Planar
power module (200), comprising: a first substrate (40); a second substrate (140) arranged parallel to the first substrate (40), wherein the first substrate (40) and the second substrate (140) each have a
dielectric layer (42, 142) arranged between two conductive
layers (44A, 44B, 144A, 144B) such that one of the two conductive
layers (44B, 144A) of both the first substrate (40) and the second substrate (140) together form parallel outer conductive surfaces (41, 141) of the
power module (200);
Direct current rails (DC rails) (28);
Alternating current busbars (AC busbars) (30); a plurality of
semiconductor switching chips (22) arranged between the first substrate (40) and the second substrate (140) and electrically connected to the DC rails (28) and the AC rails (30), each of the
semiconductor switching chips (22) being electrically connected to a conductive layer (44B) of the first substrate (40) and a conductive layer (144B) of the second substrate (140); a
polymer molding compound (48) surrounding the edges of the first substrate (40), the second substrate (140) and the plurality of
semiconductor switching chips (22), wherein the
power module (200) is configured as a full-bridge
inverter circuit; and at least one temperature sensor (34) connected to one of the two conductive
layers (44A, 44B) of the first substrate (40) and / or one of the two conductive layers (144A, 144B) of the second substrate (140); wherein the at least one temperature sensor (34) comprises a first temperature sensor (34) connected to a first of the parallel external conductive surfaces (41, 141) and a second temperature sensor (34) connected to a second of the parallel external conductive surfaces (41, 141).