MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrated with PiN structure temperature sensor and preparation method of MOSFET device

Abstract

The invention relates to an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrated with a PiN structure temperature sensor and a preparation method of the MOSFET device. The method comprises the following steps: selecting an N-type substrate layer; forming an N-type epitaxial layer on the N-type substrate layer; forming P well injection regions on the inner surfaces of the two ends of the N-type epitaxial layer; forming an N + injection region on the inner surface of the P well injection region; forming a P + injection region on the inner surface of the P well injection region, and forming a P region on the inner surface of the N-type epitaxial layer; forming a first gate oxide layer and a second gate oxide layer on a part of the N-type epitaxial layer, a part of the P well injection region and a part of the N + injection region; forming a source electrode on the P + injection region and a part of the N + injection region; forming a drain electrode on the lower surface of the N-type substrate layer; forming a composite metal layer on the P region; and forming a gate on the first gate oxide layer and the second gate oxide layer. The temperature sensor with the PiN structure can monitor thermal characteristics such as thermal distribution and junction temperature in an MOSFET device body in real time by testing the change of current, so as to guide the change of the working state of the device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a MOSFET device integrating a PiN structure temperature sensor and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) has become one of the most advantageous semiconductor materials for manufacturing high-temperature, high-power electronic devices due to its excellent physical, chemical and electrical properties, and has a power device quality factor much greater than that of Si materials. The research and development of SiCMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) power devices began in the 1990s. It has a series of advantages such as high input impedance, fast switching speed, high operating frequency, and high temperature and high pressure resistance. , has been widely used in switching regulated power supply, high-frequency heating, automotive electronics and power amplif...

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Problems solved by technology

[0004] However, in conventional 4H-SiC power MOSFET devices with traditional structures, there is no such internal monitoring device, and the internal thermal characteristics of the device cannot be accurately obtained by using external devices

This will lead to the deterioration of the characteristics of the device when it works at high temperature, thus affecting the application reliability of the device

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