The invention discloses a double-
pulse test circuit and method suitable for a high-
voltage SiC
MOSFET (
Metal-
Oxide-
Semiconductor Field Effect Transistor), and belongs to the technical field of
semiconductor device testing. The circuit comprises an FPGA (
Field Programmable Gate Array) controller, a driving main
chip, a desaturation
short circuit detection circuit, a bidirectional
voltage-stabilizing protection circuit, a SiC
MOSFET upper tube test loop and a SiC
MOSFET lower tube; the output end of the FPGA controller is connected with the input end of the SiC MOSFET upper tube test loop and the input end of the driving board, and the input end of the FPGA controller is connected with the output end of the driving main
chip. The input end of the desaturation
short circuit detection circuit is electrically connected with the drain
electrode and the source
electrode of the SiC MOSFET lower tube, and the input end of the desaturation
short circuit detection circuit is electrically connected with the driving main
chip. One end of the bidirectional
voltage stabilization protection circuit is connected with the output end of the driving main chip, and the other end of the bidirectional voltage stabilization protection circuit is connected with the grid
electrode of the SiC MOSFET lower tube. The high-voltage SIC MOSFET test circuit can solve the problem that the high-voltage SIC MOSFET test circuit is low in safety.