Dynamic testing platform of IGBT with high voltage and large current and testing method thereof

A dynamic test and high current technology, applied in the direction of bipolar transistor test, single semiconductor device test, etc., can solve the problem of long time consumption and achieve the effect of system discharge

Inactive Publication Date: 2017-06-13
JIANGSU CAS JUNSHINE TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the shortcomings in the prior art that it takes too long to test 8 dynamic parameters in the IGBT dynamic test process, and there is no fault protection s

Method used

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  • Dynamic testing platform of IGBT with high voltage and large current and testing method thereof
  • Dynamic testing platform of IGBT with high voltage and large current and testing method thereof
  • Dynamic testing platform of IGBT with high voltage and large current and testing method thereof

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Embodiment Construction

[0038] The present invention will be further described below in conjunction with specific drawings.

[0039] Such as figure 1 , figure 2 As shown, the dynamic test platform of the high-voltage high-current IGBT of the present invention includes a host computer 1, a DSP control system 2, a power module 3, an oscilloscope 4, an A / D sampling circuit 5, a fault protection circuit 6, an emulator 7, and a crystal oscillator 8 And peripheral auxiliary circuit 9.

[0040] Described host computer 1 imports control program in DSP control system 2 by emulator 7, and host computer 1 carries out the processing of test condition setting and test data by Labview, preserves and realizes fault protection etc. based on DSP control system 2; The main function of system 2 is to realize double pulse transmission, bus voltage and I c Sampling of current, etc., as well as protection of software and hardware and discharge of the control system in the event of a control system failure. The host c...

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Abstract

The invention relates to a dynamic testing platform of IGBT with high voltage and large current and testing method thereof, belonging to the field of technology of power electronic semiconductor devices. The testing platform mainly achieves the communication between upper and lower computers based on Labview and DSP, the main functions of which are: (1) test conditions are sent to a DSP controller by a Labview of an upper computer through a programmable controlled voltage source controlled by communication lines and an oscilloscope; (2) the adjustable output voltage of programmable controlled voltage source, the settable oscilloscope and the Labview which can automatically reads oscilloscope waves are achieved; (3) the protection from hardware and software failures like undervoltage, overvoltage and overcurrent is achieved in the whole control system based on DSP, the power is cut and the discharge circuit is enabled once the failures happen in the system for ensuring the normal system tests and the strict security of testing equipments and testers; (4) the oscilloscope data and the 8 dynamic testing parameters are displayed by the Labview of the upper computer and saved as Excel forms for further analysis and summary.

Description

technical field [0001] The invention relates to a dynamic test platform and a test method for a high-voltage and high-current IGBT, in particular to a test system capable of covering a full range of IGBT levels, and belongs to the technical field of power semiconductor devices. Background technique [0002] Power electronic technology is based on power electronic devices, which determine the application level of power electronic equipment. High-power power electronic converter technologies in power systems such as flexible direct current transmission and photovoltaic grid-connected power systems are becoming more and more popular, but However, it is limited by the development of power electronic devices. The insulated gate bipolar transistor IGBT belongs to the technical field of power semiconductor devices, and is mainly used in power conversion and power control. Its development history has gone through stages such as diodes, thyristors, triodes, and IGBTs. [0003] In th...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2608
Inventor 程炜涛武亚恒董志意
Owner JIANGSU CAS JUNSHINE TECH
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