Preparation method of insulated gate bipolar transistor

Abstract

The invention discloses a preparation method of an insulated gate bipolar transistor. The method comprises the following steps: forming a p-type semiconductor substrate; growing a buried oxide layer on the p-type substrate and forming an n-type epitaxial layer on the buried oxide layer; injecting p-type impurity ions into one side of the n-type epitaxial layer and forming a p- / p+ base region with a predetermined depth; injecting the p-type impurity ions into the other side of the n-type epitaxial layer and forming a p+ ring with the predetermined depth; injecting n-type impurity ions into the p- / p+ base region and forming an n+ region with the predetermined depth; forming a first gate and a cathode on the p- / p+ base region and forming an anode on the p+ ring and forming a second gate between the cathode and the anode. The preparation method of the insulated gate bipolar transistor disclosed by the invention aims at providing the preparation method of the insulated gate bipolar transistor, which has high latch resistance and can quickly finish switching.

Description

technical field [0001] The invention relates to the technical field of processing technology of semiconductor components, in particular to a preparation method of an insulated gate bipolar transistor. Background technique [0002] Insulated gate bipolar transistor (InsulatedGateBipolarTransistor: IGBT) is a very suitable device for smart (smart) power supply IC due to its small forward voltage drop and large input impedance; ) (A), a parasitic thyristor composed of n-type epitaxial layer (or drift layer), p base region and n+ cathode (K). When the IGBT works normally, the parasitic thyristor does not work, but when the current exceeds a certain value, the parasitic thyristor turns on, which is the latch characteristic. When the latch-up effect occurs, the IGBT will lose the control capability of the MOS gate, and at the same time, the latch-up effect will limit the current control capability of the IGBT and determine the safe working area; [0003] In order to make the hol...

AI Technical Summary

Problems solved by technology

However, the existing IGBT has disadvantages such as difficult threshold voltage control and complicated process.

In addition, although the existing IGBT has the advantages of low on-resistance, high input impedance and simple driving circuit, it also has disadvantages such as relatively slow switching speed.

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