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Failure mode detection and protection system and method of insulated gate bipolar transistor

A bipolar transistor and failure mode technology, applied in bipolar transistor testing, single semiconductor device testing, electrical measurement, etc., can solve abnormal operation of IGBT strings, affect the robustness and reliability of IGBT strings, and damage to IGBT phase bridges, etc. question

Active Publication Date: 2014-12-24
通用电气电网解决方案有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In multiple IGBTs connected in series, the failure of any one IGBT may cause abnormal operation of the entire IGBT string, and what is worse, may also cause damage to the entire IGBT phase bridge
For example, the failure of any one of the multiple IGBTs in series may cause potential imbalance, which affects the robustness and reliability of the entire IGBT string

Method used

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  • Failure mode detection and protection system and method of insulated gate bipolar transistor
  • Failure mode detection and protection system and method of insulated gate bipolar transistor
  • Failure mode detection and protection system and method of insulated gate bipolar transistor

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Embodiment Construction

[0016] In order to ensure the mean time between failures (MTBF), it is very important to monitor and protect the failure mode of the medium voltage drive system. Since the medium voltage transmission system usually includes one or more insulated gate bipolar transistors (insulated gate bipolar transistor, IGBT), therefore, a failure mode detection and protection unit / method is provided for one or more IGBTs in order to quickly and accurately It is also important to accurately determine the fault location and fault type.

[0017] An embodiment of the present invention provides an assembly comprising one or more IGBTs connected in series, wherein each IGBT is connected to a gate driver for receiving a gate signal to drive the IGBT and providing a feedback signal for the IGBT, In addition, each IGBT is also equipped with a failure mode detection unit. Through programming, the failure mode detection unit can determine whether the corresponding IGBT fails and the type of the failu...

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Abstract

The invention relates to a component comprising an insulated gate bipolar transistor (IGBT). The IGBT is connected with a gate driver, and the gate driver is used for receiving a gating signal for driving the IGBT, and providing a feedback signal of the IGBT. The feedback signal reflects the changes of the voltage from a collector electrode to an emitting electrode of the IGBT. The component further comprises a failure mode detection unit which is used for judging whether the IGBT fails or not based on the time sequence of the gating signal and the feedback signal and differentiating the failures including gate driver failures, turning-on failure failures, short-circuit failures, turning-on overvoltage failures and turning-off overvoltage failures.

Description

technical field [0001] The invention relates to a system and method for detecting and protecting failure modes of an insulated gate bipolar transistor (IGBT). Background technique [0002] An IGBT is a switching transistor that allows power flow in the on state and blocks power flow in the off state. The IGBT is a solid-state device with no moving parts. It does not switch by opening and closing a physical connection, but by applying a certain voltage to the semiconductor element to make it change polarity to achieve the function of establishing or breaking the electrical connection. . Under predetermined conditions, IGBTs are commonly used as switching elements in relays and frequency converters to control and convert electrical energy by turning on and off electronic devices. [0003] IGBTs can be used alone or in series. As a simple and straightforward approach, series-operated IGBTs are commonly used in high-voltage power conversion. Among multiple IGBTs connected in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCH02M1/088H02M1/32H03K17/0828H03K17/10H03K17/18H01L2221/00H01L21/00G09G2230/00G01R31/261G01R31/2612G01R31/2614
Inventor 吴涛
Owner 通用电气电网解决方案有限责任公司
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