Method for monitoring online condition of IGBT module bonding wire

A bonding wire and state technology, applied in the fields of power electronics and electronic information science, can solve the problems of low precision, not describing the measurement of the collector-emitter voltage drop value of the IGBT module, and not considering the change of the working conditions of the IGBT.
CN110221189AActive Publication Date: 2019-09-10HEFEI UNIV OF TECH

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
HEFEI UNIV OF TECH
Publication Date
2019-09-10

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Abstract

A method for monitoring online condition of an IGBT module bonding wire comprises the following steps of step 1, building a full-bridge inverter circuit and a VCE online measurement circuit, and connecting both input terminals of the VCE online measurement circuit to the collector and emitter of the IGBT power module of the full-bridge inverter circuit to realize the connection between the full-bridge inverter circuit and the VCE online measurement circuit; step 2, establishing a three-dimensional data model of the healthy IGBT; step 3, establishing an IGBT three-dimensional data model of thebond wire break; step 4, optimizing the least squares support vector machine by a genetic algorithm; and step 5, using the optimized least squares support vector machine to evaluate the state of the 3D data model obtained in the steps 2 and 3. The method provided by the invention closely links the online monitoring and state evaluation, and helps to improve the health management mechanism of the IGBT module bonding wire.
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Description

technical field

[0001] The invention relates to the fields of power electronics and electronic information science, in particular to a method for online state monitoring of IGBT module bonding wires, which utilizes a genetic algorithm to optimize the least squares support vector machine to evaluate the health of the IGBT bonding wires. Background technique

[0002] Power converters are widely used in the fields of smart grid, rail transit and new energy, and the insulated gate bipolar transistor (IGBT) is the core device of the power converter, and its reliability is the guarantee for the safe operation of the system. Therefore, the IGBT On-line monitoring and status assessment are extremely important. Solder layer fatigue and bond wire detachment are the two main failure modes of IGBTs. Due to the continuous improvement of solder layer technology, IGBT module bond wire failure has received extensive attention.

[0003] The patent application document with the application n...

Claims

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