IGBT (Insulated Gate Bipolar Transistor) power module specific to electromobile

A technology for power modules and electric vehicles, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of low power density, weak vibration resistance, and poor reliability of IGBT modules, and achieve high power density, high reliability, Effect of High Heat Dissipation Efficiency

Inactive Publication Date: 2012-10-17
嘉兴斯达微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problems of low power density, poor reliability and weak vibration resistance of existing IGBT modules.

Method used

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  • IGBT (Insulated Gate Bipolar Transistor) power module specific to electromobile
  • IGBT (Insulated Gate Bipolar Transistor) power module specific to electromobile

Examples

Experimental program
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Embodiment Construction

[0010] The present invention will be further described below in conjunction with the drawings and specific embodiments.

[0011] As shown in the figure, the present invention includes an IGBT chip 1, a diode chip 2, an insulating ceramic substrate 3, a power terminal 5, a signal terminal 6, a plastic case 7 and a liquid cooling heat sink 4. The metal layers on both sides of the insulating ceramic substrate 3 are copper material layers or aluminum material layers, and nickel material is plated on the surface of the metal layer. The IGBT chip 1 and the diode chip 2 are soldered on the insulating ceramic substrate 3 using silver sintering technology. The silver has a melting point of 961 degrees, which greatly improves the fatigue resistance of soldering. The power terminal 5 and the signal terminal 6 are ultrasonically welded on the metal layer of the insulating ceramic substrate 3.

[0012] The insulating ceramic substrate 3 is soldered to the liquid-cooled radiator 4 by soldering....

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PUM

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Transistor) power module specific to an electromobile. The IGBT power module comprises an IGBT chip, a diode chip, an insulating ceramic substrate, a power terminal, a signal terminal plastic shell and a liquid-cooling heat radiator, and is characterized in that metal layers at two sides of the insulating ceramic substrate are copper material layers or aluminum material layers, the surfaces of the metal layers are alternatively plated with nickel materials; the IGBT chip and the diode chip are sintered and welded on the insulating ceramic substrate through silver paste; and the power terminal and the signal terminal are ultrasonically welded on the metal layers of the insulating ceramic substrate. The IGBT power module disclosed by the invention is suitable for electromotor controllers of electromoibles.

Description

Technical field [0001] The invention relates to an IGBT module applied to a power motor controller of an electric vehicle. The main function of the module is to control the amplitude, phase and frequency of the current and voltage of the driving motor to achieve accurate control of the vehicle's mobility. Background technique [0002] At present, due to the impact of energy shortage, energy-saving and environmentally friendly electric vehicles and hybrid vehicles have become the development trend of the automotive industry. The core components of electric vehicles are the battery, motor and electronic control device, while the IGBT module is the core component of the electronic control device, which converts the DC power stored in the battery into AC power with adjustable amplitude, phase and frequency. It plays an extremely important role in the conversion and utilization of electric energy. [0003] The main requirements for IGBT modules used in electric vehicle electronic contr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/11H01L23/473
CPCH01L2224/48137H01L2224/45147H01L2924/01047H01L2924/1305H01L2924/13055H01L2924/00H01L2924/00014
Inventor 刘志宏汪水明姚礼军金晓行
Owner 嘉兴斯达微电子有限公司
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