Semiconductor device

Abstract

Provided is a semiconductor device capable of suppressing latch-up generation and formed within a small area. In a minority carrier capture region, a P-type diffusion region (22), an N-type well (24), and a P-type diffusion region (25) are formed on a surface of a P-type semiconductor substrate (27). An N-type diffusion region (23) is formed on a surface of the N-type well (24). And the N-type well (24) is located between the P-type diffusion region (22) and the P-type diffusion region (25). The P-type diffusion region (22) and the P-type diffusion region (25) are each connected to a ground pad (12) not by the shortest distance but respectively through metal film wirings arranged in a diverted way.

Description

technical field [0001] The present invention relates to semiconductor devices. More specifically, it relates to a semiconductor device capable of suppressing the occurrence of latch-up. Background technique [0002] First, a conventional semiconductor device will be described. Figure 5 It is a sectional view showing a conventional semiconductor device. [0003] When a surge with a negative voltage is applied to the input pad 71, electrons as minority carriers in the P-type semiconductor substrate 87 sometimes leak from the N-type diffusion region 81 in the ESD protection circuit region to the P-type semiconductor substrate 87 . The minority carriers flow from the semiconductor substrate 87 into the P-type diffusion region 82 connected to the ground pad 72 to be absorbed. Here, the length of the P-type diffusion region 82 in the horizontal direction in the direction from the ESD protection circuit toward the internal circuit is long enough so that minority carriers are su...

AI Technical Summary

Problems solved by technology

[0005] However, in the technology disclosed in Patent Document 1, the P-type diffusion region 82 in the direction from the ESD protection circuit toward the internal circuit is long in the horizontal direction, and accordingly, the area of ​​the semiconductor device increases.

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