fault data, and an extreme value model is established by using generalized Pareto distribution to generate an optimized threshold value; constructing a time sequence feature matrix, predicting a fault probability by adopting a time sequence convolutional network and a long-short term memory network, and generating a protection strategy parameter; and generating an optimal driving waveform and a control signal, and updating parameters according to an actual response effect. According to the invention, predictive protection and nanosecond-level precise control of faults are realized, and the reliability and performance of the high-voltage IGBT module are remarkably improved.

The invention provides an intelligent temperature field analysis-based heat dissipation optimization method for an IGBT (Insulated Gate Bipolar Translator) power module of an offshore flexible direct current converter valve. According to the method, an IGBT module space temperature data matrix and multi-point temperature sensor data are collected, and filtering processing is carried out through a multi-scale sliding window and a self-adaptive threshold value; establishing a multi-layer thermal network parameter model, and analyzing temperature dynamic change characteristics; layering the feature data according to the thermal response speed, and performing adaptive mapping and weight calculation; establishing a reinforcement learning model based on the heat dissipation efficiency index set to optimize a heat dissipation strategy; and predicting the temperature field distribution by using the graph structure neural network model. Accurate sensing, dynamic characteristic analysis, self-adaptive control and predictive maintenance of the temperature field of the IGBT module are realized, the heat dissipation efficiency and the temperature uniformity are improved, and the service life of equipment is prolonged.

The invention provides an IGBT junction temperature prediction model construction method and system, and relates to the technical field of power electronic device thermal management, and the method comprises the steps: obtaining an initial data set representing the transient thermal response relation between an IGBT chip and an NTC temperature measurement point in an IGBT power module where the IGBT chip is located; training a neural network model based on the initial data set, and learning and representing a nonlinear function relationship between time and thermal impedance; inputting a preset new time sequence into the trained neural network model, and generating a time-continuous and noise-suppressed optimized thermal impedance data set; and based on the data set, performing parameter fitting on a preset lumped parameter thermal network model to identify thermal resistance and thermal capacity parameters of the model so as to complete construction of the junction temperature prediction model. According to the method, the neural network is used as a data optimization tool in a physical model parameter identification process, and accurate and convenient online prediction of the IGBT junction temperature is realized only by using the temperature signal of the NTC temperature measurement point of the module.

The invention belongs to the technical field of power electronics, and provides a portable IGBT power assembly detection device and method, and the device comprises a portable box body, and an adjustable DC power supply, a main control unit, a drive switching unit and an upper computer which are disposed in the portable box body. The adjustable direct-current power supply is used for supplying power to the tested IGBT power assembly; the main control unit is used for generating and sending a PWM driving signal to a tested IGBT power assembly, and obtaining key electrical parameters and temperature data of the tested IGBT power assembly through driving the switching unit. And after a fault signal reported by the detected IGBT power assembly through the driving switching unit is received, the key electrical parameters and / or the temperature data are / is detected to be abnormal, or a control instruction sent by the upper computer is received, the main control unit stops generating the PWM driving signal, and the main control unit is further used for uploading the key electrical parameters, the temperature data and the fault signal to the upper computer. The device is small in size and convenient to carry, and the operation convenience is remarkably improved.

The invention provides a packaging structure and a packaging method for improving the heat dissipation performance of an IGBT power module. The packaging structure comprises a copper substrate, a first epoxy glue layer, an epoxy resin-based composite material layer, a second epoxy glue layer, an upper bridge copper layer, a lower bridge copper layer, a chip solder layer and a power chip which are sequentially arranged from bottom to top, wherein the upper bridge copper layer and the lower bridge copper layer are integrally arranged; the power chip comprises an upper bridge chip and a lower bridge chip; the chip solder layer comprises an upper bridge chip solder layer and a lower bridge chip solder layer; the upper bridge chip solder layer is arranged on the upper bridge copper layer, and the upper bridge chip is arranged on the upper bridge chip solder layer; the lower bridge chip solder layer is arranged on the lower bridge copper layer, and the lower bridge chip is arranged on the lower bridge chip solder layer. According to the packaging structure, the epoxy resin-based composite material layer is adopted as the insulating layer, copper and a welding layer are reduced in heat flow transmission, the heat resistance from the chip to the shell is reduced, and the heat dissipation performance is improved; the copper layers of the upper and lower bridge arms are integrated, leads between the upper and lower bridges are reduced, the power loss of the IGBT is reduced, and the heat is reduced.

Provided is a power conversion device on which an IGBT power module that includes a main IGBT and a current sense IGBT in the same semiconductor chip is mounted, wherein the power conversion device is a high-performance and highly reliable power conversion device capable of accurately estimating a main current flowing through the main IGBT using a sense current in an entire operation region of the power conversion device. A power conversion device includes: a first IGBT through which a main current flows; a second IGBT which is disposed on the same semiconductor substrate as the first IGBT and through which a sense current flows; and a measurement device which calculates the main current based on the sense current, wherein the measurement device selects a method of calculating the main current corresponding to a current value of the sense current.

The invention discloses an active power filter residual life evaluation method, system and device, a medium and a product, and the method comprises the steps: constructing a failure degradation model of a DC side capacitor of an active power filter and a failure degradation model of an IGBT power module through a Wiener process; determining an edge cumulative distribution function of the direct-current side capacitor and an edge cumulative distribution function of the IGBT power module, coupling the edge cumulative distribution function of the direct-current side capacitor and the edge cumulative distribution function of the IGBT power module by using a Copula function, and based on a joint degradation probability distribution model, performing Monte Carlo simulation to obtain a degradation probability distribution model. According to the method, the degradation tracks of the direct current side capacitor and the IGBT power module from the starting moment to the future moment are simulated, and when any one degradation track passes through the failure threshold value, the latest moment is determined as the degradation moment, so that the residual life estimation value of the active power filter is determined, and the precision of residual life estimation is improved.

The application discloses a method for preparing an indium-based soft soldering sheet by vacuum hot pressing, belongs to the technical field of thermal interface materials for chip packaging and IGBT power module welding material preparation, and is characterized in that pure indium powder or indium-tin mixed alloy powder is uniformly laid in a graphite mold, the graphite mold is vibrated or knocked, and the pure indium powder or indium-tin mixed alloy powder is laid flat and densely; the graphite mold is fixed in a vacuum hot pressing machine, a pressure of 10 MPa is applied to the vacuum hot pressing machine, vacuum is drawn to 1*10 ‑3 Pa, a temperature rising rate is controlled to be less than 5 DEG C / min, when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, a pressure maintaining state is kept for 0.5-1 hours, then the mold is cooled to room temperature along with the furnace, the mold is taken out, and a pure indium soldering sheet or an indium-tin-based multi-element alloy soldering sheet is obtained. The method has simple process and low energy consumption, and the performance of the prepared soft thin soldering sheet is obviously improved.

The application provides a kind of IGBT junction temperature prediction model construction method and system, it is related to power electronic device thermal management technical field, method includes: obtaining the initial data set of the transient thermal response relationship between the IGBT chip and the NTC temperature measuring point in the IGBT power module;Based on the initial data set, the neural network model is trained, and the nonlinear function relationship between time and thermal impedance is learned and characterized;The preset new time series is input into the trained neural network model, and the optimized thermal impedance data set with continuous time and noise suppression is generated;Based on the data set, the lumped parameter thermal network model is parameter fitted, to identify its thermal resistance and heat capacity parameters, complete the construction of junction temperature prediction model.The application uses neural network as a data optimization tool in the parameter identification process of physical model, only uses the temperature signal of NTC temperature measuring point provided by the module, realizes the accurate, convenient online prediction of IGBT junction temperature.

A method for preparing an indium-based soft soldering lug through vacuum hot press molding belongs to the technical field of preparation of thermal interface materials for chip packaging and IGBT (insulated gate bipolar transistor) power module welding materials, and comprises the following steps: uniformly paving pure indium powder or indium-tin mixed alloy powder in a graphite mold, and vibrating or knocking the graphite mold to make the pure indium powder or the indium-tin mixed alloy powder flatly and compactly paved; fixing the graphite mold in a vacuum hot press, applying a pressure of 10 MPa to the vacuum hot press, vacuumizing to 1 * 10 <-3 > Pa, and controlling the heating rate within 5 DEG C / min; and when the temperature rises to the melting point of indium or the melting temperature of the indium-tin mixed alloy, keeping a pressurized state and preserving heat for 0.5-1 hour, then cooling the mold to room temperature along with the furnace, and taking out the mold to obtain the pure indium soldering lug or the indium-tin-based multi-component alloy soldering lug. The method is simple in process and low in energy consumption, and the performance of the prepared soft thin soldering lug is remarkably improved.

The utility model provides a silicon carbide and silicon hybrid parallel power module, comprising an IGBT power module group, the IGBT power module group comprises at least one IGBT power module, and the IGBT power module is provided with a DC + terminal, a DC-terminal and an AC terminal; a SiC power module group, the SiC power module group comprising at least one SiC power module, the SiC power module having a DC + terminal, a DC-terminal, a power AC terminal, and a parallel AC terminal; the DC + copper bar is connected with the DC + terminal of each IGBT power module and the DC + terminal of each SiC power module at the same time; the DC-copper bar is connected with the DC-terminal of each IGBT power module and the DC-terminal of each SiC power module at the same time; the power AC copper bar is connected with the AC terminal of each IGBT power module and the power AC terminal of each SiC power module at the same time; and the parallel AC copper bar is connected with the parallel AC terminal of each SiC power module at the same time. According to the utility model, the problem that the existing power module is not satisfactory in comprehensive performance of loss and cost can be solved.

The utility model discloses a power module used for an energy storage inverter, comprising a sheet metal rack, the sheet metal rack is a square frame body, one side surface of the sheet metal rack is provided with a radiator, the radiator is respectively provided with an IGBT power module, a heating resistor, a temperature control switch and a voltage-sharing resistor, and the IGBT power module is respectively connected with a laminated bus, an AC output copper bar and a driving board. According to the utility model, the structure is compact, different severe environments can be adapted under the condition of ensuring high power, and the power density is improved, the load of a single IGBT is reduced and the service life of the IGBT is prolonged through the use of three parallel IGBTs; the voltage equalization of the small laminated busbar is realized through the voltage equalizing resistor, and the anti-interference capability of the small laminated busbar is enhanced; through a temperature control switch and a heating resistor, the functions of moisture-proof heating dehumidification, low-temperature starting heating and the like are achieved; through the low-inductance design of the laminated busbar, the IGBT voltage spike is reduced, and the operation reliability of the device is improved.

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) power module and power equipment with the same. The IGBT power module comprises a chip; the lining plate is attached to the chip, and a high-temperature solder layer is arranged between the chip and the lining plate; the substrate is arranged on the side, away from the chip, of the lining plate, a low-temperature solder layer is arranged between the lining plate and the substrate, the melting point of the high-temperature solder layer is larger than that of the low-temperature solder layer, and the high-temperature solder layer and the low-temperature solder layer are made of lead-free solder. According to the IGBT power module provided by the utility model, the high-temperature solder layer and the low-temperature solder layer which are different in melting point and free of lead are adopted, so that when the substrate and the lining plate are welded, the welded high-temperature solder layer between the chip and the lining plate cannot be preheated and melted again, the quality and the yield of the IGBT power module are improved, and the production cost is reduced. And meanwhile, the low-temperature solder layer and the high-temperature solder layer do not generate toxic gas in the heating process, so that the harm to human bodies and the environment is avoided.

The invention discloses a current-sharing copper bar structure and an IGBT power module, the current-sharing copper bar structure comprises a first copper bar layer, a second copper bar layer and a third copper bar layer which are sequentially stacked from top to bottom in the vertical direction, and the extension direction of each copper bar layer is parallel to the horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar which are arranged left and right along the horizontal direction of the copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar which are arranged left and right along the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar which are arranged left and right along the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are of nonlinear bent structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are of linear strip structures with the same plane shape and plane size. According to the invention, the current-sharing deviation of the parallel modules can be greatly reduced, and the power balance requirements of a three-level ANPC architecture in the scenes of photovoltaic, wind power generation and the like can be met.

The utility model relates to the technical field of IGBT type power converters and heat dissipation devices, and discloses an IGBT type power converter water-cooling heat dissipation device which comprises a water-cooling heat dissipation device, the top of the water-cooling heat dissipation device is fixedly connected with an IGBT power module, the top of the water-cooling heat dissipation device is provided with an NTC temperature measurement resistor, the NTC temperature measurement resistor is located below the IGBT power module, and the NTC temperature measurement resistor is located below the IGBT power module. A laminated busbar is installed on the side face of the water-cooled radiator, and a supporting capacitor is installed below the laminated busbar. According to the water-cooling heat dissipation device of the IGBT type power supply converter, the NTC temperature measurement resistor is pre-embedded at the position where the IGBT power module is installed, so that the NTC temperature measurement resistor can directly measure the shell temperature of the IGBT power module, and the problem that the shell temperature of part of IGBT power modules cannot be directly measured due to insulation treatment of installation holes is solved; and the NTC temperature measurement resistor is directly pre-embedded in the heat source area of the IGBT power module, so that the temperature measurement accuracy is prevented from being influenced by temperature gradient distribution on the shell and the radiator of the IGBT power module, and the effect of improving the temperature measurement accuracy is achieved.

A method for calculating the cumulative damage degree of an IGBT power module in an electric vehicle, which relates to a method for digital calculation specifically applicable to a specific application, is a method for calculating the cumulative damage degree of an IGBT power module in an electric vehicle based on an improved Manson model. The steps are as follows: Obtain the basic parameters and driving conditions of the electric vehicle, the parameters of the permanent magnet synchronous motor, and the parameters of the IGBT power module; Obtain the junction temperature-time curve data of the IGBT power module, preprocess the junction temperature-time curve data, and establish a time series of peak and valley values of the junction temperature; Based on the rain flow counting method, process the time series of peak and valley values of the junction temperature to establish a junction temperature load spectrum; The LESIT model can be used to calculate the cyclic life of the IGBT power module under constant amplitude load; Establish an improved Manson model to calculate the cumulative damage degree of the IGBT power module under random variable amplitude load. The present invention does not require parameters determined by the physical characteristics of devices (such as IGBT power modules) obtained by fitting a large amount of experimental data. The mathematical formula only contains the load cyclic life, which is more easily implemented in actual engineering; The influence of the load size is added to the calculation process, and the interaction between adjacent loads is considered, making up for the deficiency in the accuracy of the calculation result of the total damage degree of the IGBT power module in the existing method, which cannot more conform to the cumulative process of fatigue damage in the actual working condition.

The invention relates to the technical field of power electronics, and discloses an IGBT (Insulated Gate Bipolar Translator) fixed-frequency voltage-regulating constant-current energy-saving device, which comprises a power supply module, an IGBT power module, a current sampling module, a driving module, a control module, a motor and a voltage acquisition module, the current sampling module is connected in series between the IGBT power module and a load, collects load current in real time and outputs a current feedback signal, and the driving module is used for outputting a driving signal with dead time to the IGBT power module. According to the invention, the effects that the dead time of the driving module is not fixed, the dynamic change of the load current is adapted and the energy-saving effect and the device stability are not influenced are realized, and the problems that the dead time of the driving module is fixed, the dynamic change of the load current cannot be adapted, the switching loss or the commutation peak is easy to generate and the power consumption is low in the prior art are solved. And the energy-saving effect and the stability of the device are influenced.

The invention relates to a displacement imaging system suitable for semiconductor IGBT power module detection, which comprises a camera, a lens, a coaxial illumination module, an execution mechanism, an image processing module and a control module, and is characterized in that the execution mechanism drives the lens to reciprocate up and down in a direction vertical to an IGBT module; the control module controls the execution mechanism to drive the lens to move up and down and controls the camera to shoot images. And the image processing module is used for calculating the sharpness of different image areas of each image, performing height mapping according to the height of the sharpness of the image areas to obtain a height map, and using the gray value of the clearest image in the area as the gray value of the full-clear image in the same area to finally obtain the final full-clear image. According to the method, the height information of each point on the surface of the IGBT module can be accurately obtained to generate the height map, so that quantitative detection of three-dimensional shape parameters such as the height of the aluminum wire is realized, and the visibility and detectability of defects are greatly improved.

The application discloses a kind of estimating the temperature of motor controller cooling fluid of vehicle, estimating the temperature of motor controller cooling fluid of vehicle method includes: the maximum sampling temperature is detected by the temperature sensor inside IGBT power module;According to the current working state information of motor controller, the loss of the IGBT power module is calculated;According to the maximum sampling temperature, the loss of the IGBT power module and the thermal resistance parameter of the temperature sensor inside the IGBT power module, determine cooling fluid temperature.The application can obtain the temperature of cooling fluid by simple calculation, and the calculation is small, and simple to realize.

The utility model discloses a mixed state mode control system, which relates to the technical field of motor drive control systems and comprises an aluminum shell film capacitor, a radiator, an insulating support, an insulated gate bipolar transistor (IGBT) power module, a silicon carbide (SiC) power module and an integrated drive control board. The IGBT power module and the SiC power module are mounted above the radiator through the insulating support, different module mixed-state layout modes are adopted, meanwhile, different direct connection mutual welding processes are adopted, the structure arrangement is more compact, and the structure is more compact. The IGBT module has the technical characteristics of small size, light weight, high reliability, high working efficiency compared with a full IGBT module, greatly reduced cost compared with a full SiC module and the like, meanwhile, the design omits the traditional bolt connection and wiring harness connection, is simpler and more convenient to assemble, is suitable for automatic batch manufacturing, and provides a process basis for higher-automation-degree assembly.

The application discloses a current-sharing copper bar structure and an IGBT power module, which comprises a first copper bar layer, a second copper bar layer and a third copper bar layer stacked in sequence from top to bottom in a vertical direction, and the extension direction of each copper bar layer is parallel to a horizontal direction; the first copper bar layer comprises a first copper bar and a second copper bar arranged left and right in a horizontal direction of a copper bar plane, the second copper bar layer comprises a third copper bar and a fourth copper bar arranged left and right in the horizontal direction of the copper bar plane, and the third copper bar layer comprises a fifth copper bar and a sixth copper bar arranged left and right in the horizontal direction of the copper bar plane; the second copper bar, the third copper bar, the fifth copper bar and the sixth copper bar are non-linear bending structures with the same plane shape and plane size, and the first copper bar and the fourth copper bar are one-word long strip structures with the same plane shape and plane size. The application can greatly reduce the current-sharing deviation of parallel modules and adapt to the power balance demand of a three-level ANPC architecture in photovoltaic, wind power and other scenes.

The invention provides an abnormity monitoring method and device for an IGBT power module, and relates to the technical field of energy storage equipment. The method comprises the steps that multi-source operation data of an IGBT power module are acquired according to a key feature subset, and the key feature subset is a data category which is screened out by performing feature importance analysis on the operation data of the IGBT power module and has high junction temperature prediction contribution degree on the IGBT power module; based on the multi-source operation data and the junction temperature sequence within the preset duration, performing junction temperature prediction of the IGBT power module to obtain a junction temperature prediction value; and monitoring whether the IGBT power module operates abnormally or not according to the junction temperature predicted value. According to the invention, accurate early warning can be carried out on abnormal operation of the IGBT power module.

The invention discloses an IGBT power module temperature state evaluation method and device based on multi-condition physical parameter and neural network fusion, and relates to the technical field of direct current transmission protection. Compared with a traditional experimental method, the method can overcome the defect that temperature distribution on the surface of the chip cannot be directly measured in an experiment, and compared with traditional finite element simulation, temperature distribution can be rapidly predicted, traditional prediction efficiency is greatly improved, blank parameters under non-convergent working conditions in finite element simulation are made up, and the method is suitable for large-scale popularization and application. And the temperature state of the IGBT high-power device can be evaluated more comprehensively. Meanwhile, a condition generation framework is used, a temperature distribution prediction model is developed through a convolutional neural network, and compared with a traditional condition generation adversarial model and a condition variation auto-encoder method, structural complexity can be avoided, training stability can be improved, and prediction precision is guaranteed in combination with physical constraints.

The utility model discloses a die-casting box body radiator, inverter and photovoltaic system, the die-casting box body radiator (100) comprises a substrate (10) and a first boss (30), the substrate (10) is provided with an IGBT power module (20), one side of the IGBT power module (20) is arranged in the substrate (10), the other side of the IGBT power module (20) is attached to the substrate (20), the first boss (30) has a first thickness, the first boss (30) is arranged on the substrate (10) corresponding to the IGBT power module (20), and the first boss (30) is provided with a second thickness. The IGBT power module (20) is lifted by the first boss (30), the thickness of the position, where the IGBT power module (20) is located, of the substrate (10) is increased, heat generated when the IGBT power module (20) works is better dissipated, and the substrate (10) and the first boss (30) are integrally formed in a die-casting mode. According to the utility model, the characteristics of small volume and portability of a die-casting box body radiator are maintained, the radiating effect is optimal, the cost is lower, and the radiator is more competitive.

The invention relates to the technical field of converter stations, and discloses a converter station DC signal large current injection control method and system, and a storage medium. The method is based on a plurality of test current generators distributed in a converter station, each generator comprises a direct current source, an LED light source, a light guide module, a low-voltage photovoltaic module and a current sampling module, and the method comprises the following steps: outputting background current when the direct current source is not started; the LED is driven in response to the starting instruction, and light is transmitted to the low-voltage photovoltaic module through the light guide module; collecting the first current, calculating the difference between the first current and the reference current, and adjusting the output power of the current source in a negative correlation manner; the light guide amount is adjusted with different coefficients according to whether the background current is within the first range. The method replaces a large-current IGBT power module to reduce the cost, and can accurately match the impedance of a tested point, restore a complex fault current environment, improve the precision and stability of a test current, effectively check hidden dangers, and guarantee the reliability of the whole group of DC protection tests.

The invention discloses a method for evaluating the life of a motor controller, which includes the following steps: S1, estimating the junction temperature of an IGBT power module; S2, uploading the estimated junction temperature to a new energy vehicle big data platform; S3, obtaining the number of power cycles through classification and statistical processing; S4, substituting the Arrhenius life model formula to obtain the number of failure power cycles; S5, calculating the current life of the motor controller D based on the Miner fatigue damage accumulation method; S6, judging whether the difference between the current life of the motor controller D and the life of the last calculation cycle D' is greater than the update frequency D0, if D-D'≥D0, updating and correcting the junction temperature value, and returning to S1 for a new round of motor controller life evaluation; if D-D'<D0, using the current life of the motor controller obtained in S5 as the motor controller life evaluation value. By introducing the life attenuation factor, the IGBT junction temperature can be estimated more accurately, iterated with the life evaluation, and better fault warning and safety monitoring can be implemented for new energy vehicles.

The invention belongs to the technical field of motor driving, and particularly relates to an energy feedback control system of a permanent magnet synchronous motor. The objective of the invention is to solve the technical problems that dynamic decoupling cannot be carried out and energy feedback efficiency is reduced in the control process of an energy feedback control method driven by a super capacitor. Comprising a permanent magnet synchronous motor used for generating three-phase alternating current as a generator in a braking mode; the pulse width modulation rectifier is used for rectifying the three-phase alternating current into direct current; wherein the pulse width modulation rectifier comprises an IGBT (Insulated Gate Bipolar Translator) power module; the double closed-loop control module is used for generating a space vector pulse width modulation signal according to the bus voltage of the power battery and the current signal of the permanent magnet synchronous motor; wherein the space vector pulse width modulation signal is used for adjusting direct current output by the IGBT power module; and the power battery is used for absorbing the direct current output by the pulse width modulation rectifier and converting the direct current into chemical energy for storage.

The utility model relates to the technical field of power modules, in particular to an IGBT power module signal transmission circuit, which comprises a main control chip, an isolation circuit, a push-pull circuit, an IGBT power module and a protection circuit, the main control chip, the isolation circuit, the push-pull circuit and the IGBT power module are electrically connected in sequence, an input end of the isolation circuit is connected with a PWM signal output by the main control chip, and an output end of the protection circuit is connected with the IGBT power module. The protection circuit comprises a sampling circuit and an analog-to-digital conversion chip which are electrically connected. An output port of the analog-to-digital conversion chip is connected with an input port of the main control chip. According to the utility model, the isolation circuit isolates a front-stage circuit and a rear-stage circuit, so that the stability and the reliability are improved, the push-pull circuit can accelerate the switching speed and improve the working efficiency and the response speed, the working data of the IGBT power module are obtained through the sampling circuit and the analog-to-digital conversion chip, and when the IGBT power module goes wrong, the main control chip timely turns off the IGBT power module, so that the IGBT power module is protected. The fault risk is reduced.

The utility model discloses an IGBT power module shell temperature measuring device, and relates to the technical field of temperature detection. The utility model provides an IGBT power module shell temperature measuring device which comprises a heating box and a heat dissipation jig arranged in the heating box. The heat dissipation jig is used for arranging an IGBT power module. The heat dissipation jig is provided with at least one hole, the hole is used for inserting a thermocouple wire, and the end part, far away from the heat dissipation jig, of the thermocouple wire is connected with temperature measuring equipment; the system also comprises two source meters, and the two source meters are respectively connected with the I-GBT power module. The heating box can be heated to a preset temperature, one source meter is used for inputting a preset power supply to the IGBT power module, and the other source meter is used for measuring a voltage value of the IGBT power module at the preset temperature. According to the device, the voltage value and the shell temperature value of the IGBT power module under the preset temperature and the preset current are rapidly and efficiently measured in a heat transfer mode, so that the junction temperature of the IGBT power module can be obtained through subsequent calculation.

The invention relates to the technical field of power electronic device state monitoring and failure discrimination, and discloses an IGBT failure discrimination method and system based on temperature and voltage multi-mode fusion, a medium and equipment, and the method comprises the steps: synchronously collecting a voltage signal and a temperature signal in an IGBT operation process; the temperature signal comprises junction temperature data reflecting the overall thermal state of the chip and an infrared temperature image reflecting the spatial distribution of a surface temperature field of the IGBT power module; performing time sequence feature extraction on the voltage signal to obtain a voltage modal feature used for representing the electrical degradation characteristic of the IGBT; joint modeling is carried out on the junction temperature data and the infrared temperature image, and temperature modal characteristics used for comprehensively representing IGBT thermal state time evolution characteristics and spatial distribution characteristics are constructed; fusing the voltage modal features and the temperature modal features in a feature layer, and constructing multi-modal fusion features; and based on the multi-modal fusion features, identifying the failure state of the IGBT through a failure discrimination model.