Online monitoring method for degradation of insulated gate bipolar transistor

A bipolar transistor and insulated gate technology, which is applied in the field of online monitoring of the degradation of insulated gate bipolar transistors, can solve the problems of degradation, the influence of load current changes, and the inability to measure the degradation index online.

Active Publication Date: 2016-11-16
ZHEJIANG UNIV +1
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Problems solved by technology

Due to the difference in the coefficient of thermal expansion (Coefficient of Thermal Expansion, CTE) of each component material that makes up the IGBT package structure, the contact surface between the various component materials of the IGBT is subjected to repeated mechanical stresses due to repeated changes in temperature during the power cycle. stress, thereby

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  • Online monitoring method for degradation of insulated gate bipolar transistor
  • Online monitoring method for degradation of insulated gate bipolar transistor
  • Online monitoring method for degradation of insulated gate bipolar transistor

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Embodiment Construction

[0052] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0053] The insulated gate bipolar transistor of model IKP01N120H2 is used as the IGBT to be tested, and the figure 1 Experiments were performed with the setup shown. The process of implementing the online monitoring method is as follows:

[0054] (1) Set the attached figure 1 The parameters of the main power supply and digital signal processor in the test set the current of repeated impact on the IGBT to be tested to 3A, and the IGBT is only turned on for 10ms in each 1s cycle, so that repeated current impacts that do not cause obvious internal degradation, and The junction temperature can be approximately equal to the case temperature, start the temperature experiment:

[0055] (1.1) Keep the shell temperature of the IGBT constant at 39°C through a constant temperature device;

[0056] (1.2) Adjust the voltage value of the main power supp...

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Abstract

The invention discloses an online monitoring method for degradation of an insulated gate bipolar transistor (IGBT). The online monitoring method can be used for monitoring the degradation degree of the IGBT in actual operating process, so as to send out early warning before the IGBT fails. The online monitoring method comprises the steps of: under the condition that the IGBT does not degrade, conducting a temperature experiment on an IGBT to be monitored, measuring junction temperature indexes (invariant voltage drop) representing IGBT junction temperature levels at different junction temperatures of the IGBT to be monitored and degradation indexes (conductive resistance) representing IGBT degradation degrees, and calculating a proportionality coefficient of degradation index variable quantity and junction temperature index variable quantity under the same junction temperature variation; and under the condition that the IGBT degrades, measuring a junction temperature index and a degradation index online, carrying out optimization of removing junction temperature influence on the degradation index by combining with the proportionality coefficient obtained through the temperature experiment under the normal condition, and monitoring the degradation degree of the IGBT to be monitored according to the optimized degradation index.

Description

technical field [0001] The invention belongs to the technical field of reliability engineering and relates to an on-line monitoring method for degradation of an insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is composed of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and Bipolar Junction Transistor (Bipolar Junction Transistor, BJT for short) is a full-controlled voltage-controlled power switching device, which has the advantages of voltage control, high input impedance, fast switching speed, small on-resistance, and large current capacity, so it is widely used in power transformers such as inverters. In the converter, it is the main body to realize the power conversion. [0003] In practical applications, the IGBT is in a repeated on-off state, so the junction temperature of the IGBT also rises and falls alternately. This operation process is called the power cycle process of the IGBT. Due to the dif...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/26G01R31/2608
Inventor 徐正国刘丹谢尉扬陈积明胡伯勇张震伟刘林孙优贤
Owner ZHEJIANG UNIV
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