Temperature calibrating apparatus for IGBT power module chip and temperature correction method thereof

A technology of power module and calibration device, applied in thermometers, measuring devices, thermometer testing/calibration, etc., can solve problems such as adverse effects of computing resources, consumption of computing resources, etc., to achieve real-time working results and eliminate losses

Active Publication Date: 2016-09-07
BINZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent ZL201110038568.9 describes an IGBT junction temperature detection device and its method. By setting the test device to test the IGBT operating frequency and operating current, and then calculating the IGBT junction temperature based on a mathematical model, accurate monitoring of the IGBT junction temperature is realized. This method consumes computing resources, which has a negative impact on the limited computing resources of the automotive inverter system

Method used

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  • Temperature calibrating apparatus for IGBT power module chip and temperature correction method thereof
  • Temperature calibrating apparatus for IGBT power module chip and temperature correction method thereof
  • Temperature calibrating apparatus for IGBT power module chip and temperature correction method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Including an IGBT power module, the IGBT power module 1 includes an IGBT chip 8, a diode chip 9 and an NTC thermistor 10; the IGBT chip 8, the diode chip 9 and the NTC thermistor 10 are respectively fixed on the heat dissipation base 7 by soldering 11 Above; the lower end of the IGBT chip 8 and the diode chip 9 is provided with a cloth sensor through hole 12 longitudinally penetrating the heat dissipation substrate 7; the connection between the IGBT chip 8 and the diode chip 9 and the cloth sensor through hole 12 is respectively provided with a temperature sensor 13; The IGBT power module 1 is connected to the load 2 , the driver 3 and the data acquisition instrument 4 respectively; the driver 3 and the data acquisition instrument 4 are respectively connected to the upper computer 5 ; the driver 3 is connected to the power supply 6 . The above-mentioned heat dissipation base 7 includes a copper substrate 14, the lower surface of the copper substrate 14 is provided with a...

Embodiment 2

[0039] Through the device described in Embodiment 1, the chip temperature of the IGBT power module is corrected.

[0040] Under certain test conditions, such as a certain power supply voltage, a certain ambient temperature, etc., and under certain control of the upper computer 5, such as a certain control frequency, a certain modulation mode, etc., perform temperature calibration. Modulation mode, under the control frequency of 10K, record the NTC temperature of the IGBT power module 1 under the different phase output current of the inverter, the temperature sensor 13 collects the temperature of the IGBT chip 8 and the temperature sensor 13 collects the temperature of the diode chip 9; the collected IGBT chip The temperature calibration data MAP is formed by the NTC acquisition temperature of the module corresponding to the junction temperature of the diode chip.

Embodiment 3

[0042] Replace the power supply voltage, repeat the test steps described in Example 2, and form the data MAP of NTC temperature and chip temperature under different power supply voltages. In the same way, the data MAP of NTC temperature and chip temperature can be formed under different control frequencies, which can be designed according to the actual application.

[0043] In practical applications, the inverter directly collects the temperature of the NTC in the IGBT power module 1, and the overtemperature junction temperature of the IGBT chip 8 and the diode chip 9 is obtained by looking up the calibrated temperature data MAP.

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Abstract

The invention relates to the technical field of temperature detection, specifically to a temperature calibrating apparatus for an IGBT power module chip and a temperature correction method thereof. The temperature calibrating apparatus comprises an IGBT power module including an IGBT chip, a diode chip, an NTC and a heat radiation substrate, wherein temperature sensors are arranged on the lower ends of the IGBT chip and the diode chip, and the IGBT power module is respectively connected with a load, a driver and a data acquisition instrument. The driver and the data acquisition instrument are respectively connected with a host computer, and the driver is connected with a power supply. The acquired temperature is compared with the temperature measured by NTC, temperature correction curves MAP for the IGBT chip and the diode chip are formed based on NTC temperature. Operation junction temperature of the IGBT chip and the diode chip is monitored by checking a table by using real-time monitored NTC temperature and calibrated temperature MAP. Rapid, accurate and real-time operation junction temperature detection can be achieved without consuming calculating resources of a driving system.

Description

(1) Technical field [0001] The invention relates to the technical field of temperature detection, in particular to an IGBT power module chip temperature calibration device and a temperature correction method thereof. (2) Background technology [0002] Facing the increasingly depleted oil resources and the huge pressure of environmental protection, new energy vehicles have shown great advantages and broad development prospects. [0003] The rapid development of new energy vehicles has driven the rapid application of IGBT power modules for vehicles. IGBT power modules for vehicles are IGBT integrated devices with a certain topology. The circuit topology of this integrated device is usually a single-switch discrete module, a double-switch Half-bridge module, six-switch full-bridge module, etc., each switch includes an IGBT chip and an anti-parallel diode chip. The junction temperature of the IGBT chip and diode chip in the module is an important parameter in the application. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K15/00
CPCG01K15/005
Inventor 于海芳
Owner BINZHOU UNIV
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