High-power flip LED chip with temperature monitoring function and preparation method thereof

Abstract

The invention provides a high-power flip LED chip with a temperature monitoring function. The high-power flip LED chip comprises a substrate layer, wherein an N-GaN layer, a quantum well layer and a P-GaN layer sequentially grow on the substrate layer; a reflecting layer is arranged on the P-GaN layer; the quantum well layer, the P-GaN layer and the reflecting layer are coated with a first insulating layer; an interconnection electrode layer is arranged on the first insulating layer; the interconnection electrode layer penetrates through the first insulating layer and is connected with the reflecting layer and the N-GaN layer; the interconnection electrode layer is coated with the second insulating layer; an extraction electrode layer is arranged on the second insulating layer; the extraction electrode layer comprises two bonding pad electrodes which penetrate through the second insulating layer and are connected with the interconnection electrode layer, and two thermal resistance monitoring electrodes which penetrate through the second insulating layer, the interconnection electrode layer, the first insulating layer, the reflecting layer, the P-GaN layer and the quantum well layerare connected with the N-GaN layer; and temperature detection nodes are formed at the joints of the two thermal resistance monitoring electrodes and the N-GaN layer. According to the invention, real-time monitoring of the junction temperature of the LED chip is realized.

Description

technical field [0001] The invention relates to an LED chip, in particular to a high-power flip-chip LED chip with temperature monitoring and a preparation method thereof. Background technique [0002] In the application scenario of ultra-high-power LED light source, due to its high-density integration characteristics, it is impossible to effectively judge whether there is a local overheating problem only by monitoring the temperature of the light source substrate and the lamp housing. [0003] Local overheating often leads to failure of one or more LED chips. Contents of the invention [0004] The object of the present invention is to overcome the deficiencies in the prior art, to provide a high-power flip-chip LED chip with temperature monitoring, and a preparation method. A temperature probe for monitoring the junction temperature of the chip is set in the center of the high-power LED chip. section, in order to realize the real-time monitoring of LED chip junction temp...

AI Technical Summary

Problems solved by technology

[0002] In the application scenario of ultra-high-power LED light source, due to its high-density integration characteristics, it is impossible to effectively judge whether there is a local overheating problem only by monitoring the temperature of the light source substrate and the lamp housing.

[0003] Local overheating often leads to failure of one or more LED chips

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